scholarly journals Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5345
Author(s):  
Ling Dong ◽  
Yang Li ◽  
Jingwen Lv ◽  
Hongchuan Jiang ◽  
Wanli Zhang
Keyword(s):  
Thin Film ◽  
Temperature Measurement ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Lattice Parameter ◽  
Diffraction Peak ◽  
High Temperature Component ◽  
Aln Film ◽  
Temperature Component ◽  
Interpretation Algorithm

A weak C-axis preferred AlN thin film with a lot of defects was fabricated for temperature measurement. It was found that the (002) diffraction peak of the thin film increased monotonously with the increase in annealing temperature and annealing time. This phenomenon is ascribed to the evolution of defects in the lattice of the AlN film. Therefore, the relationship between defects and annealing can be expressed by the offset of (002) diffraction peak, which can be used for temperature measurement. Furthermore, a temperature interpretation algorithm Equation based on the lattice parameter (2θ), annealing temperature and annealing time was established, and a temperature interpretation software was built with MATLAB. Visual temperature interpretation is realized by the software, and the relative error is less than 7%. This study is of great significance for promoting the accurate temperature measurement on the surface of high temperature component.

Annealing Time Influence on Optical Characteristic of Beta-FeSi2 Thin Film

2015 ◽  
Vol 1096 ◽  
pp. 62-68
Author(s):  
Xi Cheng Xiong ◽  
Shuang Shuang Kang ◽  
Qian Chen ◽  
Jin Huang ◽  
Quan Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Annealing Time ◽  
Optical Characteristic ◽  
Annealing Temperature ◽  
Si Substrate ◽  
Direct Current Magnetron Sputtering ◽  
Digital Microscope

In this paper, we have prepared the beta-FeSi2 thin film on Si substrate through the direct current magnetron sputtering technology. We have tested the samples by XRD, optical digital microscope (ODM), spectrophotometer, and SEM. Under the same annealing temperature at 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi2 thin film. More the thickness of the beta-FeSi2 thin film is thinner, and more the absorptivity of photo is higher. We should use the thinner beta-FeSi2 thin film with appropriate value of the thickness and must adopt the anti-reflection layer to fabricate the solar cell.

scholarly journals Impact of Annealing Time on the Formation of Nanocrystal in Amorphous FE75.5SI13.5CU1NB1B9 Alloy and their Ultra-Soft Magnetic Properties

2016 ◽  
Vol 40 (2) ◽  
pp. 137-145
Author(s):  
Samir Kumar Saha ◽  
Kazi Hanium Maria ◽  
Enayet Hossain ◽  
Mahabub Alam Bhuiyan ◽  
DK Saha ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Lattice Parameter ◽  
Soft Magnetic Properties ◽  
Content Increase ◽  
Soft Magnetic ◽  
Nanocrystalline State ◽  
Si Content ◽  
The Impact

To observe the impact of the annealing time on the alloy structure and ultra-soft magnetic properties of Fe75.5Si13.5Cu1Nb1B9, the alloy was annealed in a controlled way in the temperature range 475 - 600°C for different annealing time from 5 to 30 min. Amorphosity of the ribbon and nanocrystalline state was evaluated by X-ray diffraction. Grain size and Si content increase with increasing annealing temperature and time; on the other hand lattice parameter decrease with increasing annealing temperature and time. The maximum permeability was observed at annealing temperature Ta = 525°C for 15 min, and thereafter it starts to decreases. Saturation magnetization increases with annealing temperature Ta for the samples and finally decreases during annealing at a temperature much higher than peak crystallization temperature. The results of the experimental observations are explained on the basis of existing theories of nanocrystalline amorphous metallic ribbons.Journal of Bangladesh Academy of Sciences, Vol. 40, No. 2, 137-145, 2016

scholarly journals Structural Properties and Crystallization Behavior of FINEMET Fe74Cu1.5Nb2.5Si12B10 Alloy Under Different Annealing Condition

2016 ◽  
Vol 64 (1) ◽  
pp. 71-75 ◽  
Author(s):  
Enayet Hossain ◽  
Shamima Choudhury ◽  
DK Saha ◽  
MA Hakim
Keyword(s):  
Grain Size ◽  
Structural Properties ◽  
Annealing Time ◽  
Crystallization Temperature ◽  
Crystallization Behavior ◽  
Annealing Temperature ◽  
Primary Crystallization ◽  
Lattice Parameter ◽  
Annealing Condition ◽  
Si Content

The effect of annealing condition on nanocrystalline amorphous FINEMET type of alloy with nominal composition Fe74Cu1.5Nb2.5Si12B10 prepared by rapid solidification method has been studied to observe the structural properties and crystallization behavior of the material. Nanocrystalline alloy with ferromagnetic bcc nanocrystals with size 15-29 nm embedded in a residual amorphous matrix was produced from amorphous precursor by appropriate annealing condition. The amorphosity of the material, primary crystallization temperature, the nanometric grain size, Si content and the lattice parameter of Fe(Si) nano-phase have been determined from XRD patterns of the samples annealed at different temperatures ranging from 475°C - 650°C with annealing time 5, 12, 20 and 30 minutes. The annealing temperature 475°C (with annealing time of 12 minutes) was determined as primary crystallization temperature with grain size 15 nm, Si content 16.25 at.% and lattice parameter 2.8431 Å. The grains were found to grow rapidly after 550°C attaining a maximum value of 29 nm at the annealing temperature of 650°C. The grain size and Si content increase whereas the lattice parameter decreases with the increase of annealing temperature and time.Dhaka Univ. J. Sci. 64(1): 71-75, 2016 (January)

The Morphology in Film of Polystyrene-b-Polylactide after Temperature Annealing Process

2015 ◽  
Vol 1095 ◽  
pp. 647-650
Author(s):  
Ting Chen ◽  
Jia Nan Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Separation ◽  
Block Copolymer ◽  
Annealing Time ◽  
Self Assembly ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Temperature Gradients ◽  
Si Substrates

Polystyrene-b-Polylactide (PS-b-PLA) was dissolved in chlorobenzene, and the development of the micro-phase separation morphology in asymmetric PS-b-PLA thin films was investigated by AFM. The thin films were prepared by spinning casting at the speed of 6000 r/min for 60s on Si substrates. We get different morphologies of PS-b-PLA thin film by changing the annealing temperature from 150 °C to 170 °C. In addition, the annealing time influences the morphology of the film. When the annealing time increased from 2 hours to 15 hours and 30 hours, the morphology transformed from parallel to perpendicular to the substrate. By applying temperature gradients, we can control the morphology and orientation of the Block copolymer film self-assembly.

scholarly journals Study the Structural Properties and Surface Morphology of CdO Thin Films Prepared by Chemical Spray pyrolysis

2020 ◽  
Vol 12 (02) ◽  
pp. 1-11
Author(s):  
Karrar Mahdi Saleh ◽  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Structural Properties ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Crystal Defects ◽  
Average Grain Size ◽  
Chemical Spray ◽  
Cdo Thin Films

CdO films were prepared using a chemical spray paralysis (CSP) method on the glass substrate at a temperature of 350 ° C and thickness (260 ± 15 nm), and study the effect annealing time (0, 1, 1.5, 2, 2.5) h at annealing temperature 450 °C on structural properties. The X-ray diffraction pattern the results showed that all CdO thin films have a polycrystalline structure and a prevalent growth in the direction (111), and the average grain size (G) in this direction ranges (29.80 - 33.23) nm. It generally increases in value while the agitation values, extraction density, number of crystals decrease by increasing the annealing time (0-2)h at annealing temperature 450 ° C of thin films. From the resulted of the atomic force microscope (AFM), the surface roughness, medium square root (RMS) and average grain size increase with the increasing of the annealing time (0-2) h, at annealing temperature 450 ° C. The thin film with annealing time 2.5 h at annealing temperature 450 °C . We note a slight decrease in the values of the coefficients ( XRD and AFM) Due to the changes in the crystal structure of thin films and beginning of cracks and crystal defects generated on the surface of the thin film during the annealing process. It has been observed in practice that the increase in the annealing time to 3 h at annealing temperature 450 ° C. led to the separation of the thin film from the substrates.

Microstructural Rearrangement in PZT(52/48) Thin Film Prepared By Reactive Cosputtering on Pt on Si(100)

1992 ◽  
Vol 280 ◽  
Author(s):  
Woong Kil Choo ◽  
Kwang Young Kim ◽  
Hyo Jin Kim ◽  
Sung Tae Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Experimental Conditions ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Cubic Structure

ABSTRACTThe experimental conditions which render the exact stoichiometry of PZT(52/48) thin films deposited on Pt thin film on Si(100) by reactive cosputtering have been investigated. As-deposited PZT is amorphous containing α-PbO2 microcrystallites. As annealing temperature increases, the amorphous PZT films crystallize into pyrochlore and perovskite with pseudo-cubic structure in sequence. The perovskite PZT annealed above 750 °C evolves into a phase of morphotropic phase boundary. In the perovskite PZT thin films, the leakage current increases with annealing time. Also, the dielectric constant increases with film thickness and annealing temperature, which is discussed in conjunction with PZT/Pt interfacial morphology.

Pengaruh Pendopingan Karbon Terhadap Struktur Kristal dan Morfologi TIO2

2019 ◽  
Vol 2 (2) ◽  
Author(s):  
Frastica Deswardani ◽  
Helga Dwi Fahyuan ◽  
Rimawanto Gultom ◽  
Eif Sparzinanda
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Grain Size ◽  
Tio2 Thin Film ◽  
Crystal Size ◽  
Diffraction Peak ◽  
Carbon Doping ◽  
Tio2 Anatase ◽  
Spray Method ◽  
Carbon Analysis

Telah dilakukan penelitian mengenai pengaruh konsentrasi doping karbon pada lapisan tipis TiO2 yang ditumbuhkan dengan metode spray terhadap struktur kristal dan morfologi TiO2. Hasil karakterisasi SEM menunjukkan bahwa penambahan doping karbon dapat meningkatkan ukuran butir. Lapisan TiO2 doping karbon 8% diperoleh ukuran butir terbesar adalah 1.35 μm, sedangkan ukuran tekecilnya adalah 0.45 μm. Sementara itu, untuk lapisan tipis TiO2 didoping karbon 15% memiliki ukuran butir terbesar yaitu 1.76 μm dan terkecil 0.9 μm. Hasil XRD menunjukkan seluruh puncak difraksi lapisan tipis TiO2 dengan doping karbon 8% dan 15% merupakan TiO2 anatase. Ukuran kristal lapisan TiO2 didoping karbon 8% diperoleh sebesar 638,08 Å dan untuk pendopingan 15% karbon ukuran kristal lapisan tipis TiO2 adalah 638,09 Å, hal ini menunjukkan ukuran kristal kedua sampel tidak mengalami perubahan yang signifikan.   TiO2 thin film with carbon doping has been successfully grown by spray method. The research on the effect of carbon doping on crystal structure and morfology of TiO2 has been prepared by varying carbon concentration (8% and 15% carbon). Analysis of SEM showed that the addition of carbon may increase the grain size. Thin film of TiO2 doped carbon 8% has the largest grain size 1.35 μm, while the smallest grain size is 0.45 μm. Meanwhile, for thin film TiO2 doped carbon 15% has the largest grain size 1.76 μm and smallest 0.9 μm. The XRD results showed the entire diffraction peak of thin film TiO2 doped carbon 8% and 15% were TiO2 anatase. The crystal size of thin film TiO2 doped carbon 8% was obtained at 638.08 Å and for thin film TiO2 doped carbon 15% the crystalline size of TiO2 thin film was 638.09 Å, this shows that the crystal size of both samples did not change significantly.    

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Problems Associated with Kα Doublet in Residual Stress Measurements

1979 ◽  
Vol 23 ◽  
pp. 333-339
Author(s):  
S. K. Gupta ◽  
B. D. Cullity
Keyword(s):  
Residual Stress ◽  
Silicon Powder ◽  
Lattice Parameter ◽  
Diffraction Peak ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
The Difference ◽  
Similar Accuracy

Since the measurement of residual stress by X-ray diffraction techniques is dependent on the difference in angle of a diffraction peak maximum when the sample is examined consecutively with its surface at two different angles to the diffracting planes, it is important that these diffraction angles be obtained precisely, preferably with an accuracy of ± 0.01 deg. 2θ. Similar accuracy is desired in precise lattice parameter determination. In such measurements, it is imperative that the diffractometer be well-aligned. It is in the context of diffractometer alignment with the aid of a silicon powder standard free of residual stress that the diffraction peak analysis techniques described here have been developed, preparatory to residual stress determinations.

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