scholarly journals A Versatile Design of Low Power and High-Speed Operational Amplifier using Nano Scale Transistors

2020 ◽  
Vol 9 (5) ◽  
pp. 1540-1544
Keyword(s):  
Low Power ◽  
Power Supply ◽  
Power Dissipation ◽  
Operational Amplifier ◽  
High Speed ◽  
Channel Length ◽  
Phase Margin ◽  
Unity Gain ◽  
Two Stages ◽  
Output Swing

This paper illustrates the design of low power and high-speed operational Amplifier using Nanoscale Transistors. The proposed design introduces biasing block, for generating I=10uA for Channel length=180nm Technology. Adding biasing block to two-stages operational Amplifier current is constant i.e. there are no fluctuations in power supply, increase in bandwidth and power dissipation is less as compared the previous result. The design is simulated in p-spice tool and performed AC analysis. After analysis, the design achieved the parameter like Gain = 40db, Phase Margin=90º, Unity Gain Band Width=13MHz, Output Swing=0.1v to 1.7v and Power Dissipation=0.145mW.

Design of High Gain CMOS Folded Cascode Operational Amplifier

2013 ◽  
Vol 389 ◽  
pp. 573-578
Author(s):  
Ming Xin Song ◽  
Yue Li ◽  
Meng Meng Xu
Keyword(s):  
Power Supply ◽  
Operational Amplifier ◽  
High Gain ◽  
Cmos Process ◽  
Phase Margin ◽  
Gain Bandwidth ◽  
Input Stage ◽  
Dc Gain ◽  
Unity Gain ◽  
Folded Cascode

A high-gain folded cascode operational amplifier is presented. Structure of folded cascode operational amplifier and manual calculations are discussed in detail. Folded cascode structure for the input stage is adopted. Folded cascode structure can increase the gain and the value of PSRR. Folded cascode structure can also allow self-compensation at the output. The operational amplifier is designed in 0.35μm CMOS process with 5V power supply. The operational amplifier has high-gain and work steadily. The results of SPICE simulations are shown that the operational amplifier achieved dc gain of 110dB with unity-gain bandwidth of 74.3MHz and phase margin of 54.4 degree.

Performance Analysis of Various Multipliers Using 8T-full Adder with 180nm Technology

2020 ◽  
Vol 13 (6) ◽  
pp. 864-870
Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Fundamental Operation ◽  
Wallace Tree ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Wallace Tree Multiplier

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.

A LOW-POWER AND HIGH-SPEED D FLIP-FLOP USING A SINGLE LATCH

2002 ◽  
Vol 11 (01) ◽  
pp. 51-55
Author(s):  
ROBERT C. CHANG ◽  
L.-C. HSU ◽  
M.-C. SUN
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
Operating Frequency ◽  
Flip Flop ◽  
Lower Power ◽  
Simulation Results ◽  
Hspice Simulation

A novel low-power and high-speed D flip-flop is presented in this letter. The flip-flop consists of a single low-power latch, which is controlled by a positive narrow pulse. Hence, fewer transistors are used and lower power consumption is achieved. HSPICE simulation results show that power dissipation of the proposed D flip-flop has been reduced up to 76%. The operating frequency of the flip-flop is also greatly increased.

High‐speed low‐power and low‐power supply voltage dynamic comparator

2015 ◽  
Vol 51 (23) ◽  
pp. 1914-1916 ◽  
Author(s):  
Daiguo Xu ◽  
Shiliu Xu ◽  
Guangbing Chen
Keyword(s):  
Low Power ◽  
Power Supply ◽  
High Speed ◽  
Supply Voltage ◽  
Power Supply Voltage ◽  
Dynamic Comparator

scholarly journals Subthreshold Region based Linear Feedback Shift Register

2019 ◽  
Vol 8 (6S2) ◽  
pp. 817-821
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
System Level ◽  
Linear Feedback ◽  
Portable Devices ◽  
Subthreshold Region ◽  
Flip Flop ◽  
Ultra Low Power

Growing demand for portable devices and fast increases in complexity of chip cause power dissipation is an important parameter. Power consumption and dissipation or generations of more heat possess a restriction in the direction of the integration of more transistors. Several methods have been proposed to reduce power dissipation from system level to device level. Subthreshold circuits are widely used in more advanced applications due to ultra low-power consumption. The present work targets on construction of linear feedback shift registers (LFSR) in weak inversion region and their performance observed in terms of parameters like power delay product (PDP). In CMOS circuits subthreshold region of operation allows a low-power for ample utilizations but this advantage get with the penalty of flat speed. For the entrenched and high speed applications, improving the speed of subthreshold designs is essential. To enhance this, operate the devices at maximum current over capacitance. LFSR architectures build with various types of D flip flop and XOR gate circuits are analyzed. Circuit level Simulation is carried out using 130 nm technologies.

scholarly journals Low Power VLSI Design Techniques: A Review

2021 ◽  
Vol 23 (11) ◽  
pp. 172-183
Author(s):  
Ketan J. Raut ◽  
◽  
Abhijit V. Chitre ◽  
Minal S. Deshmukh ◽  
Kiran Magar ◽  
...  
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
Vlsi Design ◽  
Cmos Technology ◽  
Vlsi Circuits ◽  
Optimization Techniques ◽  
Battery Life ◽  
Dynamic Power ◽  
Cmos Vlsi

Since CMOS technology consumes less power it is a key technology for VLSI circuit design. With technologies reaching the scale of 10 nm, static and dynamic power dissipation in CMOS VLSI circuits are major issues. Dynamic power dissipation is increased due to requirement of high speed and static power dissipation is at much higher side now a days even compared to dynamic power dissipation due to very high gate leakage current and subthreshold leakage. Low power consumption is equally important as speed in many applications since it leads to a reduction in the package cost and extended battery life. This paper surveys contemporary optimization techniques that aims low power dissipation in VLSI circuits.

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