scholarly journals Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

2012 ◽  
Vol 3 ◽  
pp. 817-823 ◽  
Author(s):  
Farhad Larki ◽  
Arash Dehzangi ◽  
Alam Abedini ◽  
Ahmad Makarimi Abdullah ◽  
Elias Saion ◽  
...  
Keyword(s):  
Electric Field ◽  
Scanning Probe Microscopy ◽  
Silicon On Insulator ◽  
Scanning Probe ◽  
Flat Band ◽  
Junctionless Transistor ◽  
Probe Microscope ◽  
Wet Chemical ◽  
Lateral Gate ◽  
P Type

A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (1015) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off mechanism, from the flat band to the off state. The study is based on the variation of the carrier density and the electric-field components. The device is a pinch-off transistor, which is normally in the on state and is driven into the off state by the application of a positive gate voltage. We demonstrate that the depletion starts from the bottom corner of the channel facing the gates and expands toward the center and top of the channel. Redistribution of the carriers due to the electric field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current.

SCANNING PROBE MICROSCOPY BASED NANOSCALE PATTERNING AND FABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 1-21 ◽  
Author(s):  
XIAN NING XIE ◽  
HONG JING CHUNG ◽  
ANDREW THYE SHEN WEE
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Nanoscale Patterning ◽  
Atomic Force ◽  
Probe Microscope ◽  
Molecular Manipulation

Nanotechnology is vital to the fabrication of integrated circuits, memory devices, display units, biochips and biosensors. Scanning probe microscope (SPM) has emerged to be a unique tool for materials structuring and patterning with atomic and molecular resolution. SPM includes scanning tunneling microscopy (STM) and atomic force microscopy (AFM). In this chapter, we selectively discuss the atomic and molecular manipulation capabilities of STM nanolithography. As for AFM nanolithography, we focus on those nanopatterning techniques involving water and/or air when operated in ambient. The typical methods, mechanisms and applications of selected SPM nanolithographic techniques in nanoscale structuring and fabrication are reviewed.

scholarly journals Research of the Possibility of Applying Nanomarking on Steel Surfaces with a Scanning Probe Microscope

2020 ◽  
pp. 44-49
Author(s):  
Tatyana Kislova
Keyword(s):  
Spatial Resolution ◽  
Scanning Probe Microscopy ◽  
Metal Layer ◽  
Scanning Probe ◽  
Micro Milling ◽  
Innovative Technology ◽  
Probe Microscope ◽  
Metal Products ◽  
Steel Surfaces ◽  
Counterfeit Products

Recently, an increasing number of products are subject to protective labeling-application of digital and letter designations, barcodes that individualize the product. This has become especially relevant with the release of counterfeit products and mass theft of vehicles. The number usually individualizes a specific instance of the product. In the case of manufacturing cars, weapons, and precious items, this makes it possible to register and strictly account for these items. Marking numbers can be applied directly to the material they are made of, or to attached metal or polymer plates. Marking symbols are applied in various ways. They are applied to steel products by stamping, micro-milling or laser engraving. As expert practice shows, such markings on metal products are either completely removed by milling, cutting or sawing the metal layer with various tools and devices, or changed, or new markings are applied to the place of destroyed marks. The paper studies the possibility of creating protective markings of the nanometer level of spatial resolution on steel products of different hardness using a new innovative technology-scanning probe microscopy, which provides one hundred percent verification of items and objects.

scholarly journals Nanoscale Characterization of Silicon-On-Insulator Nanowires by Multimode Scanning Probe Microscopy

2013 ◽  
Vol 38 (2) ◽  
pp. 265-268
Author(s):  
Leonid Bolotov ◽  
Tetsuya Tada ◽  
Yukinori Morita ◽  
Vladimir Poborchii ◽  
Toshihiko Kanayama
Keyword(s):  
Scanning Probe Microscopy ◽  
Silicon On Insulator ◽  
Scanning Probe ◽  
Probe Microscopy ◽  
Nanoscale Characterization

Characterization of High Resolution Resists and Metal Shims by Scanning Probe Microscopy

2000 ◽  
Vol 6 (2) ◽  
pp. 129-136 ◽  
Author(s):  
B. A. Sexton ◽  
R. J. Marnock
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Scanning Probe Microscopy ◽  
Electron Beam Lithography ◽  
Scanning Probe ◽  
Feedback Process ◽  
Probe Microscope ◽  
Etched Silicon ◽  
Micro Patterns

Technologies such as compact disc (CD) manufacturing, hologram embossing, and security printing rely on the reproduction of micro-patterns generated on surfaces by optical or electron-beam lithographic writing onto electron-beam or photoresists. The periodicity of such patterns varies from sub-micron to several microns, with depths up to 0.5 μm. The scanning probe microscope (SPM) is becoming a routine tool for analysis of these micro-patterns, to check on depths and lateral dimensions of features. Direct scanning of resist-covered plates is now possible, without damage, using resonant low-contact force SPM with etched silicon cantilevers. Metal shims produced from the master resist plates can also be scanned and checked for defects prior to production of embossed foils. The present article discusses examples of the use of a Digital Instruments 3100 microscope in analysis of production electron-beam lithography plates with a 0.5 μm resist thickness. We also examine features of nickel replicas (father and mother shims) produced by electroforming from the original plate. With SPM measurements of the development profile of a particular plate, corrections can be made to exposures and development times during production to correct errors. An example is given of such a feedback process.

Polarization Reversal Anti-parallel to the Applied Electric Field Observed Using a Scanning Nonlinear Dielectric Microscopy

2003 ◽  
Vol 784 ◽  
Author(s):  
Takeshi Morita ◽  
Yasuo Cho
Keyword(s):  
Electric Field ◽  
Nonvolatile Memory ◽  
Intrinsic Property ◽  
Measuring Method ◽  
Ferroelectric Material ◽  
Scanning Probe ◽  
Nonlinear Dielectric ◽  
Poling Direction ◽  
Nonvolatile Memory Devices ◽  
Probe Microscope

ABSTRACTIt is well known that spontaneous polarization of ferroelectric material is an intrinsic property applied for nonvolatile memory devices. Poling direction can be reversed in a nanometer size area using the conductive cantilever of a scanning probe microscope. In order to detect nanodots patterns, scanning nonlinear dielectric microscope (SNDM) is superior to piezore-sponse microscope in terms of resolution. In this paper, a real-time measuring method of a poling direction is proposed. Using this method, the domain reversal process was observed and an unexpected phenomenon was found, namely, that the poling directions were aligned antiparallel to the poling electric field. This antiparallel poling reversal took place when the film thickness was more than 350 nm in the case of lithium tantalate. At present, the reason and mechanism of the antiparallel poling reversal are uncertain, although it might be related to the concentrated electric field near the cantilever tip.

scholarly journals Морфология, структурные и оптические свойства наноструктур кремния, полученные в растворе, содержащем гексафторосиликат водорода H-=SUB=-2-=/SUB=-(SiF-=SUB=-6-=/SUB=-)

2020 ◽  
Vol 128 (9) ◽  
pp. 1375
Author(s):  
Ш.А. Жуматова ◽  
С.М. Манаков ◽  
Е. Сагидолда ◽  
М.Б. Дарменкулова ◽  
Р.М. Азамат ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Ethyl Alcohol ◽  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Scanning Probe ◽  
Silicon Nanostructures ◽  
Structural And Optical Properties ◽  
Boron Doped ◽  
P Type

Boron doped porous silicon with the observed photoluminescence with a crystallographic orientation of (100), which was fabricated based on a p-type silicon substrate using electrochemical etching in a solution containing hexafluorosilicic acid and ethyl alcohol was studied. A comparative analysis of the morphology, structural and optical properties of silicon nanostructures obtained in a solution containing H2(SiF6) and ethanol and samples obtained in a solution containing HF and ethanol was performed. Morphology, structural and optical properties were studied using scanning probe microscopy and spectrophotometry. It was shown that samples of porous silicon obtained in a solution containing H2(SiF6) and ethanol are characterized by improved optical properties, in particular, they exhibit more intense photoluminescence compared to samples obtained in solutions with HF and ethyl alcohol.

scholarly journals Сегнетоэлектрические свойства гетероструктуры Sr-=SUB=-0.5-=/SUB=-Ba-=SUB=-0.5-=/SUB=-Nb-=SUB=-2-=/SUB=-O-=SUB=-6-=/SUB=-/Ba-=SUB=-0.2-=/SUB=-Sr-=SUB=-0.8-=/SUB=-TiO-=SUB=-3-=/SUB=-/Si(001)

2022 ◽  
Vol 48 (5) ◽  
pp. 15
Author(s):  
Д.А. Киселев ◽  
А.В. Павленко ◽  
С.П. Зинченко
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Scanning Probe Microscopy ◽  
Field Effect ◽  
Average Crystallite Size ◽  
Scanning Probe ◽  
Si Substrate ◽  
Initial State ◽  
P Type ◽  
Potential Signal

The properties of c-oriented thin films Sr0.5Ba0.5Nb2O6 grown on a Si(001) (p-type) substrate with a pre-deposited Ba0.2Sr0.8TiO3 layer were studied using scanning probe microscopy and dielectric spectroscopy. It is established that the films Sr0.5Ba0.5Nb2O6 are characterized by low surface roughness (less than 6 nm), average crystallite size 93 nm. It is shown that there is spontaneous polarization in the film directed from its surface to the substrate, which caused the manifestation of the field effect for the case of the Si substrate with p-type conductivity without external field effect. Differences in the magnitude of the surface potential signal for regions polarized by an external electric field of different polarities (+10 and −10 V), as well as in their relaxation to the initial state, are revealed. The reasons for the established patterns are discussed.

scholarly journals Study of the UTBB BESOI Tunnel-FET working as a Dual-Technology Transistor

2021 ◽  
Vol 16 (2) ◽  
pp. 1-6
Author(s):  
Carlos Augusto Bergfeld Mori ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino
Keyword(s):  
Electric Field ◽  
Device Simulation ◽  
Silicon On Insulator ◽  
Gate Bias ◽  
Proof Of Concept ◽  
Back Gate ◽  
Tunnel Fet ◽  
Working Principle ◽  
P Type

In this work, we further investigate the operation of the BESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the struc-ture, but also as an nMOS when a positive back bias is ap-plied. The working principle is based on the generation of a channel of either holes or electrons by the back gate electric field, which can then be depleted through the front gate bias. TCAD device simulation was used for the proof of concept.

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