Polarization Reversal Anti-parallel to the Applied Electric Field Observed Using a Scanning Nonlinear Dielectric Microscopy

2003 ◽  
Vol 784 ◽  
Author(s):  
Takeshi Morita ◽  
Yasuo Cho
Keyword(s):  
Electric Field ◽  
Nonvolatile Memory ◽  
Intrinsic Property ◽  
Measuring Method ◽  
Ferroelectric Material ◽  
Scanning Probe ◽  
Nonlinear Dielectric ◽  
Poling Direction ◽  
Nonvolatile Memory Devices ◽  
Probe Microscope

ABSTRACTIt is well known that spontaneous polarization of ferroelectric material is an intrinsic property applied for nonvolatile memory devices. Poling direction can be reversed in a nanometer size area using the conductive cantilever of a scanning probe microscope. In order to detect nanodots patterns, scanning nonlinear dielectric microscope (SNDM) is superior to piezore-sponse microscope in terms of resolution. In this paper, a real-time measuring method of a poling direction is proposed. Using this method, the domain reversal process was observed and an unexpected phenomenon was found, namely, that the poling directions were aligned antiparallel to the poling electric field. This antiparallel poling reversal took place when the film thickness was more than 350 nm in the case of lithium tantalate. At present, the reason and mechanism of the antiparallel poling reversal are uncertain, although it might be related to the concentrated electric field near the cantilever tip.

Analysis of Ferroelectric Microcapacitors by Scanning Probe Microscope

2004 ◽  
Vol 811 ◽  
Author(s):  
Nobuhiro Kin ◽  
Koichiro Honda
Keyword(s):  
High Temperatures ◽  
Low Temperatures ◽  
Evaluation System ◽  
Ferroelectric Material ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
Electrical Heater ◽  
Device Processing ◽  
Probe Microscope ◽  
The Impact

ABSTRACTTo develop higher density FRAM requires reducing cell size. Therefore, the size effects resulting from device processing and the material's physical properties must be measured. Therefore, analyzing the electric characteristics of a single bit cell capacitor has become important. Two known characteristics of ferroelectric material are that the Vc increases at low temperatures, and the Pr falls at high temperatures. To further evaluate the impact of temperature on ferroelectrics, we constructed a new evaluation system based on a scanning probe microscope, that can measure the electric characteristics of a single bit cell capacitor. This system can be used in the temperature range from −120 degrees to 300 degrees C. We accomplished this by circulating liquid nitrogen around a SPM stage and by using an electrical heater. We measured the electrical properties of ferroelectric microcapacitors by using a sample with IrOx/PZT/Pt structure. Our measurements revealed that 2Pr really increases at low temperatures, and Pr decreases at high temperatures. That is, we have shown that Vc increases 30% at low temperatures and Pr decreases 10% also in an actual FRAM single bit cell capacitor.

scholarly journals Pinch-off mechanism in double-lateral-gate junctionless transistors fabricated by scanning probe microscope based lithography

2012 ◽  
Vol 3 ◽  
pp. 817-823 ◽  
Author(s):  
Farhad Larki ◽  
Arash Dehzangi ◽  
Alam Abedini ◽  
Ahmad Makarimi Abdullah ◽  
Elias Saion ◽  
...  
Keyword(s):  
Electric Field ◽  
Scanning Probe Microscopy ◽  
Silicon On Insulator ◽  
Scanning Probe ◽  
Flat Band ◽  
Junctionless Transistor ◽  
Probe Microscope ◽  
Wet Chemical ◽  
Lateral Gate ◽  
P Type

A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (1015) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off mechanism, from the flat band to the off state. The study is based on the variation of the carrier density and the electric-field components. The device is a pinch-off transistor, which is normally in the on state and is driven into the off state by the application of a positive gate voltage. We demonstrate that the depletion starts from the bottom corner of the channel facing the gates and expands toward the center and top of the channel. Redistribution of the carriers due to the electric field emanating from the gates creates an electric field perpendicular to the current, toward the bottom of the channel, which provides the electrostatic squeezing of the current.

Scanning-probe microscope analysis of optical thin films: A new analytical tool in a manufacturing environment

1994 ◽  
Vol 52 ◽  
pp. 1068-1069
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Control ◽  
Scanning Probe Microscope ◽  
Scanning Probe ◽  
List Type ◽  
Manufacturing Environment ◽  
Physical Measurements ◽  
Probe Microscope

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Photoelectric Effect ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrical Characteristics ◽  
Atomic Force ◽  
Probe Microscope ◽  
Probe Head

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.

Быстродействующая атомно-силовая и сканирующая капиллярная микроскопия в решении задач материаловедения, биологии и медицины

2020 ◽  
Vol 13 (3-4) ◽  
pp. 222-228
Author(s):  
И.В. Яминский ◽  
А.И. Ахметова
Keyword(s):  
Antibiotic Resistance ◽  
Early Detection ◽  
Biomedical Research ◽  
Drug Screening ◽  
Targeted Delivery ◽  
High Speed ◽  
Scanning Probe ◽  
Biological Processes ◽  
Atomic Force ◽  
Probe Microscope

Разработка высокоэффективных режимов быстродействующего сканирующего зондового микроскопа, в первую очередь атомно-силовой и сканирующей капиллярной микроскопии, представляет особый интерес для успешного проведения биомедицинских исследований: изучения биологических процессов и морфологии биополимеров, определения антибио­тикорезистентности бактерий, адресной доставки биомакромолекул, скринингу лекарств, раннему обнаружению биологических агентов (вирусов и бактерий) и др. The development of highly efficient modes of a high-speed scanning probe microscope, primarily atomic force and scanning capillary microscopy, is of particular interest for successful biomedical research: studying biological processes and the morphology of biopolymers, determining antibiotic resistance of bacteria, targeted delivery of biomacromolecules, drug screening, early detection agents (viruses and bacteria), etc.

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