Key Issues in Microscale Temperature Sensing with Thermocouple Array

2011 ◽  
Vol 422 ◽  
pp. 29-34 ◽  
Author(s):  
Wei Qiang Sun ◽  
Hai Xiao Liu ◽  
Sheng Yong Xu
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Temperature Measurement ◽  
Potential Application ◽  
Temperature Sensing ◽  
Local Temperature ◽  
Calibration Measurement ◽  
Key Issues ◽  
Material Fabrication ◽  
Critical Regions

Precise local temperature measurement is important for research on failure analysis of integrated circuits, micro/nano-fluidics, chemistry reactions in confined geometry, biological and biochemical reactions, etc. Thermocouple arrays are believed powerful for local temperature sensing at the microscale with high spatial, temporal, and temperature resolutions. And, as a passive device, a thermocouple array can often be embedded in a complicated solid device, providing real-time temperature information of critical regions of the device. In this work, we will discuss in detail some key issues of temperature sensing at the microscale by using thermocouple arrays, in terms of material, fabrication, calibration, measurement, time-resolvable mapping, and potential application.

Failure Analysis With the Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 482-483
Author(s):  
John R. Devaney
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
High Reliability ◽  
Military Applications ◽  
Small Structure ◽  
Useful Life ◽  
Insight Into ◽  
Scanning Electron

Occasionally in history, an event may occur which has a profound influence on a technology. Such an event occurred when the scanning electron microscope became commercially available to industry in the mid 60's. Semiconductors were being increasingly used in high-reliability space and military applications both because of their small volume but, also, because of their inherent reliability. However, they did fail, both early in life and sometimes in middle or old age. Why they failed and how to prevent failure or prolong “useful life” was a worry which resulted in a blossoming of sophisticated failure analysis laboratories across the country. By 1966, the ability to build small structure integrated circuits was forging well ahead of techniques available to dissect and analyze these same failures. The arrival of the scanning electron microscope gave these analysts a new insight into failure mechanisms.

ATE Failure Isolation Methodologies for Failure Analysis, Design Debug and Yield Enhancement

1998 ◽  
Author(s):  
D.S. Patrick ◽  
L.C. Wagner ◽  
P.T. Nguyen
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Yield Enhancement ◽  
Production Test ◽  
Final Test ◽  
Critical Design ◽  
The Past ◽  
Product Engineering ◽  
Time Savings ◽  
Analysis Design

Abstract Failure isolation and debug of CMOS integrated circuits over the past several years has become increasingly difficult to perform on standard failure analysis functional testers. Due to the increase in pin counts, clock speeds, increased complexity and the large number of power supply pins on current ICS, smaller and less equipped testers are often unable to test these newer devices. To reduce the time of analysis and improve the failure isolation capabilities for failing ICS, failure isolation is now performed using the same production testers used in product development, multiprobe and final test. With these production testers, the test hardware, program and pattern sets are already available and ready for use. By using a special interface that docks the production test head to failure isolation equipment such as the emission microscope, liquid crystal station and E-Beam prober, the analyst can quickly and easily isolate the faillure on an IC. This also enables engineers in design, product engineering and the waferfab yield enhancement groups to utilize this equipment to quickly solve critical design and yield issues. Significant cycle time savings have been achieved with the migration to this method of electrical stimulation for failure isolation.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

Combine Micro-Probing and OBIRCH to Catch Non-Recognizable Fault in RF and Mixed-Mode Integrated Circuits

2007 ◽  
Author(s):  
Cha-Ming Shen ◽  
Yen-Long Chang ◽  
Lian-Fon Wen ◽  
Tan-Chen Chuang ◽  
Shi-Chen Lin ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Radio Frequency ◽  
Failure Analysis ◽  
Case Studies ◽  
Mixed Mode ◽  
Failure Mechanisms ◽  
Deep Submicron ◽  
Digital Logic ◽  
Successful Approach ◽  
Cmos Processes

Abstract Highly-integrated radio frequency and mixed-mode devices that are manufactured in deep-submicron or more advanced CMOS processes are becoming more complex to analyze. The increased complexity presents us with many eccentric failure mechanisms that are uniquely different from traditional failure mechanisms found during failure analysis on digital logic applications. This paper presents a novel methodology to overcome the difficulties and discusses two case studies which demonstrate the application of the methodology. Through the case studies, the methodology was proven to be a successful approach. It is also proved how this methodology would work for such non-recognizable failures.

Introduction of Spectral Mapping through Transmission Grating, Derivative Technique of Photon Emission

2014 ◽  
Author(s):  
Thierry Parrassin ◽  
Sylvain Dudit ◽  
Michel Vallet ◽  
Antoine Reverdy ◽  
Hervé Deslandes
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Light Emission ◽  
Photon Emission ◽  
Optical Path ◽  
Spectral Mapping ◽  
Additional Information ◽  
Transmission Grating ◽  
Emission System ◽  
Advance Knowledge

Abstract By adding a transmission grating into the optical path of our photon emission system and after calibration, we have completed several failure analysis case studies. In some cases, additional information on the emission sites is provided, as well as understanding of the behavior of transistors that are associated to the fail site. The main application of the setup is used for finding and differentiating easily related emission spots without advance knowledge in light emission mechanisms in integrated circuits.

Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis

2018 ◽  
Author(s):  
Harold Jeffrey M. Consigo ◽  
Ricardo S. Calanog ◽  
Melissa O. Caseria
Keyword(s):  
Gallium Arsenide ◽  
Sulfuric Acid ◽  
Nitric Acid ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Mixed Acid ◽  
Optimum Parameters ◽  
Plastic Package ◽  
Fuming Nitric Acid ◽  
Concentrated Sulfuric Acid

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.

Novel FIB Use for Failure Analysis of MEMS Gyroscopes

2016 ◽  
Author(s):  
Nathan Wang ◽  
Saunil Shah ◽  
Camille Garcia ◽  
Vicente Pasating ◽  
George Perreault
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
New Techniques ◽  
Unique Challenge ◽  
Root Cause ◽  
Large Size ◽  
Mems Gyroscopes

Abstract MEMS samples, with their relatively large size and weight, present a unique challenge to the failure analyst as they also included thin films and microstructures used in conventional integrated circuits. This paper describes how to accommodate the large MEMS structures without skimping on the microanalyses needed to get to the root cause. Investigations of tuning folk gyroscopes were used to demonstrate these new techniques.

Electrical Invasiveness of Grinding and Polishing Silicon Integrated Circuits Down to 1 μm Remaining Silicon Thickness

2016 ◽  
Author(s):  
Robert Chivas ◽  
Scott Silverman ◽  
Michael DiBattista ◽  
Ulrike Kindereit
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Electron Hole ◽  
Analysis Techniques ◽  
Silicon Integrated Circuits ◽  
Electron Hole Pair ◽  
Pair Generation ◽  
Silicon Thickness ◽  
Performance Timing ◽  
Grinding And Polishing

Abstract Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is expected, possibly altering the performance (timing) of integrated circuits in addition to electron-hole pair generation. In this work, a study of the electrical invasiveness due to grinding and polishing silicon integrated circuits to ultra-thin (< 5 um global, ~ 1 um local) remaining thickness is presented.

Interfacial Delamination in Plastic Encapsulated Integrated Circuits (Pics)

1996 ◽  
Vol 445 ◽  
Author(s):  
Nickolaos Strifas ◽  
Aris Christou
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Stress Corrosion ◽  
Integrated Circuit ◽  
Point Of View ◽  
Acoustic Microscopy ◽  
Electrical Performance ◽  
Premature Failure ◽  
Interfacial Delamination ◽  
Die Surface

AbstractThe reliability of plastic packaged integrated circuits was assessed from the point of view of interfacial mechanical integrity. It is shown that the effect of structural weaknesses caused by poor bonding, voids, microcracks or delamination may not be evident in the electrical performance characteristics, but may cause premature failure. Acoustic microscopy (C-SAM) was selected for nondestructive failure analysis of the plastic integrated circuit (IC) packages. Integrated circuits in plastic dual in line packages were initially subjected to temperature (25 °C to 85 °C) and humidity cycling (50 to 85 %) where each cycle was of one hour duration and for over 100 cycles and then analyzed. Delamination at the interfaces between the different materials within the package, which is a major cause of moisture ingress and subsequent premature package failure, was measured. The principal areas of delamination were found along the leads extending from the chip to the edge of the molded body and along the die surface itself. Images of the 3-D internal structure were produced that were used to determine the mechanism for a package failure. The evidence of corrosion and stress corrosion cracks in the regions of delamination was identified.

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