Mechanical Properties of Al-3%Ti Thin Film for Reliability Analysis of RF MEMS Switch

2006 ◽  
Vol 306-308 ◽  
pp. 1319-1324 ◽  
Author(s):  
Jun Hyub Park ◽  
Yun Jae Kim ◽  
Sung Hoon Choa
Keyword(s):  
Thin Film ◽  
Experimental Method ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Tensile Loading ◽  
Tensile Tests ◽  
Measuring System ◽  
Rf Switch ◽  
Mems Switch ◽  
Loading System

This paper presents a novel experimental method to investigate the strength of material, Al-3%Ti, which is commonly used in RF(radio frequency) microelectromechanical systems(MEMS) switch. The experimental method involves the development of a new tensile loading system. The new tensile loading system has a load cell with maximum capacity of 0.5N and a non-contact position measuring system based on the principle of capacitance micrometry with 0.1nm resolution for displacement measurement. A voice coil of audio speaker is used as the actuator of the loading system. And new specimen was designed and fabricated to easily manipulate, align and grip a thin-film for a tensile and fatigue test. The material used in this study was Al-3%Ti thin film, which was used in RF switch. The thickness and width of the thin film of specimen are 1.1µm and 480µm, respectively. The holes at center of grip end are able to make alignment and gripping easy. The bridges are to remove the side supports easily and extract specimen from wafer without sawing. Tensile tests were performed on 5 specimens. The ultimate strength of Al-3%Ti was 144MPa.

Fatigue Test of Al-3%Ti Using Axial Loading Testing Machine for RF MEMS Switch

2006 ◽  
Vol 110 ◽  
pp. 3-8 ◽  
Author(s):  
Jun Hyub Park ◽  
Chang Seung Lee ◽  
Yun Jae Kim
Keyword(s):  
Thin Film ◽  
Fatigue Strength ◽  
High Cycle Fatigue ◽  
Rf Mems ◽  
Testing Machine ◽  
Axial Loading ◽  
Tensile Tests ◽  
Fatigue Properties ◽  
Cycle Fatigue ◽  
Mems Switch

This paper presents high cycle fatigue properties of a Al-3%Ti thin film, used in a RF (radio-frequency) MEMS switch for a mobile phone. The thickness and width of the thin film of specimen are 1.1μm and 480.0μm, respectively. Tensile tests of five specimens are performed, from which the ultimate strength is found to be 144MPa. High cycle fatigue tests of six specimens are also performed, from which the fatigue strength coefficient and the fatigue strength exponent are found to be 336MPa and –0.1514, respectively.

Analysis and Design of a Robust RF MEMS Switch

2012 ◽  
Author(s):  
Ibrahim Chamseddine ◽  
Hadi Kasab ◽  
Maya Antoun ◽  
Tawfiq Dahdah ◽  
Mohammed Mirhi ◽  
...  
Keyword(s):  
Failure Modes ◽  
Rf Mems ◽  
Dielectric Breakdown ◽  
Rf Switch ◽  
Switching Speed ◽  
Analysis And Design ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Switching Performance ◽  
Contact Adhesion

A MEMS RF switch is expected to undergo 10 billion switching cycles before failure. Until complete physical explanation for these failure modes that include contact adhesion, damping effects, stiction, increases in resistance with time, dielectric breakdown, and electron trapping is fully established, the technology’s numerous advantages cannot be harvested reliably and efficiently. This paper investigates prospective solutions to problems in switch designs by proposing a new design for the switch. We consider the new design from different perspectives: dynamic, electric, fluidic, etc. It is billed to overcome the difficulties and involves the implementation of liquid metal contact electrostatically actuated to ensure the same switching performance, with prolonged life span, and robust switching speed.

Thermal Management in RF MEMS Ohmic Switches

2007 ◽  
Author(s):  
Ryszard J. Pryputniewicz
Keyword(s):  
Thermal Management ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Electrical Contact ◽  
Internal Resistance ◽  
Electrical Signal ◽  
Joule Heat ◽  
Mems Switch ◽  
Heat Effects ◽  
Functional Operation

Today, an ideal microelectromechanical systems (MEMS) switch is no longer a designer’s dream, yet electrothermomechanical (ETM) effects still limit the design possibilities and may adversely affect reliability of microswitches, especially the Ohmic-type cantilever contact switches. The ETM effects are a result of Joule heat generated at the switch contact areas (i.e., electrical interfaces). This heat is due to an electrical signal passing through a microswitch, internal resistance of contact materials, and characteristics of the electrical contact interface. It significantly raises temperature of a microswitch, thus adversely affecting mechanical and electrical properties of the contacts, leading to their wear or even welding, which is a major reliability issue. Fundamental research is being performed to minimize Joule heat effects in the electrical interface area, thus improving the microswitch performance and reliability. Thermal analysis conducted computationally on an Ohmic-type RF MEMS switch indicate heat affected zones (HAZ) and the influence that various parameters have on those zones. Such analysis facilitates mitigation of thermal management issues that may otherwise be detrimental to functional operation of a microswitch.

scholarly journals Thin Film Encapsulation for RF MEMS in 5G and Modern Telecommunication Systems

Sensors ◽  
2020 ◽  
Vol 20 (7) ◽  
pp. 2133 ◽  
Author(s):  
Anna Persano ◽  
Fabio Quaranta ◽  
Antonietta Taurino ◽  
Pietro Aleardo Siciliano ◽  
Jacopo Iannacci
Keyword(s):  
Thin Film ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Sacrificial Layer ◽  
Three Dimensional ◽  
Telecommunication Systems ◽  
Rf Performance ◽  
Three Dimensional Finite Element ◽  
The Impact ◽  
Thin Film Encapsulation

In this work, SiNx/a-Si/SiNx caps on conductive coplanar waveguides (CPWs) are proposed for thin film encapsulation of radio-frequency microelectromechanical systems (RF MEMS), in view of the application of these devices in fifth generation (5G) and modern telecommunication systems. Simplification and cost reduction of the fabrication process were obtained, using two etching processes in the same barrel chamber to create a matrix of holes through the capping layer and to remove the sacrificial layer under the cap. Encapsulating layers with etch holes of different size and density were fabricated to evaluate the removal of the sacrificial layer as a function of the percentage of the cap perforated area. Barrel etching process parameters also varied. Finally, a full three-dimensional finite element method-based simulation model was developed to predict the impact of fabricated thin film encapsulating caps on RF performance of CPWs.

Size Effect on Tensile Strength of Surface-Micromachined Al-3%Ti Thin Films

2006 ◽  
Vol 326-328 ◽  
pp. 313-316 ◽  
Author(s):  
Jun Hyub Park ◽  
Man Sik Myung ◽  
Yun Jae Kim ◽  
Chang Seung Lee ◽  
Sung Hoon Choa ◽  
...  
Keyword(s):  
Thin Films ◽  
Tensile Strength ◽  
Tensile Testing ◽  
Mechanical Characteristics ◽  
Microelectromechanical Systems ◽  
Measuring System ◽  
Mems Switch ◽  
Tensile Tester ◽  
The Mean ◽  
Contact Position

A new tensile tester using an electromagnetic-force actuator (voice coil) was developed to measure the mechanical characteristics of surface-micromachined thin film materials. The tester has a load cell with maximum capacity of 0.5N and a non-contact position measuring system based on the principle of capacitance micrometry with 0.1nm resolution for displacement measurement. The tester was applied for tensile testing of Al-3%Ti thin films with dimensions of 1000μm long, 50-480μm wide and 1.0 and 1.1 μm thick. The Al-3%Ti is commonly used in RF(radio frequency) microelectromechanical systems(MEMS) switch. The specimen with holes and bridges was designed for easy tensile test. The holes at center of grip end are able to make alignment and gripping easy. The bridges are to remove the side supports easily and extract specimen from wafer without sawing. It was found that the mean tensile strengths of Al-3%Ti are 140-380MPa, depending on the width of specimens and converging to a certain tensile strength as the width decreases.

scholarly journals Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1237
Author(s):  
Yong Zhu ◽  
Jitendra Pal
Keyword(s):  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Voltage ◽  
High Reliability ◽  
Actuation Voltage ◽  
Electrostatic Actuation ◽  
Mems Switch ◽  
Thermal Actuation ◽  
Electrothermal Actuation ◽  
Power Handling Capability

In this paper, we report a novel laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch, which is based on a combination of electrothermal actuation and electrostatic latching hold. The switch takes the advantages of both actuation mechanisms: large actuation force, low actuation voltage, and high reliability of the thermal actuation for initial movement; and low power consumption of the electrostatic actuation for holding the switch in position in ON state. The switch with an initial switch gap of 7 µm has an electrothermal actuation voltage of 7 V and an electrostatic holding voltage of 21 V. The switch achieves superior RF performances: the measured insertion loss is −0.73 dB at 6 GHz, whereas the isolation is −46 dB at 6 GHz. In addition, the switch shows high reliability and power handling capability: the switch can operate up to 10 million cycles without failure with 1 W power applied to its signal line.

scholarly journals High-performance inline RF MEMS switch for application in 5G mobile networks

2021 ◽  
Vol 2086 (1) ◽  
pp. 012068
Author(s):  
A V Tkachenko ◽  
I E Lysenko ◽  
A V Kovalev ◽  
D V Vertyanov
Keyword(s):  
Mobile Networks ◽  
High Performance ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Coplanar Waveguide ◽  
Satellite Communications ◽  
Elastic Suspension ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
5G Mobile Networks

Abstract This article presents the results of the design and analysis of a radio-frequency switch made using microelectromechanical systems technology. The device is the capacitive switch with a hybrid type of contact, in which the movable electrode of the structure – the metal membrane is part of the microwave signal line of the coplanar waveguide. The switch design is characterized by a high capacitance ratio and low contact resistance. The zig-zag elastic suspension is used to reduce the value of the pull-down voltage – 2 V and the switching time ∼ 7 us. The central resonant frequency of the switch is 3.8 GHz. In this case, in the open state, the value of the insertion loss is not more than -0.2 dB and the isolation value in the close state is not less than -55 dB. The effective frequency range is the S-band, as well as the C-, X- and Ku-band, in which the isolation value is at least -30 dB. The presented inline RF MEMS switch is suitable for use in various types of ground and satellite communications, in particular for devices and systems of 5G mobile networks.

The low-complexity RF MEMS switch at EADS: an overview

2011 ◽  
Vol 3 (5) ◽  
pp. 499-508 ◽  
Author(s):  
Bernhard Schoenlinner ◽  
Armin Stehle ◽  
Christian Siegel ◽  
William Gautier ◽  
Benedikt Schulte ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Rf Mems ◽  
Low Cost ◽  
Low Complexity ◽  
Phase Shifters ◽  
Experimental Investigations ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

This paper gives an overview of the low-complexity radio frequency microelectromechanical systems (RF MEMS) switch concept and technology of EADS Innovation Works in Germany. Starting in 2003, a capacitive switch concept, which is unique in several aspects, was developed to address specific needs in the aeronautic and space. Thermally grown silicon oxide as dielectric layer, the silicon substrate as actuation electrode, and a conductive zone realized by ion implantation make the EADS RF MEMS switch a very simple, low-cost, and reliable approach. In this document, data on experimental investigations are presented, which demonstrate outstanding performance figures in terms of insertion loss, isolation, frequency range, bandwidth, RF-power handling, and robustness with respect to thermal load. Based on this concept, numerous different circuits in particular single-pole single-throws (SPSTs), single-pole multi-throws (SPMTs), tunable filters, phase shifters, and electronically steerable antennas between 6 and 100 GHz have been designed, fabricated, and characterized.

Measurement of Continuous Micro-Tensile Strain Using Micro-ESPI Technique

2005 ◽  
Vol 297-300 ◽  
pp. 53-58 ◽  
Author(s):  
Yong Hak Huh ◽  
Dong Iel Kim ◽  
Chang Doo Kee
Keyword(s):  
Thin Film ◽  
Strain Measurement ◽  
Tensile Strain ◽  
Continuous Measurement ◽  
Tensile Loading ◽  
Nano Materials ◽  
Strain Data ◽  
Loading System ◽  
Au Thin Films ◽  
Strain Increase

To determine the micro-mechanical properties for micro/nano materials, it may be essential to measure the strain/deformation during micro-mechanical testing. Therefore, in this study, continuous measurement of in-plane tensile strain in micro-sized specimens of thin film materials was introduced using the micro-ESPI technique. TiN and Au thin films 1 and 0.47µm thick, respectively, were deposited on the silicon wafer and fabricated into the micro-sized tensile specimens by the electromachining process. The micro-tensile loading system and micro-ESPI system were developed to measure the tensile strain during micro-tensile loading. Micro-tensile stress-strain curves for these materials were determined using the algorithm for continuous strain measurement. Furthermore, the new algorithm for enhancing the sensitivity to measurement of in-plane tensile strain was suggested. Using the algorithm, micro-tensile strain data between interfringes were calculated. It is shown that the algorithm for enhancement of the sensitivity suggested in this study makes the sensitivity to the in-plane tensile strain increase.

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