Thermal Expansion Coefficients of 6H Silicon Carbide

2008 ◽  
Vol 600-603 ◽  
pp. 517-520 ◽  
Author(s):  
Matthias Stockmeier ◽  
Sakwe Aloysius Sakwe ◽  
Philip Hens ◽  
Peter J. Wellmann ◽  
Rainer Hock ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermal Expansion ◽  
Photon Energy ◽  
High Energy ◽  
Lattice Parameter ◽  
X Rays ◽  
Bulk Properties ◽  
Nitrogen Doped ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

The thermal expansion of 6H Silicon Carbide with different dopant concentrations of aluminum and nitrogen was determined by lattice parameter measurements at temperatures from 300 K to 1575 K. All samples have a volume of at least 6 x 6 x 6 mm3 to ensure that bulk properties are measured. The measurements were performed with a triple axis diffractometer with high energy x-rays with a photon energy of 60 keV. The values for the thermal expansion coefficients along the a- and c-direction, α11 and α33, are in the range of 3·10-6 K-1 for 300 K and 6·10-6 K-1 for 1550 K. At high temperatures the coefficients for aluminum doped samples are approximately 0.5·10-6 K-1 lower than for the nitrogen doped crystal. α11 and α33 appear to be isotropic.

Influence of Nitride on Sinterability of the Composite of Lithium Aluminum Silicate and Silicon Carbide

2006 ◽  
Vol 317-318 ◽  
pp. 177-180 ◽  
Author(s):  
Mabito Iguchi ◽  
Motohiro Umezu ◽  
Masako Kataoka ◽  
Hiroaki Nakamura ◽  
Mamoru Ishii
Keyword(s):  
Silicon Carbide ◽  
Thermal Expansion ◽  
Melting Point ◽  
Liquid Phase ◽  
Room Temperature ◽  
Aluminum Silicate ◽  
Lithium Aluminum ◽  
Sintering Process ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

Ceramics with zero thermal expansion coefficients at room temperature (293K) were investigated. We found the thermal expansion coefficient was controlled by a compounding ratio of lithium aluminum silicate (LAS) and silicon carbide (SiC), which have negative and positive thermal expansion coefficients respectively. Although it was difficult to densify the composite of the LAS and SiC (LAS/SiC) in the sintering process, an addition of nitride improved the sinterability of the LAS/SiC. In order to examine the effect of the nitride additive, at first, the melting point of the LAS with silicon nitride (Si3N4) or aluminum nitride was measured by TG-DTA. The melting point of the LAS decreased with existence of nitride. It is believed that the densification of the LAS/SiC was promoted by the nitride, because the nitride causes the LAS/SiC to form a liquid phase, thereby decreasing the melting point. Next, the lattice constant of the LAS with Si3N4 was measured by XRD and it was verified that the a-axis was longer and the c-axis was shorter than those of the LAS without additive. It is supposed that this phenomenon is due to the substitution of nitrogen for oxygen in the LAS lattice, and the decrease of the melting point of the LAS with nitride seems to be influenced by this substitution of nitrogen.

Thermal expansion coefficients of a binary alloy Ni80Zr20 at elevated temperatures

1984 ◽  
Vol 17 (5) ◽  
pp. 359-360
Author(s):  
S. K. Shadangi ◽  
U. K. Shadangi ◽  
S. C. Panda
Keyword(s):  
Thermal Expansion ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Elevated Temperatures ◽  
Intermetallic Phase ◽  
Lattice Parameter ◽  
Solid Solution Phase ◽  
Linear Variation ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

The Debye–Scherrer pattern of the alloy Ni80Zr20 clearly shows the presence of a nickel solid-solution phase along with a new intermetallic phase Ni23Zr6, which seems to be isostructural with the Co23Zr6 phase. The thermal expansion coefficient of the Ni23Zr6 phase has been investigated in the temperature range 1003–1493 K. Linear variation of lattice parameter with temperature has been observed. The thermal expansion coefficient remains almost constant throughout this temperature interval.

scholarly journals Thermal Expansion of a Multiphase Intermetallic Ti-Al-Nb-Mo Alloy Studied by High-Energy X-ray Diffraction

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 727
Author(s):  
Peter Staron ◽  
Andreas Stark ◽  
Norbert Schell ◽  
Petra Spoerk-Erdely ◽  
Helmut Clemens
Keyword(s):  
Thermal Expansion ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Expansion Coefficients ◽  
Expansion Behavior ◽  
Different Temperatures ◽  
Service Conditions ◽  
Expansion Coefficients ◽  
Alloy Properties

Intermetallic γ-TiAl-based alloys are lightweight materials for high-temperature applications, e.g., in the aerospace and automotive industries. They can replace much heavier Ni-based alloys at operating temperatures up to 750 °C. Advanced variants of this alloy class enable processing routes that include hot forming. These alloys consist of three relevant crystallographic phases (γ-TiAl, α2-Ti3Al, βo-TiAl) that transform into each other at different temperatures. For thermo-mechanical treatments as well as for adjusting alloy properties required under service conditions, the knowledge of the thermal expansion behavior of these phases is important. Therefore, thermal expansion coefficients were determined for the relevant phases in a Ti-Al-Nb-Mo alloy for temperatures up to 1100 °C using high-energy X-ray diffraction.

Thermal Expansion of Ti5Si3 with Ge, B, C, N, or O Additions

2000 ◽  
Vol 15 (8) ◽  
pp. 1780-1785 ◽  
Author(s):  
J. J. Williams ◽  
M. J. Kramer ◽  
M. Akinc
Keyword(s):  
Thermal Expansion ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
High Energy ◽  
X Ray Diffraction ◽  
Synchrotron Source ◽  
Cornell University ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients ◽  
Photon Source

The crystallographic thermal expansion coefficients of Ti5Si3 from 20 to 1000 °C as a function of B, C, N, O, or Ge content were measured by high-temperature x-ray diffraction using synchrotron sources at Cornell University (Cornell High Energy Synchrotron Source; CHESS) and Argonne National Laboratory (Advanced Photon Source; APS). Whereas the ratio of the thermal expansion coefficients along the c and a axes was approximately 3 for pure Ti5Si3, this ratio decreased to about 2 when B, C, or N atoms were added. Additions of O and Ge were less efficient at reducing this thermal expansion anisotropy. The extent by which the thermal expansion was changed when B, C, N, or O atoms were added to Ti5Si3 correlated with their expected effect on bonding in Ti5Si3.

scholarly journals Rietveld refinement for indium nitride in the 105–295 K range

2003 ◽  
Vol 18 (2) ◽  
pp. 114-121 ◽  
Author(s):  
W. Paszkowicz ◽  
R. Černý ◽  
S. Krukowski
Keyword(s):  
Thermal Expansion ◽  
Rietveld Refinement ◽  
Indium Nitride ◽  
Secondary Phase ◽  
Lattice Parameter ◽  
Lattice Parameters ◽  
Structural Parameter ◽  
Temperature Range ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

Results of Rietveld refinement for indium nitride data collected in the temperature range 105–295 K are presented. Acicular microcrystals of indium nitride prepared by reaction of liquid indium with nitrogen plasma were studied by X-ray diffraction. The diffraction measurements were carried out at the Swiss-Norwegian Beamline SNBL (ESRF) using a MAR345 image-plate detector. Excellent counting statistics allowed for refinement of the lattice parameters of InN as well as those of the metallic indium secondary phase. In the studied temperature range, the InN lattice parameters show a smooth increase that can be approximated by a linear function. Lattice-parameter dependencies confirm the trends indicated earlier by data measured using a conventional equipment. The relative change of both the a and c lattice parameters with increasing the temperature in the studied range is about 0.05%. The axial ratio slightly decreases with rising temperature. The experimental value of the free structural parameter, u=0.3769(14), is reported for InN for the first time. Its temperature variation is found to be considerably smaller than the experimental error. The thermal-expansion coefficients (TECs), derived from the linearly approximated lattice-parameter dependencies, are αa=3.09(14)×10−6 K−1 and αc=2.79(16)×10−6 K−1. The evaluated TECs are generally consistent with the earlier data. For the present dataset, the accuracy is apparently higher for both, the lattice parameters and thermal-expansion coefficients, than for the earlier results. The refined lattice parameter cIn of the indium secondary phase exhibits the known strongly nonlinear behavior; a shift (ΔT equal about −50 K) of the maximum in cIn(T) dependence is observed with respect to the literature data.

Influence of Cr deficiency on sintering, thermal expansion and electrical properties of La0.75Sr0.25Cr1−xO3−δ as a SOFC interconnect material

2016 ◽  
Vol 30 (11) ◽  
pp. 1650127 ◽  
Author(s):  
Yi Ren ◽  
Wen Ma ◽  
Xiaoying Li ◽  
Jun Wang ◽  
Yu Bai ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Electrical Properties ◽  
Perovskite Phase ◽  
Ignition Process ◽  
Thermal Expansion Coefficients ◽  
Auto Ignition ◽  
Pure Perovskite Phase ◽  
Maximum Conductivity ◽  
Expansion Coefficients ◽  
Interconnect Material

The SOFC interconnect materials La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] [Formula: see text]–[Formula: see text] were prepared using an auto-ignition process. The influences of Cr deficiency on their sintering, thermal expansion and electrical properties were investigated. All the samples were pure perovskite phase after sintering at 1400[Formula: see text]C for 4 h. The cell volume of La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] decreased with increasing Cr deficient content. The relative density of the sintered bulk samples increased from 93.2% [Formula: see text] to a maximum value of 94.7% [Formula: see text] and then decreased to 87.7% [Formula: see text]. The thermal expansion coefficients of the sintered bulk samples were in the range of [Formula: see text]–[Formula: see text] (30–1000[Formula: see text]C), which are compatible with that of YSZ. Among the investigated samples, the sample with 0.02 Cr deficiency had a maximum conductivity of 40.4 Scm[Formula: see text] and the lowest Seebeck coefficient of 154.8 [Formula: see text]VK[Formula: see text] at 850[Formula: see text]C in pure He. The experimental results indicate that La[Formula: see text]Sr[Formula: see text]Cr[Formula: see text]O[Formula: see text] has the best properties and is much suitable for SOFC interconnect material application.

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