Thermal Annealing Effect on Properties of Zn Foils Substrates
Annealing of Zn foils substrates was performed in air for 30 min at 300 oC, 400 oC and 500 oC, respectively. The effects of annealing on the structural and optical properties of Zn foils substrates were investigated using X-ray diffraction (XRD), and photoluminescence (PL) measurements. After annealing, the XRD patterns showed that the annealed ZnO films have c-axis preferential orientation, the crystallinity of the ZnO films was improved, and the grain size decreased by thermal annealing. PL spectra are clearly visible at 376 nm for ZnO film grown on Zn foils substrates. The mean grain size in the annealed ZnO microstructures was estimated using Scherrer’s equation is about 82, 76, 69 nm for 300°C, 400°C, and 500°C, respectively. A PL spectrum is clearly visible at 376 nm for ZnO microstructures grown on Zn foil substrates. The PL analysis indicates that the growth of ZnO thin film with the presence of the defect-related band. Green-yellow band emission is observed at 520 nm.