3D Packages and Assembly Methodologies

2011 ◽  
Vol 2011 (1) ◽  
pp. 001074-001078
Author(s):  
Bernd K Appelt

3D packaging is coming of age. Initially it was conceived to provide more memory in the same space. Memory die were stacked after thinning the die and bonding them on top of each other using conventional, thin die bond adhesive. The interconnect method remained wire bonding. While at first same die were stacked, the functionality was soon expanded by stacking different type of memory and or controllers in the same package. The explosive growth in mobile products and new applications while shrinking the form factor demanded a new packaging concept: the stacking of packages. The bottom package contains typically the application processor while top package holds memory, often stacked as well. Here, interconnects between packages are solder joints. As the demand for functionality and performance continues to grow relentlessly, bandwidth and electrical performance increase again demand more advanced packaging. It appears that silicon interposers, also called 2.5 D, will be the next type of packaging. The silicon interposer acts as a very high density substrate interconnecting die of different functionality. The interposer still requires an organic substrate as a CTE mismatch mitigator to connect to the motherboard. The ultimate step of the packaging technology evolution will be the real 3D package based on die to die interconnects based through silicon vias (TSV) providing the densest levels of interconnects between heterogeneous die and components.

2004 ◽  
Vol 126 (2) ◽  
pp. 237-246 ◽  
Author(s):  
Qi Zhu ◽  
Lunyu Ma ◽  
Suresh K. Sitaraman

Microsystem packages continue to demand lower cost, higher reliability, better performance and smaller size. Compliant wafer-level interconnects show great potential for next-generation packaging. G-Helix, an electroplated compliant wafer-level chip-to-substrate interconnect can facilitate wafer-level probing as well as wafer-level packaging without the need for an underfill. The fabrication of the G-Helix interconnect is similar to conventional IC fabrication process and is based on electroplating and photolithography. G-Helix interconnect has good mechanical compliance in the three orthogonal directions and can accommodate the differential displacement induced by the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate. In this paper, we report the wafer-level fabrication of an area-arrayed G-Helix interconnects. The geometry effect on the mechanical compliance and electrical parasitics of G-Helix interconnects have been studied. Thinner and narrower arcuate beams with larger radius and taller post are found to have better mechanical compliance. However, it is also found that structures with excellent mechanical compliance may not have good electrical performance. Therefore, a trade off is needed. Using response surface methodology (RSM), an optimization has been done. Furthermore, reliability of the optimized G-helix interconnects in a silicon-on-organic substrate assembly has been assessed, which includes the package weight and thermo-mechanical analysis. The pitch size effect on the electrical and mechanical performance of G-Helix interconnects has also been studied.


Author(s):  
Qi Zhu ◽  
Lunyu Ma ◽  
Suresh K. Sitaraman

Microsystem packages continue to demand lower cost, higher reliability, better performance and smaller size. Compliant wafer-level interconnects show great potential for next-generation packaging. G-Helix, an electroplated compliant wafer-level chip-to-substrate interconnect can facilitate wafer-level probing as well as wafer-level packaging without the need for an underfill. The fabrication of the G-Helix interconnect is similar to conventional IC fabrication process and is based on electroplating and photolithography. G-Helix interconnect has good mechanical compliance in the three orthogonal directions and can accommodate the differential displacement induced by the coefficient of thermal expansion (CTE) mismatch between the silicon die and the organic substrate. In this paper, we report the wafer-level fabrication of an area-arrayed G-Helix interconnects. The geometry effect on the mechanical compliance and electrical parasitics of G-Helix interconnects have been studied. Thinner and narrower arcuate beams with larger radius and taller post are found to have better mechanical compliance. However, it is also found that structures with excellent mechanical compliance may not have good electrical performance. Therefore, a trade off is needed. Using response surface methodology (RSM), an optimization has been done, and the optimal compliant G-Helix interconnect will have a total standoff height of 64 μm, radius of 36 μm and cross-section area of 93 μm2.


2018 ◽  
Vol 2018 (1) ◽  
pp. 000115-000120
Author(s):  
Mumtaz Y. Bora

Abstract Flip Chip Land Grid Array (FcLGA) packages are widely used in Mobile product applications due to their thin form factor and performance. Assembly process qualification requires careful selection of materials and optimization of reflow processes to make consistent and reliable product. The fcLGA typically uses an organic substrate on which the die is reflowed instead of the copper lead frame used in QFN packages. This requires assessment of CTE mismatch and controlled reflow processes to prevent bump separation [1]. The paper reviews the selection of substrate, optimization of assembly process and reliability testing conducted for package qualification


Author(s):  
Tara Hyland-Russell

Canadian Indigenous novels emerged as a specific genre within the last thirty years, rooted in a deep, thousands-year-old ‘performance art and poetic tradition’ of oratory, oral story, poetry, and drama. In addition to these oral and performance traditions are the ‘unique and varying methods of written communication’ that flourished long before contact with Europeans. The chapter considers Canadian novels by Indigenous writers. It shows that Indigenous fiction is deeply intertwined with history, politics, and a belief in the power of story to name, resist, and heal; that novel-length Aboriginal fiction in Canada built on a growing body of other forms of Indigenous literature; and that many Indigenous novels foreground their relationship with place and identity as key features of the resistance against systemic and institutional racism. It also examines coming-of-age novels of the 1980s and 1990s that are grounded in realism.


Proceedings ◽  
2021 ◽  
Vol 68 (1) ◽  
pp. 2
Author(s):  
Arash M. Shahidi ◽  
Theodore Hughes-Riley ◽  
Carlos Oliveira ◽  
Tilak Dias

Knitted electrodes are a key component to many electronic textiles including sensing devices, such as pressure sensors and heart rate monitors; therefore, it is essential to assess the electrical performance of these knitted electrodes under different mechanical loads to understand their performance during use. The electrical properties of the electrodes could change while deforming, due to an applied load, which could occur in the uniaxial direction (while stretched) or multiaxial direction (while compressed). The properties and performance of the electrodes could also change over time when rubbed against another surface due to the frictional force and generated heat. This work investigates the behavior of a knitted electrode under different loading conditions and after multiple abrasion cycles.


Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 346 ◽  
Author(s):  
Lili Shen ◽  
Ning Wu ◽  
Gaizhen Yan

By using through-silicon-vias (TSV), three dimension integration technology can stack large memory on the top of cores as a last-level on-chip cache (LLC) to reduce off-chip memory access and enhance system performance. However, the integration of more on-chip caches increases chip power density, which might lead to temperature-related issues in power consumption, reliability, cooling cost, and performance. An effective thermal management scheme is required to ensure the performance and reliability of the system. In this study, a fuzzy-based thermal management scheme (FBTM) is proposed that simultaneously considers cores and stacked caches. The proposed method combines a dynamic cache reconfiguration scheme with a fuzzy-based control policy in a temperature-aware manner. The dynamic cache reconfiguration scheme determines the size of the cache for the processor core according to the application that reaches a substantial amount of power consumption savings. The fuzzy-based control policy is used to change the frequency level of the processor core based on dynamic cache reconfiguration, a process which can further improve the system performance. Experiments show that, compared with other thermal management schemes, the proposed FBTM can achieve, on average, 3 degrees of reduction in temperature and a 41% reduction of leakage energy.


Author(s):  
R.J. DuMola ◽  
G.R. Heath

Abstract The plasma transferred arc process continues to be the coating method of choice for the application of cobalt base alloys onto valve and valve trim. Although new applications have been developed over the years, the process remains largely associated with the application of high performance, highly alloyed powders for relatively small parts or small areas of large parts. The use of the plasma transferred arc process for large volume application has been limited by the robustness and performance characteristics of the equipment and the use of cobalt. A new plasma transferred arc system (power source, torch and process controller) has been developed which allows the application of powder metal alloys at deposition rates of up to 40 pounds per hour. In addition, there has been a development of new non-cobalt powder alloys with excellent mixed corrosion and wear resistance properties. These capabilities have rendered the process technically and economically viable for large and demanding applications in the mining, power utility and steel industries. The new PTA system and the recent developments in powder alloys will be discussed. Reference will be made to specific applications in target industries.


2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000155-000161
Author(s):  
Christina Modes ◽  
Melanie Bawohl ◽  
Jochen Langer ◽  
Jessica Reitz ◽  
Anja Eisert ◽  
...  

Electronic circuits made by thick film technology are commonly used today in electronic circuitry for automotive applications. Densely packed multi-layer hybrid circuits are very well established for motor and transmission management in standard gasoline fuelled vehicles. As automotive technology shifts from mechanical systems to electrical systems and toward more electrically driven vehicles, such as hybrid electric vehicles and full electric vehicles, thick film systems need to be adapted to fit the challenges and needs of these new applications. The following is a description of a new set of thick film pastes, both precious and base metal, which have attributes and performance suitable for power electronics in automotive applications. The materials provide a means to use common thick film technology to build power circuits to meet the new needs, such as high current carrying capacity and thermal dissipation.


2014 ◽  
Vol 2014 (DPC) ◽  
pp. 000737-000767
Author(s):  
Cyprian Uzoh ◽  
Liang Wang ◽  
Zhuowen Sun ◽  
Andrew Cao ◽  
Bong-Sub Lee ◽  
...  

3D-IC has been increasingly adopted by the industry owing to its promise of higher device speed and package bandwidth, improved power consumption, reduced form factor, and lower cost for important applications over a wide range of industrial segments including image sensors, logic-memory and logic-logic integration, MEMS, integrated optical interposers and LEDs. This presentation is a systematic study of multiple experimental factors affecting the electrical performance, reliability and scalability of TSVs. Electrical modeling and simulation was used to determine the key factors influencing singal transmission and return losses in TSVs at high (>1 GHz) frequencies. A variety of process modules and steps for the fabrication of through silicon vias were then systematically optimized to ensure high performance. The modules evaluated include TSV etch, TSV fill, chemical mechanical polishing (CMP), pad finish, bonding schemes, wafer thinning, via reveal, passivation, wiring and bumping. One example is the improvement of TSV profile and sidewall roughness through the optimization of DRIE parameters and wet chemical methods to reduce silicon sidewall roughness from that of a typical Bosch etch to less than 10nm which is critical for adhesion of barrier/seed layer and the final reliability of 2.5D packaging. Scalability of void-free via fill process with respect to TSV diameter and depth was addressed by using highly conformal barrier layers. Adhesion of Cu to the barrier layer was also improved upon detailed analysis to prevent delamination and improve reliability. A bottom up plating chemistry with significantly low impurity content was utilized to mitigate voids, seams and excessive overburden in the TSV. Its impact on stress and delamination issues and subsequent reliability failures was studied in details. The annealing process following TSV formation is systematically studied with varying conditions and characterized with metrology and electrical tests to investigate its effect on microstructure and material properties. The process parameters were tuned for CMP of Cu, adhesion and barrier layer without causing corrosion or delamination between adjacent layers. Process requirements for these modules in TSV process are closely related. This presentation will review the process module development in the context of their effects on the integrated TSV parameters (performance, reliability and scalability). We will also provide an in-depth discussion on process module optimization, electrical and mechanical characterization and cost reduction methodologies.


2016 ◽  
Vol 2016 (DPC) ◽  
pp. 000324-000341 ◽  
Author(s):  
Chet Palesko ◽  
Amy Palesko

2.5D and 3D packaging can provide significant size and performance advantages over other packaging technologies. However, these advantages usually come at a high price. Since 2.5D and 3D packaging costs are significant, today they are only used if no other option can meet the product requirements, and most of these applications are relatively low volume. Products such as high end FPGAs, high performance GPUs, and high bandwidth memory are great applications but none have volume requirements close to mobile phones or tablets. Without the benefit of volume production, the cost of 2.5D and 3D packaging could stay high for a long time. In this paper, we will provide cost model results of a complete 2.5D and 3D manufacturing process. Each manufacturing activity will be included and the key cost drivers will be analyzed regarding future cost reductions. Expensive activities that are well down the learning curve (RDL creation, CMP, etc.) will probably not change much in the future. However, expensive activities that are new to this process (DRIE, temporary bond/debond, etc.) provide good opportunities for cost reduction. A variety of scenarios will be included to understand how design characteristics impact the cost. Understanding how and why the dominant cost components will change over time is critical to accurately predicting the future cost of 2.5D and 3D packaging.


Sign in / Sign up

Export Citation Format

Share Document