3D RCP Package Stacking: Side Connect, An Emerging Technology for System Integration and Volumetric Efficiency

2013 ◽  
Vol 2013 (1) ◽  
pp. 000447-000451 ◽  
Author(s):  
Michael Vincent ◽  
Doug Mitchell ◽  
Jason Wright ◽  
Yap Weng Foong ◽  
Alan Magnus ◽  
...  
Keyword(s):  
System Integration ◽  
System Performance ◽  
Electrical Characterization ◽  
Emerging Technology ◽  
Volumetric Efficiency ◽  
Wafer Level ◽  
Novel Technologies ◽  
3D Packaging ◽  
Packaging Space ◽  
On Chip

Fan-out wafer level packaging (FO-WLP) has shifted from standard single die, single sided package to more advanced packages for System-in-Package (SiP) and 3D applications. Freescale's FO-WLP, Redistributed Chip Package (RCP), has enabled Freescale to create novel SiP solutions not possible in more traditional packaging technologies or Systems-on-Chip (SoC). Simple SiP's using two dimensional (2D), multi-die RCP solutions have resulted in significant package size reduction and improved system performance through shortened traces when compared to discretely packaged die or substrate based multi-chip module (MCM). More complex 3D SiP solutions allow for even greater volumetric efficiency of the packaging space. 3D RCP is a flexible approach to 3D packaging with complexity ranging from Package-on-Package (PoP) type solutions to systems including ten or more multi-sourced die with associated peripheral components. Perhaps the most significant SiP capability of the RCP technology is the opportunity for heterogeneous integration. The combination of various system elements including, but not limited to SMD's, CMOS, GaAs, MEMS, imaging sensors or IPD's gives system designers the capability to generate novel systems and solutions which can then enable new products for customers. To enable this ever increasing system integration and volumetric efficiency, novel technologies have been developed to utilize the full package space. Technologies such as through package via (TPV) and double sided redistribution are currently proving successful. For this discussion, an emerging technology for 3D RCP package stacking that can further enhance design flexibility and system performance is presented. This technology, package side connect, utilizes the vertical sides of packages and stacked packages to capture a normally unused piece of package real-estate. Mechanical and electrical characterization of successful side connects will be presented as well as reliability results of test vehicle packages using RCP packaging technology.

3D & System-in-Package Development with the Redistributed Chip Package (RCP)

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 002374-002398
Author(s):  
Zhiwei (Tony) Gong ◽  
Scott Hayes ◽  
Navjot Chhabra ◽  
Trung Duong ◽  
Doug Mitchell ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Wafer Level ◽  
Wafer Level Packaging ◽  
Systems On Chip ◽  
3D Packaging ◽  
Packaging Space ◽  
Advanced Packaging ◽  
On Chip ◽  
Imaging Sensors ◽  
3D Applications

Fan-out wafer level packaging (FO-WLP) has become prevalent in past two years as a package option with large number of pin count. As the result of early development, the single die packages with single-sided redistribution has reached the maturity to take off. While the early applications start to pay back the investment on the technology, the developments have shifted to more advanced packaging solutions with System-in-Package (SiP) and 3D applications. The nature of the FO-WLP interconnect along with the material compatibility and process capability of the Redistributed Chip Package (RCP) have enabled Freescale to create novel System-in-Package (SiP) solutions not possible in more traditional packaging technologies or Systems-on-Chip. Simple SiPs using two dimensional (2D), multi-die RCP solutions have resulted in significant package size reduction and improved system performance through shortened traces when compared to discretely packaged die or a substrate based multi-chip module (MCM). More complex three dimensional (3D) SiP solutions allow for even greater volumetric efficiency of the packaging space. 3D RCP is a flexible approach to 3D packaging with complexity ranging from Package-on-Package (PoP) type solutions to systems including ten or more multi-sourced die with associated peripheral components. Perhaps the most significant SiP capability of the RCP technology is the opportunity for heterogeneous integration. The combination of various system elements including, but not limited to SMDs, CMOS, GaAs, MEMS, imaging sensors or IPDs gives system designers the capability to generate novel systems and solutions which can then enable new products for customers. The following paper further discusses SiP advantages, applications and examples created with the RCP technology. Rozalia/Ron ok move from 2.5/3D to Passive 1-4-12.

Innovative 3D Structures Utilizing Wafer Level Fan-Out (WLFO) Technology

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 001486-001519
Author(s):  
Curtis Zwenger ◽  
JinYoung Khim ◽  
YoonJoo Khim ◽  
SeWoong Cha ◽  
SeungJae Lee ◽  
...  
Keyword(s):  
Low Cost ◽  
Ease Of Use ◽  
Wafer Level ◽  
3D Structures ◽  
Wafer Level Packaging ◽  
Functional Convergence ◽  
3D Packaging ◽  
Improved Design ◽  
On Chip ◽  
Mobile Handset

The tremendous growth in the mobile handset, tablet, and networking markets has been fueled by consumer demand for increased mobility, functionality, and ease of use. This, in turn, has been driving an increase in functional convergence and 3D integration of IC devices, resulting in the need for more complex and sophisticated packaging techniques. A variety of advanced IC interconnect technologies are addressing this growing need, such as Thru Silicon Via (TSV), Chip-on Chip (CoC), and Package-on-Package (PoP). In particular, the emerging Wafer Level Fan-Out (WLFO) technology provides unique and innovative extensions into the 3D packaging realm. Wafer Level Fan-Out is a package technology designed to provide increased I/O density within a reduced footprint and profile for low density single & multi-die applications at a lower cost. The improved design capability of WLFO is due, in part, to the fine feature capabilities associated with wafer level packaging. This can allow much more aggressive design rules to be applied compared to competing laminate-based technologies. In addition, the unique characteristics of WLFO enable innovative 3D structures to be created that address the need for IC integration in emerging mobile and networking applications. This paper will review the development of WLFO and its extension into unique 3D structures. In addition, the advantages of these WLFO designs will be reviewed in comparison to current competing packaging technologies. Process & material characterization, design simulation, and reliability data will be presented to show how WLFO is poised to provide robust, reliable, and low cost 3D packaging solutions for advanced mobile and networking products.

Packaging without the Package - A More Holistic Moore's Law

2017 ◽  
Vol 2017 (S1) ◽  
pp. 1-40
Author(s):  
Subramanian S. Iyer (Subu)
Keyword(s):  
System Integration ◽  
System Level ◽  
Heterogeneous Integration ◽  
Power Performance ◽  
Wafer Level ◽  
Innovative Materials ◽  
Barrier To Entry ◽  
On Chip ◽  
Market Consolidation ◽  
Conventional Systems

Silicon features have scaled by over 1500X for over six decades, and with the adoption of innovative materials delivered better power-performance, density and till recently, cost per function, almost every generation. This has spawned a vibrant system-on-chip (SoC) approach, where progressively more function has been integrated on a single die. The integration of multiple dies on packages and boards has, however, scaled only modestly by a factor of three to five times. However, as SoCs have become bigger and more complex, the Non-Recurring Engineering (NRE) Charge and time to market have both ballooned out of control leading to ever increasing market consolidation. We need to address this problem through novel methods of system Integration. With the well-documented slowing down of scaling and the advent of the Internet of Things, there is a focus on heterogeneous integration and system-level scaling. Packaging itself is undergoing a transformation that focuses on overall system performance through integration rather than on packaging individual components. We propose ways in which this transformation can evolve to provide a significant value at the system level while providing a significantly lower barrier to entry compared with a chip-based SoC approach that is currently used. More importantly it will allow us to re-architect systems in a very significant way. This transformation is already under way with 3-D stacking of dies, Wafer level fan-out processing, and will evolve to make heterogeneous integration the backbone of a new SoC methodology, extending to integrate entire Systems on Wafers (SoWs). We will describe the technology we use and the results to-date. This has implications in redefining the memory hierarchy in conventional systems and in neuromorphic systems. We extend these concepts to flexible and biocompatible electronics.

CoC (Chip on Chip) or FtoF (Face to Face) - PossumTM Technology for 3D MEMS and ASIC eliminating the need of TSV or Wire Bonding

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000916-000936
Author(s):  
Jemmy Sutanto ◽  
D. H. Kang ◽  
J. H. Yoon ◽  
K. S. Oh ◽  
Michael Oh ◽  
...  
Keyword(s):  
Form Factor ◽  
System Integration ◽  
Wire Bonding ◽  
Electrical Performance ◽  
Wafer Level ◽  
3D Integration ◽  
Face To Face ◽  
Parasitic Resistance ◽  
On Chip ◽  
Packaging Cost

This paper describes the ongoing 3 years research and development at Amkor Technology on CoC (Chip on Chip)/FtF (Face to Face) – PossumTM technology. This technology has showed a lot of interests from the microelectronics customers/industries because of its various advantages, which include a) providing smaller form factor (SFF) to the final package, b) more functionalities (dies) can be incorporated/assembled in one package, c) improving the electrical performance - including lower parasitic resistance, lower power, and higher frequency bandwidth, and d) Opportunity for lower cost 3D system integration. Unlike other 3D Packaging technology (e.g. using TSV (Through Silicon Vias)) that requires some works in the front stream (wafer foundry) level, needs new capitals for machines/equipments, and needs modified assembly lines; CoC/FtF technology uses the existing flip Chip Attach (C/A) or TC (Thermal Compression) equipment/machine to perform the assembly joint between the two dies, which are named as the mother (larger) die and the daughter (smaller) die. Furthermore, the cost to assemble CoC/FtF is relatively inexpensive while the applications are very wide and endless, which include the 3D integration of MEMS and ASIC. The current MEMS packaging and test cost contributes about 35 to 45% to the overall MEMS unit cost. WLC (Wafer Level Capping) with wire bonding have been widely used for mass production for accelerometer (e.g. ADI and Motorola), gyroscope (e.g. Bosch and Invensense), and oscillator /timer (e.g. Discera). The WLC produce drawbacks of a large form factor and the increase in the capacitive and electrical resistances. Currently, the industries have been developing a new approach of 3D WLP (Wafer Level Packaging) by using a) TSV MEMS cap with wire bonding (e.g. Discera), b) TSV MAME cap with solder bump (e.g. Samsung, IMEC, and VTI), and c) TSV MEMS wafer/die with cap (e.g. Silex Microsystems). The needs of TSVs in the 3D WLP will add the packaging cost and reduce the design flexibility is pre-TSV wafer is used. “Amkor CoC/FtoF – PossumTM” is an alternative technology for 3D integration of MEMS and ASIC. CoC/FtoF – PossumTM does not require TSV or wire bonding; Miniaturizing form factor of 1.5 mm x 1.5 mm x 0.95 mm (including the package) of MEMS and ASIC can be achieved by using CoC/FtoF – PossumTM while Discera's design of 3D WLP requires substrate size > 2 mm x 2 mm. CoC/FtoF – PossumTM will likely produce packaging cost which is lower than WLC or 3D WLP – TSV at the same time the customer is benefited from smaller FF and reduced electrical/parasitic resistance. CoC/FtoF – PossumTM can be applied to any substrates including FCBGA and laminate. This technology also can be applied to package multiple MEMS microsensors, together with ASIC, microcontroller, and wireless RF to realize the 3D system integration.

3D Process Integration – Requirements and Challenges

2008 ◽  
Vol 1112 ◽  
Author(s):  
Juergen Max Wolf ◽  
Armin Klumpp ◽  
Kai Zoschke ◽  
Robert Wieland ◽  
Lars Nebrich ◽  
...  
Keyword(s):  
System Integration ◽  
New Technologies ◽  
Process Integration ◽  
High Volume ◽  
System Level ◽  
Wafer Level ◽  
System Architectures ◽  
Future System ◽  
3D Packaging ◽  
Third Dimension

AbstractHeterogeneous system integration is one of the key topics for future system integration. Scaling of System on Chip (SoC) alone does not address today's requirements of smart electronic systems in terms of performance, functionality, miniaturization, low production cost and time to market. The traditional microelectronic packaging will more and more convert into complex sys-tem integration. ‘More than Moore’ will be required due to tighter integration of system level components at the package level. This trend leads to advanced System in Package solutions (SiP) which require the synergy and a combination of wafer level and board integration technologies and which are rapidly evolving from a specialty technology used in a narrow set of applications to a high volume technology with wide ranging impact on electronics markets especially due to the high volume and very cost competitive consumer and communication market. Advanced SiP approaches explore the third dimension which results in complex system architectures that also require, beside new technologies and improved materials, adequate system design tools and reli-ability models. One of the most promising technology approaches is 3D packaging which in-volves a set of different integration approaches including stacked packages, silicon interposer with Through Silicon Vias (TSV) and embedding technologies. The paper highlights future sys-tem and potential technical solutions.

High-quality multiple global layers on chip-redistributed wafer for wafer-level system integration using pseudo-SOC

2011 ◽  
Vol 2011 (1) ◽  
pp. 000820-000827
Author(s):  
Atsuko IIDA ◽  
Yutaka ONOZUKA ◽  
Hiroshi YAMADA ◽  
Toshihiko NAGANO ◽  
Kazuhiko ITAYA
Keyword(s):  
Low Temperature ◽  
System Integration ◽  
Fem Simulation ◽  
High Sensitivity ◽  
High Accuracy ◽  
System Level ◽  
Level System ◽  
Wafer Level ◽  
High Quality ◽  
On Chip

This paper reports an advanced process to realize high-quality multiple global layers on high-accuracy chip-redistributed wafer for wafer-level system integration using pseudo-SOC. We have been developing pseudo-SOC (p-SOC) technology by which KGD chips are integrated to a chip-redistributed wafer using high-rigidity epoxy resin and global layers with interconnecting chips are formed on it. The basic process has been established for p-SOC, and integration of MEMS and LSI, or front-end RF LSI and passive components, has been demonstrated. However, the first stage of p-SOC technology was based on a single global layer consisting of an insulating layer and a conductive layer, which limited the range of application. It is desirable to realize high-quality multiple global layers on the high-accuracy chip-redistributed wafer in order to expand its application toward system-level integration. For this purpose, it is necessary to keep all processes at low temperature for the reduction of warpage in the resin-based chip-redistributed wafer during several resin curing processes, to readjust resin-based materials, and to obtain high accuracy of chip position in chip-redistributed wafer. We developed the advanced p-SOC process to resolve these technical issues by improving the hardening process of resin, employing low-temperature-curing polyimide and optimizing the stress analysis by FEM simulation. As a result, realization of a novel one-chip module for a versatile high-sensitivity amplifier is demonstrated.

In FAB 300mm Wafer Level Atomic Force Probe Characterization

2012 ◽  
Author(s):  
Terence Kane
Keyword(s):  
Electrical Characterization ◽  
Dark Field ◽  
Wafer Level ◽  
Electrical Measurements ◽  
Manufacturing Line ◽  
Atomic Force ◽  
Monitoring Tools ◽  
Voltage Contrast ◽  
The Cost ◽  
Non Destructive

Abstract A 300mm wafer atomic force prober (AFP) has been installed into IBM’s manufacturing line to enable rapid, nondestructive electrical identification of defects. Prior to this tool many of these defects could not detected until weeks or months later. Moving failure analysis to the FAB provides a means of complementing existing FAB inspection and defect review tools as well as providing independent, non-destructive electrical measurements at an early point in the manufacturing cycle [1] Once the wafer sites are non destructively AFP characterized, the wafer is returned to its front opening unified pod (FOUP) carrier and may be reintroduced into the manufacturing line without disruption for further inspection or processing. Whole wafer atomic force probe electrical characterization has been applied to 32nm, 28nm, 20nm and 14nm node technologies. In this paper we explore the cost benefits of performing non-destructive AFP measurements on whole wafers. We have found the methodology of employing a whole wafer AFP tool complements existing in-line manufacturing monitoring tools such as brightfield/dark field optical inspection, SEM in-line inspection and in-line E-beam voltage contrast inspection (EBI).

scholarly journals Fuzzy-Based Thermal Management Scheme for 3D Chip Multicores with Stacked Caches

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 346 ◽  
Author(s):  
Lili Shen ◽  
Ning Wu ◽  
Gaizhen Yan
Keyword(s):  
Power Consumption ◽  
Thermal Management ◽  
System Performance ◽  
Control Policy ◽  
Three Dimension ◽  
Processor Core ◽  
Management Scheme ◽  
And Performance ◽  
On Chip ◽  
Silicon Vias

By using through-silicon-vias (TSV), three dimension integration technology can stack large memory on the top of cores as a last-level on-chip cache (LLC) to reduce off-chip memory access and enhance system performance. However, the integration of more on-chip caches increases chip power density, which might lead to temperature-related issues in power consumption, reliability, cooling cost, and performance. An effective thermal management scheme is required to ensure the performance and reliability of the system. In this study, a fuzzy-based thermal management scheme (FBTM) is proposed that simultaneously considers cores and stacked caches. The proposed method combines a dynamic cache reconfiguration scheme with a fuzzy-based control policy in a temperature-aware manner. The dynamic cache reconfiguration scheme determines the size of the cache for the processor core according to the application that reaches a substantial amount of power consumption savings. The fuzzy-based control policy is used to change the frequency level of the processor core based on dynamic cache reconfiguration, a process which can further improve the system performance. Experiments show that, compared with other thermal management schemes, the proposed FBTM can achieve, on average, 3 degrees of reduction in temperature and a 41% reduction of leakage energy.

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