CoC (Chip on Chip) or FtoF (Face to Face) - PossumTM Technology for 3D MEMS and ASIC eliminating the need of TSV or Wire Bonding

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000916-000936
Author(s):  
Jemmy Sutanto ◽  
D. H. Kang ◽  
J. H. Yoon ◽  
K. S. Oh ◽  
Michael Oh ◽  
...  
Keyword(s):  
Form Factor ◽  
System Integration ◽  
Wire Bonding ◽  
Electrical Performance ◽  
Wafer Level ◽  
3D Integration ◽  
Face To Face ◽  
Parasitic Resistance ◽  
On Chip ◽  
Packaging Cost

This paper describes the ongoing 3 years research and development at Amkor Technology on CoC (Chip on Chip)/FtF (Face to Face) – PossumTM technology. This technology has showed a lot of interests from the microelectronics customers/industries because of its various advantages, which include a) providing smaller form factor (SFF) to the final package, b) more functionalities (dies) can be incorporated/assembled in one package, c) improving the electrical performance - including lower parasitic resistance, lower power, and higher frequency bandwidth, and d) Opportunity for lower cost 3D system integration. Unlike other 3D Packaging technology (e.g. using TSV (Through Silicon Vias)) that requires some works in the front stream (wafer foundry) level, needs new capitals for machines/equipments, and needs modified assembly lines; CoC/FtF technology uses the existing flip Chip Attach (C/A) or TC (Thermal Compression) equipment/machine to perform the assembly joint between the two dies, which are named as the mother (larger) die and the daughter (smaller) die. Furthermore, the cost to assemble CoC/FtF is relatively inexpensive while the applications are very wide and endless, which include the 3D integration of MEMS and ASIC. The current MEMS packaging and test cost contributes about 35 to 45% to the overall MEMS unit cost. WLC (Wafer Level Capping) with wire bonding have been widely used for mass production for accelerometer (e.g. ADI and Motorola), gyroscope (e.g. Bosch and Invensense), and oscillator /timer (e.g. Discera). The WLC produce drawbacks of a large form factor and the increase in the capacitive and electrical resistances. Currently, the industries have been developing a new approach of 3D WLP (Wafer Level Packaging) by using a) TSV MEMS cap with wire bonding (e.g. Discera), b) TSV MAME cap with solder bump (e.g. Samsung, IMEC, and VTI), and c) TSV MEMS wafer/die with cap (e.g. Silex Microsystems). The needs of TSVs in the 3D WLP will add the packaging cost and reduce the design flexibility is pre-TSV wafer is used. “Amkor CoC/FtoF – PossumTM” is an alternative technology for 3D integration of MEMS and ASIC. CoC/FtoF – PossumTM does not require TSV or wire bonding; Miniaturizing form factor of 1.5 mm x 1.5 mm x 0.95 mm (including the package) of MEMS and ASIC can be achieved by using CoC/FtoF – PossumTM while Discera's design of 3D WLP requires substrate size > 2 mm x 2 mm. CoC/FtoF – PossumTM will likely produce packaging cost which is lower than WLC or 3D WLP – TSV at the same time the customer is benefited from smaller FF and reduced electrical/parasitic resistance. CoC/FtoF – PossumTM can be applied to any substrates including FCBGA and laminate. This technology also can be applied to package multiple MEMS microsensors, together with ASIC, microcontroller, and wireless RF to realize the 3D system integration.

Temporary and permanent bonding enables 3D integration of ultrathin wafers

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 001118-001144
Author(s):  
Elisabeth Brandl ◽  
Thomas Uhrmann ◽  
Mariana Pires ◽  
Stefan Jung ◽  
Jürgen Burggraf ◽  
...  
Keyword(s):  
Mechanical Stability ◽  
Bonding Process ◽  
Total Thickness ◽  
Wafer Level ◽  
3D Integration ◽  
Process Flow ◽  
Wafer Thickness ◽  
Temporary Bonding ◽  
Carrier Wafer ◽  
On Chip

Rising demand in memory is just one example how 3D integration is still gaining momentum. Not only the form factor but also performance is improved for several 3D integration applications by reducing the wafer thickness. Two competing process flows using thin wafers are to carry out for 3D integration today. Firstly, two wafers can be bonded face-to-face with subsequent thinning without the need to handle a thin wafer. However, some chip designs require a face-to-back stacking of thin wafers, where temporary bonding becomes an inevitable process step. In this case, the challenge of the temporary bonding process is different to traditional stacking on chip level, where usually the wafers are diced after debonding and then stacked on chip level, which means die thicknesses are typically in the range of 50 μm. The goal of wafer level transfer is a massive reduction of the wafer thickness. Therefore temporary and permanent bonding has to be combined to enable stacking on wafer level with very thin wafers. The first step is temporary bonding of the device wafer with the temporary carrier through an adhesive interlayer, followed by thinning and other backside processes. Afterwards the thinned wafer is permanently bonded to the target wafer before debonding from the carrier wafer. This can be repeated several times to be suitable for example a high bandwidth memory, where several layers of DRAM are stacked on top of each other. Another application is the memory integration on processors, or die segmentation processes. The temporary bonding process flow has to be very well controlled in terms of total thickness variations (TTV) of the intermediate adhesive between device and carrier wafer. The requirements for the temporary bonding adhesive include offering sufficient adhesion between device and carrier wafer for the subsequent processes. The choice of the material class for this study is the Brewer Science dual layer material comprising of a curable layer which offers high mechanical stability to enable low TTV during the thinning process and a release layer for mechanical debond process. The release layer must lead to a successful debond but prevent spontaneous debonding during grinding and other processes. Total thickness variation values of the adhesive will be analyzed in dependence of the adhesive layer thickness as this is a key criterion for a successful implementation at the manufactures. Besides the TTV the mechanical stability during grinding will be evaluated by CSAM to make sure no delamination has happened. For feasibility of the total process flow it is important that the mechanical debonding requires less force compared to the separation of the permanent bonded wafers. Other process parameters such as edge trimming of the device wafer as well as edge removal of the mechanical debond release layer are investigated.

Large Form Factor Hybrid LGA Interconnects; Recent Applications and Technical Learning

2014 ◽  
Vol 2014 (1) ◽  
pp. 000550-000560 ◽  
Author(s):  
John Torok ◽  
Brian Beaman ◽  
William Brodsky ◽  
Shawn Canfield ◽  
Jason Eagle ◽  
...  
Keyword(s):  
Form Factor ◽  
System Integration ◽  
Mechanical Analysis ◽  
Electrical Performance ◽  
Bottom Surface ◽  
Printed Wiring Board ◽  
Module Design ◽  
External Cooling ◽  
Reliability Characteristics ◽  
Server Design

Recent high-end server design trends have continued to challenge electronic packaging engineers to design and integrate larger form factor land grid array (LGA) attached modules within their assemblies. These trends have included the application of larger, denser, organic packaged modules whose electrical performance and postencapsulation physical characteristics have been enabled by both the continued development of hybrid LGA connectors as well as new module actuation hardware designs. In this paper, we'll discuss these recent trends, including the specific technical attributes and challenges that need to be addressed to ensure a repeatable and reliable assembly design is developed. Initially, overviews of the latest connector and module design trends, including styles and physical sizes and their implications to the module's bottom surface metallurgy (BSM) flatness requirements, etc. are provided. Pursuant to this, recent system integration trending is reviewed; including both the module quantity per system assembly as well as module to module physical placements and how each of these impact printed wiring board (PWB) design (i.e., layer count, LGA site flatness, etc.) as well as the PWB assembly's solder processing characteristics (i.e., LGA pre- and post-solder attach contact co-planarity, etc.). Completing the application portion, is a description of some recent LGA actuation hardware and module external cooling apparatus designs (e.g., air-cooled heats sinks and water-cooling cold-plates and thermal interface materials (TIMs), etc.). The remaining portion of the paper is dedicated to the description of the mechanical analysis efforts completed to provide a fundamental understanding of the design's “as-assembled” attributes and a review of the associated evaluation completed to verify the integrated assembly's reliability characteristics. From the analysis methodology perspective, both the means of including each of the integrated assembly's key attributes (e.g., module mechanical construction and as encapsulated flatness, LGA contact compliance and stiffness as well as soldered contact coplanarity, TIM stiffness, actuation hardware, heat sink and cold-plate mechanical construction, etc.) and the resulting estimation of the predicted module internal TIM and hybrid-LGA's Pb-free soldered interface strains, actuation hardware stresses and LGA contact load variation are provided. Completing the discussion is a review of the variety of testing executed to validate the design's intended reliability. Included in this is a description of the test vehicle's design, the environmental stress testing conducted (i.e., mechanical pre-conditioning, accelerated thermal cycling (ATC), mixed flowing gas (MFG) and heat aging (HA), etc.) and the resulting data.

On the Origins, Status, and Future of Flip Chip & Wafer Level Packaging

2010 ◽  
Vol 2010 (1) ◽  
pp. 000325-000332 ◽  
Author(s):  
Alan Huffman ◽  
Philip Garrou
Keyword(s):  
Technological Change ◽  
Flip Chip ◽  
Emerging Technologies ◽  
Unit Area ◽  
Form Factors ◽  
Electrical Performance ◽  
Wafer Level ◽  
3D Integration ◽  
Wafer Level Packaging ◽  
Area Array

As IC scaling continues to shrink transistors, the increased number of circuits per chip requires more I/O per unit area (Rent's rule). High I/O count, the need for smaller form factors and the need for better electrical performance drove the technological change towards die being interconnected (assembled) by area array techniques. This review will examine this evolution from die wire bonded on lead frames to flip chip die in wafer level or area array packages and discuss emerging technologies such as copper pillar bumps, fan out packaging, integrated passives, and 3D integration..

3D RCP Package Stacking: Side Connect, An Emerging Technology for System Integration and Volumetric Efficiency

2013 ◽  
Vol 2013 (1) ◽  
pp. 000447-000451 ◽  
Author(s):  
Michael Vincent ◽  
Doug Mitchell ◽  
Jason Wright ◽  
Yap Weng Foong ◽  
Alan Magnus ◽  
...  
Keyword(s):  
System Integration ◽  
System Performance ◽  
Electrical Characterization ◽  
Emerging Technology ◽  
Volumetric Efficiency ◽  
Wafer Level ◽  
Novel Technologies ◽  
3D Packaging ◽  
Packaging Space ◽  
On Chip

Fan-out wafer level packaging (FO-WLP) has shifted from standard single die, single sided package to more advanced packages for System-in-Package (SiP) and 3D applications. Freescale's FO-WLP, Redistributed Chip Package (RCP), has enabled Freescale to create novel SiP solutions not possible in more traditional packaging technologies or Systems-on-Chip (SoC). Simple SiP's using two dimensional (2D), multi-die RCP solutions have resulted in significant package size reduction and improved system performance through shortened traces when compared to discretely packaged die or substrate based multi-chip module (MCM). More complex 3D SiP solutions allow for even greater volumetric efficiency of the packaging space. 3D RCP is a flexible approach to 3D packaging with complexity ranging from Package-on-Package (PoP) type solutions to systems including ten or more multi-sourced die with associated peripheral components. Perhaps the most significant SiP capability of the RCP technology is the opportunity for heterogeneous integration. The combination of various system elements including, but not limited to SMD's, CMOS, GaAs, MEMS, imaging sensors or IPD's gives system designers the capability to generate novel systems and solutions which can then enable new products for customers. To enable this ever increasing system integration and volumetric efficiency, novel technologies have been developed to utilize the full package space. Technologies such as through package via (TPV) and double sided redistribution are currently proving successful. For this discussion, an emerging technology for 3D RCP package stacking that can further enhance design flexibility and system performance is presented. This technology, package side connect, utilizes the vertical sides of packages and stacked packages to capture a normally unused piece of package real-estate. Mechanical and electrical characterization of successful side connects will be presented as well as reliability results of test vehicle packages using RCP packaging technology.

Packaging without the Package - A More Holistic Moore's Law

2017 ◽  
Vol 2017 (S1) ◽  
pp. 1-40
Author(s):  
Subramanian S. Iyer (Subu)
Keyword(s):  
System Integration ◽  
System Level ◽  
Heterogeneous Integration ◽  
Power Performance ◽  
Wafer Level ◽  
Innovative Materials ◽  
Barrier To Entry ◽  
On Chip ◽  
Market Consolidation ◽  
Conventional Systems

Silicon features have scaled by over 1500X for over six decades, and with the adoption of innovative materials delivered better power-performance, density and till recently, cost per function, almost every generation. This has spawned a vibrant system-on-chip (SoC) approach, where progressively more function has been integrated on a single die. The integration of multiple dies on packages and boards has, however, scaled only modestly by a factor of three to five times. However, as SoCs have become bigger and more complex, the Non-Recurring Engineering (NRE) Charge and time to market have both ballooned out of control leading to ever increasing market consolidation. We need to address this problem through novel methods of system Integration. With the well-documented slowing down of scaling and the advent of the Internet of Things, there is a focus on heterogeneous integration and system-level scaling. Packaging itself is undergoing a transformation that focuses on overall system performance through integration rather than on packaging individual components. We propose ways in which this transformation can evolve to provide a significant value at the system level while providing a significantly lower barrier to entry compared with a chip-based SoC approach that is currently used. More importantly it will allow us to re-architect systems in a very significant way. This transformation is already under way with 3-D stacking of dies, Wafer level fan-out processing, and will evolve to make heterogeneous integration the backbone of a new SoC methodology, extending to integrate entire Systems on Wafers (SoWs). We will describe the technology we use and the results to-date. This has implications in redefining the memory hierarchy in conventional systems and in neuromorphic systems. We extend these concepts to flexible and biocompatible electronics.

Packaging and Integration Strategy for mm-Wave Products

2018 ◽  
Vol 2018 (1) ◽  
pp. 000252-000258 ◽  
Author(s):  
Urmi Ray ◽  
NJ Cho ◽  
YC Kim ◽  
SW Yoon ◽  
WK Choi ◽  
...  
Keyword(s):  
Form Factor ◽  
Antenna Arrays ◽  
System Integration ◽  
High Performance ◽  
Heat Dissipation ◽  
System Level ◽  
Wafer Level ◽  
Automotive Radar ◽  
Rf Transceiver ◽  
Trade Offs

Abstract This paper is a follow on to the paper presented at the IMAPS 14th International Conference DEVICE PACKAGING and will provide more comprehensive case studies of few different system integration strategies for high frequency packaging. The packaging options vary widely based on the end market requirements, from performance, thermal, types and numbers of antenna arrays as well as the RF transceiver ICs. Tied closely to these performance related requirements is competing trade-offs of reliability, form factor and cost. We present assessment of packaging structures for (a) high performance mm-Wave network product and (b) consumer/mobile product and (c) automotive radar product. The former (a) is generally not challenged by form factor and can be enhanced by the addition of more antenna arrays and RFICs. However, care has to be taken to address the thermal solutions for effective heat dissipation as well as manufacturability issues as the package size may target ~400mm2 for Gen 1 and double or triple the area for subsequent generations. For (b), the primary drivers are cost and form factor. To manage antenna propagation and losses in a constrained form factor, mobile products generally require antenna in package (AiP) integration. The integration of the antenna within the same package as the RF IC greatly reduces the difficulty at the system level. This approach coupled to aggressive miniaturization of the antenna itself, using the same substrate technologies as the SiP leads to a new class of sub-systems termed Antenna in Package (AiP). This is extremely challenging from design, manufacturability and test perspectives. For example, Fan out wafer level packaging, such as eWLB packaging provides extremely smooth copper surfaces with tight etch tolerance compared to standard laminate based packaging. However, having multiport antenna structures fabricated in fan out technology with inductance matching and efficient ground ports, continue to be problematic. Hence adoption of 3D structures, in conjunction with SIP integration (with inductors and IPDs) can potentially provide relief. Inductors can also be built into the eWLB structure using the RDL as well as in the laminate packages using substrate embedded thin film cores.

The Package Becomes the System

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-36
Author(s):  
Bruce J. Barbara
Keyword(s):  
High Reliability ◽  
Electrical Performance ◽  
Entire System ◽  
Single System ◽  
Wafer Level ◽  
Electromechanical Systems ◽  
Thermal Structures ◽  
On Chip ◽  
3D Stacking ◽  
System Miniaturization

The benefits of system miniaturization lower-cost, higher electrical performance and better thermal mechanical reliability, than the current approach of discrete component packaging have been discussed at length. Several technologies have been used to address these benefits. SOC, SiP, Fan-In and Fan Out and wafer level packages. Recently there has been much discussion about Fan Out Wafer Level packaging (FOWLP) to integrate the entire system in package. However, actual implementations fall short of a complete system in a package in that only few of the chips and some passives are currently integrated into the FOWLP. But what about the rest of the system? A true system also requires additional components not traditionally considered integrate-able into a package. These include antennas, batteries, thermal structures, RF, Optical, micro-electromechanical systems (MEMs), and micro sensor functions. The current FOWLP package technology as discussed by the media falls short of this type of system integration due to limitations in the number of chips that can be integrated and the lack of sufficient interconnect layers to support these functions in a system. 3D stacking has also been employed to improve the SiP by adding memory components. These implementations are limited to stacking of identical chips with through hole silicon vias (TSV) located remotely from any circuitry. Aurora Semiconductor will introduce a packaging technology where the package becomes the system. We call this technology 4DHSiP™ or 4D Heterogeneous System in package. 4DHSiP™ is a system miniaturization technology in contrast to system on chip (SOC) at the integrated circuit level and system in package stacked ICs and packages (SIP) at the module level. 4DHSiP™ is considered an inclusive system technology in which, SIP, thermal structures and batteries are considered as substantive technologies. 3D stacking is no longer limited by the location of the TSV within the stacked components. Heterogeneous multi-chip sub module layers can be stacked to accommodate additional system components. These layers, when interconnected, form the entire system. By stacking sub module layers, specific component types can be located on the top most layer as needed by specific function (e.g. Bio functions, Optical functions, Antennas). An example of this type of module stacking used to create an optical based system will be shown.4DHSiP™ is a new, emerging system concept where the device, package, and system board are miniaturized into a single system package including all the needed system functions. Such a single system package with multiple heterogeneous ICs provides all the system functions by co-design and fabrication of digital, radiofrequency (RF), optical, micro-electromechanical systems (MEMS) in either the IC or the system package. 4DHSiP™ combines the best on chip and off chip integration technologies to develop ultra-miniaturized, high-performance, multifunctional products. A significant benefit of this miniaturization is the elimination of multiple sockets and connectors currently used to connect sub-systems together. This ultra-miniaturization of multiple to mega functions, ultrahigh performance, low cost and high reliability will be the way systems are designed in the future to achieve More than Moore.

Advanced 3D eWLB-SiP (embedded Wafer Level Ball Grid Array – System in Package) Technology

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-20
Author(s):  
Seung Wook Yoon
Keyword(s):  
Form Factor ◽  
Power Efficiency ◽  
High Performance ◽  
Electrical Characterization ◽  
Cost Effective ◽  
Electrical Performance ◽  
Wearable Electronics ◽  
Wafer Level ◽  
Low Profile ◽  
Line Spacing

FO-WLP (Fan-Out Wafer Level Packaging) has been established as one of the most versatile packaging technologies in the recent past and is already accounting for a market value of over 1 billion USD due to its unique advantages. The technology combines high performance, increased functionality with a high potential for heterogeneous integration and reduce the total form factor as well as cost-effectiveness. The emerging of advanced of silicon node technology down to 10 nanometer (nm) in support of higher performance, bandwidth and better power efficiency in mobile products pushes the boundaries of emerging packaging technologies to smaller form-factor packaging designs with finer line/spacing as well as improved thermal electrical/performance and integration of SiP or 3D capabilities. Advanced eWLB FO-WLP technology provides a versatile platform for the semiconductor industry's technology evolution from single or multi-die 2D package designs to 2.5D interposers and 3D System-in-Package (SiP) configurations. This paper reports developments that extend multi-die and 3D SiP applications with eWLB technology, including ultra thin devices or/and with an interposer substrate attachment. Test vehicles have been designed and fabricated to demonstrate and characterize integrated packaging solutions for network, mobile products including IoT and wearable electronics. The test vehicles have ranged from ~30mm2 to large sizes up to ~230mm2 and 0.4mm ball pitch. Assembly process details including 3D vertical interconnect, laser ablation, RDL processes and mechanical reliability characterizations are to be discussed with component and board level reliability results. In addition, warpage behavior and the PoP stacking process will also be presented. Innovative structure optimization that provides dual advantages of both height reduction and enhanced package reliability are reported. To enable higher interconnection density and signal routing, packages with multiple redistribution layers (RDL) and fine line/width spacing are fabricated and implemented on the eWLB platform. Successful reliability and electrical characterization results on multi-die and 3D eWLB-SiP configurations are reported as an enabling technology for highly integrated, miniaturized, low profile and cost effective solutions.

Innovative Integration Solutions for SiP Packages Using Fan-Out Wafer Level eWLB Technology

2017 ◽  
Vol 2017 (1) ◽  
pp. 000263-000269 ◽  
Author(s):  
Jacinta Aman Lim ◽  
Vinayak Pandey
Keyword(s):  
Form Factor ◽  
Line Width ◽  
Graphics Processing Units ◽  
Power Efficiency ◽  
Building Blocks ◽  
Electrical Performance ◽  
Rf Power Amplifiers ◽  
Wafer Level ◽  
Central Processing ◽  
Wafer Level Packaging

Abstract Fan-Out Wafer Level Packaging (FOWLP) has been established as one of the most versatile packaging technologies in the recent past and already accounts for a market value of over 1 billion USD due to its unique advantages. The technology combines high performance, increased functionality with a high potential for heterogeneous integration and reduced overall form factor as well as cost effectiveness. The increasing complexities in achieving a higher degree of performance, bandwidth and better power efficiency in various markets are pushing the boundaries of emerging packaging technologies to smaller form factor packaging designs with finer line/width spacing as well as improved thermal/electrical performance and the integration of System-in-Package (SiP) or 3D capabilities. SiP technology has been evolving through utilization of various package technology building blocks to serve the market needs with respect to miniaturization, higher integration, and smaller form factor as cited above, with the added benefits of lower cost and faster time to market as compared to silicon (Si) level integration, which is commonly called system-on-chip or SoC. As such, SiP incorporates flip chip (FC), wire bond (WB), and fan-out wafer-level packaging (FOWLP) as its technology building blocks and serves various end applications ranging from radio frequency (RF), power amplifiers (PA), Micro-Electro-Mechanical-Systems (MEMS) and Sensors, and connectivity, to more advanced application processors (AP), and other logic devices such as graphics processing units (GPUs)/central processing units (CPUs). FOWLP, also referred to as advanced embedded Wafer Level Ball Grid Array (eWLB) technology, provides a versatile platform for the semiconductor industry's technology evolution from single or multi-die 2D package designs to 2.5D interposers and 3D SiP configurations. This paper presents developments in SiP applications with eWLB/Fan-out WLP technology, integration of various functional blocks such as wire bonding, Package-on-Package (PoP), 2.5D, 3D, smaller form factor, embedded passives, multiple redistribution layer routing and z-height reduction. Test vehicles have been designed and fabricated to demonstrate and characterize these low profile and integrated packaging solutions for mobile products including Internet of Things (IoT)/wearable electronics (WE), MEMS and sensors. Finer line/width spacing of 2/2mm with multiple redistribution layers (RDL) are fabricated and implemented on the eWLB platform to enable higher interconnect density and signal routing. Assembly process details, component level reliability, board level reliability and characterization results for eWLB SiP will be discussed.

scholarly journals Design and Demonstration of Glass Panel Embedding for 3D System Packages for Heterogeneous Integration Applications

2019 ◽  
Vol 16 (3) ◽  
pp. 124-135 ◽  
Author(s):  
Siddharth Ravichandran ◽  
Shuhei Yamada ◽  
Tomonori Ogawa ◽  
Tailong Shi ◽  
Fuhan Liu ◽  
...  
Keyword(s):  
Form Factor ◽  
High Performance ◽  
Coefficient Of Thermal Expansion ◽  
Large Body ◽  
Electrical Performance ◽  
Heterogeneous Integration ◽  
Wafer Level ◽  
Glass Panel ◽  
Packaging Technology ◽  
3D Packaging

Abstract This article demonstrates a next-generation high-performance 3D packaging technology with smaller form factor, excellent electrical performance, and reliability for heterogeneous integration. High-density logic-memory integration, today, is built predominantly using interposers which are fundamentally limited in assembly pitch and interconnect lengths, and they also are expensive as the package sizes increase. On the other hand, high-frequency applications continue to use laminates which are also limited by package size and ability to integrate many components. Wafer-level fan-out (WLFO) packaging promises better performance and form factor at lower costs, but current WLFO packages are mold-based and hence are limited to small packages. This article presents a 3D packaging technology using glass panel embedding (GPE) for high-performance with potential for large body size heterogeneous integration applications. The tailorable coefficient of thermal expansion of glass allows a reliable direct board attach of large GPE packages that not only benefits the form factor and signal speed but also provides radical benefits to power delivery. Unlike interposers and silicon bridges, GPE packages are not bump-limited and can support I/O densities comparable with backend-of-line with silicon-like redistribution wiring at much lower costs. The fundamental limitations such as die shift and poor dimensional stability of current organic WLFO packages are addressed by parametric process improvements to reduce die shift to <2 μm while also improving the RDL surface planarity for high-yielding fine-line structures and integrating through glass via (TGV) in the fan-out region for 3D packaging. This article describes the fabrication process for 3D GPE, leading to demonstration of a technology using embedding of chips with all-Cu interconnections at 40-μm I/O pitch with TGVs at 300-μm pitch, thus enabling double-side RDL and assembly of chips to achieve three levels of device integration.

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