scholarly journals Probing Perovskite Carrier Dynamics under Sunlight

2022 ◽  
Author(s):  
Bo-Han Li ◽  
Huang Li ◽  
Zhipeng Xuan ◽  
Wen Zeng ◽  
Jia-Cheng Wang ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Lead Iodide ◽  
Ultrafast Dynamic ◽  
Perovskite Materials ◽  
Response Range ◽  
Highly Sensitive ◽  
High Carrier ◽  
Linear Response Range

Abstract Understanding the nature of photogenerated carriers and their subsequent dynamics in perovskites is important for the development of related materials and devices. Most ultrafast dynamic measurements on the perovskite materials were conducted under high carrier densities, which likely obscures the genuine dynamics at low carrier densities under solar illumination conditions. In this study, we presented a detailed experimental study of the carrier density-dependent dynamics in hybrid lead iodide perovskites using a highly sensitive transient absorption spectrometer. We found that the carrier lifetime was about a hundred nanosecond in the linear response range, representing sunlight excitation, which was much longer than under high carrier densities. We also elucidated that the fast carrier decay (<1 ps) and the medium decay processes (tens of ps) occurred via the defect state trapping, and we determined its effects on the utilization percentage of photogenerated carriers through quantitative analysis. Furthermore, we obtained the Shockley-Queisser limit that took into account the carrier trapping effect, which directly reflected the material performance.

Nonequilibrium Carrier Dynamics in DPB-Free 3C-SiC Layer Studied by Dynamic Grating Technique in Wide Excitation and Temperature Range

2007 ◽  
Vol 556-557 ◽  
pp. 395-398 ◽  
Author(s):  
K. Neimontas ◽  
Kęstutis Jarašiūnas ◽  
Maher Soueidan ◽  
Gabriel Ferro ◽  
Yves Monteil
Keyword(s):  
Diffusion Coefficient ◽  
Carrier Density ◽  
Carrier Lifetime ◽  
Impurity Scattering ◽  
Carrier Dynamics ◽  
Ionized Impurity Scattering ◽  
High Carrier ◽  
Trapping Centers ◽  
Dynamic Grating ◽  
Picosecond Dynamic

We applied picosecond dynamic grating technique for studies of carrier dynamics in ntype DPB(double positioning boundary)-free 3C-SiC (111) epilayer grown by VLS (vapour-liquidsolid) mechanism on 6H-SiC (0001). The measurements of bipolar diffusion coefficient D and carrier lifetime τR in the samples at various pump energies (0.5 – 3.0 mJ/cm2) and temperatures (9 – 300 K) provided the values of bipolar mobility of ~ 80 cm2/Vs and τR = 1.5 - 2.0 ns at 300 K. The ionized impurity scattering, dominant at T < 100 K, and carrier-density dependent lifetimes in 10- 300 K range were attributed to contribution of trapping centers which electrical activity saturates at high carrier density.

scholarly journals The development of Formamidinium lead Iodide based Perovskite Solar Cells: Efficiency and Stability

2022 ◽  
Author(s):  
Ziwei Zheng ◽  
Shiyu Wang ◽  
Yue Hu ◽  
Yaoguang Rong ◽  
Anyi Mei ◽  
...  
Keyword(s):  
Solar Cells ◽  
Binding Energy ◽  
Absorption Coefficient ◽  
Light Absorption ◽  
Carrier Lifetime ◽  
Perovskite Solar Cells ◽  
High Light ◽  
Lead Iodide ◽  
Perovskite Materials ◽  
Light Absorption Coefficient

Perovskite materials have been particularly eye-catching by virtue of its excellent properties, such as high light absorption coefficient, long carrier lifetime, low exciton binding energy and bipolarity transmission, etc. Limited...

The impact of highly excessive PbI2 on the correlation of MAPbI3 perovskite morphology and carrier lifetimes

2020 ◽  
Vol 8 (41) ◽  
pp. 14481-14489
Author(s):  
Van Hoang Nguyen ◽  
Tuan K. A. Hoang ◽  
Yasuyoshi Kurokawa ◽  
Noritaka Usami
Keyword(s):  
Carrier Lifetime ◽  
Lead Iodide ◽  
Step Method ◽  
Carrier Lifetimes ◽  
High Carrier ◽  
Methylammonium Lead Iodide ◽  
The Impact

The morphology of methylammonium lead iodide MAPbI3, formed by a two-step method with non-stoichiometric, excessive PbI2 concentration for a high carrier lifetime is reported.

scholarly journals Charge carrier dynamics of methylammonium lead iodide: from PbI2-rich to low-dimensional broadly emitting perovskites

2016 ◽  
Vol 18 (16) ◽  
pp. 10800-10808 ◽  
Author(s):  
Johannes R. Klein ◽  
Oliver Flender ◽  
Mirko Scholz ◽  
Kawon Oum ◽  
Thomas Lenzer
Keyword(s):  
Charge Carrier ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Transient Absorption Spectroscopy ◽  
Lead Iodide ◽  
Charge Carrier Dynamics ◽  
Carrier Recombination ◽  
Recombination Rate Constant ◽  
Low Dimensional ◽  
Methylammonium Lead Iodide

Broadband transient absorption spectroscopy reveals an increased carrier recombination rate constant of low-dimensional perovskites.

scholarly journals Manipulation of hot carrier cooling dynamics in two-dimensional Dion–Jacobson hybrid perovskites via Rashba band splitting

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jun Yin ◽  
Rounak Naphade ◽  
Partha Maity ◽  
Luis Gutiérrez-Arzaluz ◽  
Dhaifallah Almalawi ◽  
...  
Keyword(s):  
Transient Absorption ◽  
Phonon Scattering ◽  
Transient Absorption Spectroscopy ◽  
Band Model ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Hot Carrier ◽  
Band Splitting ◽  
Perovskite Materials ◽  
Spin Polarized

AbstractHot-carrier cooling processes of perovskite materials are typically described by a single parabolic band model that includes the effects of carrier-phonon scattering, hot phonon bottleneck, and Auger heating. However, little is known (if anything) about the cooling processes in which the spin-degenerate parabolic band splits into two spin-polarized bands, i.e., the Rashba band splitting effect. Here, we investigated the hot-carrier cooling processes for two slightly different compositions of two-dimensional Dion–Jacobson hybrid perovskites, namely, (3AMP)PbI4 and (4AMP)PbI4 (3AMP = 3-(aminomethyl)piperidinium; 4AMP = 4-(aminomethyl)piperidinium), using a combination of ultrafast transient absorption spectroscopy and first-principles calculations. In (4AMP)PbI4, upon Rashba band splitting, the spin-dependent scattering of hot electrons is responsible for accelerating hot-carrier cooling at longer delays. Importantly, the hot-carrier cooling of (4AMP)PbI4 can be extended by manipulating the spin state of the hot carriers. Our findings suggest a new approach for prolonging hot-carrier cooling in hybrid perovskites, which is conducive to further improving the performance of hot-carrier-based optoelectronic and spintronic devices.

scholarly journals Common Phase and Structure Misidentifications in High-Resolution TEM Characterization of Perovskite Materials

2020 ◽  
Vol 6 (1) ◽  
pp. 1
Author(s):  
Yu-Hao Deng
Keyword(s):  
High Resolution ◽  
Research Field ◽  
Structure Characterization ◽  
Phase Identification ◽  
Lead Iodide ◽  
Perovskite Materials ◽  
High Resolution Tem ◽  
Methylammonium Lead Iodide ◽  
Dose Imaging

High-resolution TEM (HRTEM) is a powerful tool for structure characterization. However, methylammonium lead iodide (MAPbI3) perovskite is highly sensitive to electron beams and easily decomposes into lead iodide (PbI2). Misidentifications, such as PbI2 being incorrectly labeled as perovskite, are widely present in HRTEM characterization and would negatively affect the development of perovskite research field. Here misidentifications in MAPbI3 perovskite are summarized, classified, and corrected based on low-dose imaging and electron diffraction (ED) simulations. Corresponding crystallographic parameters of intrinsic tetragonal MAPbI3 and the confusable hexagonal PbI2 are presented unambiguously. Finally, the method of proper phase identification and some strategies to control the radiation damage in HRTEM are provided. This warning paves the way to avoid future misinterpretations in HRTEM characterization of perovskite and other electron beam-sensitive materials.

Pollen-Shaped Hierarchical Structure for Pressure Sensors with High Sensitivity in an Ultrabroad Linear Response Range

2020 ◽  
Vol 12 (49) ◽  
pp. 55362-55371
Author(s):  
Tingting Zhao ◽  
Li Yuan ◽  
Tongkuai Li ◽  
Longlong Chen ◽  
Xifeng Li ◽  
...  
Keyword(s):  
Hierarchical Structure ◽  
Linear Response ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Response Range ◽  
Linear Response Range

scholarly journals Deciphering the role of quantum dot size in the ultrafast charge carrier dynamics at the perovskite–quantum dot interface

2020 ◽  
Vol 8 (42) ◽  
pp. 14834-14844
Author(s):  
Piotr Piatkowski ◽  
Sofia Masi ◽  
Pavel Galar ◽  
Mario Gutiérrez ◽  
Thi Tuyen Ngo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Charge Carrier ◽  
Rate Constants ◽  
Transient Absorption ◽  
Carrier Dynamics ◽  
Carrier Transfer ◽  
Charge Carrier Dynamics ◽  
Conduction Bands

Charge-carrier transfer (CT) from the perovskite host to PbS QDs were studied using fs-transient absorption and THz techniques. The CT rate constants increase with the size of QDs due to a change in the position of valence and conduction bands in PbS QDs.

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1187-1190 ◽  
Author(s):  
Q. Jon Zhang ◽  
Charlotte Jonas ◽  
Joseph J. Sumakeris ◽  
Anant K. Agarwal ◽  
John W. Palmour
Keyword(s):  
Carrier Lifetime ◽  
Drift Region ◽  
Gate Bias ◽  
Enhancement Layer ◽  
Channel Mobility ◽  
Dc Characteristics ◽  
Blocking Voltage ◽  
High Carrier ◽  
P Type ◽  
First Time

DC characteristics of 4H-SiC p-channel IGBTs capable of blocking -12 kV and conducting -0.4 A (-100 A/cm2) at a forward voltage of -5.2 V at 25°C are demonstrated for the first time. A record low differential on-resistance of 14 mW×cm2 was achieved with a gate bias of -20 V indicating a strong conductivity modulation in the p-type drift region. A moderately doped current enhancement layer grown on the lightly doped drift layer effectively reduces the JFET resistance while maintains a high carrier lifetime for conductivity modulation. A hole MOS channel mobility of 12.5 cm2/V-s at -20 V of gate bias was measured with a MOS threshold voltage of -5.8 V. The blocking voltage of -12 kV was achieved by Junction Termination Extension (JTE).

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