scholarly journals A Wireless Passive Humidity Threshold Monitoring Solution Based on a Permanent Resistance Change

2014 ◽  
Vol 87 ◽  
pp. 688-691 ◽  
Author(s):  
Sebastian Sauer ◽  
Wolf-Joachim Fischer
Author(s):  
Frank S. Arnold

Abstract To be better prepared to use laser based failure isolation techniques on field failures of complex integrated circuits, simple test structures without any failures can be used to study Optical Beam Induced Resistance Change (OBIRCH) results. In this article, four case studies are presented on the following test structures: metal strap, contact string, VIA string, and comb test structure. Several experiments were done to investigate why an OBIRCH image was seen in certain areas of a VIA string and not in others. One experiment showed the OBRICH variation was not related to the cooling and heating effects of the topology, or laser beam focusing. A 4 point probe resistance measurement and cross-sectional views correlated with the OBIRCH results and proved OBIRCH was able to detect a variation in VIA fabrication.


Author(s):  
Sukho Lee ◽  
John van den Biggelaar ◽  
Marc van Veenhuizen

Abstract Laser-based dynamic analysis has become a very important tool for analyzing advanced process technology and complex circuit design. Thus, many good reference papers discuss high resolution, high sensitivity, and useful applications. However, proper interpretation of the measurement is important as well to understand the failure behavior and find the root cause. This paper demonstrates this importance by describing two insightful case studies with unique observations from laser voltage imaging/laser voltage probing (LVP), optical beam induced resistance change, and soft defect localization (SDL) analysis, which required an in-depth interpretation of the failure analysis (FA) results. The first case is a sawtooth LVP signal induced by a metal short. The second case, a mismatched result between an LVP and SDL analysis, is a good case of unusual LVP data induced by a very sensitive response to laser light. The two cases provide a good reference on how to properly explain FA results.


Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.


Author(s):  
Byoung-Joon Kim ◽  
Hae-A-Seul Shin ◽  
In-Suk Choi ◽  
Young-Chang Joo

Abstract The electrical resistance Cu film on flexible substrate was investigated in cyclic bending deformation. The electrical resistance of 1 µm thick Cu film on flexible substrate increased up to 120 % after 500,000 cycles in 1.1 % tensile bending strain. Crack and extrusion were observed due to the fatigue damage of metal film. Low bending strain did not cause any damage on metal film but higher bending strain resulted in severe electrical and mechanical damage. Thinner film showed higher fatigue resistance because of the better mechanical property of thin film. Cu film with NiCr under-layer showed poorer fatigue resistance in tensile bending mode. Ni capping layer did not improve the fatigue resistance of Cu film, but Al capping layer suppressed crack formation and lowered electrical resistance change. The NiCr under layer, Ni capping layer, and Al capping layer effect on electrical resistance change of Cu film was compared with Cu only sample.


2018 ◽  
Author(s):  
Satish Kodali ◽  
Liangshan Chen ◽  
Yuting Wei ◽  
Tanya Schaeffer ◽  
Chong Khiam Oh

Abstract Optical beam induced resistance change (OBIRCH) is a very well-adapted technique for static fault isolation in the semiconductor industry. Novel low current OBIRCH amplifier is used to facilitate safe test condition requirements for advanced nodes. This paper shows the differences between the earlier and novel generation OBIRCH amplifiers. Ring oscillator high standby leakage samples are analyzed using the novel generation amplifier. High signal to noise ratio at applied low bias and current levels on device under test are shown on various samples. Further, a metric to demonstrate the SNR to device performance is also discussed. OBIRCH analysis is performed on all the three samples for nanoprobing of, and physical characterization on, the leakage. The resulting spots were calibrated and classified. It is noted that the calibration metric can be successfully used for the first time to estimate the relative threshold voltage of individual transistors in advanced process nodes.


Author(s):  
Chi-Lin Huang ◽  
Yu Hsiang Shu

Abstract Conventional isolation techniques, such as Optical Beam Induced Resistance Change (OBIRCH) or photoemission microscopy (PEM) frequently fail to locate failure points when only applied to power pin of the semiconductor device. In this paper, a novel OBIRCH failure isolation technique is utilized to detect leakage failures. Different test conditions are presented to identify the differences in current when all input pins are pulled high in an OBIRCH system. In order to verify a failure point, it is necessary to perform electrical analysis of the suspected failure point in the failing sample. In general, Conductive Atomic Force Microscope (C-AFM) and a Nano-Prober is sufficient to provide the electrical data required for failure analysis. Experiment results, however, prove that this novel OBIRCH failure isolation technique is effective in locating the failure point, especially for leakage failures. The failure mechanism is illustrated using cross-sectional TEM.


Author(s):  
Antonio Orozco ◽  
Elena Talanova ◽  
Anders Gilbertson ◽  
L.A. Knauss ◽  
Zhiyong Wang ◽  
...  

Abstract As integrated circuit packages become more complicated, the localization of defects becomes correspondingly more difficult. One particularly difficult class of defects to localize is high resistance (HR) defects. These defects include cracked traces, delaminated vias, C4 non-wet defects, PTH cracks, and any other package or interconnect structure that results in a signal line resistance change that exceeds the specification of the device. These defects can result in devices that do not run at full speed, are not reliable in the field, or simply do not work at all. The main approach for localizing these defects today is time domain reflectometry (TDR) [1]. TDR sends a short electrical pulse into the device and monitors the time to receive reflections. These reflections can correspond to shorts, opens, bends in a wire, normal interfaces between devices, or high resistance defects. Ultimately anything that produces an electrical impedance change will produce a TDR response. These signals are compared to a good part and require time consuming layer-by-layer deprocessing and comparison to a standard part. When complete, the localization is typically at best to within 200 microns. A new approach to isolating high resistance defects has been recently developed using current imaging. In recent years, current imaging through magnetic field detection has become a main-stream approach for short localization in the package [2] and is also heavily utilized for die level applications [3]. This core technology has been applied to the localization of high resistance defects. This paper will describe the approach, and give examples of test samples as well as results from actual yield failures.


2020 ◽  
Author(s):  
Rong Yuan ◽  
Xie Yao-Ping ◽  
Tong Li ◽  
Chen-Hao Xu ◽  
Mei-Yi Yao ◽  
...  

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 982 ◽  
Author(s):  
Xin Wu ◽  
Hong Wang ◽  
Guoqian Jiang ◽  
Ping Xie ◽  
Xiaoli Li

Health monitoring of wind turbine gearboxes has gained considerable attention as wind turbines become larger in size and move to more inaccessible locations. To improve the reliability, extend the lifetime of the turbines, and reduce the operation and maintenance cost caused by the gearbox faults, data-driven condition motoring techniques have been widely investigated, where various sensor monitoring data (such as power, temperature, and pressure, etc.) have been modeled and analyzed. However, wind turbines often work in complex and dynamic operating conditions, such as variable speeds and loads, thus the traditional static monitoring method relying on a certain fixed threshold will lead to unsatisfactory monitoring performance, typically high false alarms and missed detections. To address this issue, this paper proposes a reliable monitoring model for wind turbine gearboxes based on echo state network (ESN) modeling and the dynamic threshold scheme, with a focus on supervisory control and data acquisition (SCADA) vibration data. The aim of the proposed approach is to build the turbine normal behavior model only using normal SCADA vibration data, and then to analyze the unseen SCADA vibration data to detect potential faults based on the model residual evaluation and the dynamic threshold setting. To better capture temporal information inherent in monitored sensor data, the echo state network (ESN) is used to model the complex vibration data due to its simple and fast training ability and powerful learning capability. Additionally, a dynamic threshold monitoring scheme with a sliding window technique is designed to determine dynamic control limits to address the issue of the low detection accuracy and poor adaptability caused by the traditional static monitoring methods. The effectiveness of the proposed monitoring method is verified using the collected SCADA vibration data from a wind farm located at Inner Mongolia in China. The results demonstrated that the proposed method can achieve improved detection accuracy and reliability compared with the traditional static threshold monitoring method.


Sign in / Sign up

Export Citation Format

Share Document