A comprehensive analysis on nanostructured materials in a thermoelectric micro-system based on geometric shape, segmentation structure and load resistance

AbstractIn this study, we report the novel energy behavior of high-performance nanostructured materials in a segmented thermoelectric micro-generator (TEG). Several physical elements of the materials must be considered to determine their behavior in the thermoelectric energy conversion: temperature dependence of material properties, geometric structure, segmentation, and the symmetry of each or both p-type and n-type nanostructure semiconductor thermoelements. Recently, many efforts have reported effects independent on the thermoelectric performance of semiconductor materials. In this work, exhaustive research on the performance of high-performance nanostructured materials in a segmented thermoelectric micro-generator (TEG) was carried out. Our results show the efficiency and output power of the TEG using the temperature-dependent model, i.e., a variable internal resistance for a load resistance of the system. Our approach allows us to analyze symmetrical and asymmetric geometries, showing maximum and minimum peaks values in the performance of the TEG for specific $$\gamma $$ γ values. The performance of the TEG is improved by about $$6\%$$ 6 % and $$7\%$$ 7 % , for efficiency, and output power, respectively, considering a trapezoidal geometric shape in the 2p-3n segmented system, compared with the conventional rectangular shape.

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High performance 0.25 [micro sign]m p-type Ge/SiGe MODFETs

Electronics Letters ◽

10.1049/el:19981284 ◽

1998 ◽

Vol 34 (19) ◽

pp. 1888 ◽

Cited By ~ 45

Author(s):

G. Höck ◽

T. Hackbarth ◽

U. Erben ◽

E. Kohn ◽

U. König

Keyword(s):

High Performance ◽

P Type

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P-type Co3O4 nanoarrays decorated on the surface of n-type flower-like WO3 nanosheets for high-performance gas sensing

Sensors and Actuators B Chemical ◽

10.1016/j.snb.2019.02.101 ◽

2019 ◽

Vol 288 ◽

pp. 104-112 ◽

Cited By ~ 12

Author(s):

Yanghai Gui ◽

Lele Yang ◽

Kuan Tian ◽

Hongzhong Zhang ◽

Shaoming Fang

Keyword(s):

High Performance ◽

Gas Sensing ◽

P Type ◽

Co3o4 Nanoarrays

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Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

NPG Asia Materials ◽

10.1038/s41427-021-00314-y ◽

2021 ◽

Vol 13 (1) ◽

Author(s):

Muhammad Naqi ◽

Kyung Hwan Choi ◽

Hocheon Yoo ◽

Sudong Chae ◽

Bum Jun Kim ◽

...

Keyword(s):

Low Temperature ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Optical Measurements ◽

Electrical Performance ◽

Large Area ◽

Nanowire Network ◽

P Type ◽

Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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Analytical Modeling of a Doubly Clamped Flexible Piezoelectric Energy Harvester with Axial Excitation and Its Experimental Characterization

Sensors ◽

10.3390/s21113861 ◽

2021 ◽

Vol 21 (11) ◽

pp. 3861

Author(s):

Jie Mei ◽

Qiong Fan ◽

Lijie Li ◽

Dingfang Chen ◽

Lin Xu ◽

...

Keyword(s):

Output Power ◽

Power Output ◽

Output Voltage ◽

Energy Harvester ◽

Load Resistance ◽

Engineering Practice ◽

Maximum Output ◽

Widespread Application ◽

Piezoelectric Energy ◽

Axial Excitation

With the rapid development of wearable electronics, novel power solutions are required to adapt to flexible surfaces for widespread applications, thus flexible energy harvesters have been extensively studied for their flexibility and stretchability. However, poor power output and insufficient sensitivity to environmental changes limit its widespread application in engineering practice. A doubly clamped flexible piezoelectric energy harvester (FPEH) with axial excitation is therefore proposed for higher power output in a low-frequency vibration environment. Combining the Euler–Bernoulli beam theory and the D’Alembert principle, the differential dynamic equation of the doubly clamped energy harvester is derived, in which the excitation mode of axial load with pre-deformation is considered. A numerical solution of voltage amplitude and average power is obtained using the Rayleigh–Ritz method. Output power of 22.5 μW at 27.1 Hz, with the optimal load resistance being 1 MΩ, is determined by the frequency sweeping analysis. In order to power electronic devices, the converted alternating electric energy should be rectified into direct current energy. By connecting to the MDA2500 standard rectified electric bridge, a rectified DC output voltage across the 1 MΩ load resistor is characterized to be 2.39 V. For further validation of the mechanical-electrical dynamical model of the doubly clamped flexible piezoelectric energy harvester, its output performances, including both its frequency response and resistance load matching performances, are experimentally characterized. From the experimental results, the maximum output power is 1.38 μW, with a load resistance of 5.7 MΩ at 27 Hz, and the rectified DC output voltage reaches 1.84 V, which shows coincidence with simulation results and is proved to be sufficient for powering LED electronics.

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2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

Materials Advances ◽

10.1039/d1ma00215e ◽

2021 ◽

Author(s):

Suman Yadav ◽

Shivani Sharma ◽

Satinder K Sharma ◽

Chullikkattil P. Pradeep

Keyword(s):

Organic Semiconductors ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Organic Thin Film ◽

Effect Transistor ◽

Solution Processable ◽

P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

Micromachines ◽

10.3390/mi9080412 ◽

2018 ◽

Vol 9 (8) ◽

pp. 412 ◽

Cited By ~ 9

Author(s):

Evans Bernardin ◽

Christopher Frewin ◽

Richard Everly ◽

Jawad Ul Hassan ◽

Stephen Saddow

Keyword(s):

Silicon Carbide ◽

High Performance ◽

Electrical Characterization ◽

Electrode Impedance ◽

Voltage Range ◽

Promising Solution ◽

Multiple Materials ◽

Diode Behavior ◽

Materials Used ◽

P Type

Intracortical neural interfaces (INI) have made impressive progress in recent years but still display questionable long-term reliability. Here, we report on the development and characterization of highly resilient monolithic silicon carbide (SiC) neural devices. SiC is a physically robust, biocompatible, and chemically inert semiconductor. The device support was micromachined from p-type SiC with conductors created from n-type SiC, simultaneously providing electrical isolation through the resulting p-n junction. Electrodes possessed geometric surface area (GSA) varying from 496 to 500 K μm2. Electrical characterization showed high-performance p-n diode behavior, with typical turn-on voltages of ~2.3 V and reverse bias leakage below 1 nArms. Current leakage between adjacent electrodes was ~7.5 nArms over a voltage range of −50 V to 50 V. The devices interacted electrochemically with a purely capacitive relationship at frequencies less than 10 kHz. Electrode impedance ranged from 675 ± 130 kΩ (GSA = 496 µm2) to 46.5 ± 4.80 kΩ (GSA = 500 K µm2). Since the all-SiC devices rely on the integration of only robust and highly compatible SiC material, they offer a promising solution to probe delamination and biological rejection associated with the use of multiple materials used in many current INI devices.

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