Annealing treatment of focused gallium ion beam processing of SERS gold substrate

A new method is applied to investigate the relationship between the yield strength and annealing temperature for a Cu film. By Ion Beam Assisted Magnetron Sputtering (IAMS), Cu film with 2.4 µm thickness was deposited on a strip of super high strength steel 37SiMnCrNiMoV, and the specimens were treated by vacuum-annealing at different temperature. The X-ray tensile test was used to measure the longitudinal and transverse stresses and applied strain for Cu film. Based on the experimental results, the equivalent stress s and the equivalent uniaxial strain t e can be obtained. According to the s- t e relation, the calculated proof stress is acquired. The results indicate that the proof stress of the film decreases with the increasing of annealing temperature. When annealing temperature rises from 150ı to 300ı, the decreasing amplitude of proof stress is the largest. The phenomenon can be explained by the recrystallization and microstructure evolution in Cu film during the annealing treatment.

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Resistivity change of the diamondlike carbon, deposited by focused-ion-beam chemical vapor deposition, induced by the annealing treatment

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2978400 ◽

2008 ◽

Vol 26 (6) ◽

pp. 2628-2631 ◽

Cited By ~ 12

Author(s):

Reo Kometani ◽

Toshinari Ichihashi ◽

Kazuhiro Kanda ◽

Tsuneo Suzuki ◽

Koichi Niihara ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Focused Ion Beam ◽

Ion Beam ◽

Annealing Treatment ◽

Chemical Vapor ◽

Resistivity Change ◽

Diamondlike Carbon

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Influence of Annealing Temperature on the Antibacterial Activities and Photoactivity of N-Doped TiO2 Films by Ion Beam Assistance

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.189-193.1258 ◽

2011 ◽

Vol 189-193 ◽

pp. 1258-1262 ◽

Cited By ~ 2

Author(s):

Xiao Ling Cheng ◽

Yong Jun Hu ◽

She Jun Hu ◽

Lin Yu ◽

Guang Rong Xie

Keyword(s):

Photocatalytic Activity ◽

Annealing Temperature ◽

Ion Beam ◽

Annealing Treatment ◽

Antibacterial Activities ◽

Amorphous Structure ◽

Vacuum Arc ◽

E Coli ◽

Vacuum Arc Deposition ◽

Arc Deposition

The N-doped TiO2films were prepared by cathode vacuum arc deposition with ion beam assisted. Influence of annealing temperature on the microstructure, optical property, photocatalytic activity and antibacterial activities of the N-doped TiO2films was studied. The experimental results indicate that annealing treatment significantly affects both microstructure and photoactivity. All the as deposited N-doped TiO2films retained an amorphous structure, the crystalline structure of N-doped TiO2films annealed in the range 400°C- 600°C were examined to be of anatase structure with a (101) preferential orientation，photocatalytic activity of the N-doped TiO2film annealed at 500°C was best under visible light, The N-doped TiO2films against E. coli and S. aureus had more than 99% antibacterial rate, and the antibacterial activity of the N-doped TiO2films stronger slightly with the increase of the annealing temperature.

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An Interface-Sensitive Conversion Electron Mössbauer Spectroscopic Study of the Ion Beam Induced Reactions at Fe-Si Interface.

MRS Proceedings ◽

10.1557/proc-25-241 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 1

Author(s):

V.P. Godbole ◽

V.G. Bhide ◽

S.V. Ghaisas ◽

S.M. Kanetkar ◽

R.S. Joshee ◽

...

Keyword(s):

Thin Layer ◽

Spectroscopic Study ◽

Conversion Electron ◽

Ion Beam ◽

Annealing Treatment ◽

Ion Energy ◽

Natural Iron ◽

Energy Processing ◽

Directed Energy ◽

First Time

ABSTRACTThe ion beam induced reactions at Fe-Si interface are studied for the first time using a novel interface-sensitive Mössbauer probe.The samples used in these studies are prepared by depositing a thin layer (<450A°) of enriched Fe57 isotope (95.45% by composition) on a freshly cleaned silicon (111) substrate followed by a deposition of a 150Ao film of natural iron (Fe 57 only 2.2%).These samples are subjected to Xetion bombardment at an incident ion energy of 100 keV and a dose of 6 × 1015 ions/cm2 The technique of Conversion Electron Mössbauer Spectroscopy (CEMS) is used to characterize the formation and growth of different phases as a function of annealing treatment. The spectra are leastsquare fitted using the MOSFIT programme.The MHssbauer lines for as-deposited and ion bombarded samples show a considerable broadening, which is a clear signature of a large concentration of defects formed at the interface due to ion beam induced collision cascades. As the samples are annealed the resonance lines are sharpened indicating recovery of stoichiometrically well-defined phases from an initial defective state. The present study indicates formation of FeSi and Fe3 Si phases after the annealing treatment-RBS measurements are used to confirm the mixing.These results are analyzed in terms of the non-equilibrium features of the directed energy processing of interface.

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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Effects of Ion Beam Milling on Surface Topography

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070862 ◽

1973 ◽

Vol 31 ◽

pp. 84-85

Author(s):

P.G. Pawar ◽

P. Duhamel ◽

G.W. Monk

Keyword(s):

Surface Topography ◽

Ion Beam ◽

Solid Material ◽

Beam Current ◽

Atomic Mass ◽

Micro Milling ◽

Ion Milling ◽

Controlled Atmospheres ◽

Milling Operations ◽

Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

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Nucleation and Early Growth of Sputtered thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069570 ◽

1970 ◽

Vol 28 ◽

pp. 516-517

Author(s):

Dudley M. Sherman ◽

Thos. E. Hutchinson

Keyword(s):

Thin Films ◽

Electron Beam ◽

Ion Beam ◽

Ion Source ◽

Water Cooling ◽

Stages Of Growth ◽

Lens Assembly ◽

Microscope Technique ◽

Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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SEM analysis of DC magnetron sputtered beryllium films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106867 ◽

1988 ◽

Vol 46 ◽

pp. 960-961

Author(s):

E. F. Lindsey ◽

C. W. Price ◽

E. L. Pierce ◽

E. J. Hsieh

Keyword(s):

Fine Structure ◽

Electron Emission ◽

Secondary Electron ◽

Low Voltage ◽

Ion Beam ◽

Secondary Electron Emission ◽

Sem Analysis ◽

Fused Silica ◽

Grain Structure ◽

Silica Substrate

Columnar structures produced by DC magnetron sputtering can be altered by using RF biased sputtering or by exposing the film to nitrogen pulses during sputtering, and these techniques are being evaluated to refine the grain structure in sputtered beryllium films deposited on fused silica substrates. Beryllium is brittle, and fractures in sputtered beryllium films tend to be intergranular; therefore, a convenient technique to analyze grain structure in these films is to fracture the coated specimens and examine them in an SEM. However, fine structure in sputtered deposits is difficult to image in an SEM, and both the low density and the low secondary electron emission coefficient of beryllium seriously compound this problem. Secondary electron emission can be improved by coating beryllium with Au or Au-Pd, and coating also was required to overcome severe charging of the fused silica substrate even at low voltage. The coating structure can obliterate much of the fine structure in beryllium films, but reasonable results were obtained by using the high-resolution capability of an Hitachi S-800 SEM and either ion-beam coating with Au-Pd or carbon coating by thermal evaporation.

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Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100097466 ◽

1981 ◽

Vol 39 ◽

pp. 162-163

Author(s):

L. J. Chen ◽

L. S. Hung ◽

J. W. Mayer

Keyword(s):

Ion Beam ◽

Chemical Vapor ◽

Interfacial Reactions ◽

Practical Applications ◽

Microelectronic Devices ◽

Recent Emergence ◽

Chemical Vapor Deposited ◽

Atomic Mixing ◽

Silicon Interface ◽

Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

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