Optical heating of doped semiconductor nanocylinders supporting quasi-BIC modes

In the recent years, semiconductor and dielectric nanophotonic structures attracted a lot of attention for their resonant optical properties finding applications in thermal tuning and optical heating. Exciting high quality optical modes of both electric and magnetic nature in nanoresonators of high-index materials, one can effectively enhance optical absorption in such structures. Another big advantage of semiconductor materials is the ability to finely control the level of optical losses in visible and near infrared (near-IR) range through varying the doping level. In this work, we show theoretically that by moderate carrier doping of silicon via donors from group V materials one can achieve effective heating of nanoresonators. We show that by tuning the doping level of crystalline silicon supporting high quality non-radiative modes based on quasi bound states in the continuum one can achieve strong heating in near-IR under continuous wave regime illumination. We believe that our finding will pave the way for an efficient semiconductor near-IR all-optical sensors and nanoheaters.