scholarly journals A large-area CMOS detector for high-energy synchrotron powder diffraction and total scattering experiments

2014 ◽  
Vol 47 (1) ◽  
pp. 449-457 ◽  
Author(s):  
Paula Macarena Abdala ◽  
Henrik Mauroy ◽  
Wouter van Beek
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Energy Response ◽  
Large Area ◽  
Total Scattering ◽  
High Resolution Data ◽  
X Ray Scattering ◽  
Synchrotron Powder Diffraction

A complementary metal-oxide semiconductor (CMOS) detector with an active area of 290.8 × 229.8 mm has been evaluated for X-ray scattering experiments at energies between 20 and 50 keV. Detector calibration and integration procedures are discussed in addition to the determination of the linearity, angular resolution and energy response of the detector in the context of its envisaged use. Data on reference compounds and samples with different crystallinity were collected and analysed with classical Rietveld and pair distribution function refinements. Comparisons with literature and high-resolution data from the same beamline demonstrate that the presented detector is suitable for crystallographic and total scattering experiments.

scholarly journals Overview of CMOS Sensors for Future Tracking Detectors

Instruments ◽  
2020 ◽  
Vol 4 (4) ◽  
pp. 36
Author(s):  
Ricardo Marco-Hernández
Keyword(s):  
High Energy Physics ◽  
Complementary Metal Oxide Semiconductor ◽  
High Energy ◽  
Oxide Semiconductor ◽  
High Resistivity ◽  
Large Area ◽  
Cmos Sensors ◽  
Signal Sensitivity ◽  
Physics Experiments ◽  
General Perspective

Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized.

A Bio-inspired and Low-power 2D Machine Vision with Adaptive Machine Learning and Forgetting

2021 ◽  
Author(s):  
Akhil Dodda ◽  
Darsith Jayachandran ◽  
Shiva Subbulakshmi Radhakrishnan ◽  
Saptarshi Das
Keyword(s):  
Machine Vision ◽  
Energy Gap ◽  
Critical Role ◽  
Visual Stimuli ◽  
Bright Light ◽  
Complementary Metal Oxide Semiconductor ◽  
Active Role ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Large Area

Abstract Natural intelligence has many dimensions, and in animals, learning about the environment and making behavioral changes are some of its manifestations. In primates vision plays a critical role in learning. The underlying biological neural networks contain specialized neurons and synapses which not only sense and process the visual stimuli but also learns and adapts, with remarkable energy efficiency. Forgetting also plays an active role in learning. Mimicking the adaptive neurobiological mechanisms for seeing, learning, and forgetting can, therefore, accelerate the development of artificial intelligence (AI) and bridge the massive energy gap that exists between AI and biological intelligence. Here we demonstrate a bio-inspired machine vision based on large area grown monolayer 2D phototransistor array integrated with analog, non-volatile, and programmable memory gate-stack that not only enables direct learning, and unsupervised relearning from the visual stimuli but also offers learning adaptability under photopic (bright-light), scotopic (low-light), as well as noisy illumination conditions at miniscule energy expenditure. In short, our “all-in-one” hardware vision platform combines “sensing”, “computing” and “storage” not only to overcome the von Neumann bottleneck of conventional complementary metal oxide semiconductor (CMOS) technology but also to eliminate the need for peripheral circuits and sensors.

Effects of etching holes on complementary metal oxide semiconductor–microelectromechanical systems capacitive structure

2012 ◽  
Vol 24 (3) ◽  
pp. 310-317 ◽  
Author(s):  
Wei-Hsiang Tu ◽  
Wen-Chang Chu ◽  
Chih-Kung Lee ◽  
Pei-Zen Chang ◽  
Yuh-Chung Hu
Keyword(s):  
Metal Oxide ◽  
Microelectromechanical Systems ◽  
Sacrificial Layer ◽  
Estimation Method ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Fringe Field ◽  
Large Area ◽  
Fringing Field

Etching the large area of sacrificial layer under the microstructure to be released is a common method used in microelectromechanical systems technology. In order to completely release the microstructures, many etching holes are often required on the microstructure to enable the etchant to completely etch the sacrificial layer. However, the etching holes often alter the electromechanical properties of the micro devices, especially capacitive devices, because the fringe fields induced by the etching holes can significantly alter the electrical properties. This article is aimed at evaluating the fringe field capacitance caused by etching holes on microstructures. The authors aim to find a general capacitance compensation formula for the fringe capacitance of etching holes by the use of ANSYS simulation. According to the simulation results, the design of a capacitive structure with small etching holes is recommended to prevent an extreme capacitance decrease. In conclusion, this article provides a fringing field capacitance estimation method that shows the capacitance compensation tendency of the design of etching holes; this method is expected to be applicable to the design in capacitive devices of complementary metal oxide semiconductor–microelectromechanical systems technology.

Silicon and Dopant Ink-Based CMOS TFTs on Flexible Steel Foils

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1259-1265
Author(s):  
Aditi Chandra ◽  
Mao Takashima ◽  
Arvind Kamath
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
High Volume ◽  
Oxide Semiconductor ◽  
Large Area ◽  
Process Flow ◽  
Additive Materials ◽  
P Type ◽  
Process Compatibility ◽  
Stainless Steel Foils ◽  
Steel Foils

ABSTRACTPolysilicon complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs) are fabricated on large area, flexible stainless steel foils using novel ink depositions within a hybrid printed/conventional process flow. A self-aligned top gate TFT structure is realized with an additive materials approach to substitute the use of high capital cost ion implantation and lithography processes. Polyhydrosilane-based silicon ink is coated and laser crystallized to form the polysilicon channel. Semiconductor grade P-type and N-type unique dopant ink formulations are screen printed and combined with thermal drive in and activation to form self-aligned doped source and drain regions. A high refractory top gate material is chosen for its process compatibility with printed dopants, chemical resistance, and work function. Steel foil substrates are fully encapsulated to allow for high temperature processing. The resultant materials set and process flow enables TFT electrical characteristics with NMOS and PMOS mobilities exceeding 120 cm2/Vs and 60 cm2/Vs, respectively. On/Off ratios are >107. Reproducibility, uniformity, and reliability data in a production environmental is shown to demonstrate high volume, high throughput manufacturability. The device characteristics and scheme enable NFC (13.56MHz) capable circuits for use in flexible NFC and display-based smart labels and packaging.

scholarly journals TiO2-x films for bolometer applications: recent progress and perspectives

2021 ◽  
Author(s):  
Qiming Zhang ◽  
Ruiyang Yan ◽  
Xiaoyan Peng ◽  
YuShui Wang ◽  
Shuanglong Feng
Keyword(s):  
Infrared Imaging ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Performance Parameters ◽  
Large Area ◽  
Temperature Coefficient Of Resistance ◽  
Sensitive Material ◽  
Good Thermal Stability ◽  
Photoelectric Performance

Abstract The bolometer is widely used in military and civilian infrared imaging due to its advantages of non-cooling, small size and portability. Thermosensitive materials seriously affect the performance of bolometers. As a kind of heat-sensitive material, the TiO2-x material has the advantages of good thermal stability, large-area preparation, and compatibility with the complementary metal-oxide semiconductor (CMOS) process. However, there is almost no review on the application of titanium oxide for bolometers. In this paper, we introduce the bolometer's main thermal and photoelectric performance parameters and the critical technologies to manufacture the bolometer. Finally, we will particularly emphasize the effects of preparation process parameters of TiO2 on the performance parameters temperature coefficient of resistance (TCR), 1/f noise, etc., were studied.

A novel design of nano router with high-speed crossbar scheduler for digital systems in QCA paradigm

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Kalpana Kasilingam ◽  
Paulchamy Balaiah
Keyword(s):  
High Speed ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Modern Technology ◽  
Oxide Semiconductor ◽  
Large Area ◽  
Content Type ◽  
Compact Size ◽  
High Power Consumption ◽  
High Speed Data

Purpose The nano-router would be a mastery device for providing high-speed data delivery. Here nano-router with a space-efficient crossbar scheduler is used for making absolutely less consumption in power. Design/methodology/approach In the emerging modern technology, every one of us is expecting a delivery of data at a high speed. To achieve high-speed delivery the authors are using the router. The router used here is at nanoscale reading which provides a compact size. Findings This can be implemented using the modern tools called Quantum-dot Cellular Automata (QCA) which is operated without the use of a transistor. As conventional complementary metal oxide semiconductor (CMOS) designs have some limitations such as low density, high power consumption and requirement of a large area. Research limitations/implications To overcome these limitations the QCA is used. It characterizes capability is used to substituting CMOS technology. The round-robin fashion is used in a high-speed space-efficient crossbar scheduler. Practical implications The simulation of the planned circuit with notional information established the practical identity of the scheme. Social implications The proposed nano router can be stimulated in the QCA environment using the QCADesigner tool and the power of the router can be calculated with the QCADesigner–E tool. Originality/value The proposed nano router can be stimulated in the QCA environment using the QCADesigner tool and the power of the router can be calculated with the QCADesigner–E tool. In this work, the performance of the router can be done in both the QCA environment and CMOS technology.

scholarly journals Imaging-based spectrometer-less optofluidic biosensors based on dielectric metasurfaces for detecting extracellular vesicles

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yasaman Jahani ◽  
Eduardo R. Arvelo ◽  
Filiz Yesilkoy ◽  
Kirill Koshelev ◽  
Chiara Cianciaruso ◽  
...  
Keyword(s):  
Real Time ◽  
Extracellular Vesicles ◽  
Bound States ◽  
Point Of Care ◽  
Complementary Metal Oxide Semiconductor ◽  
Spectral Shift ◽  
Processing Technique ◽  
Oxide Semiconductor ◽  
Linear Estimator ◽  
Large Area

AbstractBiosensors are indispensable tools for public, global, and personalized healthcare as they provide tests that can be used from early disease detection and treatment monitoring to preventing pandemics. We introduce single-wavelength imaging biosensors capable of reconstructing spectral shift information induced by biomarkers dynamically using an advanced data processing technique based on an optimal linear estimator. Our method achieves superior sensitivity without wavelength scanning or spectroscopy instruments. We engineered diatomic dielectric metasurfaces supporting bound states in the continuum that allows high-quality resonances with accessible near-fields by in-plane symmetry breaking. The large-area metasurface chips are configured as microarrays and integrated with microfluidics on an imaging platform for real-time detection of breast cancer extracellular vesicles encompassing exosomes. The optofluidic system has high sensing performance with nearly 70 1/RIU figure-of-merit enabling detection of on average 0.41 nanoparticle/µm2 and real-time measurements of extracellular vesicles binding from down to 204 femtomolar solutions. Our biosensors provide the robustness of spectrometric approaches while substituting complex instrumentation with a single-wavelength light source and a complementary-metal-oxide-semiconductor camera, paving the way toward miniaturized devices for point-of-care diagnostics.

scholarly journals Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 327 ◽  
Author(s):  
Takayuki Nozaki ◽  
Tatsuya Yamamoto ◽  
Shinji Miwa ◽  
Masahito Tsujikawa ◽  
Masafumi Shirai ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
High Speed ◽  
Recent Progress ◽  
Semiconductor Industry ◽  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Electrical Current ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Dynamic Switching

The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.

scholarly journals Large-area metasurface on CMOS-compatible fabrication platform: driving flat optics from lab to fab

Nanophotonics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 3071-3087 ◽  
Author(s):  
Nanxi Li ◽  
Zhengji Xu ◽  
Yuan Dong ◽  
Ting Hu ◽  
Qize Zhong ◽  
...  
Keyword(s):  
Mass Production ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Critical Dimension ◽  
Optical Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Large Area ◽  
Immersion Lithography ◽  
Manufacturing Technologies

AbstractA metasurface is a layer of subwavelength-scale nanostructures that can be used to design functional devices in ultrathin form. Various metasurface-based optical devices – coined as flat optics devices – have been realized with distinction performances in research laboratories using electron beam lithography. To make such devices mass producible at low cost, metasurfaces over a large area have also been defined with lithography steppers and scanners, which are commonly used in semiconductor foundries. This work reviews the metasurface process platforms and functional devices fabricated using complementary metal-oxide-semiconductor-compatible mass manufacturing technologies. Taking both fine critical dimension and mass production into account, the platforms developed at the Institute of Microelectronics (IME), A*STAR using advanced 12-inch immersion lithography have been presented with details, including process flow and demonstrated optical functionalities. These developed platforms aim to drive the flat optics from lab to fab.

scholarly journals Interactions between Terrestrial Cosmic-Ray Neutrons and III–V Compound Semiconductors

2020 ◽  
Author(s):  
Daniela Munteanu ◽  
Jean-Luc Autran
Keyword(s):  
Bulk Material ◽  
Complementary Metal Oxide Semiconductor ◽  
Cosmic Ray ◽  
Compound Semiconductors ◽  
Reaction Rates ◽  
Binary Compound ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Secondary Products ◽  
The Impact

This work explores by numerical simulation the impact of high-energy atmospheric neutrons and their interactions with III–V binary compound semiconductors. The efforts have focused on eight III–V semiconductors: GaAs, AlAs, InP, InAs, GaSb, InSb, GaN, and GaP. For each material, extensive Geant4 numerical simulations have been performed considering a bulk target exposed to a neutron source emulating the atmospheric neutron spectrum at terrestrial level. Results emphasize in detail the reaction rates per type of reaction (elastic, inelastic, nonelastic) and offer a classification of all the neutron-induced secondary products as a function of their atomic number, kinetic energy, initial stopping power, and range. Implications for single-event effects (SEEs) are analyzed and discussed, notably in terms of energy and charge deposited in the bulk material and in the first nanometers of particle range with respect to the critical charge for modern complementary metal oxide semiconductor (CMOS) technologies.

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