Thermally aware modeling and performance for MWCNT bundle as VLSI interconnects for high performance integrated circuits

2015 ◽  
Author(s):  
Karmjit Singh Sandha ◽  
Balwinder Raj
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Vlsi Interconnects ◽  
And Performance

Buffer for High Performance in CNT Based VLSI Interconnects

2018 ◽  
Vol 24 (8) ◽  
pp. 5975-5981
Author(s):  
A Karthikeyan ◽  
P. S Mallick
Keyword(s):  
Integrated Circuits ◽  
Packing Density ◽  
Power Dissipation ◽  
High Performance ◽  
Critical Path ◽  
Vlsi Interconnects ◽  
Performance Constraints ◽  
Interconnect Delay ◽  
Interconnect Optimization ◽  
Technology Nodes

Integrated circuits (IC’s) are sized for higher performance and packing density. Interconnects are major components to carry signals between transistors. Interconnect delay increases due to increase in length of interconnect. Optimization of interconnects is more essential to improve the performance of integrated circuits. Repeater insertion is an important technique used in optimizing the performance of interconnects in integrated circuits. Repeaters have to be designed to satisfy the performance constraints. In this paper we have designed a new repeater using transistors and analyzed the performance at various bias levels. The Repeater design was implemented at various technology nodes using PTM models and Bulk CMOS. Delay and power dissipation are analyzed for various voltage levels and load levels using Spice simulations. The results show that the proposed repeater has lesser delay compared to the conventional repeater with an increase of power dissipation and they are more suitable for Critical path in VLSI interconnects. They can be applicable for CNT based VLSI interconnects.

A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on Simox

1987 ◽  
Vol 107 ◽  
Author(s):  
P.K. Vasudev ◽  
K.W. Terrill ◽  
S. Seymour
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Silicon Films ◽  
Ring Oscillator ◽  
Cmos Integrated Circuits ◽  
And Performance ◽  
High Transconductance ◽  
Soi Technology ◽  
Very High

AbstractThe use of ultrathin SIMOX wafers for fabricating submicrometer CMOS integrated circuits is described. It is demonstrated from ring oscillator speeds that properly designed devices can exhibit very high transconductance and performance superior to circuits using bulk Si.

Thermal Issues in Next Generation Integrated Circuits

2003 ◽  
Author(s):  
Siva Gurrum ◽  
Shivesh Suman ◽  
Yogendra Joshi ◽  
Andrei Fedorov
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Power Dissipation ◽  
High Performance ◽  
Electronic Devices ◽  
Heat Removal ◽  
Current Generation ◽  
Fundamental Limits ◽  
Convection Boundary ◽  
And Performance

Effective cooling of electronic chips is crucial for reliability and performance of electronic devices. Steadily increasing power dissipation in both devices and interconnects motivate the investigation of chip-centric thermal management as opposed to traditional package-centric solutions. In this work, we explore the fundamental limits for heat removal from a model chip for various configurations. Temperature rise when the chip is embedded in an infinite solid is computed for different thermal conductivities of the medium to pin down the best that can be achieved with conduction based thermal management. Next, a chip attached to a spreader plate with convection boundary condition on top was considered. A brief review of interface thermal resistances and partitioning of overall thermal resistance is presented for current generation microprocessors. Based upon the analysis it is concluded that far-term cooling solutions might necessitate integration with chip/interconnect-stack to meet the challenges. In addition, this would require concurrent thermal and electrical design/fabrication of future high-performance microprocessors.

Compliant Wafer Level Package

2001 ◽  
Author(s):  
Chirag Patel ◽  
Kevin P. Martin ◽  
James D. Meindl
Keyword(s):  
Performance Analysis ◽  
Integrated Circuits ◽  
High Performance ◽  
Wafer Level ◽  
Electronic Products ◽  
Packaging Technology ◽  
Technology Roadmap ◽  
Wafer Level Packaging ◽  
And Performance ◽  
Wafer Level Package

Abstract A high I/O density and high performance wafer level packaging technology called the Compliant Wafer Level Package (CWLP) is reported. The necessity for compliant interconnects in upcoming generations of electronic products is discussed by analyzing the technology requirements projected by the International Technology Roadmap for Semiconductors (ITRS). To be a true wafer level package, the technology should have following three characteristics11: I) package all Integrated Circuits (ICs) intact on wafer at once, II) perform wafer level test and burn-in, and III) assemble the WLP on the system board without using an underfill. Compliant interconnects are essential to accomplishing wafer level test and assembly without underfill. These topics are discussed in the paper followed by fabrication and performance analysis of the CWLP technology.

Trace nanoanalysis

1994 ◽  
Vol 52 ◽  
pp. 940-941
Author(s):  
D. E. Newbury ◽  
R. D. Leapman
Keyword(s):  
High Performance ◽  
Secondary Ion Mass Spectrometry ◽  
Detection Efficiency ◽  
Volume Element ◽  
And Performance ◽  
Trace Constituents ◽  
Secondary Ion ◽  
Concentration Levels ◽  
Structure Properties

Trace constituents, which can be very loosely defined as those present at concentration levels below 1 percent, often exert influence on structure, properties, and performance far greater than what might be estimated from their proportion alone. Defining the role of trace constituents in the microstructure, or indeed even determining their location, makes great demands on the available array of microanalytical tools. These demands become increasingly more challenging as the dimensions of the volume element to be probed become smaller. For example, a cubic volume element of silicon with an edge dimension of 1 micrometer contains approximately 5×1010 atoms. High performance secondary ion mass spectrometry (SIMS) can be used to measure trace constituents to levels of hundreds of parts per billion from such a volume element (e. g., detection of at least 100 atoms to give 10% reproducibility with an overall detection efficiency of 1%, considering ionization, transmission, and counting).

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Enhancements of Non-contact Measurements of Electrical Waveforms on the Proximity of a Signal Surface Using Groups of Pulses

2002 ◽  
Author(s):  
Fenglei Du ◽  
Greg Bridges ◽  
D.J. Thomson ◽  
Rama R. Goruganthu ◽  
Shawn McBride ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Signal To Noise Ratio ◽  
Electrostatic Force ◽  
Single Pulse ◽  
Electric Signal ◽  
Measurement Instruments ◽  
Cycle Times ◽  
Force Microscopy ◽  
And Performance

Abstract With the ever-increasing density and performance of integrated circuits, non-invasive, accurate, and high spatial and temporal resolution electric signal measurement instruments hold the key to performing successful diagnostics and failure analysis. Sampled electrostatic force microscopy (EFM) has the potential for such applications. It provides a noninvasive approach to measuring high frequency internal integrated circuit signals. Previous EFMs operate using a repetitive single-pulse sampling approach and are inherently subject to the signal-to-noise ratio (SNR) problems when test pattern duty cycle times become large. In this paper we present an innovative technique that uses groups of pulses to improve the SNR of sampled EFM systems. The approach can easily provide more than an order-ofmagnitude improvement to the SNR. The details of the approach are presented.

https://imsciences.edu.pk/files/journals/vol12_2/New%201%20MA.864.pdf

2020 ◽  
Vol 12 (2) ◽  
pp. 19-50 ◽  
Author(s):  
Muhammad Siddique ◽  
Shandana Shoaib ◽  
Zahoor Jan
Keyword(s):  
Organizational Performance ◽  
Structural Equation ◽  
High Performance ◽  
Service Sector ◽  
Performance Outcomes ◽  
Theory And Practice ◽  
Relational Coordination ◽  
Multiple Sources ◽  
And Performance ◽  
High Level

A key aspect of work processes in service sector firms is the interconnection between tasks and performance. Relational coordination can play an important role in addressing the issues of coordinating organizational activities due to high level of interdependence complexity in service sector firms. Research has primarily supported the aspect that well devised high performance work systems (HPWS) can intensify organizational performance. There is a growing debate, however, with regard to understanding the “mechanism” linking HPWS and performance outcomes. Using relational coordination theory, this study examines a model that examine the effects of subsets of HPWS, such as motivation, skills and opportunity enhancing HR practices on relational coordination among employees working in reciprocal interdependent job settings. Data were gathered from multiple sources including managers and employees at individual, functional and unit levels to know their understanding in relation to HPWS and relational coordination (RC) in 218 bank branches in Pakistan. Data analysis via structural equation modelling, results suggest that HPWS predicted RC among officers at the unit level. The findings of the study have contributions to both, theory and practice.

scholarly journals Study on strong spinning preparation method and mechanism of the industrial pure titanium ultrafine crystallization

2019 ◽  
Vol 14 ◽  
pp. 155892501989525
Author(s):  
Yu Yang ◽  
Yanyan Jia
Keyword(s):  
Heat Treatment ◽  
High Performance ◽  
Pure Titanium ◽  
Grain Structure ◽  
Theoretical Research ◽  
Ultrafine Grain ◽  
Forming Process ◽  
Spinning Process ◽  
And Performance ◽  
Material Utilization

Ultrafine crystallization of industrial pure titanium allowed for higher tensile strength, corrosion resistance, and thermal stability and is therefore widely used in medical instrumentation, aerospace, and passenger vehicle manufacturing. However, the ultrafine crystallizing batch preparation of tubular industrial pure titanium is limited by the development of the spinning process and has remained at the theoretical research stage. In this article, the tubular TA2 industrial pure titanium was taken as the research object, and the ultrafine crystal forming process based on “5-pass strong spin-heat treatment-3 pass-spreading-heat treatment” was proposed. Based on the spinning process test, the ultimate thinning rate of the method is explored and the evolution of the surface microstructure was analyzed by metallographic microscope. The research suggests that the multi-pass, medium–small, and thinning amount of spinning causes the grain structure to be elongated in the axial and tangential directions, and then refined, and the axial fiber uniformity is improved. The research results have certain scientific significance for reducing the consumption of high-performance metals improving material utilization and performance, which also promote the development of ultrafine-grain metals’ preparation technology.

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