Buffer for High Performance in CNT Based VLSI Interconnects

2018 ◽  
Vol 24 (8) ◽  
pp. 5975-5981
Author(s):  
A Karthikeyan ◽  
P. S Mallick
Keyword(s):  
Integrated Circuits ◽  
Packing Density ◽  
Power Dissipation ◽  
High Performance ◽  
Critical Path ◽  
Vlsi Interconnects ◽  
Performance Constraints ◽  
Interconnect Delay ◽  
Interconnect Optimization ◽  
Technology Nodes

Integrated circuits (IC’s) are sized for higher performance and packing density. Interconnects are major components to carry signals between transistors. Interconnect delay increases due to increase in length of interconnect. Optimization of interconnects is more essential to improve the performance of integrated circuits. Repeater insertion is an important technique used in optimizing the performance of interconnects in integrated circuits. Repeaters have to be designed to satisfy the performance constraints. In this paper we have designed a new repeater using transistors and analyzed the performance at various bias levels. The Repeater design was implemented at various technology nodes using PTM models and Bulk CMOS. Delay and power dissipation are analyzed for various voltage levels and load levels using Spice simulations. The results show that the proposed repeater has lesser delay compared to the conventional repeater with an increase of power dissipation and they are more suitable for Critical path in VLSI interconnects. They can be applicable for CNT based VLSI interconnects.

A High-Performance Full Adder Circuit Based on a Novel 7-T XOR-XNOR Cell

2013 ◽  
Vol 321-324 ◽  
pp. 361-366
Author(s):  
Yan Yu Ding ◽  
De Ming Wang ◽  
Qing Qing Huang ◽  
Hong Zhou Tan
Keyword(s):  
Power Dissipation ◽  
High Performance ◽  
Critical Path ◽  
Full Adder ◽  
Path Delay ◽  
Feedback Path ◽  
Voltage Loss ◽  
Transmission Gates ◽  
Voltage Swing ◽  
Power Delay Product

A high performance full adder circuit with full voltage-swing based on a novel 7-transistor xor-xnor cell is proposed in this paper. In our design, we exploit a novel 7-transistor xor-xnor circuit with a signal level restorer in a feedback path to settle the threshold voltage loss problem. Then we present a new high-performance 1-bit full adder based on the designed xor-xnor cell, pass-transistors and transmission gates. The simulation results prove that, compared with other designs in literature, the proposed full adder shows its superiority for less power dissipation, lower critical path delay and smaller power-delay product, and still provides full voltage swing in all nodes of the circuit.

scholarly journals 4-bit Carry Look Ahead Adder Using MGDI Technique

2021 ◽  
Vol 9 (9) ◽  
pp. 855-860
Author(s):  
Shaik Mahammad Ameer Afridi
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
Power Dissipation ◽  
High Performance ◽  
Digital Signal ◽  
Vlsi Circuits ◽  
Digital Vlsi ◽  
Look Ahead ◽  
Energy Trade ◽  
Integral Role

Abstract: Today's high-performance processor is built with arithmetic logic units that add and subtract key components. Design considerations related to low power and high performance digital VLSI circuits have become more prevalent in today's world. In order to develop low-power and high-performance processors, the designers need to design their adder circuits with the required speed and power dissipation for their applications. This topic introduces the concept of a adder using MGDI Technique. The Exact Speculative Carry Look Ahead Adder the use of the Modified-GDI (Modified-Gate Diffusion Input) is cautioned in this work. The delay, location and energy trade off performs a integral role in VLSI. We already comprehend that designs which are of CMOS fashion occupy extra area might also eat extra strength consumption. The switching conduct of the circuit reason the heating up of integrated circuits affects the working stipulations of the purposeful unit. The adders are the most important parts of countless applications such as microprocessors, microcontrollers and digital signal processors and additionally in actual time applications. Hence it is necessary to minimize the adder blocks to format a perfect processor. This work is proposed on a 16 bit carry seem to be in advance adder is designed through using MGDI gate and 4T XOR gates and a speculator blocks. The proposed MGDI raise Look Ahead adder occupies 68% much less region and the strength consumption and the propagation extend additionally considerably reduces when in contrast to the traditional carry Look Ahead adder why because the variety transistors extensively reduces from 1448 (Conventional) to 456 (Proposed CLA). The simulation consequences of the proposed format carried out in Xilinx. Keywords: Delay, power dissipation, voltage, transistor sizing.

scholarly journals Performance Analysis of Adiabatic Vedic Multipliers

2021 ◽  
Vol 12 (5) ◽  
pp. 1429-1435
Author(s):  
Srilakshmi Kaza, Et. al.
Keyword(s):  
Energy Dissipation ◽  
Power Dissipation ◽  
High Performance ◽  
Digital Signal ◽  
Basic Operation ◽  
Smart Systems ◽  
Ic Manufacturing ◽  
Vedic Multiplier ◽  
Technology Nodes ◽  
Important Design

Energy dissipation and reliability are the two important design constraints in the high performance processor design. With the advancements in the IC manufacturing and reduced feature sizes the energy dissipation increases in exponential manner at the lower technology nodes. So, there is a need to design energy-efficient and reliable circuits and systems. The reliability with temperature is also one of the major challenges in today’s smart systems as they are operated in harsh environments. Most of the works till date analyzed the reliability with respect to DC constraints. The basic operation in the high performance Digital Signal Processing (DSP) is the multiplication is used to simplify various operations like convolution, filtering and correlation. In this work, a Vedic multiplier with 4x4 size is implemented with FinFET based energy recovery Modified PFAL (MPFAL) logic at 45 nm technology node. The designed multiplier performance is analyzed and compared with our earlier work in terms of energy dissipation and delay. The results indicate a reduction of 55% in energy dissipation over ECRL based Vedic multiplier. Linear variation of power dissipation with temperature in the order of pW shows that design MPFAL Vedic muliplier is more reliable compared to CMOS multiplier.

Thermal Issues in Next Generation Integrated Circuits

2003 ◽  
Author(s):  
Siva Gurrum ◽  
Shivesh Suman ◽  
Yogendra Joshi ◽  
Andrei Fedorov
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Power Dissipation ◽  
High Performance ◽  
Electronic Devices ◽  
Heat Removal ◽  
Current Generation ◽  
Fundamental Limits ◽  
Convection Boundary ◽  
And Performance

Effective cooling of electronic chips is crucial for reliability and performance of electronic devices. Steadily increasing power dissipation in both devices and interconnects motivate the investigation of chip-centric thermal management as opposed to traditional package-centric solutions. In this work, we explore the fundamental limits for heat removal from a model chip for various configurations. Temperature rise when the chip is embedded in an infinite solid is computed for different thermal conductivities of the medium to pin down the best that can be achieved with conduction based thermal management. Next, a chip attached to a spreader plate with convection boundary condition on top was considered. A brief review of interface thermal resistances and partitioning of overall thermal resistance is presented for current generation microprocessors. Based upon the analysis it is concluded that far-term cooling solutions might necessitate integration with chip/interconnect-stack to meet the challenges. In addition, this would require concurrent thermal and electrical design/fabrication of future high-performance microprocessors.

Power Analysis Approach for NoC-based Homogeneous Stacked 3D ICs

2017 ◽  
Vol 27 (02) ◽  
pp. 1850034 ◽  
Author(s):  
Yaseer Arafat Durrani
Keyword(s):  
Integrated Circuits ◽  
Power Dissipation ◽  
High Performance ◽  
Average Power ◽  
Power Estimation ◽  
Maximum Error ◽  
Power Modeling ◽  
Ic Design ◽  
3D Ic ◽  
Average Maximum

Low-power consumption in three-dimensional integrated circuits (3D IC) design is becoming an important concern that cannot be neglected. The multiple layers/dies are stacked in 3D IC and communicate with each other through-silicon-vias (TSVs) to work as a single device in order to achieve high performance with minimum power dissipation. This paper demonstrates high-level power modeling approach for the power estimation of homogenous integration of Network-on-Chip (NoC)-based mesh architecture in 3D IC design. The preliminary experimental work of power model is divided into two major parts of the design. The first part estimates the power of NoC architecture on each stack separately and the second estimates the power dissipation of the uniformly distributed TSVs and input/output (I/O) pads. The model uses a linear function to estimate the average power dissipation. For an entire IC design, the average power is extracted by simple addition of all power estimation results of the model. The design is operated with multiple frequencies to find the most appropriate frequency to minimize power dissipation. In experiments, the average maximum error is estimated 18.03%.

Benchmarking Study on the Thermal Management Landscape for Three-Dimensional Integrated Circuits: From Back-Side to Volumetric Heat Removal

2016 ◽  
Vol 138 (1) ◽  
Author(s):  
Thomas Brunschwiler ◽  
Arvind Sridhar ◽  
Chin Lee Ong ◽  
Gerd Schlottig
Keyword(s):  
Integrated Circuits ◽  
Thermal Management ◽  
Integrated Circuit ◽  
Power Dissipation ◽  
High Performance ◽  
Heat Dissipation ◽  
Hybrid Approach ◽  
Three Dimensional ◽  
Heat Removal ◽  
Back Side

An overview of the thermal management landscape with focus on heat dissipation from three-dimensional (3D) chip stacks is provided in this study. Evolutionary and revolutionary topologies, such as single-side, dual-side, and finally, volumetric heat removal, are benchmarked with respect to a high-performance three-tier chip stack with an aggregate power dissipation of 672 W. The thermal budget of 50 K can be maintained by three topologies, namely: (1) dual-side cooling, implemented by a thermally active interposer, (2) interlayer cooling with four-port fluid delivery and drainage at 100 kPa pressure drop, and (3) a hybrid approach combining interlayer with embedded back-side cooling. Of all the heat-removal concepts, interlayer cooling is the only approach that scales with the number of dies in the chip stack and hence enables extreme 3D integration. However, the required size of the microchannels competes with the requirement of low through-silicon-via (TSV) heights and pitches. A scaling study was performed to derive the TSV pitch that is compatible with cooling channels to dissipate 150 W/cm2 per tier. An active integrated circuit (IC) area of 4 cm2 was considered, which had to be implemented on the varying tier count in the stack. A cuboid form factor of 2 mm × 4 mm × 2.55 mm results from a die count of 50. The resulting microchannels of 2 mm length allow small hydraulic diameters and thus a very high TSV density of 1837 1/mm2. The accumulated heat flux and the volumetric power dissipation are as high as 7.5 kW/cm2 and 29 kW/cm3, respectively.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

Low-Dielectric-Constant Materials for ULSI Interlayer-Dielectric Applications

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 19-27 ◽  
Author(s):  
Wei William Lee ◽  
Paul S. Ho
Keyword(s):  
Packing Density ◽  
Propagation Delay ◽  
Single Chip ◽  
Crosstalk Noise ◽  
Metal Line ◽  
Total Delay ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Interconnect Delay ◽  
Interconnect Technology

Continuing improvement of microprocessor performance historically involves a decrease in the device size. This allows greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However higher packing density requires a much larger increase in the number of interconnects. This has led to an increase in the number of wiring levels and a reduction in the wiring pitch (sum of the metal line width and the spacing between the metal lines) to increase the wiring density. The problem with this approach is that—as device dimensions shrink to less than 0.25 μm (transistor gate length)—propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. The smaller line dimensions increase the resistivity (R) of the metal lines, and the narrower interline spacing increases the capacitance (C) between the lines. Thus although the speed of the device will increase as the feature size decreases, the interconnect delay becomes the major fraction of the total delay and limits improvement in device performance.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILD) as well as alternative architectures have been proposed to replace the current Al(Cu) and SiO2 interconnect technology.

Performance Analysis of Various Multipliers Using 8T-full Adder with 180nm Technology

2020 ◽  
Vol 13 (6) ◽  
pp. 864-870
Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Fundamental Operation ◽  
Wallace Tree ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Wallace Tree Multiplier

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.

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