Precise Transient Mechanism of Steep Subthreshold Slope PN-Body-Tied SOI-FET and Proposal of a New Structure for Reducing Leakage Current upon Turn-off

In this paper the strain effects on the performance and reliability of future digital III-V device are discussed. Strain is incorporated in the device during fabrication, packaging, and operation. A high amount of strain can introduce defects and cracks in the epilayer. The band structure of the active device region is also altered due to strain. These strain induced changes determine performance, reliability, and lifetime of the device. Therefore, it is necessary to consider strain effects while designing a device for a particular application. Here, compressive-strain-induced changes are used as design parameters and their impact on the logic performance of the device is studied. It is interpreted that the design significantly decreases the gate leakage current and improves the subthreshold slope.

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Super Steep Subthreshold Slope “PN-Body-Tied SOI-FET” for Ultralow Power IoT Edge Systems and RF Energy Harvesting

2019 3rd International Conference on Recent Advances in Signal Processing, Telecommunications & Computing (SigTelCom) ◽

10.1109/sigtelcom.2019.8696203 ◽

2019 ◽

Author(s):

Jiro Ida ◽

Takayuki Mori ◽

Shun Momose

Keyword(s):

Energy Harvesting ◽

Subthreshold Slope ◽

Rf Energy Harvesting ◽

Ultralow Power ◽

Rf Energy ◽

Steep Subthreshold Slope

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Fabrication of a three-terminal graphene nanoelectromechanical switch using two-dimensional materials

Nanoscale ◽

10.1039/c7nr08439k ◽

2018 ◽

Vol 10 (26) ◽

pp. 12349-12355 ◽

Cited By ~ 8

Author(s):

Ngoc Huynh Van ◽

Manoharan Muruganathan ◽

Jothiramalingam Kulothungan ◽

Hiroshi Mizuta

Keyword(s):

Leakage Current ◽

2D Materials ◽

Two Dimensional ◽

Subthreshold Slope ◽

Drive Current ◽

Exponential Increase ◽

Two Dimensional Materials

An all-2D materials three-terminal subthermal subthreshold slope nanoelectromechanical (NEM) switch is realized to overcome the exponential increase in leakage current with an increase in the drive current of CMOS devices.

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Ultrasensitive negative capacitance phototransistors

Nature Communications ◽

10.1038/s41467-019-13769-z ◽

2020 ◽

Vol 11 (1) ◽

Cited By ~ 17

Author(s):

Luqi Tu ◽

Rongrong Cao ◽

Xudong Wang ◽

Yan Chen ◽

Shuaiqin Wu ◽

...

Keyword(s):

Room Temperature ◽

Gate Dielectric ◽

Negative Capacitance ◽

Subthreshold Slope ◽

Electrical And Optical Properties ◽

Promising Candidate ◽

Combined Action ◽

Zirconium Oxide Film ◽

Dark Currents ◽

Steep Subthreshold Slope

AbstractSensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused on complex hybrid systems in which leakage paths and dark currents inevitably increase, thereby reducing the photodetectivity. Here, we report an ultrasensitive negative capacitance (NC) MoS2 phototransistor with a layer of ferroelectric hafnium zirconium oxide film in the gate dielectric stack. The prototype photodetectors demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and ultrahigh photodetectivity of 4.75 × 1014 cm Hz1/2 W−1 at room temperature. The enhanced performance benefits from the combined action of the strong photogating effect induced by ferroelectric local electrostatic field and the voltage amplification based on ferroelectric NC effect. These results address the key challenges for MoS2 photodetectors and offer inspiration for the development of other optoelectronic devices.

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