Helium plasma modification of Si and Si3N4 thin films for advanced etch processes

AbstractRapid progress in thin-film coatings based on metals, which can be deposited on polymers, has been recently observed. In this work discussion on the properties of modified polymers and silver thin films deposited on polytetrafluoroethylene (PTFE) and polycarbonate (PC) substrates has been presented. Surface of these polymer substrates were exposed to argon plasma discharge. Additionally, silver thin films were deposited on their surface by electron beam evaporation method. The surfaces of the modified polymers were studied by different methods, i.e. topography, wettability and scratch resistance measurements were performed. The ageing effect of treated substrates was also discussed. It was shown that plasma modification of PTFE and PC substrates increased wettability of their surfaces. The value of water contact angle decreased of about 40 % and 25 % for PTFE and PC surface, respectively. The change of hydrophobic to hydrophilic properties was observed. Plasma modification of substrates improved adhesion between silver coating and polymer substrates. However, it did not influence wettability of Ag coating.

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Preparation of High-Transparency, Superhydrophilic Visible Photo-Induced Photocatalytic Film via a Rapid Plasma-Modification Process

Coatings ◽

10.3390/coatings11070784 ◽

2021 ◽

Vol 11 (7) ◽

pp. 784

Author(s):

Bing-Jyh Lu ◽

Keng-Ta Lin ◽

Yi-Ming Kuo ◽

Cheng-Hsien Tsai

Keyword(s):

Thin Films ◽

Visible Light ◽

Light Irradiation ◽

Light Transmittance ◽

Plasma Modification ◽

Pencil Hardness ◽

Doped Tio2 ◽

Sio2 Films ◽

Plasma Nitridation ◽

Nitridation Process

In this study, different amounts of SiO2 nanoparticles (7 nm) were added to simultaneously reach high transmittance, high hardness, and high adhesion for TiO2 film prepared by the sol–gel method and coated on glass through a dip-coating technique. For the film to achieve self-cleaning, anti-fogging, superhydrophilicity, and visible photo-induced photocatalysis, TiO2-SiO2 film was modified via a rapid microwave plasma-nitridation process for efficient N-doping by various N2-containing gases (N2, N2/Ar/O2, N2/Ar). Through nitrogen plasma, the content of N atom reached 1.3% with the ratio of O/Ti atom being 2.04. The surface of the thin films was smooth, homogeneous, and did not crack, demonstrated by the root mean square (RMS) roughness of film surface being 3.29–3.94 nm. In addition, the films were composed of nanoparticles smaller than 10 nm, with a thickness of about 100 nm, as well as the crystal phase of the thin film being anatase. After the plasma-nitridation process, the visible-light transmittance of N-doped TiO2-SiO2 films was 89.7% (clean glass = 90.1%). Moreover, the anti-fogging ability was excellent (contact angle < 5°) even without light irradiation. The degradation of methylene blue showed that the photocatalytic performance of N-doped TiO2-SiO2 films was apparently superior to that of unmodified films under visible-light irradiation. Moreover, the pencil hardness and adhesion rating test of the thin films were 7H and 5B, respectively, indicating that the obtained coatings had great mechanical stability.

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The study of interfacial reactions of nickel thin films on GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074616 ◽

1983 ◽

Vol 41 ◽

pp. 156-157

Author(s):

L.J. Chen ◽

Y.F. Hsieh

Keyword(s):

Thin Films ◽

Integrated Circuits ◽

Interfacial Reactions ◽

Metal Contacts ◽

Nickel Thin Films ◽

Thin Foils ◽

The Status ◽

Si Doped ◽

Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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Studies on Water in the Hydration Chamber of a Modified Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069715 ◽

1970 ◽

Vol 28 ◽

pp. 544-545

Author(s):

R. C. Moretz ◽

G. G. Hausner ◽

D. F. Parsons

Keyword(s):

Thin Film ◽

Thin Films ◽

Electron Microscope ◽

Steady State ◽

Room Temperature ◽

Small Mass ◽

Equilibrium Pressure ◽

Biological Objects ◽

Mechanical Pump ◽

Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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Nucleation and Early Growth of Sputtered thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069570 ◽

1970 ◽

Vol 28 ◽

pp. 516-517

Author(s):

Dudley M. Sherman ◽

Thos. E. Hutchinson

Keyword(s):

Thin Films ◽

Electron Beam ◽

Ion Beam ◽

Ion Source ◽

Water Cooling ◽

Stages Of Growth ◽

Lens Assembly ◽

Microscope Technique ◽

Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100076639 ◽

1983 ◽

Vol 41 ◽

pp. 606-607

Author(s):

Klaus-Ruediger Peters ◽

Samuel A. Green

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Critical Point ◽

Metal Films ◽

High Magnification ◽

Osmium Impregnation ◽

Instrumental Resolution ◽

20 Nm ◽

Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

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The Precipitation of Si in AlCuSi Thin Films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100070618 ◽

1973 ◽

Vol 31 ◽

pp. 34-35 ◽

Cited By ~ 1

Author(s):

R. M. Anderson

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Heat Treatment ◽

Solid Solution ◽

Integrated Circuit ◽

Copper Film ◽

Solution Concentration ◽

X Ray ◽

Silicon Thin Films ◽

Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

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