scholarly journals Effect of depth etching on Bragg reflectors realized by focused ion beam in Ti:LiNbO 3 waveguide

2009 ◽  
Author(s):  
K. Ghoumid ◽  
R. Ferriere ◽  
B.-E. Benkelfat ◽  
G. Ulliac ◽  
R. Salut ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Bragg Reflectors

scholarly journals Comparison of Measurement and Electromagnetic Overall Transfer Matrix Simulation Results of MgF 2 -Nb 2 O 5 Distributed Bragg Reflectors with Different Layers

2021 ◽  
Author(s):  
Hsien-Wei Tseng ◽  
Bo-Syuan. Chen ◽  
You-Lin Wu ◽  
Jing-Jenn Lin ◽  
Cheng-Fu Yang
Keyword(s):  
Transfer Matrix ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Layer ◽  
Approximate Equation ◽  
Bilayer Film ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Glass Substrates ◽  
Bilayer Films

Abstract In this study, glasses were used as substrates and an e-beam was used the method to deposit MgF2 and Nb2O5 single-layer films, and the optical properties, including extinction coefficients (k values) and refractive indices (n values), were measured by using the light wavelength as variable. The equation d = λ/(4n) was used to calculate the thickness (d) of 1/4 wavelength (λ) for each layer of the MgF2-Nb2O5 bilayer films in distributed Bragg reflectors (DBRs) with a designed reflective wavelength at blue light (~450nm). Each MgF2-Nb2O5 bilayer film was called a period, and the glass substrates were used to deposit the films with two, four, and six periods for fabricating the DBRs. The field emission scanning electron microscope equipped with a focused ion beam was used to measure the thickness of each MgF2-Nb2O5 layer in the DBRs with different periods. The measured maximum reflective ratios were compared with Sheppard’s approximate equation, which calculates only the maximum reflective ratio at a specific wavelength. An overall transfer matrix was investigated to calculate the reflective spectra by incorporating the variable n values and thicknesses of the MgF2-Nb2O5 films in each layer. We show that the measured results of the fabricated DBRs matched the results simulated using Sheppard’s approximate equation and the overall transfer matrix.

scholarly journals Wavelength-Selective Ti:LiNbO$_{3}$ Multiple Y-Branch Coupler Based on Focused Ion Beam Milled Bragg Reflectors

2011 ◽  
Vol 29 (23) ◽  
pp. 3536-3541 ◽  
Author(s):  
Kamal Ghoumid ◽  
Badr-Eddine Benkelfat ◽  
Richard Ferriere ◽  
Gwenn Ulliac ◽  
Tijani Gharbi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Bragg Reflectors

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Novel Approach of Improving Secondary Electron Detector in FIB System

2018 ◽  
Author(s):  
Steve Wang ◽  
Jim McGinn ◽  
Peter Tvarozek ◽  
Amir Weiss
Keyword(s):  
Integrated Circuit ◽  
Secondary Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Vital Role ◽  
Electron Detector ◽  
System A ◽  
Novel Approach

Abstract Secondary electron detector (SED) plays a vital role in a focused ion beam (FIB) system. A successful circuit edit requires a good effective detector. Novel approach is presented in this paper to improve the performance of such a detector, making circuit altering for the most advanced integrated circuit (IC) possible.

Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

2009 ◽  
Author(s):  
E. Hendarto ◽  
S.L. Toh ◽  
J. Sudijono ◽  
P.K. Tan ◽  
H. Tan ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Nickel Silicide ◽  
Fault Isolation ◽  
Technology Nodes ◽  
Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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