GROWTH OF AgInSe2 ON Si(100) SUBSTRATE BY PULSE LASER ABLATION

2009 ◽  
Vol 16 (06) ◽  
pp. 917-923 ◽  
Author(s):  
DINESH PATHAK ◽  
R. K. BEDI ◽  
DAVINDER KAUR
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Optical Studies ◽  
High Quality ◽  
X Ray ◽  
Different Temperatures

Laser ablation has attracted special interest for the growth of thin films. It allows the formation of high quality layers and maintain stoichiometry in the films of even very complex elemental materials. In this work, high quality AgInSe 2 (AIS) films were grown onto Si (100) substrates kept at different temperatures using ultra high vacuum pulsed laser deposition (PLD) technique from the AIS target synthesized from high-purity materials. It has been observed that compositional stoichiometry is largely maintained in the films. This suggests that PLD could be used as technique for fabrication of ternary semi-conducting films. The X-ray diffraction studies of the films show that films are textured in (112) direction. The structural and optical properties have been investigated as a function of substrate temperature. An increase in substrate temperature results in a more ordered structure. Roughness of the films is found to increase at higher deposition temperatures. The optical studies of the films show that the optical band gap lies in the range 1.20–1.27 eV.

CRYSTALLINE AgInSe2 FILMS ON GLASS BY LASER ABLATION

2010 ◽  
Vol 24 (27) ◽  
pp. 5379-5385 ◽  
Author(s):  
DINESH PATHAK ◽  
R. K. BEDI ◽  
AJAY KAUSHAL ◽  
DAVINDER KAUR
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
High Vacuum ◽  
Compositional Analysis ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Glass Substrates ◽  
Complex Element ◽  
Formation Technique

Laser ablation has attracted special interest for the formation of thin films compared with other formation technique. A distinctive feature of laser ablation is that it allows high quality and stoichiometry of films of even very complex element material. In this presentation, laser ablation of AgInSe 2 chalcopyrite semiconductor will be discussed in which it is difficult to maintain stoichiometry by conventional method. High Quality AgInSe 2 (AIS) films were grown on Glass substrates by the ultra-high-vacuum pulsed laser deposition technique from the AIS target synthesized from high-purity materials. The X-ray diffraction studies of the films show that films are textured in (112) direction. The substrate temperature appears to influence the properties of films. Increase in substrate temperature results in a more ordered structure. Compositional analysis has been carried out by EDAX. It is observed that compositional stoichiometry is maintained to a greater extent by PLD technique than other traditional methods like thermal evaporation. The optical studies of the films show that the optical band gap is about 1.20 eV.

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

1998 ◽  
Vol 533 ◽  
Author(s):  
P. M. Mooney ◽  
J. O. Chu ◽  
J. A. Ott ◽  
J. L. Jordan-Sweet ◽  
B. S. Meyerson ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Wafer Cleaning ◽  
Device Structures

AbstractSi/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

HIGH-QUALITY Tl2Ba2Ca2Cu3O10 THIN FILMS FABRICATED VIA LASER ABLATION

1993 ◽  
Vol 07 (01) ◽  
pp. 19-23 ◽  
Author(s):  
W. A. LUO ◽  
Y. Q. TANG ◽  
Y. Z. CHEN ◽  
I. N. CHAN ◽  
K. Y. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Critical Current Density ◽  
Current Density ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
High Quality ◽  
Step Process ◽  
X Ray ◽  
Zero Resistance

In this letter, we describe results obtained via laser ablation to fabricate Tl 2 Ba 2 Ca 2 Cu 3- O 10 superconducting thin films using a two-step process. We found that the zero-resistance temperatures are up to 121 K, while the onset temperatures are up to 125 K. The T c and J c are mainly determined by a non-contact new technique for high-T c films. The typical critical current density, J c , is about 106 A/cm 2 at 77 K. X-ray diffraction showed that the superconducting thin films are nearly single 2223 phase and are highly oriented.

High Resolution X-Ray Diffraction Analysis of Piezoelectric LiNbO3 Films.

1995 ◽  
Vol 401 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Naohiro Kuze ◽  
Masahiro Matsui ◽  
Masaki Kanal ◽  
Tomoji Kawai
Keyword(s):  
Laser Ablation ◽  
High Resolution ◽  
The Other ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates

AbstractThin LINbO3 films are deposited on (001) sapphire and (001) LiTaO3 substrates by using pulsed excimer-laser ablation. These films are evaluated by high-resolution X-ray diffraction (HRXRD) analysis. Strained LiNbO3 films in which the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals are deposited on the sapphire substrates. On the other hand, extremely high-quality LiNbO3 films in which the a-axis of the films is the same as that of substrates are grown on the LiTaO substrates. X-ray rocking curves for the (006) reflection showed very narrow full width at half maximum (FWHM) of 208 arcsec for the films on the sapphire substrates, and 9 arcsec for the films on LiTaO3 substrates.

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

2021 ◽  
Vol 2 (4) ◽  
pp. 482-494
Author(s):  
Jignesh Vanjaria ◽  
Venkat Hariharan ◽  
Arul Chakkaravarthi Arjunan ◽  
Yanze Wu ◽  
Gary S. Tompa ◽  
...  
Keyword(s):  
Film Growth ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Single Step ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
High Quality ◽  
X Ray

Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.

Liquid Crystalline Behavior of Mixture of Two Non-Mesogenic Compounds

2010 ◽  
Vol 428-429 ◽  
pp. 292-296
Author(s):  
J. Mahadeva ◽  
Nagappa
Keyword(s):  
Liquid Crystalline ◽  
Interfacial Area ◽  
Ammonium Bromide ◽  
Polar Group ◽  
X Ray Diffraction ◽  
Optical Studies ◽  
X Ray ◽  
Molecular Length ◽  
Different Temperatures ◽  
The Stability

The lyotropic liquid crystalline behavior of N-Cetyl-N, N, N, Trimethyl Ammonium Bromide (CTAB) with ethylene glycol (EG) has been investigated. These compounds are non-mesogenic in nature and exhibits Sm A, Sm B and Sm G phases. The stability of the phases is investigated using X-ray diffraction and optical studies. The layer thickness and molecular length are calculated using Bragg’s equation. The interfacial area per polar group and average thickness of hydrocarbon layers are estimated for different concentrations of the mixtures at different temperatures.

Structural and Optical Properties of ZnO Film Precursors for Multilayered Transparent Solar Cell Electrodes

2015 ◽  
Vol 1132 ◽  
pp. 217-223
Author(s):  
E.R. Rwenyagila ◽  
B. Agyei-Tuffour ◽  
M.G.Z. Kana ◽  
O. Akin-Ojo ◽  
W.O. Soboyejo
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Deposition Power ◽  
Different Temperatures

This work examines the modification of the structural and optical properties of ZnO thin films by control of deposition and post-treatment parameters. ZnO thin films were deposited by RF magnetron sputtering from a ceramic target locally made at SHESTCO in Abuja, Nigeria. X-ray diffraction measurements characterized the different films prior to thermal annealing as extremely amorphous with average UV-VIS transmittance spectra between 80 and 90%. Annealing at different temperatures and time spans influenced the formation of Wurtzite (002) oriented ZnO crystallites. Contrary to the crystallinity of the films, which was strongly influenced by the deposition power, the optical transmission of the films was only slightly influenced by the deposition power and it was less sensitive to the crystallinity of ZnO thin films.

Thermodynamically Stable Conducting Films of Intermetallic PtGa2 on Gallium Arsenide

1988 ◽  
Vol 144 ◽  
Author(s):  
Larry P. Sadwick ◽  
Kang L. Wang ◽  
David K. Shuh ◽  
Young K. Kim ◽  
R. Stanley Williams
Keyword(s):  
Gallium Arsenide ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates ◽  
Suitable Temperature

ABSTRACTThe first epitaxial platinum gallium two (PtGa2) films have been grown on gallium arsenide (GaAs) (100) by co-evaporation of the elements under ultra-high vacuum conditions. An electron beam evaporator and a Knudsen cell were used to produce the platinum and gallium beams, respectively. The resulting films and bulk PtGa2 have been characterized by x-ray diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy. The data confirm the PtGa2 stoichiometry and crystal structure of the films, and demonstrate their chemical stability on GaAs (100). This study supports the contention that PtGa2 can be a suitable, temperature stable contact material on GaAs substrates.

Growth and Morphology of Pentacene Films on Oxide Surfaces

2001 ◽  
Vol 708 ◽  
Author(s):  
Ricardo Ruiz ◽  
Leonard C. Feldman ◽  
Richard F. Haglund ◽  
Rodney A. McKee ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Molecule ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Mode Analysis ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Different Temperatures ◽  
High Dielectric

ABSTRACTPentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: a first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the thin film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.

Sign in / Sign up

Export Citation Format

Share Document