High Temperature Organic Electronics

MRS Advances ◽  
2020 ◽  
Vol 5 (10) ◽  
pp. 505-513
Author(s):  
Aristide Gumyusenge ◽  
Jianguo Mei
Keyword(s):  
High Temperature ◽  
Organic Semiconductors ◽  
Organic Electronics ◽  
Elevated Temperatures ◽  
Molecular Design ◽  
State Of The Art ◽  
Stable Operation ◽  
High Temperature Electronics ◽  
New Class ◽  
Review Current

ABSTRACTThe emerging breakthroughs in space exploration, smart textiles, and novel automobile designs have increased technological demand for high temperature electronics. In this snapshot review we first discuss the fundamental challenges in achieving electronic operation at elevated temperatures, briefly review current efforts in finding materials that can sustain extreme heat, and then highlight the emergence of organic semiconductors as a new class of materials with potential for high temperature electronics applications. Through an overview of the state-of-the art materials designs and processing methods, we will layout molecular design principles and fabrication strategies towards achieving thermally stable operation in organic electronics.

Molecular Tetrominoes: Selective Masking of Donor pi-face to Control Configuration of Donor-Acceptor Complex

2021 ◽  
Author(s):  
Jenna L Sartucci ◽  
Arindam Maity ◽  
Manikandan Mohanan ◽  
Jeffery A. Bertke ◽  
Miklos Kertesz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Electronics ◽  
Molecular Design ◽  
Design Rules ◽  
Acceptor Complex ◽  
Donor Acceptor ◽  
Doping Mechanism ◽  
Control Configuration

Understanding the doping mechanism in organic semiconductors and generating molecular design rules to control the doping process is crucial to improve the performance of organic electronics. Even though controlling the...

Advanced Applications of High Temperature Magnetics

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000046-000055
Author(s):  
John R. Fraley ◽  
Edgar Cilio ◽  
Bryon Western
Keyword(s):  
High Temperature ◽  
Elevated Temperatures ◽  
Electronic Systems ◽  
Theoretical Understanding ◽  
Magnetic Systems ◽  
Magnetic Structures ◽  
High Temperature Electronics ◽  
Systems Research ◽  
Wide Range ◽  
Active Engine

In recent years, high temperature magnetic structures have been developed and used for inductors and transformers in high temperature applications ranging from power electronics to wireless telemetry systems. Research in the high temperature magnetics field has led to the development of more advanced magnetic structures that can enable diverse applications ranging from regulators to amplifiers, with far reaching implications for the high temperature electronics community. Current high temperature electronics have shown potential in lab and rig tests, but high temperature electronics systems suffer from the relatively limited lifetime of the semiconductor devices themselves. The advanced magnetics discussed in this paper can be designed to have extreme lifetime capabilities even at elevated temperatures, and as such can have an immediate impact on the implementation of true field deployable high temperature electronic systems. Aerospace, power generation, and automotive industries may especially benefit from this technology, as significant advances in health monitoring and active engine control will be enabled by these advanced magnetic structures. A theoretical understanding of these advanced magnetic structures is necessary for initial design and feasibility, while the true development and implementation of this technology depends on state of the art high temperature packaging approaches. By combining high temperature, grain-oriented magnetic materials along with high temperature packaging processes, APEI, Inc. has created advanced high temperature magnetic systems that indicate the technology described in this paper is a viable one, with applications across a wide range of high temperature electronics systems.

Influence of High-Temperature Bias Stress on Room-Temperature VT Drift Measurements in SiC Power MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 757-762
Author(s):  
Daniel B. Habersat ◽  
Aivars Lelis ◽  
Ronald Green
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
State Of The Art ◽  
Charge Trapping ◽  
High Temperature Stress ◽  
Test Method ◽  
Power Mosfets ◽  
Temperature Bias ◽  
Bias Stress

Our results reinforce the notion of the need for an improved high-temperature gate bias (HTGB) test method — one which discourages the use of slow (greater than ~1 ms) threshold-voltage (VT) measurements at elevated temperatures and includes biased cool-down if room temperature measurements are performed, to ensure that any ephemeral effects during the high-temperature stress are observed. The paper presents a series of results on both state-of-the-art commercially-available devices as well as older vintage devices that exhibit enhanced charge-trapping effects. Although modern devices appear to be robust, it is important to ensure that any new devices released commercially, especially by new vendors, are properly evaluated for VT stability.

scholarly journals Semiconducting polymer blends that exhibit stable charge transport at high temperatures

Science ◽  
2018 ◽  
Vol 362 (6419) ◽  
pp. 1131-1134 ◽  
Author(s):  
Aristide Gumyusenge ◽  
Dung T. Tran ◽  
Xuyi Luo ◽  
Gregory M. Pitch ◽  
Yan Zhao ◽  
...  
Keyword(s):  
High Temperature ◽  
Polymer Blends ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Hole Mobility ◽  
General Strategy ◽  
Semiconducting Polymer ◽  
High Temperature Operation

Although high-temperature operation (i.e., beyond 150°C) is of great interest for many electronics applications, achieving stable carrier mobilities for organic semiconductors at elevated temperatures is fundamentally challenging. We report a general strategy to make thermally stable high-temperature semiconducting polymer blends, composed of interpenetrating semicrystalline conjugated polymers and high glass-transition temperature insulating matrices. When properly engineered, such polymer blends display a temperature-insensitive charge transport behavior with hole mobility exceeding 2.0 cm2/V·s across a wide temperature range from room temperature up to 220°C in thin-film transistors.

Considerations for Sintering in High Temperature Electronics

2019 ◽  
Vol 2019 (HiTen) ◽  
pp. 000071-000073
Author(s):  
Thomas Krebs
Keyword(s):  
High Temperature ◽  
Elevated Temperatures ◽  
High Reliability ◽  
Extreme Environments ◽  
Hydraulic Systems ◽  
Mechatronic Systems ◽  
Clear Trend ◽  
High Temperature Electronics ◽  
Wide Range ◽  
Bonding Wires

Abstract High temperature electronics are used in a wide range of applications especially in extreme environments. There is a clear trend in aircrafts to have electrical controls mounted closer to the engine [1]. In cars more and more mechanical and hydraulic systems are replaced by electromechanical or mechatronic systems [2]. They are getting closer to high temperature environments like the engine or brakes. To its nature, avionic and automotive applications require predictable, highly reliable systems. Because elevated temperatures will increase the speed of material aging, the combination of high operation temperatures and high reliability is quite challenging. This applies in particular to interconnect materials such as solders or bonding wires.

The European SEEL (Solutions for energy efficient lighting) project: High temperature electronics for LED-lighting architectures

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000193-000206
Author(s):  
S. Habenicht ◽  
H.J. Funke ◽  
D. Gruber ◽  
D. Oelgeschläger ◽  
O. Schumacher ◽  
...  
Keyword(s):  
High Temperature ◽  
Elevated Temperatures ◽  
Temperature Treatment ◽  
Current Status ◽  
High Temperature Treatment ◽  
Mechanical Degradation ◽  
Led Driver ◽  
High Temperature Electronics ◽  
Architecture Evaluation ◽  
High Efficient

Due to superior properties in energy-efficiency and design freedom, the “liberation of light” by LED-technology will draw more attention in future applications. Within the European SEEL project, the partners are performing research in enabling technologies for high-temperature electronics (up to 185°C) to be designed into the next generation of high-efficient LED-driver circuits. This requires high-temperature evaluation of the product architecture of electronic components, i.e. the 1st-level interconnection, i.e. the chip metallization and the chip bonding technology. Different methods such as Au- and Cu-wirebonding as well as soft-soldering technologies are evaluated and discussed. The material properties, i.e. the encapsulating mound compound and the die adhesives play an important role as these materials tend to degrade at elevated temperatures. On top of that, also the board mounting architecture of the products, i.e. the board materials and the interconnection techniques such as high-temperature soldering play an important role and have to be discussed during the architecture evaluation, as solder joints and board materials are prominent candidates for mechanical degradation during high-temperature treatment. Thermal aspects in the circuit design in order to prevent part of the system architecture from overheating during operation, play an important role in the system design. The current status of the project as well as the future exploitation outlook will be presented.

Novel Piezoelectric Polyimides

1995 ◽  
Vol 413 ◽  
Author(s):  
Joycelyn O. Simpson ◽  
Sharon S. Welch ◽  
Terry L. St.Clair
Keyword(s):  
High Performance ◽  
Elevated Temperatures ◽  
Piezoelectric Properties ◽  
Molecular Design ◽  
State Of The Art ◽  
Piezoelectric Sensor ◽  
Sensor Response ◽  
Piezoelectric Polymers ◽  
The Relationship

ABSTRACTThis research focuses on the synthesis, processing, and characterization of novel high performance piezoelectric polymers. A series of polyimides containing pendant, polar trifluoro (-CF 3) and nitrile (-CN) groups have been synthesized, electroded and poled. Measurements of the piezoelectric sensor response are presented to demonstrate the relationship between dipole concentration and the level of piezoelectricity for these materials. An understanding of the effect of dipole concentration on piezoelectric properties will enable the molecular design of polymers possessing distinct improvements over state of the art piezoelectric polymers including enhanced polarizability, polarization stability at elevated temperatures, and increased mechanical integrity.

High-Temperature Instability of A Cr2Nb-Nb(Cr) Microlaminate Composite

1996 ◽  
Vol 54 ◽  
pp. 374-375
Author(s):  
M. Larsen ◽  
R.G. Rowe ◽  
D.W. Skelly
Keyword(s):  
Heat Treatment ◽  
Solid Solution ◽  
High Temperature ◽  
Elevated Temperatures ◽  
Aircraft Engine ◽  
Lattice Parameter ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Cross Sectional ◽  
Bcc Structure

Microlaminate composites consisting of alternating layers of a high temperature intermetallic compound for elevated temperature strength and a ductile refractory metal for toughening may have uses in aircraft engine turbines. Microstructural stability at elevated temperatures is a crucial requirement for these composites. A microlaminate composite consisting of alternating layers of Cr2Nb and Nb(Cr) was produced by vapor phase deposition. The stability of the layers at elevated temperatures was investigated by cross-sectional TEM.The as-deposited composite consists of layers of a Nb(Cr) solid solution with a composition in atomic percent of 91% Nb and 9% Cr. It has a bcc structure with highly elongated grains. Alternating with this Nb(Cr) layer is the Cr2Nb layer. However, this layer has deposited as a fine grain Cr(Nb) solid solution with a metastable bcc structure and a lattice parameter about half way between that of pure Nb and pure Cr. The atomic composition of this layer is 60% Cr and 40% Nb. The interface between the layers in the as-deposited condition appears very flat (figure 1). After a two hour, 1200 °C heat treatment, the metastable Cr(Nb) layer transforms to the Cr2Nb phase with the C15 cubic structure. Grain coarsening occurs in the Nb(Cr) layer and the interface between the layers roughen. The roughening of the interface is a prelude to an instability of the interface at higher heat treatment temperatures with perturbations of the Cr2Nb grains penetrating into the Nb(Cr) layer.

Phase transformation and layer evolution in molybdenum disilicide-silicon carbide nanolayered coatings

1994 ◽  
Vol 52 ◽  
pp. 538-539
Author(s):  
H. Kung ◽  
T. R. Jervis ◽  
J.-P. Hirvonen ◽  
M. Nastasi ◽  
T. E. Mitchell ◽  
...  
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Oxidation Resistance ◽  
Elevated Temperatures ◽  
Matrix Material ◽  
Molybdenum Disilicide ◽  
High Temperature Strength ◽  
Cross Sectional ◽  
Good Oxidation Resistance ◽  
Structural Applications

MoSi2 is a potential matrix material for high temperature structural composites due to its high melting temperature and good oxidation resistance at elevated temperatures. The two major drawbacksfor structural applications are inadequate high temperature strength and poor low temperature ductility. The search for appropriate composite additions has been the focus of extensive investigations in recent years. The addition of SiC in a nanolayered configuration was shown to exhibit superior oxidation resistance and significant hardness increase through annealing at 500°C. One potential application of MoSi2- SiC multilayers is for high temperature coatings, where structural stability ofthe layering is of major concern. In this study, we have systematically investigated both the evolution of phases and the stability of layers by varying the heat treating conditions.Alternating layers of MoSi2 and SiC were synthesized by DC-magnetron and rf-diode sputtering respectively. Cross-sectional transmission electron microscopy (XTEM) was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: crystallization and phase transformation of MoSi2, crystallization of SiC, and spheroidization of the layer structures.

Superconducting Wind Generators with Capacities of 10 MW and Larger

2020 ◽  
Vol 10 (10) ◽  
pp. 59-67
Author(s):  
Victor N. ANTIPOV ◽  
◽  
Andrey D. GROZOV ◽  
Anna V. IVANOVA ◽  
◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Wind Power ◽  
State Of The Art ◽  
Superconducting Materials ◽  
Commercial Application ◽  
Synchronous Generators ◽  
High Temperature Superconducting ◽  
Wind Generators ◽  
Main Factor

The overall dimensions and mass of wind power units with capacities larger than 10 MW can be improved and their cost can be decreased by developing and constructing superconducting synchronous generators. The article analyzes foreign conceptual designs of superconducting synchronous generators based on different principles: with the use of high- and low-temperature superconductivity, fully superconducting or only with a superconducting excitation system, and with the use of different materials (MgB2, Bi2223, YBCO). A high cost of superconducting materials is the main factor impeding commercial application of superconducting generators. In view of the state of the art in the technology for manufacturing superconductors and their cost, a conclusion is drawn, according to which a synchronous gearless superconducting wind generator with a capacity of 10 MW with the field winding made of a high-temperature superconducting material (MgB2, Bi-2223 or YBCO) with the «ferromagnetic stator — ferromagnetic rotor» topology, with the stator diameter equal to 7—9 m, and with the number of poles equal to 32—40 has prospects for its practical use in the nearest future.

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