YBa2Cu3O7−δ on MgO films grown by pulsed organometallic beam epitaxy and a grain boundary junction application

1995 ◽  
Vol 10 (11) ◽  
pp. 2700-2707 ◽  
Author(s):  
K.A. Dean ◽  
D.B. Buchholz ◽  
L.D. Marks ◽  
R.P.H. Chang ◽  
B.V. Vuchic ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Weak Link ◽  
Multilayer Films ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
High Quality ◽  
Growth Technique ◽  
X Ray ◽  
Current Voltage ◽  
Multilayer Technology

MgO films and YBa2Cu3O7−δ/MgO multilayer films were developed with the pulsed organometallic beam epitaxy (POMBE) growth technique, and grain boundary junctions were fabricated from the films to demonstrate the utility of the multilayers. High-quality MgO films were grown on LaAlO3 substrates by POMBE using a Mg(dpm)2 precursor. MgO crystallinity, as assessed by x-ray diffraction rocking curves, improved with the use of CuOx or YBa2Cu3O7−δ buffer layers. YBa2Cu3O7−δ films grown on the MgO layer by POMBE exhibited a Tc0 of 83 K and a Jc (12 K) exceeding 106 A/cm2 for applied magnetic fields up to 3 × 104 G. Grain boundary junctions were formed by growing YBa2Cu3O7−δ on MgO films that had been pretreated with a simple sputtering technique. This sputtering induces a controlled, 45°grain boundary in subsequently deposited YBa2Cu3O7−δ films. The resulting boundary showed weak-link current-voltage behavior and an IcRn product of 52 μV at 10 K, demonstrating that sputter-induced grain boundary junctions are compatible with multilayer technology.

scholarly journals Cubic InGaN Grown by MOCVD

1999 ◽  
Vol 4 (S1) ◽  
pp. 239-243
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang
Keyword(s):  
Room Temperature ◽  
Emission Peak ◽  
Buffer Layers ◽  
Cubic Phase ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Cubic Gan ◽  
Pl Emission

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

Optimization of the carbonized buffer layer for the growth of high quality single crystal SiC on Si

2000 ◽  
Vol 640 ◽  
Author(s):  
T. Cloitre ◽  
N. Moreaud ◽  
P. Vicente ◽  
M. Sadowski ◽  
M. Moret ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Buffer Layers ◽  
Layer Surface ◽  
Cold Wall ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Afm Imaging ◽  
Single Crystal Sic ◽  
Very High

ABSTRACTCarbonized buffer layers were formed on Si (100) nominally oriented substrates with propane diluted in palladium purified hydrogen in a cold wall vertical reactor. Subsequent SiC layers were grown using silane and propane at atmospheric pressure. The growth temperature was ranging from 1150°C to 1350°C. The layers obtained were characterized by LT photoluminescence, IR reflectivity, X-ray diffraction, micro-Raman on cleaved edges, AFM imaging, and optical microscopy. Drastic influence on the layer surface morphology was evidenced depending on the transition step between the carbonization and the SiC epitaxial growth. As a result, we have developed a carbonization process leading to very high quality 3CSiC films grown at 1250°C.

Effects of SrAl2O4 Homo-Buffer Layer on SrAl2O4:Eu Phosphors Film Grown on Glass by RF Sputtering

2008 ◽  
Vol 368-372 ◽  
pp. 1358-1361 ◽  
Author(s):  
Xiao Yan Fu ◽  
Hiroshi Yamada ◽  
Chao Nan Xu
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Lattice Mismatch ◽  
Rf Sputtering ◽  
Buffer Layers ◽  
Preparation Technique ◽  
X Ray Diffraction ◽  
High Quality ◽  
Crystalline Film ◽  
X Ray

The influence of pre-deposition of homo-buffer layers on film quality is studied for SrAl2O4:Eu2+ (SAO) crystalline film prepared by RF magnetron method. This preparation technique is necessary to prepare high quality films suitable for the development of SAO devices. Crystallinity and surface morphology were characterized by X-ray diffraction and scanning electron microscopy. After introducing a homo-buffer layer, not only the crystalline but also the surface morphology and adhesion of the film were obviously improved. These results imply that the buffer layer relaxes the strain due to the lattice mismatch between SAO and quartz glass, which improved the crystalline and adhesion of the film.

Low-Temperature Heteroepitaxy of β-SiC on Si (111) Substrates

1988 ◽  
Vol 116 ◽  
Author(s):  
T. Eshita ◽  
T. Suzuki ◽  
T. Hara ◽  
F. Mieno ◽  
Y. Furumura ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Large Area ◽  
Growth Technique ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Structure ◽  
Sic Films

AbstractWe developed a heteroepitaxial growth technique for large-area β-SiC films on Si substrates without buffer layers at 850ºC and 1000ºC. The substrates were vicinal 4-inch (111) Si wafers. The β-SiC films had smooth surfaces and were crack-free. X-ray diffraction and electron diffraction analysis revealed that the films grown at 1000ºC were single crystals. Satisfactory characteristics were obtained in aMOSFET with a β-SiC/Si02/poly-Si substrate structure. Our evaluations indicate that the β-SiC films were high-quality crystals.

High Quality Epitaxial Pt Films Grown on γ-Al2O3/Si (111) Substrates

2007 ◽  
Vol 124-126 ◽  
pp. 181-184
Author(s):  
Mikinori Ito ◽  
Kazuaki Sawada ◽  
Makoto Ishida
Keyword(s):  
Molecular Beam ◽  
Rf Magnetron Sputtering ◽  
High Energy ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pt Films

Epitaxial Pt films were grown on γ-Al2O3/Si (111) substrate by RF-magnetron sputtering. The γ-Al2O3 buffer layers were grown epitaxially using molecular beam epitaxy. The films were characterized by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD) and atomic force microscopy (AFM). The results of XRD showed that high-quality Pt films were obtained at around 560°C. In addition, the Pt films exhibited a very smooth surface with the root-mean-square (rms) surface roughness is about 0.4 nm.

Cubic InGaN Grown by Mocvd

1998 ◽  
Vol 537 ◽  
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang
Keyword(s):  
Room Temperature ◽  
Emission Peak ◽  
Buffer Layers ◽  
Cubic Phase ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Cubic Gan ◽  
Pl Emission

AbstractWe report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

Technology of high quality protein crystals’ obtaining aboard the ISS at execution of joint Japanese–Russian experiments

2020 ◽  
pp. 5-25
Author(s):  
Koji INAKA ◽  
Saori ICHIMIZU ◽  
Izumi YOSHIZAKI ◽  
Kiyohito KIHIRA ◽  
Elena G. LAVRENKO ◽  
...  
Keyword(s):  
Drug Design ◽  
International Space Station ◽  
Space Station ◽  
Protein Crystals ◽  
Diffusion Method ◽  
X Ray Diffraction ◽  
High Quality ◽  
International Space ◽  
X Ray ◽  
High Quality Protein

A series of space experiments aboard the International Space Station (ISS) associated with high-quality Protein Crystal Growth (PCG) in microgravity conditions can be considered as a unique and one of the best examples of fruitful collaboration between Japanese and Russian scientists and engineers in space, which includes also other ISS International Partners. X-ray diffraction is still the most powerful tool to determine the protein three dimensional structure necessary for Structure based drug design (SBDD). The major purpose of the experiment is to grow high quality protein crystals in microgravity for X-ray diffraction on Earth. Within one and a half decade, Japan and Russia have established an efficient process over PCG in space to support latest developments over drug design and structural biology. One of the keys for success of the experiment lies in how precisely pre-launch preparations are made. Japanese party provides flight equipment for crystallization and ensures the required environment to support the experiment aboard of the ISS’s Kibo module, and also mainly takes part of the experiment ground support such as protein sample characterization, purification, crystallization screening, and solution optimization for microgravity experiment. Russian party is responsible for integration of the flight items equipped with proteins and precipitants on board Russian transportation space vehicles (Soyuz or Progress), for delivery them at the ISS, transfer to Kibo module, and returning the experiments’ results back on Earth aboard Soyuz manned capsule. Due to close cooperation of the parties and solid organizational structure, samples can be launched at the ISS every half a year if the ground preparation goes smoothly. The samples are crystallized using counter diffusion method at 20 degree C for 1–2.5 months. After samples return, the crystals are carefully taken out from the capillary, and frozen for X-ray diffraction at SPring8 facility in Japan. Extensive support of researchers from both countries is also a part of this process. The paper analyses details of the PCG experiment scheme, unique and reliable technology of its execution, and contains examples of the application. Key words: International Space Station, Protein crystals, Microgravity, International collaboration.

scholarly journals Struvite Grown in Gel, Its Crystal Structure at 90 K and Thermoanalytical Study

Crystals ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 89 ◽  
Author(s):  
Jolanta Prywer ◽  
Lesław Sieroń ◽  
Agnieszka Czylkowska
Keyword(s):  
Thermal Analysis ◽  
Sodium Metasilicate ◽  
X Ray Diffraction ◽  
Gel Growth ◽  
Growth Technique ◽  
Thermoanalytical Study ◽  
X Ray ◽  
Cell Parameters ◽  
Thermal Analysis Techniques ◽  
Derivative Thermogravimetry

In this article, we report the crystallization of struvite in sodium metasilicate gel by single diffusion gel growth technique. The obtained crystals have a very rich morphology displaying 18 faces. In this study, the habit and morphology of the obtained struvite crystals are analyzed. The crystals were examined and identified as pure struvite by single X-ray diffraction (XRD). The orthorhombic polar noncentrosymmetric space group Pmn21 was identified. The structure of the crystal was determined at a temperature of 90 K. Our research indicates a lack of polymorphism, resulting from the temperature lowering to 90 K, which has not been previously reported. The determined unit cell parameters are as follows a = 6.9650(2) Å, b = 6.1165(2) Å, c = 11.2056(3) Å. The structure of struvite is presented here with a residual factor R1 = 1.2% at 0.80 Å resolution. We also present thermoanalytical study of struvite using thermal analysis techniques such as thermogravimetry (TG), derivative thermogravimetry (DTG) and differential thermal analysis (DTA).

scholarly journals Crystallographic features of ammonium fluoroelpasolites: dynamic orientational disorder in crystals of (NH4)3HfF7 and (NH4)3Ti(O2)F5

2017 ◽  
Vol 73 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Anatoly A. Udovenko ◽  
Alexander A. Karabtsov ◽  
Natalia M. Laptash
Keyword(s):  
Single Crystal ◽  
Electron Density ◽  
Diffraction Data ◽  
Central Atom ◽  
X Ray Diffraction ◽  
Dynamic Nature ◽  
Orientational Disorder ◽  
High Quality ◽  
Structural Units ◽  
X Ray

A classical elpasolite-type structure is considered with respect to dynamically disordered ammonium fluoro-(oxofluoro-)metallates. Single-crystal X-ray diffraction data from high quality (NH4)3HfF7 and (NH4)3Ti(O2)F5 samples enabled the refinement of the ligand and cationic positions in the cubic Fm \bar 3 m (Z = 4) structure. Electron-density atomic profiles show that the ligand atoms are distributed in a mixed (split) position instead of 24e. One of the ammonium groups is disordered near 8c so that its central atom (N1) forms a tetrahedron with vertexes in 32f. However, a center of another group (N2) remains in the 4b site, whereas its H atoms (H2) occupy the 96k positions instead of 24e and, together with the H3 atom in the 32f position, they form eight spatial orientations of the ammonium group. It is a common feature of all ammonium fluoroelpasolites with orientational disorder of structural units of a dynamic nature.

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