scholarly journals Mechanism of improvement of TiN-coated tool life by nitrogen implantation

2001 ◽  
Vol 16 (11) ◽  
pp. 3293-3303 ◽  
Author(s):  
S. J. Bull ◽  
Yu. P. Sharkeev ◽  
S. V. Fortuna ◽  
I. A. Shulepov ◽  
A. J. Perry
Keyword(s):  
Ion Implantation ◽  
Surface Composition ◽  
Slight Reduction ◽  
Nitrogen Implantation ◽  
Force Microscopy ◽  
Tin Coatings ◽  
Coated Tools ◽  
Atomic Force ◽  
Transmission Electron ◽  
Coated Tool

The life of TiN-coated tools can be improved by a post-coating ion implantation treatment, but the mechanism by which this occurs is still not clear. Nitrogen implantation of both physical-vapor-deposited TiN and CVD TiN leads to surface softening as the dose increases, which has been attributed to amorphization. In this study a combination of transmission electron microscopy and atomic force microscopy was used to characterize the microstructure of implanted TiN coatings on cemented carbide for comparison with mechanical property measurements (nanoindentation, residual stress, etc.), made on the same samples. Ion implantation leads to a slight reduction in the grain size of the TiN in the implanted zone, but there is no evidence for amorphization. Surface softening is observed for physical-vapor-deposited TiN, but this is probably due to a combination of changes in surface composition and the presence of a layer of bubbles generated by the very high implantation doses used.

Thermal Stability and Analysis of Laser Deposited Platinum Films

2000 ◽  
Vol 624 ◽  
Author(s):  
G.J. Berry ◽  
J.A. Cairns ◽  
M.R. Davidson ◽  
Y.C. Fan ◽  
A.G. Fitzgerald ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Photoelectron Spectroscopy ◽  
Elevated Temperatures ◽  
Surface Composition ◽  
Direct Write ◽  
Force Microscopy ◽  
Annealing Conditions ◽  
Atomic Force ◽  
Transmission Electron ◽  
Induced Decomposition

ABSTRACTAs the trend towards device miniaturisation continues, surface effects and the thermal stability of metal deposits becomes increasingly important. We present here a study of the morphology and composition of platinum films, produced by the UV-induced decomposition of organometallic materials, under various annealing conditions. The surface composition of the metal deposits was studied by X-ray photoelectron spectroscopy, both as-deposited and following thermal treatment. In addition, the morphology of the surface was studied by atomic force microscopy which enabled the investigation of film restructuring. These studies were performed over a range of temperatures up to 1000°C in air and up to 600°C in reducing environments. Complementary information regarding the film morphology has been obtained from transmission electron microscopy. The data has been used to provide an insight into the effects of elevated temperatures on metal films deposited by a direct write method

scholarly journals Structural and optical properties of HDPE implanted with medium fluences silver ions

2021 ◽  
Vol 53 (2) ◽  
pp. 187-198
Author(s):  
Milos Nenadovic ◽  
Danilo Kisic ◽  
Miljana Mirkovic ◽  
Snezana Nenadovic ◽  
Ljiljana Kljajevic
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Silver Ions ◽  
Surface Region ◽  
Sample Surface ◽  
Phase Imaging ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

The implantation of high-density polyethylene (HDPE) has been conducted using Ag+ ions with energy of 60 keV, achieved fluences 1.5 and 10?1015 ions/cm2. Transmission electron microscopy (STEM) and field emission gun - scanning electron microscopy (FEG-SEM) showed the existence of nanoparticle clusters. X ray photoelectron spectroscopy (XPS) revealed the presence of silver in the sample surface region. The surface topography was studied by atomic force microscopy (AFM), while the surface composition uniformity was analyzed using phase imaging AFM. Optical characterization obtained by spectroscopic ellipsometry (SE) showed changes in refractive index, extinction coefficient and the optical band gap with the fluence of implanted ions.

Oxidation behavior of TiN with a Ti interlayer on stainless steel

2004 ◽  
Vol 819 ◽  
Author(s):  
Ming-Hua Shiao ◽  
Ching-Chiun Wang ◽  
Chien-Ying Su ◽  
Fuh-Sheng Shieu
Keyword(s):  
Stainless Steel ◽  
Steel Substrate ◽  
Depth Profiling ◽  
Columnar Structure ◽  
304 Stainless Steel ◽  
Force Microscopy ◽  
Tin Coatings ◽  
Atomic Force ◽  
Transmission Electron ◽  
Tin Thin Films

AbstractCharacterization of the TiN coatings oxidized in air at temperatures at 600 and 700°C for 30 min was carried out by X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM) and Auger electron spectroscopy (AES). TiN thin films with a Ti interlayer were prepared by hollow cathode discharge ion plating on AISI 304 stainless steel. Both XRD and TEM results show that the TiN coatings and Ti interlayer have columnar structure with (111) and (0002) preferred orientations, respectively. AFM results show the existence of pinholes on the surface of specimens due to electropolishing process of the steel substrate, and the surface roughness (Ra) changes from 3.5 nm for the as-deposited specimen to 11.6 nm after oxidation at 700°. After oxidation, the TiO2 oxide layer formed on the specimen surface was porous and retained the columnar structure as the original TiN coating. The microstructure of the Ti interlayer gradually changed from columnar to polycrystalline structure due to grain growth. The Auger elemental depth profiling indicated that interdiffusion of the Ti interlayer with steel substrate had occurred during the oxidation process.

Scanning tunneling microscopy and atomic force microscopy: New tools for biology

1989 ◽  
Vol 47 ◽  
pp. 778-779
Author(s):  
CE Bracker ◽  
P. K. Hansma
Keyword(s):  
Physical Property ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Small Scale ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
New Family ◽  
Small Probe ◽  
Atomic Force ◽  
Transmission Electron

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Microscopic studies of fast phase transformations in GeSbTe films

2001 ◽  
Vol 674 ◽  
Author(s):  
Ralf Detemple ◽  
Inés Friedrich ◽  
Walter Njoroge ◽  
Ingo Thomas ◽  
Volker Weidenhof ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Data Transfer ◽  
Optical Measurements ◽  
Transfer Rates ◽  
Force Microscopy ◽  
High Data ◽  
Atomic Force ◽  
Transmission Electron ◽  
Future Success ◽  
Microscopic Studies

ABSTRACTVital requirements for the future success of phase change media are high data transfer rates, i.e. fast processes to read, write and erase bits of information. The understanding and optimization of fast transformations is a considerable challenge since the processes only occur on a submicrometer length scale in actual bits. Hence both high temporal and spatial resolution is needed to unravel the essential details of the phase transformation. We employ a combination of fast optical measurements with microscopic analyses using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM measurements exploit the fact that the phase transformation from amorphous to crystalline is accompanied by a 6% volume reduction. This enables a measurement of the vertical and lateral speed of the phase transformation. Several examples will be presented showing the information gained by this combination of techniques.

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