Mechanical deformation-induced Sn whiskers growth on electroplated films in the advanced flexible electronic packaging

2007 ◽  
Vol 22 (7) ◽  
pp. 1975-1986 ◽  
Author(s):  
Shih-kang Lin ◽  
Yuhi Yorikado ◽  
Junxiang Jiang ◽  
Keun-Soo Kim ◽  
Katsuaki Suganuma ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Flexible Substrate ◽  
Mechanical Deformation ◽  
Cross Sectional ◽  
Sn Whisker ◽  
Sn Whiskers ◽  
Grain Orientations ◽  
Cu Substrates

In this study, we investigated mechanical deformation-induced Sn whisker growth, which is frequently encountered in advanced flexible substrate packaging. Concentrated compressive stresses are introduced around the leads and solder surface finish joints connected by compression fixing. Six types of pure Sn thin films were electroplated on Ni-protected Cu substrates. These were 2- and 6-μm-thick Sn films electroplated with three different current densities: 2, 10, and 20 A/dm2. These films were compressed at room temperature and ambient humidity. The surface and cross-sectional grain morphologies of the films were examined by scanning electron microscopy and focused ion beam spectroscopy, respectively. The grain orientations of the electroplated Sn films were analyzed by x-ray diffraction and electron backscatter diffraction. After compression, nodule hillocks and whiskers were found around the indents. Beneath the indents, the original columnar Sn grains were deformed, and recovery and recrystallization processes occurred. Rapid whisker formation was observed. The whiskers induced by mechanical deformation are closely related to the grain microstructures, and the initial compression stresses are critical to the types and distribution of whiskers as well.

Microstructural Investigation of the Deformation Zone below Nano-Indents in Copper

2007 ◽  
Vol 1049 ◽  
Author(s):  
Martin Rester ◽  
Christian Motz ◽  
Reinhard Pippan
Keyword(s):  
Cross Sections ◽  
Deformation Zone ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Shape Change ◽  
Ion Beam ◽  
Dislocation Loops ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Experimental Findings

AbstractThe deformation zone below nanoindents in copper single crystals with an <110>{111} orientation is investigated. Using a focused ion beam (FIB) system, cross-sections through the center of the indents were fabricated and subsequently analyzed by means of electron backscatter diffraction (EBSD) technique. Additionally, cross-sectional TEM foils were prepared and examined. Due to changes in the crystal orientation around and beneath the indentations, the plastically deformed zone can be visualized and related to the measured hardness values. Furthermore, the hardness data were analyzed using the Nix-Gao model where a linear relationship was found for H2 vs. 1/hc, but with different slopes for large and shallow indentations. The measured orientation maps indicate that this behavior is presumably caused by a change in the deformation mechanism. On the basis of possible dislocation arrangements, two models are suggested and compared to the experimental findings. The model presented for large imprints is based on dislocation pile-ups similar to the Hall-Petch effect, while the model for shallow indentations uses far-reaching dislocation loops to accommodate the shape change of the imprint.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

Comparison of Focused Ion Beam and Conventional Techniques on Tem Specimen Preparation of Metal-Ceramic Interfaces

1998 ◽  
Vol 4 (S2) ◽  
pp. 860-861 ◽  
Author(s):  
A. Ramirez de Arellano López ◽  
W.-A. Chiou ◽  
K. T. Faber
Keyword(s):  
Focused Ion Beam ◽  
Ceramic Coating ◽  
Steel Substrate ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Inhomogeneous Materials ◽  
Cross Sectional ◽  
Fine Grain ◽  
Basic Industry ◽  
Coated Surface

The results of TEM analyses of materials are critically dependent on the quality of the sample prepared. Although numerous techniques have been developed in the last two decades, differential thinning of inhomogeneous materials remains a serious problem. Recently, focused ion beam (FIB) technique has been introduced for cross-sectional sample preparation for TEM and SEM.A novel system for depositing a fine-grain (∼ 200 nm) ceramic coating on a metal surface via a patent pending Small-Particle Plasma Spray (SPPS) technique has been developed at the Basic Industry Research Laboratory of Northwestern University. To understand the properties of the coated surface, the ceramic/metal interface and the microstructure of the ceramic coating must be investigated. This paper presents a comparison of the microstructure of an A12O3 coating on a mild steel substrate prepared using conventional and FEB techniques.

Cross-sectional microanalysis for tracking the effect of solvent on the morphological evaluation of PLA/AgNWs bionanocomposties

2021 ◽  
pp. 096739112110230
Author(s):  
Meltem Sezen ◽  
Busra Tugba Camic
Keyword(s):  
Focused Ion Beam ◽  
Silver Nanowires ◽  
Low Cost ◽  
Ion Beam ◽  
Lower Surface ◽  
Polymer Matrices ◽  
Elemental Distribution ◽  
Medical Sciences ◽  
Surface Area Ratio ◽  
Cross Sectional

The emphasis of biocompatible polymer applications in medical sciences and biotechnology has remarkably increased. Developing new low-cost, low-toxicity and lightweight composite forms of biopolymers has become even more attractive since the addition of new species into polymer matrices assist to improve biomedical activities of such materials to a higher extend. Developments in nanoscience and nanotechnology recently contribute to controlled fabrication and ultraprecise diagnosis of such materials. This study concerns the observation of solution processing effects in the fabrication of porous PLA/AGNWs bionanocomposite coatings using electron and ion processing based serial cross-sectioning and high-resolution imaging. The nanostructuring and characterization were both performed in a focused ion-beam-scanning electron microscope (FIB-SEM) platform. HR-SEM imaging was conducted on-site to track solvent based morphological property alterations of PLA and PLA/AgNWs structures. Simultaneous SEM-EDS analyses revealed the elemental distribution and the chemical composition along the cross-sectioned regions of the samples. Accordingly, it was observed that, in case of acetone dissolved materials, both pristine PLA and PLA/AgNWs samples sustained their foamy structure. When chloroform was used as the solvent, the porosity of the polymer matrices was less and the resulting structure was found to be denser than samples dissolved in acetone with a lower surface area ratio inside the material. This can be attributed to the rapid volatilization of acetone compared to chloroform, and hence the formation of interconnected pore network. For both nanocomposite biopolymers dissolved in acetone and chloroform, silver nanowires were homogeneously distributed throughout PLA matrices.

scholarly journals Artificial generation of representative single Li-ion electrode particle architectures from microscopy data

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Orkun Furat ◽  
Lukas Petrich ◽  
Donal P. Finegan ◽  
David Diercks ◽  
Francois Usseglio-Viretta ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Lithium Ion ◽  
Scale Model ◽  
Multi Scale ◽  
Physics Modeling ◽  
Microscopy Data ◽  
Microscopy Techniques ◽  
Backscatter Diffraction

AbstractAccurately capturing the architecture of single lithium-ion electrode particles is necessary for understanding their performance limitations and degradation mechanisms through multi-physics modeling. Information is drawn from multimodal microscopy techniques to artificially generate LiNi0.5Mn0.3Co0.2O2 particles with full sub-particle grain detail. Statistical representations of particle architectures are derived from X-ray nano-computed tomography data supporting an ‘outer shell’ model, and sub-particle grain representations are derived from focused-ion beam electron backscatter diffraction data supporting a ‘grain’ model. A random field model used to characterize and generate the outer shells, and a random tessellation model used to characterize and generate grain architectures, are combined to form a multi-scale model for the generation of virtual electrode particles with full-grain detail. This work demonstrates the possibility of generating representative single electrode particle architectures for modeling and characterization that can guide synthesis approaches of particle architectures with enhanced performance.

scholarly journals Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

JOM ◽  
2021 ◽  
Author(s):  
Alexander J. Leide ◽  
Richard I. Todd ◽  
David E. J. Armstrong
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Residual Stresses ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Compressive Residual Stresses

AbstractSilicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens.

Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

2018 ◽  
Vol 1 (2) ◽  
pp. 115-123 ◽  
Author(s):  
Zhongdu He ◽  
Zongwei Xu ◽  
Mathias Rommel ◽  
Boteng Yao ◽  
Tao Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Focused Ion Beam ◽  
Electron Backscatter Diffraction ◽  
Ion Beam ◽  
Implantation Dose ◽  
Formation Mechanisms ◽  
Schematic Model ◽  
Dose Threshold ◽  
Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

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