Microstructural, Optical and Electrical Properties Of Post-Annealed ZnO:Al Thin Films

2012 ◽  
Vol 1394 ◽  
Author(s):  
Coralie Charpentier ◽  
Patricia Prod’Homme ◽  
Loïc Francke ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Vacuum Annealing ◽  
Microstructural Analysis ◽  
Rf Magnetron Sputtering ◽  
Charge Carrier Concentration ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Aluminum Doped Zinc Oxide ◽  
Concentration Limits

ABSTRACTAluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering from a ceramic mixed target ZnO:Al2O3 (1 wt.%) with a power of 250 W. Two series of samples were deposited at room temperature, the first one in pure Ar atmosphere, the second one in Ar/O2 gas mixture. Effects of post-deposition annealing treatments carried out from 400 °C to 500 °C under vacuum and in N2/H2 (5%) atmosphere have been investigated. The influence of these parameters was studied by a detailed microstructural analysis using X-Ray diffraction and Raman spectroscopy. For N2/H2 annealing process, the increase of charge carrier concentration limits the increase of the mobility while after vacuum annealing, an improvement of both electrical and optical properties was observed. The increase of the crystallinity and grain size for ZnO:Al films deposited in Ar/O2 gas mixture could explain their improvements. Resistivity was reduced down to 3.5×10-4 Ω.cm, for a mobility of 49 cm2/V.s with a vacuum annealing at 450 °C for ZnO:Al deposited in Ar/O2 gas mixture.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

scholarly journals NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Savita Sharma ◽  
Monika Tomar ◽  
Nitin K. Puri ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sensing Properties ◽  
Glass Substrates ◽  
Corning Glass ◽  
Interdigital Electrodes ◽  
Wo3 Thin Films

Tungsten trioxide (WO3) thin films were deposited by Rf-magnetron sputtering onto Pt interdigital electrodes fabricated on corning glass substrates. NO2 gas sensing properties of the prepared WO3 thin films were investigated by incorporation of catalysts (Sn, Zn, and Pt) in the form of nanoclusters. The structural and optical properties of the deposited WO3 thin films have been studied by X-ray diffraction (XRD) and UV-Visible spectroscopy, respectively. The gas sensing characteristics of all the prepared sensor structures were studied towards 5 ppm of NO2 gas. The maximum sensing response of about 238 was observed for WO3 film having Sn catalyst at a comparatively lower operating temperature of 200°C. The possible sensing mechanism has been highlighted to support the obtained results.

scholarly journals Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15Film

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jian-Yang Lin ◽  
Chia-Lin Wu
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Rf Magnetron Sputtering ◽  
Resistive Random Access Memory ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Bipolar Switching ◽  
Ito Glass ◽  
Switching Characteristics ◽  
Surface Morphologies

The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.

Optical Properties of Anatase, Rutile and Amorphous Phases of TiO2 Thin Films Grown at Room Temperature by RF Magnetron Sputtering

2002 ◽  
Vol 755 ◽  
Author(s):  
V. M. Naik ◽  
D. Haddad ◽  
R. Naik ◽  
J. Benci ◽  
G. W. Auner
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Absorption Data ◽  
Amorphous Phases ◽  
Glass Substrates ◽  
A Value ◽  
Value Range

ABSTRACTAnatase (A), rutile (R) and amorphous phase TiO2 thin films have been prepared by RF magnetron sputtering on unheated glass substrates by controlling the total pressure of sputtering gases (Ar + O2) and the substrate bias. The crystal structures of the films were confirmed by x-ray diffraction and Raman scattering. The analysis of optical absorption data for A- TiO2 film shows an energy bandgap (Eg) of 3.2 eV (indirect extrapolation) and ∼ 3.5 eV (direct extrapolation). On the other hand, R-TiO2 film shows Eg ∼ 2.9 eV (indirect) and 3.2 eV (direct). The latter film also shows the presence of amorphous regions with Eg ∼ 3.0 eV (indirect) and 3.8 eV (direct). The bandgap of both the films, obtained using indirect extrapolation, has a value range consistent with the previous measurements.

SPECTROSCOPIC ELLIPSOMETRIC STUDIES ON THE OPTICAL PROPERTIES OF PHOSPHORUS DOPED NANOCRYSTALLINE NiO THIN FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 985-988 ◽  
Author(s):  
N. S. DAS ◽  
K. K. CHATTOPADHYAY ◽  
B. SAHA ◽  
R. THAPA
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Rf Magnetron Sputtering ◽  
Suitable Model ◽  
X Ray Diffraction ◽  
Phosphorus Doping ◽  
X Ray ◽  
Glass Substrates ◽  
Increase With Increase ◽  
Phosphorus Doped

Undoped and phosphorus doped nanocrystalline nickel oxide thin films have been synthesized on silicon and glass substrates by RF magnetron sputtering technique in pure Ar atmosphere. Proper phase formation was confirmed by X-ray diffraction analysis. Energy band gaps were determined using UV-Vis spectra. Formation of NiO nanoparticle of dimension ~15 nm was confirmed using HRTEM. Doping of phosphorus as an impurity was confirmed from EDX spectra and XPS studies. Spectroscopic ellipsometric studies were performed on such films and the spectra were analyzed with a suitable model. Optical constants were determined and refractive indices were found to increase with increase of phosphorus doping percentages.

scholarly journals ZnO:Al Grown by Sputtering from Two Different Target Sources: A Comparison Study

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Abdalla A. Alnajjar
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Transparent Conductive Oxide ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ceramic Targets

Al-doped ZnO thin films were deposited from two different targets. Ceramic targets were used in RF magnetron sputtering, whereas pulsed magnetron sputtering was used to grow films from powder targets. ZnO:Al films with different thicknesses were sputtered directly on soda-lime glass substrates. The film thickness was in the 0.04–2.0 μm range. The microstructure, such as the grain size and the texture, of the two differently grown ZnO:Al transparent conductive oxide films of different thickness, was studied using X-ray diffractionθ/2θscans. The optical properties, such as the transmittance and reflectance, were measured using a UV-Vis-NIR spectrometer. Further, the sheet resistance, resistivity, carrier concentration, and Hall mobility of these ZnO:Al thin films were measured as a function of film thickness. These results obtained from the two different deposition techniques were compared and contrasted.

Thickness Dependence of Structural and Optical Characteristics of AZO Thin Films for Organic Photovoltaic Cells

2011 ◽  
Vol 117-119 ◽  
pp. 1076-1079
Author(s):  
S.L. Wei ◽  
L.H. Zeng ◽  
Z.Y. Zhong ◽  
J.H. Gu
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Visible Spectrum ◽  
Rf Magnetron Sputtering ◽  
Optical Characteristics ◽  
Hexagonal Crystal ◽  
Optical Energy Gap ◽  
Glass Substrates ◽  
Aluminum Doped Zinc Oxide ◽  
Deposited Films

Aluminum-doped zinc oxide (AZO) thin films with highly (002)-preferred orientation were grown on glass substrates by rf magnetron sputtering. The effect of thickness on structural and optical characteristics of the deposited films were investigated by X-ray diffractometer and spectrophotometer. The results show that the polycrystalline AZO films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the thickness significantly affects the crystal structure and optical properties of the thin films. With the increase of thickness, the crystallite size of the films increases, the lattice spacing, dislocation density, micro strain and optical energy gap decrease, and the average transmitance in the wavelength range of the visible spectrum also slightly decreases.

Crystallinity and Characterization of Rf-Magetron Sputtered ZnO-Doped (Zr0.8Sn0.2)TiO4 Thin Films on ITO/Glass Substrate

2012 ◽  
Vol 486 ◽  
pp. 345-349
Author(s):  
Cheng Hsing Hsu ◽  
Pai Chuan Yang ◽  
Wen Shiush Chen ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Morphological Characteristics ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

Microstructure, optical and electrical properties of ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different argon-oxygen (Ar/O2) mixture have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the Ar/O2 ratio. Optical transmittance spectroscopy further revealed high transparency (over 70%) in the visible region of the spectrum. At an Ar/O2 ratio of 100/0 and a substrate temperature of 400°C, the ZnO-doped (Zr0.8Sn0.2)TiO2 films possess a dielectric constant of 44 at 10 MHz, a dissipation factor of 0.03 at 10 MHz, a leakage current density of 3.73×10-9 A/cm2.

Effect of the Heat Treatment on the Microstructure and Morphology of Cigs Thin Films Prepared by RF Magnetron Sputtering at Room Temperature

2020 ◽  
Vol 1012 ◽  
pp. 119-124
Author(s):  
Paulo Victor Nogueira da Costa ◽  
Rodrigo Amaral de Medeiro ◽  
Carlos Luiz Ferreira ◽  
Leila Rosa Cruz
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Morphological Changes ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates

This work investigates the microstructural and morphological changes on CIGS thin films submitted to a post-deposition heat treatment. The CIGS 1000 nm-thick films were deposited at room temperature by RF magnetron sputtering onto glass substrates covered with molybdenum films. After deposition, the samples were submitted to a heat treatment, with temperatures ranging from 450 to 575 oC. The treatment was also carried out under a selenium atmosphere (selenization), from 400 to 500 oC. Morphological analyzes showed that the as-deposited film was uniform and amorphous. When the treatment was carried out without selenization, the crystallization occurred at or above 450 oC, and the grains remained nanosized. However, high temperatures led to the formation of discontinuities on the film surface and the formation of extra phases, as confirmed by X-ray diffraction data. The crystallization of the films treated under selenium atmosphere took place at lower temperatures. However, above 450 °C the film surface was discontinuous, with a lot of holes, whose amount increased with the temperature, showing that the selenization process was very aggressive. X-ray diffraction analyses showed that the extra phases were eliminated during selenization and the films had a preferential orientation along [112] direction. The results indicate that in the manufacturing process of solar cells, CIGS films deposited at room temperature should be submitted to a heat treatment carried out at 450 °C (without selenization) or 400 °C (with selenization).

Influence of Annealing Temperatures on the Properties of Dual-Layer W-TiO2 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 506-509
Author(s):  
Chia Cheng Huang ◽  
Fang Hsing Wang ◽  
Cheng Fu Yang ◽  
Hong Hsin Huang ◽  
Cheng Yi Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Structure Morphology ◽  
Layer Thin Film

W-TiO2 (W, tungsten) dual-layer thin films are deposited by RF magnetron sputtering onto glass substrates and annealed at 150oC~400oC for 4hrs. The crystal structure, morphology, and trans- mittance of annealed W-TiO2 dual-layer thin films are investigated by X-ray diffraction, FESEM, and UV-Vis spectrometer, respectively. The annealing temperatures have large effect on the properties of W-TiO2 dual-layer thin films. The band gap energy values of W-TiO2 dual-layer thin films are evaluated from (h)1/2 versus energy plots. The energy gap for un-annealed W-TiO2 dual-layer thin film is 3.16 eV. As the annealing temperature increases from 150oC to 400oC, the energy gap decreases from 3.16 eV to 3.10 eV.

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