scholarly journals In Situ Study of Dislocation Behavior in Columnar Al Thin Film on Si Substrate During Thermal Cycling

1999 ◽  
Vol 594 ◽  
Author(s):  
Charles W. Allen ◽  
Herbert Schroeder ◽  
Jon M. Hiller
Keyword(s):  
Thin Film ◽  
Thermal Cycling ◽  
Grain Structure ◽  
Dislocation Model ◽  
Si Substrate ◽  
Transmission Electron ◽  
Dislocation Behavior ◽  
Columnar Grain ◽  
Al Thin Film

AbstractIn situ transmission electron microscopy (150 kV) has been employed to study the evolution of dislocation microstructures during relatively rapid thermal cycling of a 200 nm Al thin film on Si substrate. After a few thermal cycles between 150 and 500°C, nearly stable Al columnar grain structure is established with average grain less than a μm. On rapid cooling (3–30+ °C/s) from 500°C, dislocations first appear at a nominal temperature of 360–380°C, quickly multiplying and forming planar glide plane arrays on further cooling. From a large number of such experiments we have attempted to deduce the dislocation evolution during thermal cycling in these polycrystalline Al films and to account qualitatively for the results on a simple dislocation model.

Sb-Doped Polycrystalline Si Obtained by Means of Sb and Si Thin-Film Reactions

1987 ◽  
Vol 106 ◽  
Author(s):  
S. F. Gong ◽  
A. E. Robertsson ◽  
S.-E. Hörnström ◽  
G. Radnoczi ◽  
H. T. G. Hentzell
Keyword(s):  
Thin Film ◽  
Electron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Si Substrate ◽  
Transmission Electron ◽  
Diffusion Source ◽  
Amorphous Si ◽  
P Type ◽  
Secondary Ion

ABSTRACTWe have grown Sb-doped poly-Si by thin-film reactions between Sb and amorphous Si (a-Si). The reactions and microstructures of the films were investigated by transmission electron microscopy (TEM) during in situ annealing and Auger electron spectroscopy (AES). The reactions either resulted in an amorphous Sb-Si (a-Sb-Si) alloy or caused crystallization of a-Si at low temperatures, depending on the film thickness of the a-Si layer as well as the heating rate. The electrical properties of the as-deposited and the annealed thin multi-layers deposited on SiO2 layer were determined using Hall measurements. After annealing at 1375 K for 60 minutes, Sb-doped poly-Si with a resistivity of 1.4×10−2 ohm-cm was obtained. A p-n junction was formed in a p-type Si substrate by using an a-Si/Sb/a-Si multi-layer as a diffusion source. The doping concentration in the Si substrate was obtained using secondary ion mass spectrometry (SIMS).

X-Ray Diffraction Analysis and Modeling of Strain Induced Thermal Cycling in a Thin Aluminum (011) Bicrystal Film

2001 ◽  
Vol 695 ◽  
Author(s):  
D. E. Nowak ◽  
O. Thomas ◽  
S. P. Baker ◽  
E. A. Stach ◽  
K. Balzuweit ◽  
...  
Keyword(s):  
Thermal Cycling ◽  
Dislocation Motion ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Transmission Electron ◽  
Threshold Temperatures ◽  
Slip Planes ◽  
Dislocation Behavior

ABSTRACTHeteroepitaxial films of aluminum bicrystals grown on silicon provide a model system in which to study plasticity in polycrystalline metal thin films. For the bicrystal films, dislocations are confined to move on two different slip plane orientations because of the orientation of the crystals on the substrate. In-situ transmission electron microscopy (TEM) observations during thermal cycling have shown two threshold temperatures for dislocation motion on cooling. A simple model uses the resolved shear stress on the possible slip planes to explain the TEM observations. Mechanisms responsible for the dislocation behavior are studied in-situ during thermal cycling between room temperature and 450°C with x-ray diffraction. The strains are determined using a sin2(Ψ) analysis at each temperature. Direct comparisons are made between the TEM observations, the model and x-ray diffraction results.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

Reversal Mechanisms in Lithographically Defined Magnetic Thin Film Elements Imaged by Scanning Transmission Electron Microscopy

1997 ◽  
Vol 3 (2) ◽  
pp. 146-153 ◽  
Author(s):  
Stephen McVitie ◽  
John N. Chapman
Keyword(s):  
Thin Film ◽  
Scanning Transmission Electron Microscopy ◽  
Magnetic Behavior ◽  
Hysteresis Cycle ◽  
Magnetic Thin Film ◽  
Lorentz Microscopy ◽  
Magnetic Imaging ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract: The magnetic behavior of lithographically defined thin film elements of permalloy imaged by Lorentz microscopy is described. Elements of thickness <100 nm, with in-plane dimensions in the micron and sub-micron range and of varying shape, have been subjected to in situ fields using an electron microscope that has been optimized for magnetic imaging. The information provided from the imaging modes has identified the details of the magnetization reversal mechanisms in the elements during the course of a hysteresis cycle. In particular, domain wall clusters which form at the edges of the elements are observed prior to switching of the magnetization. Results are described from elements with near single and multidomain structures with different geometry.

Formation of Intermetallics and Grain Boundary Diffusion in Cu-Al and Au-Al Thin Film Couples

1981 ◽  
Vol 10 ◽  
Author(s):  
J. M. Vandenberg ◽  
F. J. A. Den Broeder ◽  
R. A. Hamm
Keyword(s):  
Thin Film ◽  
Hexagonal Phase ◽  
Interface Reaction ◽  
Aluminum Film ◽  
Temperature Dependent ◽  
X Ray ◽  
Wide Range ◽  
Al Thin Film ◽  
Rich Side

An in situ annealing X-ray study was applied to Cu-Al thin film couples over a wide range of copper-to-aluminum film ratios. This new technique, which has been previously described for a study on the Au-Al thin film system, enables us to make a temperature-dependent photographic X-ray analysis. The present study indicated that only a limited number of the wide variety of bulk phases form in the Cu-Al thin film interface, while some of these phases in the interface are transient. In the transient stages of the interface reaction, the f.c.c.-ordered phase β-Cu3A1 grows over the entire range of copper-to-aluminum film ratios after the first nucleation of CuA12, indicating a two-step nucleation reaction. On the aluminum-rich side, this phase transforms to a new ordered hexagonal phase β′. It could be interpreted as a superlattice of the metastable hexagonal ω phase occurring in zirconium-based alloys. The end phases are CuA1 and CuAl2.

scholarly journals Fabrication, Corrosion, and Mechanical Properties of Magnetron Sputtered Cu–Zr–Al Metallic Glass Thin Film

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4147
Author(s):  
Xianshun Wei ◽  
Chengxi Ying ◽  
Jing Wu ◽  
Haoran Jiang ◽  
Biao Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Metallic Glasses ◽  
Electrochemical Corrosion ◽  
Grazing Incidence ◽  
Amorphous Structure ◽  
Amorphous Phases ◽  
Transmission Electron ◽  
Value Range ◽  
Al Thin Film

The appearance of thin film metallic glasses (TFMGs) is gaining increasing interest because of their unique mechanical and anticorrosion properties and potential engineering applications. In this study, Cu–Zr–Al ternary thin film metallic glasses were fabricated by using DC magnetron sputtering equipment with various target powers. The evolution of the structure was systematically investigated by grazing incidence X-ray diffractometer, scanning electron microscopy, and transmission electron microscopy. The deposition rate increases with the increasing of applied target power. The as-deposited thin films show an amorphous structure. The compositional fluctuations on the nanometer scale indicate the presence of two Cu- and Zr-rich amorphous phases. The electrochemical corrosion measurements indicated that Cu–Zr–Al thin film metallic glasses had good corrosion resistance in the sulfuric acid solution. Nanoindentation results showed that the mechanical deformation was found to be homogenous and reproducible with a high value range for the hardness and modulus.

High quality a-Si/Nb and a-SiN/NbN artificial multilayers for Josephson applications

1994 ◽  
Vol 9 (7) ◽  
pp. 1678-1682 ◽  
Author(s):  
J. Chen ◽  
E.D. Rippert ◽  
S.N. Song ◽  
M.P. Ulmer ◽  
J.B. Ketterson
Keyword(s):  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Layer Growth ◽  
Interface Condition ◽  
Grain Structure ◽  
Transmission Electron Microscopy Study ◽  
High Quality ◽  
Columnar Growth ◽  
Transmission Electron ◽  
Columnar Grain

A high resolution transmission electron microscopy study of multilayer films prepared by magnetron sputtering shows that the morphology of the growing interface in a-Si/Nb and a-SiN/NbN multilayers is remarkably uniform and smooth; this is in contrast to the polycrystalline AlN/NbN multilayers grown under similar conditions, which exhibit columnar grain structure with rough interfaces. For proper sputtering parameters, the amorphous layers seem to periodically restore a relatively smooth initial interface condition for the successive Nb (or NbN) layer growth, consequently interrupting the tendency toward increased roughness due to mechanisms such as columnar growth. Artificial multilayers having very flat interfaces could stimulate applications based on multilayer Josephson junctions.

In Situ Measurement of Stresses in Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
Reinhard Abermann
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gas Adsorption ◽  
Gas Diffusion ◽  
Island Growth ◽  
Stress Measurements ◽  
Growth Modes ◽  
Columnar Grain ◽  
Selection Of

ABSTRACTIn this paper the results of experiments are summarized in which the internal stress (i.e. force per unit width) of thin films was measured in situ under UHV conditions with a bending beam apparatus. It is demonstrated that characteristic types of stress vs. thickness curves can be correlated with different growth modes (i.e. columnar grain growth and island growth) caused by differences in the adatom mobility of the deposited material. With a selection of thin film systems it is then shown that stress measurements can be used to study the effect of gas incorporation, of gas diffusion from the substrate, of reaction with the substrate and of the substrate temperature on the growth and structure of a thin film. Finally it will be demonstrated that stress measurements can even be used to study gas adsorption on vapor deposited films.

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