New hybrid low-k dielectric materials prepared by vinylsilane polymerization

2004 ◽  
Vol 812 ◽  
Author(s):  
Jung-Won Kang ◽  
Byung Ro Kim ◽  
Gwi-Gwon Kang ◽  
Myung-Sun Moon ◽  
Bum-Gyu Choi ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Hybrid Materials ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Good Adhesion ◽  
Inorganic Hybrid ◽  
Adhesion Promoters ◽  
Semiconductor Structures ◽  
Wide Range ◽  
Low K

AbstractSpin-on Low-K materials are potentially very attractive as interconnection materials in a wide range of semiconductor structures. In this work, new organic-inorganic hybrid materials synthesized by vinylsilane polymerization were proposed. According to compositions and additional fabrications, dielectric constants of these materials were evaluated to be 2.3∼3.1. The hardness was 2.0GPa after 430°C curing. These materials had good adhesion strength such that fracture toughness on silicon wafer was 0.22 MPam0.5 without any adhesion promoters. This result indicates that these organicinorganic hybrid materials are very promising candidates for low-K dielectrics.

New Carbon-bridged Hybrid Polymers for Low-k Materials

2005 ◽  
Vol 863 ◽  
Author(s):  
Bum-Gyu Choi ◽  
Byung Ro Kim ◽  
Myung-Sun Moon ◽  
Jung-Won Kang ◽  
Min-Jin Ko
Keyword(s):  
Mechanical Properties ◽  
Hybrid Materials ◽  
Chemical Mechanical Planarization ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Metal Line ◽  
Inorganic Hybrid ◽  
Low Dielectric ◽  
Continuous Stiffness Measurement ◽  
Low K

AbstractReducing interline capacitance and line resistance is required to minimize RC delays, reduce power consumption and crosstalk below 100nm node technology. For this purpose, various inorganic- and organic polymers have been tested to reduce dielectric constants in parallel with the use of copper as metal line. Lowering the dielectric constants, in particular, causes the detrimental effect on mechanical properties, and then leads to film damage and/or delamination during chemical-mechanical planarization CMP) or repeated thermal cure cycles. To overcome this issue, new carbon-bridged hybrid materials synthesized by organometallic silane precursors and sol-gel reaction are proposed.In this work, we have developed new organic-inorganic hybrid low-k dielectrics with linear or cyclic carbon bridged structures. The differently bridged carbon structures were formed by a controlled reaction. 1H NMR, 29Si NMR analysis and GC/MSD analysis were conducted for the structural characterization of new hybrid low-k dielectric. The mechanical and dielectric properties of these hybrid materials were characterized by using nanoindentation with continuous stiffness measurement and Al dot MIS techniques. The results indicated that these organic-inorganic hybrid materials were very promising polymers for low-k dielectrics that had low dielectric constants with high thermal and mechanical properties. It has been also demonstrated that electrical and mechanical properties of the hybrid films could be tailored by copolymerization with PMSSQ and through the introduction of porogen.

scholarly journals Organo-Inorganic Hybrid Intumescent Fire Retardant Coatings for Thermoplastics Based on Poly(Vinylphosphonic Acid)

Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 688 ◽  
Author(s):  
Baljinder K. Kandola ◽  
Katherine V. Williams ◽  
John R. Ebdon
Keyword(s):  
Hybrid Materials ◽  
Fire Retardant ◽  
Barrier Properties ◽  
Good Adhesion ◽  
Inorganic Hybrid ◽  
Thin Coatings ◽  
Organic Species ◽  
Water Tolerance ◽  
Dry Adhesion ◽  
Vinylphosphonic Acid

Thin coatings of crosslinked poly(vinylphosphonic acid), PVPA, display good adhesion and excellent intumescent, fire-retardant barrier properties when applied to the surfaces of a typical thermoplastic, such as poly(methyl methacrylate), but perform relatively poorly in water-soak tests. To strengthen and further improve the barrier properties of the intumescent char and to make the coating more hydrophobic, PVPA has been complexed with various inorganic and organic species. The chars formed from coatings of some of these hybrid materials are less friable than chars from coatings synthesized from crosslinked PVPA alone, and show higher levels of water tolerance with no significant reduction in dry adhesion to the substrate.

Designing Ultra Low-k Dielectric Materials for Ease of Patterning

2010 ◽  
Vol 1249 ◽  
Author(s):  
George Andrew Antonelli ◽  
Gengwei Jiang ◽  
Mandyam Sriram ◽  
Kaushik Chattopadhyay ◽  
Wei Guo ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Ion Beam ◽  
Plasma Reactor ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Interlayer Dielectric ◽  
Inductively Coupled ◽  
Inductively Coupled Plasma Reactor ◽  
Low K

AbstractOrganosilicate materials with dielectric constants (k) ranging from 3.0 to 2.2 are in production or under development for use as interlayer dielectric materials in advanced interconnect logic technology. The dielectric constant of these materials is lowered through the addition of porosity which lowers the film density, making the patterning of these materials difficult. The etching kinetics and surface roughening of a series of low-k dielectric materials with varying porosity and composition were investigated as a function of ion beam angle in a 7% C4F8/Ar chemistry in an inductively-coupled plasma reactor. A similar set of low-k samples were patterned in a single damascene scheme. With a basic understanding of the etching process, we will show that it is possible to proactively design a low-k material that is optimized for a given patterning. A case study will be used to illustrate this point.

Novel Low-k Dual-phase Materials Prepared by PECVD

2000 ◽  
Vol 612 ◽  
Author(s):  
Alfred Grill ◽  
Vishnubhai Patel
Keyword(s):  
Dielectric Constant ◽  
Dielectric Materials ◽  
Significant Loss ◽  
Dielectric Constants ◽  
Dual Phase ◽  
Metal Insulator ◽  
Unstable Phase ◽  
Silicon Structures ◽  
Low K ◽  
Initial Results

AbstractDielectric materials based on Si, C., O, H (SiCOH) have been demonstrated previously with dielectric constants of about 2.8. This value could be potentially further reduced by increasing/introducing porosity in the SiCOH films. Depositing multiphase films containing at least one thermally unstable phase and annealing the films to remove this labile phase from the material could create the enhanced porosity. Dual-phase materials, SiCOH-CH, have been prepared in the present study by PECVD from mixtures of a SiCOH precursor with a hydrocarbon. The films have been characterized as-deposited and after thermal anneals of up to 4 hours at 400°C. The atomic composition of the films has been determined by RBS and FRES analysis and their optical properties have been determined by FTIR and n&k measurements. Metal-insulator-silicon structures have been used to measure the electrical properties of the dual-phase films. After an initial anneal at 400°C, accompanied by a significant loss of CH and some SiH species and a thickness loss of up to 50%, the films stabilized. Depending on the deposition conditions and concentration of the CH precursor in the feed gas, the dielectric constant decreased by 10-15% during the stabilization anneal and reached values as low as 2.4. These initial results indicate the possibility to further reduce the dielectric constant of PECVD produced SiCOH films and the potential to incorporate such films in the interconnect structures of future ULSI chips.

Ultra Low-K Inorganic Silsesquioxane Films with Tunable Electrical and Mechanical Properties

2000 ◽  
Vol 612 ◽  
Author(s):  
Thomas A. Deis ◽  
Chandan Saha ◽  
Eric Moyer ◽  
Kyuha Chung ◽  
Youfan Liu ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Room Temperature ◽  
Moisture Absorption ◽  
Dielectric Constants ◽  
Mechanical And Thermal Properties ◽  
Processing Conditions ◽  
Film Composition ◽  
Temperature Oxidation ◽  
Wide Range ◽  
Low K

AbstractLow-k dielectric films have been developed using a new silsesquioxane based chemistry that allows both the electrical and mechanical properties to be tuned to specific values. By controlling the composition and film processing conditions of spin-on formulations, dielectric constants in the range 1.5 to 3.0 are obtained with modulus values that range from 1 to 30 GPa. The modulus and dielectric constant are tuned by controlling porosity, which varies from 0 to >60%, and final film composition which varies from HSiO3/2 to SiO4/2. The spin-on formulation includes hydrogen silsesquioxane resin and solvents. Adjusting the ratio of solvents to resin in the spin-on formulation controls porosity. As-spun films are treated with ammonia and moisture to oxidize the resin and form a mechanically self-supporting gel. Solvent removal and further conversion to a more “silica-like” composition occur during thermal curing at temperatures of 400 to 450°C. The final film composition was controlled through both room temperature oxidation and thermal processing. Final film properties are optimized for a balance of electrical, mechanical and thermal properties to meet the specific requirements of a wide range of applications. Processed films exhibit no stress corrosion cracking or delamination upon indentation, with indenter penetration exceeding the film thickness, and followed by exposure to water at room temperature. Films also exhibit high adhesive strength (> 60MPa) and low moisture absorption. Processing conditions, composition and properties of thin are discussed.

Determination of the Modulus and Hardness of Spin-on Zeolite Low-K Thin Films

2005 ◽  
Vol 880 ◽  
Author(s):  
Mark Johnson ◽  
Zijian Li ◽  
Yushan Yan ◽  
Junlan Wang
Keyword(s):  
Thin Films ◽  
Integrated Circuit ◽  
Material Selection ◽  
Dielectric Materials ◽  
Dielectric Constants ◽  
Depth Sensing ◽  
New Class ◽  
Low Dielectric ◽  
Pure Silica ◽  
Low K

AbstractWith the semiconductor technologies continuously pushing the miniaturization limits, there is a growing interest in developing novel low dielectric constant (low-k) materials to replace traditional dense SiO2 based insulators. In order to survive the multi-step integration process and provide reliable material and structure for the desired integrated circuit (IC) functions, the new low-k materials have to be mechanically strong and stable. Thus the material selection and mechanical characterization are vital in the successful development of next generation low-k dielectrics. A new class of low-k dielectric materials, nanoporous pure-silica zeolite, is prepared in thin films using IC compatible spin coating process and characterized using depth sensing nanoindentation technique. The elastic modulus measurements of the zeolite thin films are found to be significantly higher than that of other porous silicates with similar porosity and dielectric constants. Correlations of the mechanical, microstructural and electrical properties are discussed in detail.

UV Curable Organic-Inorganic Hybrid Materials

2000 ◽  
Vol 628 ◽  
Author(s):  
Guang-Way Jang ◽  
Ren-Jye Wu ◽  
Yuung-Ching Sheen ◽  
Ya-Hui Lin ◽  
Chi-Jung Chang
Keyword(s):  
Hybrid Materials ◽  
Colloidal Silica ◽  
Sol Gel ◽  
Solution Ph ◽  
Uv Curable ◽  
Inorganic Hybrid ◽  
Degradation Temperature ◽  
Sol Gel Process ◽  
The Stability ◽  
Thermal Degradation Temperature

This work successfully prepared an UV curable organic-inorganic hybrid material consisting of organic modified colloidal silica. Applications of UV curable organic-inorganic hybrid materials include abrasion resistant coatings, photo-patternable thin films and waveguides. Colloidal silica containing reactive functional groups were also prepared by reacting organic silane and tetraethyl orthosilicate (TEOS) using sol-gel process. In addition, the efficiency of grafting organic moiety onto silica nanoparticles was investigated by applying TGA and FTIR techniques. Experimental results indicated a strong interdependence between surface modification efficiency and solution pH. Acrylate-SiO2 hybrid formation could result in a shifting of thermal degradation temperature of organic component from about 200°C to near 400°C. In addition, the stability of organic modified colloidal silica in UV curable formula and the physical properties of resulting coatings were discussed. Furthermore, the morphology of organic modified colloidal silica was investigated by performing TEM and SEM studies‥

SAE 1020

Alloy Digest ◽  
1987 ◽  
Vol 36 (2) ◽  
Keyword(s):  
Fracture Toughness ◽  
Corrosion Resistance ◽  
Carbon Steel ◽  
Low Carbon Steel ◽  
Heat Treating ◽  
Low Carbon ◽  
Steel Mills ◽  
Temperature Performance ◽  
Wide Range ◽  
Cold Worked

Abstract SAE 1020 is a low-carbon steel combining good machinability, workability and weldability. It is carburized for use in case-hardened components and it is used for a wide range of applications in the hot-worked, cold-worked, normalized or quenched-and-tempered conditions. Its many uses include bolts, rods, plate applications, machinery components, case-hardened parts, spinning tools and trimming dies. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as fracture toughness. It also includes information on low temperature performance and corrosion resistance as well as heat treating, machining, joining, and surface treatment. Filing Code: CS-113. Producer or source: Carbon steel mills.

ZYMAXX

Alloy Digest ◽  
1991 ◽  
Vol 40 (10) ◽  
Keyword(s):  
Fracture Toughness ◽  
Compressive Strength ◽  
Corrosion Resistance ◽  
Creep Resistance ◽  
Chemical Processing ◽  
Industrial Equipment ◽  
Automotive Applications ◽  
Adverse Conditions ◽  
Chemical Inertness ◽  
Wide Range

Abstract ZYMAXX provides outstanding compressive creep resistance, toughness and chemical inertness at high temperatures and pressures and under adverse conditions. They have a wide range of uses beyond chemical processing, including aerospace and automotive applications, general industrial equipment, home appliances, farm and construction equipment. This datasheet provides information on physical properties, hardness, tensile properties, and compressive strength as well as fracture toughness and creep. It also includes information on corrosion resistance. Filing Code: Cp-18. Producer or source: E. I. Dupont de Nemours & Company Inc..

DURCOMET 100

Alloy Digest ◽  
1993 ◽  
Vol 42 (2) ◽  
Keyword(s):  
Fracture Toughness ◽  
Wear Resistance ◽  
Corrosion Resistance ◽  
Mechanical Strength ◽  
Heat Treating ◽  
Corrosion And Wear ◽  
Annealed Condition ◽  
Excellent Corrosion Resistance ◽  
Wide Range ◽  
Very High

Abstract Durcomet 100 is an improved version of Alloy CD-4 MCu with better corrosion and wear resistance. The alloy is used in the annealed condition and possesses excellent corrosion resistance over a wide range of corrosion environments. Mechanical strength is also very high. This datasheet provides information on composition, physical properties, hardness, and tensile properties as well as fracture toughness. It also includes information on corrosion resistance as well as heat treating and joining. Filing Code: SS-540. Producer or source: Duriron Company Inc.

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