scholarly journals Characterization of ZrO2-Montmorilonite Pillarization Process from Local Zirconium Oxychloride Local Made PSTA-BATAN

2018 ◽  
Vol 18 (4) ◽  
pp. 632
Author(s):  
Muzakky Muzakky ◽  
Herry Poernomo
Keyword(s):  
Zirconium Oxychloride ◽  
X Ray Diffraction ◽  
Dry Process ◽  
Transmission Electron ◽  
Surface Image ◽  
New Material ◽  
Ftir Spectrophotometry ◽  
Process Product

Characterization of the pillarization process product of ZrO2-montmorillonite from Zirconium oxychloride local made of PSTA-BATAN has been done. The objective of this research is to control the quality of pillarization process product of the new material ZrO2-montmorilonite.  This new material was produced from local made Zirconium oxychloride (ZOC) of PSTA-BATAN by dry process and bentonite (Na-montmorillonite) imported from Thailand by the pillarization process. During optimization the pillarization quality control would be followed by absorbance using Diffuse Reflectance Ultraviolet-Visible (UV-Vis DRS) spectroscopy and X-Ray Diffraction (XRD). While the type of functional group can be detected by Fourier Transform Infrared (FTIR) spectrophotometry, and the surface image was observed by using Transmission Electron Microscopy (TEM) and BET methods. The result gained showed that the optimum quality of ZrO2-montmorillonite was at Zr concentration of 0.2 M with the absorbance of 1.04 au by XRD and DRS. The best precursor used was ethylene glycol with a drying process in the cold conditions at the absorbance of 1.2 au. The best calcination process was at the temperature of 600 °C with the reached absorbance value of 1.3 au. The results of TEM image observation after calcination at the temperature of 600 °C were clearer and more porous than before and showed specific surface area of 105 m2/g. The interpretation results of FTIR spectra on the new material of ZrO2-montmorillonite contained the cluster of ΞSi-OH, ΞAl-OH and Si-O functional groups indicating pillar groups.

Growth and Characterization of (012)- and (001)-Oriented Epitaxial Anatase Thin Films

2006 ◽  
Vol 46 ◽  
pp. 146-151
Author(s):  
Andriy Lotnyk ◽  
Stephan Senz ◽  
Dietrich Hesse
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Single Phase ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Transmission Electron

Single phase TiO2 thin films of anatase structure have been prepared by reactive electron beam evaporation. Epitaxial (012)- and (001)-oriented anatase films were successfully obtained on (110)- and (100)-oriented SrTiO3 substrates, respectively. X-ray diffraction and cross section transmission electron microscopy investigations revealed a good epitaxial quality of the anatase films grown on the SrTiO3 substrates.

scholarly journals Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2236
Author(s):  
Arántzazu Núñez-Cascajero ◽  
Fernando B. Naranjo ◽  
María de la Mata ◽  
Sergio I. Molina
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Layer ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films

2010 ◽  
Vol 645-648 ◽  
pp. 371-374 ◽  
Author(s):  
Andrea Severino ◽  
Ruggero Anzalone ◽  
Corrado Bongiorno ◽  
Francesco La Via
Keyword(s):  
Epitaxial Films ◽  
Structural Defects ◽  
Defect Characterization ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Pole Figures ◽  
The Impact ◽  
Sic Films

A wide characterization of crystalline defects involved in the 3C-SiC heteroepitaxy on Si is here presented. The aim of this work is to show how analysis techniques, such as transmission electron microscopy (TEM) and x-ray diffraction (XRD), can help the researcher in the study of structural defects. The work is focused on stacking faults and microtwins since both of them influence the atomic stacking along the {111} 3C-SiC planes. Their distinction can indeed be troublesome. It will be shown that TEM can be helpful, by choosing a determined zone axis of observation, for defect characterization and distinction. Moreover, the impact of microtwins on the crystal quality of 3C-SiC films is studied by performing XRD pole figures. By means of this technique and simulations, we found that the <111> direction of the SiC crystal is not aligned to the <110> Si direction, but it is shifted of 3.5° along the <002> Si direction, due to second-order twinnings in the 3C-SiC crystal.

High-Quality GaInAsSb and GaAlAsSb Layers for Thermophotovoltaics Grown by Liquid-Phase Epitaxy

2010 ◽  
Vol 159 ◽  
pp. 87-90
Author(s):  
M. Milanova ◽  
Roumen Kakanakov ◽  
G. Koleva ◽  
P. Vitanov ◽  
V. Bakardjieva ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Al Content ◽  
Quaternary Compounds ◽  
Transmission Electron

GaSb based III-V heterostuctures are attractive for optoelectronic devices such as midin- frared lasers, detectors, and thermophotovoltaics (TPVs). In this paper the growth and characterization of GaInAsSb and GaAlAsSb quaternary layers, lat-tice-matched to GaSb substrate, are reported, with a particular focus on these alloys for TPV devi-ces. High-quality with a mirror-like surface morphology epilayers Ga1-x InxAsy Sb1-y with In content x in the range 0.1-0.22 and Ga1-xAlxAsySb1-y layers with Al content up to 0.3 in the solid are grown by Liquid-Phase Epitaxy (LPE) from In- and Ga-rich melt, respectively. The compositions of the quaternary compounds are determined by X-ray microanalysis. The crystalline quality of GaInAsSb/ GaSb and GaAlAsSb/GaSb heterostuctures is studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Detonation Synthesis of Nano-Size Materials

1995 ◽  
Vol 418 ◽  
Author(s):  
J. Forbes ◽  
J. Davis ◽  
C. Wong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Nucleation And Growth ◽  
Detonation Synthesis ◽  
X Ray Diffraction ◽  
Crystalline Materials ◽  
X Ray ◽  
Transmission Electron ◽  
Nano Size

AbstractThe detonation of explosives typically creates 100's of kbar pressures and 1000's K temperatures. These pressures and temperatures last for only a fraction of a microsecond as the products expand. Nucleation and growth of crystalline materials can occur under these conditions. Recovery of these materials is difficult but can occur in some circumstances. This paper describes the detonation synthesis facility, recovery of nano-size diamond, and plans to synthesize other nano-size materials by modifying the chemical composition of explosive compounds. The characterization of nano-size diamonds by transmission electron microscopy and electron diffraction, X-ray diffraction and Raman spectroscopy will also be reported.

One Step Synthesis and Characterization of Zirconia-Graphene Composites

2012 ◽  
Vol 600 ◽  
pp. 174-177 ◽  
Author(s):  
Jian Fei Xia ◽  
Zong Hua Wang ◽  
Yan Zhi Xia ◽  
Fei Fei Zhang ◽  
Fu Qiang Zhu ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Graphene Composite ◽  
Transmission Electron ◽  
One Step ◽  
Ft Ir ◽  
Xrd Techniques

Zirconia-graphene composite (ZrO2-G) has been successfully synthesized via decomposition of ZrOCl2•6H2O in a water-isopropanol system with dispersed graphene oxide (GO) utilizing Na2S as a precursor could enable the occurrence of the deposition of Zr4+ and the deoxygenation of GO at the same time. Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR) and X-ray diffraction (XRD) techniques were used to characterize the samples. It was found that graphene were fully coated with ZrO2, and the ZrO2 existing in tetragonal phase, which resulted in the formation of two-dimensional composite.

Characterization of JEOL 3000f TEM Equipped for Electron Holography

2000 ◽  
Vol 6 (S2) ◽  
pp. 228-229
Author(s):  
M. A. Schofield ◽  
Y. Zhu
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Design Of Experiment ◽  
Electron Holography ◽  
Fringe Spacing ◽  
Interference Fringes ◽  
Transmission Electron ◽  
Careful Design

Quantitative off-axis electron holography in a transmission electron microscope (TEM) requires careful design of experiment specific to instrumental characteristics. For example, the spatial resolution desired for a particular holography experiment imposes requirements on the spacing of the interference fringes to be recorded. This fringe spacing depends upon the geometric configuration of the TEM/electron biprism system, which is experimentally fixed, but also upon the voltage applied to the biprism wire of the holography unit, which is experimentally adjustable. Hence, knowledge of the holographic interference fringe spacing as a function of applied voltage to the electron biprism is essential to the design of a specific holography experiment. Furthermore, additional instrumental parameters, such as the coherence and virtual size of the electron source, for example, affect the quality of recorded holograms through their effect on the contrast of the holographic fringes.

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

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