scholarly journals GaN Based Inverter Current-Collapse Behavior with Switching Frequency and Blocking Voltage

2021 ◽  
Author(s):  
Pavel Skarolek ◽  
Filipp Frolov ◽  
Jiri Lettl
Keyword(s):  
Switching Frequency ◽  
Current Collapse ◽  
Blocking Voltage ◽  
Collapse Behavior

scholarly journals Experimental validation of new self-voltage balanced 9L-ANPC inverter for photovoltaic applications

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Jagabar Sathik ◽  
Dhafer J. Almakhles ◽  
N. Sandeep ◽  
Marif Daula Siddique
Keyword(s):  
Output Voltage ◽  
Pulse Width Modulation ◽  
Superior Performance ◽  
Modulation Scheme ◽  
Switching Frequency ◽  
Switched Capacitor ◽  
Renewable Energy Resources ◽  
High Quality ◽  
Multilevel Inverters ◽  
Blocking Voltage

AbstractMultilevel inverters play an important role in extracting the power from renewable energy resources and delivering the output voltage with high quality to the load. This paper proposes a new single-stage switched capacitor nine-level inverter, which comprises an improved T-type inverter, auxiliary switch, and switched cell unit. The proposed topology effectively reduces the DC-link capacitor voltage and exhibits superior performance over recently switched-capacitor inverter topologies in terms of the number of power components and blocking voltage of the switches. A level-shifted multilevel pulse width modulation scheme with a modified triangular carrier wave is implemented to produce a high-quality stepped output voltage waveform with low switching frequency. The proposed nine-level inverter’s effectiveness, driven by the recommended modulation technique, is experimentally verified under varying load conditions. The power loss and efficiency for the proposed nine-level inverter are thoroughly discussed with different loads.

GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal

2021 ◽  
Vol 14 (3) ◽  
pp. 036501
Author(s):  
Idriss Abid ◽  
Eleonora Canato ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
Kai Cheng ◽  
...  
Keyword(s):  
Substrate Removal ◽  
Current Collapse ◽  
Blocking Voltage ◽  
Silicon Transistors

scholarly journals A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

Energies ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4981
Author(s):  
Ekaterina Abramushkina ◽  
Assel Zhaksylyk ◽  
Thomas Geury ◽  
Mohamed El Baghdadi ◽  
Omar Hegazy
Keyword(s):  
Voltage Drop ◽  
Low Cost ◽  
Thermal Flux ◽  
Wide Bandgap ◽  
Junction Temperature ◽  
Switching Frequency ◽  
Switching Losses ◽  
Blocking Voltage ◽  
Voltage Limit ◽  
Main Components

The development of electric vehicles (EVs) is an important step towards clean and green cities. An electric powertrain provides power to the vehicle and consists of a charger, a battery, an inverter, and a motor as the main components. Supplied by a battery pack, the automotive inverter manages the power of the motor. EVs require a highly efficient inverter, which satisfies low cost, size, and weight requirements. One approach to meeting these requirements is to use the new wide-bandgap (WBG) semiconductors, which are being widely investigated in the industry as an alternative to silicon switches. WBG devices have superior intrinsic properties, such as high thermal flux, of up to 120 W/cm2 (on average); junction temperature of 175–200 °C; blocking voltage limit of about 6.5 kV; switching frequency about 20-fold higher than that of Si; and up to 73% lower switching losses with a lower conduction voltage drop. This study presents a review of WBG-based inverter cooling systems to investigate trends in cooling techniques and changes associated with the use of WBG devices. The aim is to consider suitable cooling techniques for WBG inverters at different power levels.

On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs

2008 ◽  
Vol 600-603 ◽  
pp. 1143-1146 ◽  
Author(s):  
Tomohiro Tamaki ◽  
Ginger G. Walden ◽  
Yang Sui ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Power Dissipation ◽  
Three Dimensional ◽  
Total Power ◽  
Switching Frequency ◽  
Dimensional Parameter ◽  
Switching Performance ◽  
Blocking Voltage ◽  
Maximum Current

We compare the on-state and switching performance of high-voltage 4H-SiC n-channel DMOSFETs and p-channel IGBTs within a three-dimensional parameter space defined by blocking voltage, switching frequency, and current density. We determine the maximum current density each device can carry at a given switching frequency, such that the total power dissipation is 300 W/cm2. The IGBT current depends strongly on lifetime in the NPT buffer layer, and only weakly on lifetime in the drift layer. The MOSFET current is essentially independent of frequency.

scholarly journals Deadbeat Control of a Modified Single-Phase Five-Level Photovoltaic Inverter with Reduced Number of Switches

2020 ◽  
Vol 2020 ◽  
pp. 1-16
Author(s):  
Mohsen Ghorbanali Afjeh ◽  
Mojtaba Babaei ◽  
Mohsen Alizadeh Bidgoli ◽  
Amir Ahmarinejad
Keyword(s):  
Single Phase ◽  
Pulse Width Modulation ◽  
Control Method ◽  
Digital Signal ◽  
Voltage Source ◽  
Switching Frequency ◽  
Semiconductor Switches ◽  
Optimal Output ◽  
Pv Inverter ◽  
Blocking Voltage

In this article, a modified single-phase five-level photovoltaic inverter is proposed with a single DC voltage source and six semiconductor switches. Compared with the presented inverters, the introduced topology has the advantage of decreased device count and the first switching frequency for high blocking voltage switches. The proposed PV inverter is implemented without clamping diodes and transformers, which leads to a decrement in size and, consequently, the weight of the converter. In addition, for the proposed topology, space vector pulse width modulation (SVPWM) is deployed that reduces the complexity of multilevel modulation. In order to obtain the optimal output voltage of the inverter, the deadbeat controller is suggested as a rapid dynamic, low-computation digital control method. This closed-loop inverter is implemented in TMS320f28335 digital signal controller to evaluate the performance of the proposed inverter under nonlinear and linear loads. Simulation and laboratory prototype results show that IEC 62040-3 harmonic constraints is met for the proposed photovoltaic inverter in standalone applications.

Comparison of Dc-Dc SEPIC, CUK and Flyback Converters Based LED Drivers

2020 ◽  
pp. 99-107
Author(s):  
Erdal Sehirli
Keyword(s):  
Integrated Circuit ◽  
Closed Loop ◽  
Input Voltage ◽  
Open Loop ◽  
Current Sensor ◽  
Switching Frequency ◽  
Led Driver ◽  
Advantages And Disadvantages ◽  
Led Drivers ◽  
Conduction Mode

This paper presents the comparison of LED driver topologies that include SEPIC, CUK and FLYBACK DC-DC converters. Both topologies are designed for 8W power and operated in discontinuous conduction mode (DCM) with 88 kHz switching frequency. Furthermore, inductors of SEPIC and CUK converters are wounded as coupled. Applications are realized by using SG3524 integrated circuit for open loop and PIC16F877 microcontroller for closed loop. Besides, ACS712 current sensor used to limit maximum LED current for closed loop applications. Finally, SEPIC, CUK and FLYBACK DC-DC LED drivers are compared with respect to LED current, LED voltage, input voltage and current. Also, advantages and disadvantages of all topologies are concluded.

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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