scholarly journals A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

Energies ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4981
Author(s):  
Ekaterina Abramushkina ◽  
Assel Zhaksylyk ◽  
Thomas Geury ◽  
Mohamed El Baghdadi ◽  
Omar Hegazy
Keyword(s):  
Voltage Drop ◽  
Low Cost ◽  
Thermal Flux ◽  
Wide Bandgap ◽  
Junction Temperature ◽  
Switching Frequency ◽  
Switching Losses ◽  
Blocking Voltage ◽  
Voltage Limit ◽  
Main Components

The development of electric vehicles (EVs) is an important step towards clean and green cities. An electric powertrain provides power to the vehicle and consists of a charger, a battery, an inverter, and a motor as the main components. Supplied by a battery pack, the automotive inverter manages the power of the motor. EVs require a highly efficient inverter, which satisfies low cost, size, and weight requirements. One approach to meeting these requirements is to use the new wide-bandgap (WBG) semiconductors, which are being widely investigated in the industry as an alternative to silicon switches. WBG devices have superior intrinsic properties, such as high thermal flux, of up to 120 W/cm2 (on average); junction temperature of 175–200 °C; blocking voltage limit of about 6.5 kV; switching frequency about 20-fold higher than that of Si; and up to 73% lower switching losses with a lower conduction voltage drop. This study presents a review of WBG-based inverter cooling systems to investigate trends in cooling techniques and changes associated with the use of WBG devices. The aim is to consider suitable cooling techniques for WBG inverters at different power levels.

scholarly journals High energy-efficient electrical drive with multilevel inverter and widebandgap power semiconductors

2021 ◽  
Vol 19 ◽  
pp. 91-96
Author(s):  
R. Mecke ◽  
Keyword(s):  
High Energy ◽  
Wide Bandgap ◽  
Drive System ◽  
Junction Temperature ◽  
Switching Frequency ◽  
Loss Reduction ◽  
Voltage Range ◽  
Power Semiconductors ◽  
Power Switches ◽  
Motor Operation

Multilevel inverters are an alternative for electrical drives with DC link voltage between 560 and 750 V. In this voltage range new wide-bandgap power switches (SiC MOSFET, GaN FET) are available. The paper analyses three-, four-, five- and seven-level inverters. A simulation model of the drive system, including the 11 kW induction motor and motor filter is developed. By replacing IGBTs with SiC FETs, the twolevel inverter achieved a loss reduction of 59 % at 25 °C and 150 °C at nominal motor operation point. By using the five-level inverter with GaN FETs, a further loss reduction of 9 % only at low junction temperature is possible. With a higher number of inverter levels, the size of the motor filter can be reduced. With five inverter levels and 40 kHz switching frequency volume and weight can be reduced by 86 % and 78 % respectively. The overall efficiency of the drive system achieves 98.5 % at 25 °C and 98.1 % at 150 °C. Compared to the state of the art (two-level with IGBTs with 5 kHz), this is an improvement of 2.1 % at 25 °C and 2.7 % at 150 °C.

A NOVEL PT AND NPT MIXED IGBT HAVING A NEW n-BUFFER LAYER

2007 ◽  
Vol 21 (01) ◽  
pp. 1-8
Author(s):  
FEI ZHANG ◽  
SHUHUA LUO ◽  
LIANG ZHANG ◽  
WEI WANG ◽  
WEN YU ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Voltage Drop ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Insulated Gate Bipolar Transistor ◽  
Switching Losses ◽  
Blocking Voltage ◽  
Forward Voltage Drop ◽  
Parallel Integration ◽  
First Time

For the first time, a novel mixed insulated gate bipolar transistor (MIGBT) is proposed and verified by two-dimensional (2D) mixed device-circuit simulations. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the buffer layer which is formed by employing the n+/n- structure, so that the trade-off relation between the conduction and switching losses is greatly improved and efficiently decoupled. Furthermore, the proposed device exhibits larger forward blocking voltage and positive temperature coefficient of the forward voltage drop, facilitating parallel integration.

A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode

2019 ◽  
Vol 963 ◽  
pp. 823-826
Author(s):  
Xiang Guo Wang ◽  
Masayuki Yamamoto
Keyword(s):  
Low Voltage ◽  
Low Cost ◽  
Wide Bandgap ◽  
Common Source ◽  
Switching Speed ◽  
Wide Bandgap Semiconductor ◽  
Switching Losses ◽  
Bipolar Devices ◽  
Bandgap Semiconductors ◽  
Silicon Based

The Super Cascode is a series connected structure with a normally-off low voltage Si-MOSFET and multiple normally-on wide bandgap semiconductors. It has low switching losses compared with silicon based bipolar devices, and low on-resistance and low cost compared with other single high voltage normally-off wide bandgap semiconductor devices. In practice, however, there are inevitable parasitic inductances, which result in the increase of switching losses. The method is proposed to eliminate the common-source inductances (CSIs), such as using stack-die configuration with each device and adding an additional inductance in the gate loop of Si-MOSFET. It is numerically shown that the rise and fall times of the proposed method were 33.5% and 7.2% faster than the conventional one, respectively.

scholarly journals Experimental validation of new self-voltage balanced 9L-ANPC inverter for photovoltaic applications

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Jagabar Sathik ◽  
Dhafer J. Almakhles ◽  
N. Sandeep ◽  
Marif Daula Siddique
Keyword(s):  
Output Voltage ◽  
Pulse Width Modulation ◽  
Superior Performance ◽  
Modulation Scheme ◽  
Switching Frequency ◽  
Switched Capacitor ◽  
Renewable Energy Resources ◽  
High Quality ◽  
Multilevel Inverters ◽  
Blocking Voltage

AbstractMultilevel inverters play an important role in extracting the power from renewable energy resources and delivering the output voltage with high quality to the load. This paper proposes a new single-stage switched capacitor nine-level inverter, which comprises an improved T-type inverter, auxiliary switch, and switched cell unit. The proposed topology effectively reduces the DC-link capacitor voltage and exhibits superior performance over recently switched-capacitor inverter topologies in terms of the number of power components and blocking voltage of the switches. A level-shifted multilevel pulse width modulation scheme with a modified triangular carrier wave is implemented to produce a high-quality stepped output voltage waveform with low switching frequency. The proposed nine-level inverter’s effectiveness, driven by the recommended modulation technique, is experimentally verified under varying load conditions. The power loss and efficiency for the proposed nine-level inverter are thoroughly discussed with different loads.

Chlorination Enabling a Low‐cost Benzodithiophene‐based Wide‐bandgap Donor Polymer with an Efficiency of over 17%

2021 ◽  
pp. 2105483
Author(s):  
Hang Wang ◽  
Hao Lu ◽  
Ya‐Nan Chen ◽  
Guangliu Ran ◽  
Andong Zhang ◽  
...  
Keyword(s):  
Low Cost ◽  
Wide Bandgap

Comparison of Total Losses of 1.2 kV SiC JFET and BJT in DC-DC Converter Including Gate Driver

2011 ◽  
Vol 679-680 ◽  
pp. 649-652 ◽  
Author(s):  
Jang Kwon Lim ◽  
Georg Tolstoy ◽  
Dimosthenis Peftitsis ◽  
Jacek Rabkowski ◽  
Mietek Bakowski ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Surface Recombination ◽  
Current Gain ◽  
Surface Recombination Velocity ◽  
Switching Frequency ◽  
Switching Losses ◽  
Insulator Interface ◽  
Gate Driver ◽  
Recombination Velocity ◽  
Emitter Junction

The 1.2 kV SiC JFET and BJT devices have been investigated and compared with respect to total losses including the gate driver losses in a DC-DC converter configuration. The buried grid, Normally-on JFET devices with threshold voltage of -50 V and -10V are compared to BJT devices with ideal semiconductor and passivating insulator interface and an interface with surface recombination velocity of 4.5•104 cm/s yielding agreement to the reported experimental current gain values. The conduction losses of both types of devices are independent of the switching frequency while the switching losses are proportional to the switching frequency. The driver losses are proportional to the switching frequency in the JFET case but to a large extent independent of the switching frequency in the BJT case. The passivation of the emitter junction modeled here by surface recombination velocity has a significant impact on conduction losses and gate driver losses in the investigated BJT devices.

Research on Multi-Mode Controller of Switching Power Supply

2014 ◽  
Vol 568-570 ◽  
pp. 1217-1220
Author(s):  
Shu Lin Liu ◽  
Li Li Qi
Keyword(s):  
Power Supply ◽  
Switching Frequency ◽  
Switching Power Supply ◽  
Load Range ◽  
Heavy Load ◽  
Operating Modes ◽  
Switching Power ◽  
Advantages And Disadvantages ◽  
Switching Losses ◽  
Light Load

In order to improve the efficiency of the switching power supply in whole load range, the controller with PWM, PFM and BURST operating modes is designed in this paper, which changes the operation mode automatically according to the load. The operating principle and the advantages and disadvantages of the three operating modes are analyzed and compared. PWM mode is used in heavy load; PFM mode is used in light load to reduce switching losses by reducing the switching frequency and BURST mode is used at the standby time to further reduce switching losses. The main control module is designed and simulation results verify the feasibility of the designed circuit.

Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes

2016 ◽  
Vol 33 (3) ◽  
pp. 167-171 ◽  
Author(s):  
Kazimierz Drabczyk ◽  
Edyta Wróbel ◽  
Grazyna Kulesza-Matlak ◽  
Wojciech Filipowski ◽  
Krzysztof Waczynski ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ethyl Alcohol ◽  
Diffusion Processes ◽  
Phosphorus Oxychloride ◽  
Low Cost ◽  
Content Type ◽  
Base Solution ◽  
Different Types ◽  
Main Components ◽  
Two Stages

Purpose The purpose of this study is comparison of the diffusion processes performed using the commercial available dopant paste made by Filmtronics and the original prepared liquid dopant solution. To decrease prices of industrially produced silicon-based solar cells, the new low-cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, anti-reflective layers and metal electrodes. This type of cells is prepared usually using phosphorus oxychloride diffusion source and metal pastes for screen printing. The diffusion process in diffusion furnace with quartz tube is slow, complicated and requires expensive equipment. The alternative for this technology is very fast in-line processing using the belt furnaces as an equipment. This approach requires different dopant sources. Design/methodology/approach In this work, the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution. The investigation was focused on dopant sources fabrication and diffusion processes. The doping solution was made in two stages. In the first stage, a base solution (without dopants) was made: dropwise deionized (DI) water and ethyl alcohol were added to a solution consisting of tetraethoxysilane (TEOS) and 99.8 per cent ethyl alcohol. Next, to the base solution, orthophosphoric acid dissolved in ethyl alcohol was added. Findings Diffused emitter layers with sheet resistance around 60 Ω/sq were produced on solar grade monocrystalline silicon wafers using two types of dopant sources. Originality/value In this work, the diffusion processes were made for two different types of dopant sources. The first one was the commercial available dopant paste from Filmtronics and the second one was the original prepared liquid dopant solution.

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