Linear HgCdTe IR FPA 288×4 with bidirectional scanning

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
V.V. Vasilyev ◽  
A.V. Predein ◽  
V.S. Varavin ◽  
N.N. Mikhailov ◽  
S.A. Dvoretsky ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Bias Voltage ◽  
Differential Resistance ◽  
Cmos Technology ◽  
Inert Atmosphere ◽  
Reverse Bias Voltage ◽  
Zero Bias ◽  
Photosensitive Layer ◽  
Boron Ions ◽  
Dark Currents

AbstractThe long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of n+-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to R0 = 1.6×107 Ω zero bias voltage, which corresponded to R0A ∼70 Ω ·cm2 and to the maximal value Rmax = 2.1 × 108 Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers.The IR FPAs were free of defect channels and have the average values of responsivity Sλ = 2.27×108 V/W, the detectivity Dλ * = 2.13 × 1011 cm × Hz1/2 × Wt1, and the noise equivalent temperature difference NETD = 9 mK.

scholarly journals The Demonstration of S2P (Serial-to-Parallel) Converter with Address Allocation Method Using 28 nm CMOS Technology

2021 ◽  
Vol 11 (1) ◽  
pp. 429
Author(s):  
Min-Su Kim ◽  
Youngoo Yang ◽  
Hyungmo Koo ◽  
Hansik Oh
Keyword(s):  
Integrated Circuits ◽  
Embedded System ◽  
Low Power ◽  
High Speed ◽  
Cmos Technology ◽  
Clock Frequency ◽  
Clock Generation ◽  
Allocation Method ◽  
Evaluation Board ◽  
28 Nm

To improve the performance of analog, RF, and digital integrated circuits, the cutting-edge advanced CMOS technology has been widely utilized. We successfully designed and implemented a high-speed and low-power serial-to-parallel (S2P) converter for 5G applications based on the 28 nm CMOS technology. It can update data easily and quickly using the proposed address allocation method. To verify the performances, an embedded system (NI-FPGA) for fast clock generation on the evaluation board level was also used. The proposed S2P converter circuit shows extremely low power consumption of 28.1 uW at 0.91 V with a core die area of 60 × 60 μm2 and operates successfully over a wide clock frequency range from 5 M to 40 MHz.

scholarly journals Design of an Ultra-Low Voltage Bias Current Generator Highly Immune to Electromagnetic Interference

2021 ◽  
Vol 11 (1) ◽  
pp. 6
Author(s):  
Orazio Aiello
Keyword(s):  
Integrated Circuits ◽  
Electromagnetic Interference ◽  
Low Voltage ◽  
Current Source ◽  
Building Blocks ◽  
Cmos Technology ◽  
Threshold Region ◽  
Output Current ◽  
Current Generator ◽  
Technology Process

The paper deals with the immunity to Electromagnetic Interference (EMI) of the current source for Ultra-Low-Voltage Integrated Circuits (ICs). Based on the properties of IC building blocks, such as the current-splitter and current correlator, a novel current generator is conceived. The proposed solution is suitable to provide currents to ICs operating in the sub-threshold region even in the presence of an electromagnetic polluted environment. The immunity to EMI of the proposed solution is compared with that of a conventional current mirror and evaluated by analytic means and with reference to the 180 nm CMOS technology process. The analysis highlights how the proposed solution generates currents down to nano-ampere intrinsically robust to the Radio Frequency (RF) interference affecting the input of the current generator, differently to what happens to the output current of a conventional mirror under the same conditions.

Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

scholarly journals Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Amir Muhammad Afzal ◽  
In-Gon Bae ◽  
Yushika Aggarwal ◽  
Jaewoo Park ◽  
Hye-Ryeon Jeong ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
High Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Zero Bias ◽  
Decay Times ◽  
Order Of Magnitude ◽  
Self Powered

AbstractHybrid organic–inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W−1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W−1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of − 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

Magnetic tunneling junctions based on 2D CrI3 and CrBr3: spin filtering effects and high tunnel magnetoresistance via energy band difference

2021 ◽  
Author(s):  
Li Liu ◽  
Shizhuo Ye ◽  
Jin He ◽  
Qijun Huang ◽  
Hao Wang ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Differential Resistance ◽  
High Tunnel ◽  
Voltage Range ◽  
Negative Differential Resistance Effect ◽  
Magnetoresistance Ratio ◽  
Spin Filtering

Abstract Recently, the study on two-dimensional materials expands to the field of spintronics. The intrinsically ferromagnetic van der Waals materials such as CrI3 and CrBr3 receive much attention due to nearly 100% spin polarization and good stability, resulting in excellent performance in magnetic tunnel junctions. In this work, we design the magnetic tunnel junctions of Cu/CrI3/Cu and Cu/CrBr3/Cu with the electrodes of Cu(111) and the tunneling barrier of 4-monolayer CrI3 or CrBr3. Our first-principle calculations combined with nonequilibrium Green’s function method indicate that the CrBr3-based MTJ has a larger maximum tunneling magnetoresistance ratio than the CrI3-based MTJ. In a wide bias voltage range, the CrI3-based MTJ can maintain high spin filtering performance, while that of the CrBr3-based MTJ degrades sharply as the bias voltage increases. It is noted that negative differential resistance effect is observed in the CrBr3-based MTJ. The differences of spin transport properties between the CrI3-based MTJ and the CrBr3-based MTJ are clarified in terms of the inside device physics, including the spin-dependent projected density of states, band structures, Bloch states, and the electron density difference. This work provides some physical insights for the design of 2D van der Waals MTJ.

scholarly journals Impact on Gain and Noise : ECG Amplifier & Comb Filter Design using OTA

2019 ◽  
Vol 8 (6S2) ◽  
pp. 803-808
Keyword(s):  
Integrated Circuits ◽  
Analog Circuit ◽  
Filter Design ◽  
Cmos Technology ◽  
Advanced Technology ◽  
Comb Filter ◽  
Design Environment ◽  
Transistor Channel ◽  
Ecg Amplifier ◽  
Finite Gain

The research paper ventures a novel modelling strategy of finite gain and noise of an electrocardiogram (ECG) amplifier at 0.18, 0.5 and 0.9 micron standard CMOS technologies respectively. An active comb filter is used to design the amplifier for removing the selected frequencies of numerous signals. The presented filter is configured with only Operational Transconductance Amplifiers (OTAs) and capacitors that makes it apt for implementation of monolithic integrated circuits (ICs). The relevance of this analog circuit is verified for a suitable test signal of 60 Hz as in the ECG signal. Using Cadence Virtuoso analog design environment, the effect of transistor channel length and width is examined for analysis of noise and bandwidth. It is observed that the performance in terms of noise and gain considerably increases for advanced technology node. However, for a suitable supply of bias current, a portable ECG system can also provide an improved bandwidth performance of advanced CMOS technology

scholarly journals Квантовый выход кремниевого лавинного фотодиода в диапазоне длин волн 120-170 nm

2020 ◽  
Vol 90 (8) ◽  
pp. 1386
Author(s):  
П.Н. Аруев ◽  
В.П. Белик ◽  
В.В. Забродский ◽  
Е.М. Круглов ◽  
А.В. Николаев ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Wavelength Range ◽  
Bias Voltage ◽  
Reverse Bias ◽  
Avalanche Photodiode ◽  
Reverse Bias Voltage ◽  
External Quantum Yield

The external quantum yield of silicon avalanche photodiode in the wavelength range of 120-170 nm was performed. It was shown that the engineered avalanche photodiode has the external quantum yield of 24-150 electron/proton under reverse bias voltage of 230-345 V, respectively. The testing of worked out avalanche photodiode by means of pulse flash of 280 and 340 nm wavelength demonstrates the speed, corresponding to the bandwidth not less than 25 MHz.

High photon detection efficiency single photon avalanche diode in 0.18 μm standard CMOS process

2017 ◽  
Vol 31 (17) ◽  
pp. 1750193 ◽  
Author(s):  
Wei Wang ◽  
Xiaoyuan Bao ◽  
Li Chen ◽  
Ting Chen ◽  
Guanyu Wang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Bias Voltage ◽  
Detection Efficiency ◽  
Single Photon ◽  
Cmos Process ◽  
Guard Ring ◽  
Reverse Bias Voltage ◽  
Photon Detection ◽  
Standard Cmos Process ◽  
Photon Detection Efficiency

This paper proposed a single photon avalanche diodes (SPADs) designed with 0.18 [Formula: see text] standard CMOS process. One of the major challenges in CMOS SPADs is how to raise the low photon detection efficiency (PDE). In this paper, the device structure and process parameters of the CMOS SPAD are optimized so as to improve PDE properties which have been investigated in detail. The CMOS SPADs are designed in p+/n-well/deep n-well (DNW) structure with the p-sub and the p-well guard ring (GR). The simulation results show that with the p-well GR, the quantum efficiency (QE) is about 80% with the breakdown voltage of 12.7 V, the unit responsivity is as high as 0.38 A/W and the PDE of 51% and 53% is obtained when the excess bias is at 1 V and 2 V, respectively. The dark count rate (DCR) is 6.2 kHz when bias voltage is 14 V. With the p-sub GR, the breakdown voltage is 13 V, the unit responsivity is up to 0.26 A/W, the QE is 58%, the PDE is 33% and 37% at excess bias of 1 V and 2 V, respectively. The DCR is 3.4 kHz at reverse bias voltage of 14 V.

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