scholarly journals Synthesis and characterization of Iron tungstate oxide films by advanced controlled spray pyrolysis technique

2019 ◽  
Vol 17 (41) ◽  
pp. 29-39
Author(s):  
Alaa A. Abdul-hamead
Keyword(s):  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Annealing Treatment ◽  
Tungstic Acid ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Sensor Applications ◽  
Semiconductor Oxides ◽  
Atomic Force

For the first time Iron tungstate semiconductor oxides films (FeWO4) was successfully synthesized simply by advanced controlled chemical spray pyrolysis technique, via employed double nozzle instead of single nozzle using tungstic acid and iron nitrate solutions at three different compositions and spray separately at same time on heated silicone (n-type) substrate at 600 °C, followed by annealing treatment for one hour at 500 °C. The crystal structure, microstructure and morphology properties of prepared films were studied by X-ray diffraction analysis (XRD), electron Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) respectively. According to characterization techniques, a material of well-crystallized monoclinic phase FeWO4 films with spindle and aggregated fine plates microstructures were obtained from using this advance technique, with thickness about 500 nm. Such these structures have been recognized as one of the most efficient microstructures due to their large specific surface area especially in gas sensor applications.

The Study of Al-N Codoped ZnO Thin Films Prepared by DC Magnetron Sputtering

2015 ◽  
Vol 754-755 ◽  
pp. 591-594
Author(s):  
Haslinda Abdul Hamid ◽  
M.N. Abdul Hadi
Keyword(s):  
Magnetron Sputtering ◽  
Structural Investigation ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxygen Gas ◽  
Film Roughness

The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 °C and 600 °C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by scanning electron microscopy (SEM), atomic force microscopy and x-ray diffraction (XRD). Film roughness and grain shape were found to be correlated with the annealing temperatures.

Improved Photovoltaic Efficiency of Polymer Photovoltaic Cells by Microwave Irradiation

2010 ◽  
Vol 663-665 ◽  
pp. 819-822
Author(s):  
Boeun Kim ◽  
Kyeong K. Lee ◽  
Sung Koo Lee ◽  
Eun Hee Lim
Keyword(s):  
Thermal Annealing ◽  
Acid Methyl Ester ◽  
Annealing Treatment ◽  
Polymer Chains ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Microwave Annealing ◽  
Photovoltaic Efficiency ◽  
Atomic Force ◽  
Thermal Annealing Treatment

In this study, microwave annealing treatment was introduced into poly(3-hexylthiophene) (P3HT):[6,6]-phenyl-C61butyric acid methyl ester (PCBM) and poly(9,9‘-dioctylfluorene-cobithiophene (PFT2):PCBM systems instead of thermal annealing treatment. In both systems, microwave annealing showed photovoltaic performane comparable to that of conventional thermal annealing. Through the UV-vis absorption, atomic force microscopy (AFM) and X-ray diffraction (XRD) studies, we were able to confirm that the microwave annealing increases the crystallization of the P3HT polymer chains.

Optical and Structural Properties of Fluorine Doped SnO2 on Si (100) for Photovoltaic Application

2018 ◽  
Vol 13 (10) ◽  
pp. 1522-1532 ◽  
Author(s):  
S. Nivetha ◽  
K. Kaviyarasu ◽  
A. Ayeshamariam ◽  
N. Punithavelan ◽  
R. Perumalsamy ◽  
...  
Keyword(s):  
Spray Pyrolysis Technique ◽  
Energy Difference ◽  
Vital Role ◽  
X Ray Diffraction ◽  
Energy Storage Devices ◽  
Sem Images ◽  
Storage Devices ◽  
Force Microscopy ◽  
Photovoltaic Application ◽  
Atomic Force

Photovoltaic material plays a vital role in the production of energy storage devices, more specifically in solar cell fabrications. In this work, ITO:F-doped materials were coated over the silicon substrate through spray pyrolysis technique. X-ray diffraction studies were conducted for porous silicon (PSi) coated with ITO:F structures formed at different current densities. This pore formation is evident from the broad peak at 69.9°, revealing an amorphous-like nature but at the same location where the single crystalline peak also is observed. These pores are explicitly shown in the SEM images in which very fine surface fragments are observed. At 20 mA/cm2, well-defined porous patterns that were uniformly distributed over the surface were observed. The microstructures observed via atomic force microscopy for these PSi coated with ITO:F structures are randomly aligned and almost evenly distributed over the entire surface of these nanorods, which are approximately 40 nm. Radiative recombination of electrons from a level in the conduction band or its subband to a level at an energy difference of greater than 1.7 eV in the valance band or its subband will emit visible light.

Synthesis and Atomic Force Microscopy Contact Current Images of Aluminum Doped ZnO Thin Films

2010 ◽  
Vol 644 ◽  
pp. 109-112
Author(s):  
N. Muñoz Aguirre ◽  
J. Eduardo Rivera-López ◽  
L. Martínez Pérez ◽  
Pedro A. Tamayo Meza
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Spray Pyrolysis Technique ◽  
Water Mist ◽  
Zno Thin Films ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Aluminum doped ZnO thin films were synthesized by the water-mist assisted spray pyrolysis technique. The structural characterization by means of X-Ray diffraction measurements is reported. By means of Atomic Force Microscopy, the superficial electrical characteristics of the thin films are studied. Specifically, contact current images are shown and discussed. It is important to emphasize that in spite of no voltage is applied to the Atomic Force Microscopy contact conductive tip, current images are getting.

scholarly journals Investigation of WO3 Electrodeposition Leading to Nanostructured Thin Films

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1493
Author(s):  
G. Mineo ◽  
F. Ruffino ◽  
S. Mirabella ◽  
E. Bruno
Keyword(s):  
Energy Gap ◽  
Rutherford Backscattering Spectrometry ◽  
Low Cost ◽  
Tungstic Acid ◽  
X Ray Diffraction ◽  
Cathodic Current ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gap Measurement ◽  
Instantaneous Nucleation

Nanostructured WO3 represents a promising material for electrochromic and sensing devices. In this scenario, electrodeposition is a promising low-cost approach for careful production. The electrodeposition of tungsten oxide film from a peroxo-tungstic-acid (PTA) solution is investigated. WO3 is synthetized onto Indium doped Tin Oxide (ITO) substrates, in a variety of shapes, from a fragmentary, thin layer up to a thick continuous film. Samples were investigated by scanning electron (SEM) and atomic force microscopy (AFM), Rutherford backscattering spectrometry (RBS), X-ray Diffraction analysis (XRD), energy gap measurement. Electrodeposition current curves are compared with characterization results to model the growth process. Early stages of electrodeposition are characterized by a transient cathodic current revealing an instantaneous nucleation followed by a diffusion limited process. A quantitative analysis of W deposition rate and current at working electrode validates a microscopic model for WO3 electrodeposition driving the process towards nanostructured versus continuous WO3 film.

Morphological and Structural Study of Nanostructured Tin Dioxide (SnO2) Thin Films by Spray Pyrolysis

2012 ◽  
Vol 626 ◽  
pp. 672-676
Author(s):  
Boon Hoong Ong ◽  
Heng Choy Lee ◽  
Sharifah Bee Abdul Hamid
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Substrate Temperature ◽  
Spray Pyrolysis ◽  
Tin Dioxide ◽  
Spray Pyrolysis Technique ◽  
Chemical Spray Pyrolysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Spray

Nanostructured SnO2 thin films were deposited on glass substrate using chemical spray pyrolysis technique. Three influent synthesis parameters, namely (i) the precursor concentration (0.2M and 0.5M), (ii) the substrate temperature (250°C and 350°C) and (iii) doping with zinc (Zn) were investigated in term of their effects on the morphology and structure of SnO2 thin films. These films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and energy dispersive X-ray spectrometry (EDX) techniques. The grain size of the films was observed to increase as the concentration of the precursors is increased. Substrate temperature is proved to be crucial in determining the crystallinity of the films as the films are reported to grow at temperature above 270°C. Besides, the addition of dopant was found to reduce the grain size of the film.

scholarly journals Structural optical and electrical properties of transparent conductive ITO/Al-Ag/ITO multilayer contact

2019 ◽  
Author(s):  
Aliyu Kabiru Isiyaku ◽  
Ahmad Hadi Ali ◽  
Nafarizal Nayan
Keyword(s):  
Electrical Properties ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Hall Effect Measurements ◽  
The Stability

Developing a new design and structure of transparent conductive oxides (TCO) materials to improve performance in optoelectronic devices are important and quite challenging. Microstructural, optical and electrical properties of sandwiched Al-Ag metals interlayer between top and bottom ITO layers (ITO/Al-Ag/ITO) have been investigated. The multilayer ITO/Al-Ag/ITO (IAAI) films were prepared using RF and DC magnetron sputtering method. Post annealing treatment at 400oC was conducted on IAAI and ITO (for reference) films in air. X-ray diffraction measurements show that the insertion of Al-Ag intermediate bilayer led to the crystallization of Ag interlayer even at as-deposited stage. Peaks intensities at ITO (222), Ag (111) and Al (200) crystal plane were observed after annealing treatment, indicating an enhancement in crystallinity of the IAAI film. The post-annealed IAAI film reveals a continuous and smooth surface roughness with improved growth in grain size as examined by atomic force microscopy (AFM) and field emission scanning electron microscopic (FESEM) respectively. Comparing the optoelectronic properties of IAAI film with single ITO film, the annealed IAAI film exhibited a remarkable improvement in optical transmittance (86.1%) with a very low sheet resistance of 2.93 Ω/sq as measured by UV-Vis spectrophotometer and four-point probe method. The carrier concentration increased more than double when Al-Ag layer was inserted between the ITO layers as determined by Hall Effect measurements. The under layer Al film helps to halts the Ag film agglomeration and oxidation which subsequently enhances the stability of IAAI multilayer film.  The performance of IAAI contact has been found to be high at 76.4 × 10-3 Ω compares to single ITO (69.4 × 10-3) contact as calculated by the figure of merit (FOM).

scholarly journals Effect the Composition Ratio of Cobalt Oxide on the Structural and Optical Properties of Tin Oxide

2019 ◽  
Vol 24 (3) ◽  
Author(s):  
Ahmed K. Abass, ◽  
Sura A. Abd Al-Hassan
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Cobalt Oxide ◽  
Tin Oxide ◽  
Spray Pyrolysis Technique ◽  
Oxide Thin Film ◽  
Chemical Spray Pyrolysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Xrd Patterns

Tin oxide thin films were deposited on glass substrate at (400 ºC) by using chemical spray pyrolysis technique and its composed with cobalt oxide in different ratio. The structural, morphologic and optical properties of  thin films are investigated by: (XRD) X-Ray Diffraction, (AFM) Atomic Force Microscopy, (UV-Vis )Ultraviolet – Visible Spectroscopy. XRD patterns indicate that the structure of tin oxide thin film is tetragonal. All prepared films were nano materials as stated by Scherrer equation. It might have been found by AFM analysis, those surface roughness increase with increasing of cobalt ratio. By provision about Tauc plots, optical band gaps for thin                               

scholarly journals Study of Structural and Optical Properties of Zinc Oxide Rods Grown on Glasses by Chemical Spray Pyrolysis

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Erdal Sonmez ◽  
Serdar Aydin ◽  
Mehmet Yilmaz ◽  
Mustafa Tolga Yurtcan ◽  
Tevhit Karacali ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

We have investigated morphological and optical properties of zinc oxide rods. Highly structured ZnO layers comprising with well-shaped hexagonal rods were prepared by spray pyrolysis deposition of zinc chloride aqueous solutions at ~550∘C. The rods were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, photoluminescence, and ultraviolet and visible absorption spectroscopy measurements. The deposition of the 0.1 mol/L solution at ~550∘C resulted in crystals with a diameter of 400–1000 nm and length of 500–2000 nm. Sharp near-band edge emission peaks, centered at 3844 and 3680 Å, dominated the PL spectra of ZnO at 300 K and 6.2 K, respectively. In addition to this, absorption coefficient was determined by absorption measurement. X-ray diffraction, scanning electron microscopy and atomic force microscopy, results suggest that ZnO rods, prepared by spray pyrolysis, have high crystalline quality. This is desirable in nanotechnology applications.

CeO2 Thin Films as Buffer Layers for Si/YBCO Integrated Microelectronics

2003 ◽  
Vol 768 ◽  
Author(s):  
Elena Tresso ◽  
V. Ballarini ◽  
A. Chiodoni ◽  
R. Gerbaldo ◽  
G. Ghigo ◽  
...  
Keyword(s):  
Film Growth ◽  
Ybco Film ◽  
Annealing Treatment ◽  
Lattice Parameter ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Properties Of Superconductors

AbstractThe unique properties of superconductors such as radiation hardness and high microwave performances [1-3] make the integration with semiconductor conventional electronics a stimulating challenge. Many attempts have been tried to obtain good quality YBa2Cu3O7-x (YBCO) films on Si substrates, with the aim of taking advantage from the properties of both materials, but interdiffusion reactions and a poor lattice and thermal expansion coefficient matching require the use of a buffer layer at the semiconductor/superconductor interface. Yttria-stabilized zirconia (YSZ), Y2O3, MgO, SrTiO3, CeO2 and their combinations have been proposed and used as buffer layers in the case of Si/YBCO systems. In this paper we report on annealing treatments performed on Si/CeO2 bilayers. A set of optimized samples with deposition temperatures ranging from 100°C to 800°C has been radiatively heated at two different annealing temperatures, in N2 and O2 atmospheres. All the samples have been characterized by X-ray diffraction, Atomic Force Microscopy, micro-Raman spectroscopy. The preferential grain orientation, the lattice parameter, the crystals dimensions, the surface roughness have been studied. As a preliminary tentative, we report on YBCO film growth on the top of CeO2/Si optimized bi-layer before undergoing annealing treatment. This YBCO film resulted to be a-axis preferential oriented, with some contribution of c-axis oriented grains.

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