scholarly journals Design, fabrication and testing of diamond radiation detectors for charged particle and neutron detection

2017 ◽  
Author(s):  
◽  
Haruetai Kasiwattanawut
Keyword(s):  
Charged Particle ◽  
Radiation Detection ◽  
Chemical Vapor ◽  
Radiation Detectors ◽  
Cvd Diamond ◽  
Alpha Particles ◽  
Energy Calibration ◽  
Beta Radiation ◽  
Host Materials ◽  
Current Voltage

In this work, the single crystal Chemical Vapor Deposition (CVD) diamond detectors were designed and fabricated to investigate and detect any possible charged particle and neutron emissions from gas-phase Low Energy Nuclear Reaction (LENR) experiments at room temperature. The diamond detectors were used in two experimental gas loading systems, palladium-deuterium, and nickel hydrogen. Palladium and nickel were used as host materials. Thin film layers of Ti/Pd and Ti/Pt/Au/Ni were deposited on the CVD diamond plates by evaporation techniques to create an Ohmic contact. Electronic characterizations of the detectors were completed by current-voltage measurements and energy calibration with alpha particles. The simulation and experimental run of the diamond detector with alpha and beta radiations exposures were done to determine the response of the detector to charged particles. The experimental results show that the diamond detectors observed and detected significant signal bursts from the gas loading experiments. The results from this work demonstrate that diamond detectors are suitable for alpha and beta radiation detection.

Characterization of CVD Diamond Films Used for Radiation Detection.

1994 ◽  
Vol 339 ◽  
Author(s):  
F. Foulon ◽  
T. Pochet ◽  
E. Gheeraert ◽  
A. Deneuville
Keyword(s):  
Carrier Mobility ◽  
Microwave Plasma ◽  
Radiation Detection ◽  
Diamond Films ◽  
Radiation Detectors ◽  
Cvd Diamond ◽  
Alpha Particles ◽  
Photon Flux ◽  
Detector Response ◽  
X Ray

ABSTRACTDiamond films produced by microwave plasma enhanced chemical vapor deposition (CVD) technique and used to fabricate radiation detectors have been characterized. The polycrystalline diamond films have a measured resistivity of 1012 Ω.cm and a carrier lifetime of about 530 ps. The carrier mobility - lifetime product depends on the density of photogenerated carriers. The carrier mobility decreases from 160 to 13 cm2/V.s for a carrier density increase from 2 × 1011 cm-3 to 3.7 × 1013 cm-3. The detector response to laser pulses (λ= 355, 532 and 1064 nm), X-ray flux (2.5 – 16 keV) and alpha particles (241Am, 5.49 MeV) has been investigated. The response speed of the detector is in the 100 ps range. X-ray photon flux measurements and alpha particle counting capabilities of the CVD diamond detectors are demonstrated.

scholarly journals Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 254 ◽  
Author(s):  
Krishna C. Mandal ◽  
Joshua W. Kleppinger ◽  
Sandeep K. Chaudhuri
Keyword(s):  
South Carolina ◽  
Epitaxial Layer ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Alpha Particles ◽  
Harsh Environment ◽  
University Of South Carolina ◽  
Defect Identification ◽  
The University ◽  
Shed Light

Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environment application have been studied extensively and reviewed in this article. The miniaturized devices were developed at the University of South Carolina (UofSC) on 8 × 8 mm 4H-SiC epitaxial layer wafers with an active area of ≈11 mm2. The thicknesses of the actual epitaxial layers were either 20 or 50 µm. The article reviews the investigation of defect levels in 4H-SiC epilayers and radiation detection properties of Schottky barrier devices (SBDs) fabricated in our laboratories at UofSC. Our studies led to the development of miniature SBDs with superior quality radiation detectors with highest reported energy resolution for alpha particles. The primary findings of this article shed light on defect identification in 4H-SiC epilayers and their correlation with the radiation detection properties.

Properties Of Zinc Selenide Grown By Chemical Vapor Transport And Its Application To Room-Temperature Radiation Detection

1997 ◽  
Vol 487 ◽  
Author(s):  
B. A. Brunett ◽  
J. E. Toney ◽  
H. Yoon ◽  
P. Rudolph ◽  
M. Schieber ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Gamma Ray ◽  
Radiation Detection ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Temperature Radiation

AbstractWe have characterized ZnSe material grown by chemical vapor transport in iodine using triple-axis X-ray diffraction (TAD), photo-induced current transient spectroscopy (PICTS), photoluminescence (PL), current-voltage measurements and gamma-ray spectroscopy. The material was found to have inadequate carrier transport for nuclear spectrometer use, but there was a discernible difference in performance between crystals which could be correlated with crystallinity as determined by the TAD rocking curves.

Boron Phosphide on Silicon for Radiation Detectors

1989 ◽  
Vol 162 ◽  
Author(s):  
J. C. Lund ◽  
F. Olschner ◽  
F. Ahmed ◽  
K. S. Shah
Keyword(s):  
Vapor Deposition ◽  
Ohmic Contacts ◽  
Chemical Vapor ◽  
Radiation Detectors ◽  
Alpha Particles ◽  
Silicon Substrates ◽  
Neutron Detectors ◽  
Boron Phosphide ◽  
Very High ◽  
Thick Layers

ABSTRACTWe report on radiation detectors fabricated from boron phosphide (BP) layers. These devices were fabricated by growing 1 to 10 μm thick layers of BP by chemical vapor deposition (CVD) on (100) oriented n-type silicon substrates. Ohmic contacts were applied to the Si (Au-Sb). Schottky barrier contacts (also Au-Sb) were applied to the BP layer. The devices were tested as radiation detectors and were found to be capable of detecting individual 5.5 MeV alpha particles. With some improvements we hope to fabricate neutron detectors from these devices, making use of the very high cross-section of boron for thermal neutrons.

scholarly journals The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6615
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska ◽  
...  
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Point Of View ◽  
Hydrogen Passivation ◽  
Temperature Dependent ◽  
Current Voltage ◽  
P Type ◽  
Hot Filament

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

The Properties Of a-Si:H/c-Si Heterostructures Prepared By 55 kHz Pecvd For Solar Cell Application

1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Low Frequency ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Solar Cell Application ◽  
Current Voltage ◽  
Frequency Plasma ◽  
Device Applications

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

GaN Radiation Detection Research Based on Monte Carlo Method

2014 ◽  
Vol 668-669 ◽  
pp. 1011-1014
Author(s):  
Yang Liu ◽  
Guo Zheng Zhu ◽  
Zhen Ni Xing
Keyword(s):  
Monte Carlo ◽  
Energy Deposition ◽  
Detection Efficiency ◽  
Hadron Collider ◽  
Radiation Detection ◽  
Radiation Energy ◽  
Radiation Detectors ◽  
Detection Mechanism ◽  
Radiation Beam ◽  
The Impact

Gallium nitride (GaN) is the third generation of semiconductor material; it has a large band gap, high thermal conductivity, low dielectric constant, high drift speed, etc. Radiation detectors based on GaN material have small volume, high radiation resistance, and fast response, can be used to replace the existing Large Hadron Collider vertex detector and track detector. Energy deposition characteristic of GaN detectors to radiation beam is an important factor for detection efficiency, and there are many factors that affect the energy deposition characteristics of the detector, like the detection mechanism, the impact of material properties, the type of incident ray, radiation energy, and many other factors. This paper studies the physical properties of GaN detector by calculation based on Monte Carlo simulation. Energy deposition characteristics are discussed respectively for incident γ-ray with different energy, in the front-end and back-end add PTFE material. The results of our study present the theoretical properties of GaN radiation detectors.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

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