COMPARISON OF THE CALCULATED WORKING RANGE OF THE THIRD GENERATION EOS AND MATRIX FOR NEAR IR RANGE
In the course of work on the master's thesis the analysis of daytime and night-time devices was carried out. The analysis showed that devices based on CCD-matrixes prevail in this segment, but the devices of this type cannot be fully called night devices, because the sensitivity of the matrixes used in their designs does not allow to observe without illumination at natural night illumination of 10-3 lux. It is known that IR illumination is a strong unmasking factor.EOS can provide acceptable image quality in natural nightlight. But their use in day-night devices has limitations. Under prolonged exposure to high light, the photocathode of EOS quickly becomes unusable, so when developing a day-night device must provide EOS protection from daylight. Thus it was decided to use CMOS-matrix as an image receiver in the night channel. This, in turn, solves several problems at once. When using the photoreceiver there is no need for mechanical switching between the channels, as there is no danger of light. Also the spectral range of sensitivity of CMOS-matrixes is much more various than that of CCD and EOS that allows to pick up an optimum range of frequencies and to refuse illumination at normal night illumination. In this article a comparison of the calculated range of detection of the device on the basis of EOS of 3 generation with the device in which as the image receiver CMOS-matrix is used.