scholarly journals An Investigation of Clock Skew Using a Wirelength-Aware Floorplanning Process in the Pre-Placement Stages of MSV Layouts

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2795
Author(s):  
B. Srinath ◽  
Rajesh Verma ◽  
Abdulwasa Bakr Barnawi ◽  
Ramkumar Raja ◽  
Mohammed Abdul Muqeet ◽  
...  

Managing the timing constraints has become an important factor in the physical design of multiple supply voltage (MSV) integrated circuits (IC). Clock distribution and module scheduling are some of the conventional methods used to satisfy the timing constraints of a chip. In this paper, we propose a simulated annealing-based MSV floorplanning methodology for the design of ICs within the timing budget. Additionally, we propose a modified SKB tree representation for floorplanning the modules in the design. Our algorithm finds the optimal dimensions and position of the clocked modules in the design to reduce the wirelength and satisfy the timing constraints. The proposed algorithm is implemented in IWLS 2005 benchmark circuits and considers power, wirelength, and timing as the optimization parameters. Simulation results were obtained from the Cadence Innovus digital system taped-out at 45 nm. Our simulation results show that the proposed algorithm satisfies timing constraints through a 30.6% reduction in wirelength.

Electronics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 325 ◽  
Author(s):  
Srinath Balasubramanian ◽  
Arunapriya Panchanathan ◽  
Bharatiraja Chokkalingam ◽  
Sanjeevikumar Padmanaban ◽  
Zbigniew Leonowicz

Multiple supply voltage is the most prevalent method for low power reduction in the design of modern Integrated circuits. Floorplanning process in this design performs positioning of functional blocks in the layout satisfying both fixed outline and voltage island constraints. The floorplans while satisfying these two significant constraints causes significant rise in wirelength and congestion. In this paper, a congestion and wirelength aware floorplanning algorithm is proposed which allows effective placement of functional blocks in the layout to satisfying fixed outline and voltage island constraints simultaneously. To perform voltage island floorplanning, the proposed algorithm uses Skewed binary tree representation scheme to operate the functional blocks in its predefined voltage level. The proposed methodology determines the feasible dimensions of the functional blocks in the representation which aids the placement process for the reduction of congestion and wirelength. With these optimal dimensions of the functional blocks, floorplanning is also performed for the layouts of aspect 1:1, 2:1, and 3:1, to evaluate the ability of proposed algorithm for satisfying the fixed outline constraint. The proposed methodology is implemented in the layout of InternationalWorkshop on Logic and Synthesis (IWLS) benchmarks circuits for experimental purpose. The resulting floorplans were iteratively optimized for optimal reduction of wirelength and congestion. Experimental results show that the proposed methodology outperforms existing state-of-the-art approaches in wirelength reduction by about 18.65% and in congestion reduction by around 63%, while delivering the 30.35% power consumption.


2013 ◽  
Vol E96.C (4) ◽  
pp. 538-545
Author(s):  
Takeshi OKUMOTO ◽  
Kumpei YOSHIKAWA ◽  
Makoto NAGATA

Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 454
Author(s):  
You Wang ◽  
Yu Mao ◽  
Qizheng Ji ◽  
Ming Yang ◽  
Zhaonian Yang ◽  
...  

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.


2020 ◽  
Vol 11 (1) ◽  
pp. 129
Author(s):  
Po-Yu Kuo ◽  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Jin-Fa Lin

The conventional shift register consists of master and slave (MS) latches with each latch receiving the data from the previous stage. Therefore, the same data are stored in two latches separately. It leads to consuming more electrical power and occupying more layout area, which is not satisfactory to most circuit designers. To solve this issue, a novel cross-latch shift register (CLSR) scheme is proposed. It significantly reduced the number of transistors needed for a 256-bit shifter register by 48.33% as compared with the conventional MS latch design. To further verify its functions, this CLSR was implemented by using TSMC 40 nm CMOS process standard technology. The simulation results reveal that the proposed CLSR reduced the average power consumption by 36%, cut the leakage power by 60.53%, and eliminated layout area by 34.76% at a supply voltage of 0.9 V with an operating frequency of 250 MHz, as compared with the MS latch.


Author(s):  
Adam Barylski ◽  
Mariusz Deja

Silicon wafers are the most widely used substrates for fabricating integrated circuits. A sequence of processes is needed to turn a silicon ingot into silicon wafers. One of the processes is flattening by lapping or by grinding to achieve a high degree of flatness and parallelism of the wafer [1, 2, 3]. Lapping can effectively remove or reduce the waviness induced by preceding operations [2, 4]. The main aim of this paper is to compare the simulation results with lapping experimental data obtained from the Polish producer of silicon wafers, the company Cemat Silicon from Warsaw (www.cematsil.com). Proposed model is going to be implemented by this company for the tool wear prediction. Proposed model can be applied for lapping or grinding with single or double-disc lapping kinematics [5, 6, 7]. Geometrical and kinematical relations with the simulations are presented in the work. Generated results for given workpiece diameter and for different kinematical parameters are studied using models programmed in the Matlab environment.


2013 ◽  
Vol 756-759 ◽  
pp. 3466-3470
Author(s):  
Xu Min Song ◽  
Qi Lin

The trajcetory plan problem of spece reandezvous mission was studied in this paper using nolinear optimization method. The optimization model was built based on the Hills equations. And by analysis property of the design variables, a transform was put forward , which eliminated the equation and nonlinear constraints as well as decreaseing the problem dimensions. The optimization problem was solved using Adaptive Simulated Annealing (ASA) method, and the rendezvous trajectory was designed.The method was validated by simulation results.


2018 ◽  
Vol 6 (11) ◽  
pp. 299-306
Author(s):  
K. Lenin

This paper presents Hybridization of Simulated Annealing with Nelder-Mead algorithm (SN) is proposed to solve optimal reactive power problem. The proposed Hybridized - Simulated Annealing, Nelder-Mead algorithm starts with a prime solution, which is produced arbitrarily and then the solution is disturbed into partitions. The vicinity zone is created, arbitrary numbers of partitions are selected and variables modernizing procedure is started in order to create a trail of neighbour solutions. This procedure helps the SN algorithm to explore the region around an existing iterate solution. The Nelder- Mead algorithm is used in the last stage in order to progress the most excellent solution found so far and hasten the convergence in the closing stage. The proposed Hybridization of Simulated Annealing with Nelder-Mead algorithm (SN) has been tested in standard IEEE 57,118 bus systems and simulation results show the superior performance of the proposed SN algorithm in reducing the real power loss and voltage profiles are within the limits.


Author(s):  
Gianluca Cornetta ◽  
David J. Santos ◽  
José Manuel Vázquez

The modern wireless communication industry is demanding transceivers with a high integration level operating in the gigahertz frequency range. This, in turn, has prompted intense research in the area of monolithic passive devices. Modern fabrication processes now provide the capability to integrate onto a silicon substrate inductors and capacitors, enabling a broad range of new applications. Inductors and capacitors are the core elements of many circuits, including low-noise amplifiers, power amplifiers, baluns, mixers, and oscillators, as well as fully-integrated matching networks. While the behavior and the modeling of integrated capacitors are well understood, the design of an integrated inductor is still a challenging task since its magnetic behavior is hard to predict accurately. As the operating frequency approaches the gigahertz range, device nonlinearities, coupling effects, and skin effect dominate, making difficult the design of critical parameters such as the self-resonant frequency, the quality factor, and self and mutual inductances. However, despite the parasitic effects and the low quality-factor, integrated inductors still allow for the implementation of integrated circuits with improved performances under low supply voltage. In this chapter, the authors review the technology behind monolithic capacitors and inductors on silicon substrate for high-frequency applications, with major emphasis on physical implementation and modeling.


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