scholarly journals A Curvature Compensation Technique for Low-Voltage Bandgap Reference

Energies ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 7193
Author(s):  
Jie Shen ◽  
Houpeng Chen ◽  
Shenglan Ni ◽  
Zhitang Song
Keyword(s):  
Temperature Coefficient ◽  
Low Voltage ◽  
Negative Temperature ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Positive Temperature ◽  
Voltage Reference ◽  
Collector Current ◽  
Output Resistance ◽  
Compensation Technique

Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient current) and ICTAT (negative temperature coefficient current) to the output resistance, the first-order compensation bandgap voltages can be obtained. Meanwhile, the third high-order compensation current is also superimposed on the same resistance. We make use of the collector current of the bipolar transistor to compensate for the nonlinear term of VBE. The simulation results show that TC (temperature coefficient) of the first circuit reference could be reduced from 29.1 × 10−6/°C to 5.71 × 10−6/°C over the temperature range of −25 to 125 °C after temperature compensation. The second one could be reduced from 17 × 10−6/°C to 5.22 × 10−6/°C.

Robust True LDO Linear Voltage Regulator and Digitally Trimmable Buffered Precision Voltage Reference for High-Temperature, Low-Voltage Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000096-000103
Author(s):  
Yoann Dusé ◽  
Fabien Laplace ◽  
Nicolas Joubert ◽  
Xavier Montmayeur ◽  
Noureddine Zitouni ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Coefficient ◽  
Low Voltage ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Voltage Regulator ◽  
Voltage Reference ◽  
Soft Start ◽  
Wide Range ◽  
Latch Up

We present in this paper two new products for high-temperature, low-voltage (2.8V to 5.5V) power management applications. The first product is an original implementation of a monolithic low dropout regulator (XTR70010), able to deliver up to 1A at 230°C with less than 1V of dropout. This new voltage regulator can source an output current level up to 1.5A. The regulated output voltage can be selected among 32 preset values from 0.5V to 3.6V in steps of 100mV, or it can be obtained with a pair of external resistors. The circuit integrates complex analog and digital control blocks providing state of the art features such as UVLO protection, chip enable control, soft start-up and soft shut-down, hiccup short-circuit protection, customer selectable thermal shut-down, input power supply protection, output overshoot remover and stability over an extremely wide range of load capacitances. The circuit offers a fair ±2% absolute accuracy and is guaranteed latch-up free. The second product is an advanced high-temperature, low-power, digitally trimmable voltage reference (XTR75020). Thanks to a custom, 1-wire serial interface, the absolute precision and the temperature coefficient can be adjusted in order to obtain an accuracy better than 0.5% with a temperature coefficient bellow ±20ppm/°C. On-chip OTP memory for trimming of absolute value and temperature coefficient makes the circuit extremely accurate and almost insensitive to drifts over time and temperature. The circuit features a class AB output buffer able to source or sink up to 5mA and remains stable with any load capacitance up to 50μF. The XTR75020 has nine preset possible output voltages. The source and sink short circuit current always remains bellow 25mA. The quiescent current consumption is 300μA typical at 230°C while the standby current is, in all cases, under 20μA. Both devices are designed on a latch-up free silicon-on-insulator process.

Current-transport mechanism in Au/V-doped PVC+TCNQ/p-Si structures

2015 ◽  
Vol 29 (13) ◽  
pp. 1550076 ◽  
Author(s):  
H. Tecimer ◽  
Ö. Vural ◽  
A. Kaya ◽  
Ş. Altındal
Keyword(s):  
Temperature Coefficient ◽  
Transport Mechanism ◽  
Forward Bias ◽  
Thermionic Emission ◽  
Negative Temperature ◽  
Positive Temperature ◽  
Current Transport ◽  
Insulator Layer ◽  
Zero Bias ◽  
Current Transport Mechanism

The forward and reverse bias current–voltage (I–V) characteristics of Au/V-doped polyvinyl chloride+Tetracyanoquino dimethane/porous silicon (PVC+TCNQ/p-Si) structures have been investigated in the temperature range of 160–340 K. The zero bias or apparent barrier height (BH) (Φ ap = Φ Bo ) and ideality factor (n ap = n) were found strongly temperature dependent and the value of n ap decreases, while the Φ ap increases with the increasing temperature. Also, the Φ ap versus T plot shows almost a straight line which has positive temperature coefficient and it is not in agreement with the negative temperature coefficient of ideal diode or forbidden bandgap of Si (α Si = -4.73×10-4 eV/K ). The high value of n cannot be explained only with respect to interfacial insulator layer and interface traps. In order to explain such behavior of Φ ap and n ap with temperature, Φ ap Versus q/2kT plot was drawn and the mean value of (Φ Bo ) and standard deviation (σs) values found from the slope and intercept of this plot as 1.176 eV and 0.152 V, respectively. Thus, the modified ( ln (Io/T2)-(qσs)2/2(kT)2 versus (q/kT) plot gives the Φ Bo and effective Richardson constant A* as 1.115 eV and 31.94 A ⋅(cm⋅K)-2, respectively. This value of A*( = 31.94 A⋅( cm ⋅K)-2) is very close to the theoretical value of 32 A ⋅(cm⋅K)-2 for p-Si. Therefore, the forward bias I–V–T characteristics confirmed that the current-transport mechanism (CTM) in Au/V-doped PVC+TCNQ/p-Si structures can be successfully explained in terms of the thermionic emission (TE) mechanism with a Gaussian distribution (GD) of BHs at around mean BH.

Temperature Dependence of Impact Ionization Coefficients in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 461-466 ◽  
Author(s):  
Hiroki Niwa ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Breakdown Voltage ◽  
Elevated Temperatures ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Ionization Coefficients

Impact ionization coefficients of 4H-SiC were measured at room temperature and at elevated temperatures up to 200°C. Photomultiplication measurement was done in two complementary photodiodes to measure the multiplication factors of holes (Mp) and electrons (Mn), and ionization coefficients were extracted. Calculated breakdown voltage using the obtained ionization coefficients showed good agreement with the measured values in this study, and also in other reported PiN diodes and MOSFETs. In high-temperature measurement, breakdown voltage exhibited a positive temperature coefficient and multiplication factors showed a negative temperature coefficient. Therefore, extracted ionization coefficient has decreased which can be explained by the increase of phonon scattering. The calculated temperature dependence of breakdown voltage agreed well with the measured values not only for the diodes in this study, but also in PiN diode in other literature.

A 16.4 nW, Sub-1 V, Resistor-Less Voltage Reference with BJT Voltage Divider

2018 ◽  
Vol 27 (13) ◽  
pp. 1850206 ◽  
Author(s):  
Qingshan Yang ◽  
Peiqing Han ◽  
Niansong Mei ◽  
Zhaofeng Zhang
Keyword(s):  
Low Voltage ◽  
Supply Voltage ◽  
Voltage Divider ◽  
Total Power ◽  
Cmos Process ◽  
Operating Voltage ◽  
Voltage Reference ◽  
Ultra Low Power ◽  
Silicon Area ◽  
Total Power Consumption

A 16.4[Formula: see text]nW, sub-1[Formula: see text]V voltage reference for ultra-low power low voltage applications is proposed. This design reduces the operating voltage to 0.8[Formula: see text]V by a BJT voltage divider and decreases the silicon area considerably by eliminating resistors. The PTAT and CTAT are based on SCM structures and a scaled-down [Formula: see text], respectively, to improve the process insensitivity. This work is fabricated in 0.18[Formula: see text][Formula: see text]m CMOS process with a total area of 0.0033[Formula: see text]mm2. Measured results show that it works properly for supply voltage from 0.8[Formula: see text]V to 2[Formula: see text]V. The reference voltage is 467.2[Formula: see text]mV with standard deviation ([Formula: see text]) being 12.2 mV and measured TC at best is 38.7[Formula: see text]ppm/[Formula: see text]C ranging from [Formula: see text]C to 60[Formula: see text]C. The total power consumption is 16.4[Formula: see text]nW under the minimum supply voltage at 27[Formula: see text]C.

Influence of CF on PTC Properties of LDPE/Carbon Fiber Composites

2014 ◽  
Vol 1056 ◽  
pp. 20-24 ◽  
Author(s):  
Wen Long Zhang ◽  
Yu Ping Wan ◽  
Ya Jie Dai ◽  
Yan Gao ◽  
Chen Wang ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Temperature Coefficient ◽  
Low Cost ◽  
Negative Temperature ◽  
Treatment Method ◽  
Positive Temperature Coefficient ◽  
Carbon Fiber Composites ◽  
Positive Temperature ◽  
Short Lifespan ◽  
Cost Characteristics

PO/CB (Polyolefin/Carbon Black) PTC (Positive Temperature Coefficient) composite with easy processing, low cost characteristics has been applied widely. But it suffered from a relatively short lifespan because of its NTC (Negative Temperature Coefficient) effect and low PTC intensity. In order to overcome this shortcoming, the CF was calcination-treated to prepare LDPE/CF (Low Density Polyethylene/Carbon Fiber) PTC composite. Influence of length, content and treatment method of CF on PTC properties of composites was investigated. Results showed that 0.5mm length CF in composites had higher PTC intensity than that of 2mm length CF. PTC intensity of the composites was enhanced more effectively by calcination treated CF compared to the untreated CF. The maximum PTC intensity was 8.1 when CF’s content was at 8wt%.

Realization of Fractional-Order Double-Scroll Chaotic System Using Operational Transconductance Amplifier (OTA)

2017 ◽  
Vol 27 (01) ◽  
pp. 1850006 ◽  
Author(s):  
Mohammad Rafiq Dar ◽  
Nasir Ali Kant ◽  
Farooq Ahmad Khanday
Keyword(s):  
Fractional Order ◽  
Chaotic System ◽  
Low Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Operational Transconductance Amplifiers ◽  
System A ◽  
Transconductance Amplifier ◽  
Theoretical Predictions

Realization of fractional-order double-scroll chaotic system using Operational Transconductance Amplifiers (OTAs) as active elements are presented in this paper. The fractional-order double-scroll chaotic system has been studied before as well using passive RC-ladder and tree-based structures but in this paper the requisite fractional-order integration has been accomplished through an integer-order multiple-feedback topology. As compared to double or multiple scroll chaotic systems existing in the open literature, the proposed realization offers the advantages of (a) low-voltage implementation, (b) integrablity as the design is resistor- and inductor-less and only grounded components have been employed in the design, and, (c) electronic tunability of the fractional order, time-constants and gain factors. In order to demonstrate the usefulness of the chaotic system, a simple secure message communication system has been designed and verified for its operation. The theoretical predictions of the proposed implementations have been verified by using 0.35[Formula: see text][Formula: see text]m complementary metal oxide semiconductor (CMOS) process file provided by Austrian Micro System (AMS).

scholarly journals Development of Auto Thermal Control Device For Space Air - Conditioning

2021 ◽  
pp. 193-204
Author(s):  
Akinde Olusola Kunle ◽  
Maduako Kingsley Obinna ◽  
Akande, Kunle Akinyinka ◽  
Adeaga Oyetunde Adeoye
Keyword(s):  
Temperature Coefficient ◽  
Room Temperature ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
Thermal Control ◽  
Positive Temperature Coefficient ◽  
Control Device ◽  
Thermal Source ◽  
Positive Temperature ◽  
Ntc Thermistor

Auto Thermal Control device is an electronic based device which employs the application of temperature sensors to controlling household appliances without human interference directly. In this work, thermal source is used to regulate electrical fan and room heater depending on ambient temperature. The room heater, which is adjusted to a set temperature, switches ‘ON’ when the temperature of a room is low (cold). While the same is switches ‘OFF’ with increase in the room temperature. This triggers ‘ON’ an electric fan at different speeds, and thus cools the room. A temperature sensor, tthermistor, monitors change in room temperature. Two types of thermistor exists: Positive Temperature Coefficient, PTC. An increasee in the resistance of PTC results in increasee in temperature). In the Negative Temperature Coefficient, NTC; a decreasee in resistance yields to temperature increase. This article explored a NTC thermistor. The design could be a ready product in the market of the developing nation where environmental automation is yet fully deployed.

scholarly journals Temperature Self-Compensated Strain Sensors based on MWCNT-Graphene Hybrid Nanocomposite

2019 ◽  
Vol 3 (4) ◽  
pp. 96 ◽  
Author(s):  
Rajarajan Ramalingame ◽  
Jose Roberto Bautista-Quijano ◽  
Danrlei de Farias Alves ◽  
Olfa Kanoun
Keyword(s):  
Temperature Coefficient ◽  
Carbon Nanomaterials ◽  
Negative Temperature ◽  
Positive Temperature Coefficient ◽  
Gauge Factor ◽  
Positive Temperature ◽  
Hybrid Nanocomposite ◽  
Resistance Change ◽  
Influence Of Temperature ◽  
Dispersion Quality

Sensors based on carbon nanomaterials are gaining importance due to their tunable properties and their potentially outstanding sensing performance. Despite their advantages, carbon-based nanomaterial sensors are prone to cross-sensitivities with environmental factors like temperature. Thus, to reduce the temperature influence on the sensing material, compensation and correction procedures are usually considered. These methods may require the use of additional sensors which can themselves be subject to residual errors. Hence, a more promising approach consists of synthesizing a material that is capable of self-compensating for the influence of temperature. In this study, a hybrid nanocomposite based on multi-walled carbon nanotubes (MWCNT) and graphene is proposed, which can compensate, by itself, for the influence of temperature on the material conductivity. The hybrid nanocomposite material uses the different temperature behavior of MWCNTs, which have a negative temperature coefficient, and graphene, which has a positive temperature coefficient. The influence of the material ratio and dispersion quality are investigated in this work. Material composition and dispersion quality are analyzed using Raman spectroscopy and scanning electron microscopy (SEM). A composition of 70% graphene and 30% MWCNT exhibits a nearly temperature-independent hybrid nanocomposite with a sensitivity of 0.022 Ω/°C, corresponding to a resistance change of ~1.2 Ω for a temperature range of 25 to 80 °C. Additionally, a simple investigation of the strain sensing behavior of the hybrid material is also presented. The hybrid nanocomposite-based, thin-film strain sensor exhibits good stability over 100 cycles and a significantly high gauge factor, i.e., 16.21.

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