scholarly journals Optical Properties of Bulk Single-Crystal Diamonds at 80–1200 K by Vibrational Spectroscopic Methods

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7435
Author(s):  
Zitao Shi ◽  
Qilong Yuan ◽  
Yuezhong Wang ◽  
Kazuhito Nishimura ◽  
Guojian Yang ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Ftir Spectroscopy ◽  
Chemical Vapor ◽  
Optical Transmittance ◽  
Cvd Diamond ◽  
Bulk Single Crystal ◽  
Sensing Applications ◽  
Optical Applications ◽  
Bulk Diamond

Bulk diamonds show great potential for optical applications such as for use in infrared (IR) windows and temperature sensors. The development of optical-grade bulk diamond synthesis techniques has facilitated its extreme applications. Here, two kinds of bulk single-crystal diamonds, a high-pressure and high-temperature (HPHT) diamond and a chemical vapor deposition (CVD) diamond, were evaluated by Raman spectroscopy and Fourier Transform Infra-Red (FTIR) spectroscopy at a range of temperatures from 80 to 1200 K. The results showed that there was no obvious difference between the HPHT diamond and the CVD diamond in terms of XRD and Raman spectroscopy at 300–1200 K. The measured nitrogen content was ~270 and ~0.89 ppm for the HPHT diamond and the CVD diamond, respectively. The moderate nitrogen impurities did not significantly affect the temperature dependence of Raman spectra for temperature-sensing applications. However, the nitrogen impurities greatly influence FTIR spectroscopy and optical transmittance. The CVD diamond showed higher transmittance, up to 71% with only a ~6% drop at temperatures as high as 873 K. This study shows that CVD bulk diamonds can be used for IR windows under harsh environments.

scholarly journals Nitrogen and Silicon Defect Incorporation during Homoepitaxial CVD Diamond Growth on (111) Surfaces

2015 ◽  
Vol 1734 ◽  
Author(s):  
Samuel L. Moore ◽  
Yogesh K. Vohra
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Nitrogen Concentration ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Diamond Growth ◽  
Defect Center ◽  
Defect Centers ◽  
Single Crystal Diamond

ABSTRACTChemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. Altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

Hydrogen and Hydrogen-Related Defects in CVD Diamond

1998 ◽  
Vol 513 ◽  
Author(s):  
K. M. McNamara Rutledge
Keyword(s):  
Magnetic Resonance ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Active Hydrogen ◽  
Paramagnetic Resonance ◽  
Hydrogen Incorporation ◽  
Chemical Vapor Deposited ◽  
Optical Applications ◽  
Electron Paramagnetic ◽  
Non Destructive

ABSTRACTHydrogen is a detrimental impurity in many chemical vapor deposited (CVD) materials, particularly those involved in electronic or optical applications. For example, active hydrogen defects have been observed in materials such as silicon, Si, gallium arsenide, GaAs, and diamond, C, thin films. Hydrogen and its related defects can be identified, quantified, and observed using magnetic resonance techniques. These techniques allow a unique quantitative, non-destructive view of hydrogen in the solid-state. Nuclear magnetic resonance (NMR) is used to study hydrogenated defects directly, while electron paramagnetic resonance (EPR) is used to observe hydrogen associated with paramagnetic defects. These observations can enhance our understanding of the effects of hydrogen incorporation on the properties of such materials.

scholarly journals Chemical vapor transport growth of bulk black phosphorus single crystals

2020 ◽  
Vol 7 (15) ◽  
pp. 2867-2879
Author(s):  
Muhammad Khurram ◽  
Zhaojian Sun ◽  
Ziming Zhang ◽  
Qingfeng Yan
Keyword(s):  
Single Crystal ◽  
Recent Progress ◽  
Reaction System ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Black Phosphorus ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Bulk Single Crystal ◽  
Nucleation And Growth Mechanism

Recent progress in growth of bulk black phosphorus single crystal by CVT method has been briefly reviewed with the emphasis on reaction system, nucleation and growth mechanism as well as advancement in growth of doped BP bulk single crystal.

Growth and characterization of combined single-crystalline and polycrystalline CVD diamond wafer

2015 ◽  
Vol 1734 ◽  
Author(s):  
A.L. Vikharev ◽  
A.B. Muchnikov ◽  
D.B. Radishev ◽  
V.A. Isaev ◽  
O.A. Ivanov ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Annealing Process ◽  
Single Crystalline ◽  
Chemical Vapor Deposited ◽  
Thermal Annealing Process ◽  
Industrial Use

ABSTRACTThe study of combined single-crystalline and polycrystalline chemical vapor deposited (CVD) diamond wafers is reported. Combined CVD diamond wafers up to 75 mm in diameter were grown, which consist of great number of single-crystalline diamond sections grafted in a polycrystalline diamond matrix. The grown combined CVD wafers were characterized by the Raman spectroscopy. It was shown that in the grafting process, the single- and polycrystalline areas of the combined wafer undergo insignificant stresses, which can be released during the thermal annealing process. Fabricated combined CVD diamond can be used in various applications that employ unique properties of diamond and potentially suitable for industrial use.

Tribological Properties of CVD Diamond Films against Graphite

2016 ◽  
Vol 689 ◽  
pp. 86-90
Author(s):  
Xue Cai Lei ◽  
Ke Pang
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Raman Spectroscopy ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Frictional Coefficients ◽  
Hot Filament ◽  
Scanning Electron

In this investigation, micro crystalline diamond (MCD) and nanocrystalline diamond (NCD) films are deposited on cemented carbide (WC-Co) balls by hot filament chemical vapor deposition (HFCVD) technique. After deposition, MCD and NCD films are characterized by field emission scanning electron microscopy (FESEM) and Raman spectroscopy. Then frictional tests are carried out between CVD diamond coated balls and graphite. The results show that the MCD-graphite and NCD-graphite tribo-pairs exhibit comparable frictional coefficients, while the wear rate of graphite in MCD-graphite working pair is much higher than that of graphite in NCD-graphite working pair. Furthermore, the element oxygen is detected in the wear groove of graphite, suggesting the oxycarbide of working materials at the increased temperature due to the heat generated from the mechanical friction.

Raman spectroscopy and Fermi resonance in Mn-doped ZnO bulk single crystal

2010 ◽  
Vol 374 (39) ◽  
pp. 4054-4056 ◽  
Author(s):  
B.N. Mavrin ◽  
L.N. Demyanets ◽  
R.M. Zakalukin
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Fermi Resonance ◽  
Bulk Single Crystal ◽  
Doped Zno ◽  
Mn Doped

Morphology and Quantitative Nitrogen Impurity Measurements in Homoepitaxial Chemical Vapor Deposited Diamond

1996 ◽  
Vol 441 ◽  
Author(s):  
S. A. Catledge ◽  
Y. K. Vohra ◽  
C. Yan ◽  
H. T. Tohver
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Diamond Film ◽  
Surface Defects ◽  
Microwave Plasma ◽  
Raman Band ◽  
Chemical Vapor ◽  
Nitrogen Vacancy ◽  
Grown Film ◽  
Nitrogen Impurity

AbstractA thick (130 im) homoepitaxial diamond film was grown on a polished, single crystal {100} oriented natural type Ila diamond circular plate using high density microwave plasma chemical vapor deposition (MPCVD). The as-grown film shows facets around its perimeter, approaching the form of a cubo-octahedral crystal. The plate dimensions increased from 1.50 mm diameter and 0.25 mm thickness to 1.64 mm diameter and 0.38 mm thickness, corresponding to a growth rate of nearly 11 μm per hour. The substrate temperature during growth was approximately 900 C. The film was characterized by optical microscopy, Raman spectroscopy, photoluminescence spectroscopy (PL), and electron paramagnetic resonance (EPR) before and after deposition. The surface morphology of the as-grown film shows large growth steps and a few scattered penetration twins. The diamond film is transparent except for localized regions containing the twin defects. Raman spectroscopy shows a strong diamond peak at 1332 cm−1 superimposed on a background fluorescence. A broad Raman band at 1550 cm−1 is present on the surface defects and is indicative of an amorphous network of sp2-bonded carbon. The luminescence of the film reveals the presence of a nitrogen-vacancy pair. The homoepitaxially-grown diamond layer also exhibits the P1 substitutional nitrogen impurity with a concentration of 8 parts per million (ppm) as determined by EPR. No nitrogen impurities were detected in the original substrate before deposition. EPR is also used to confirm the single crystal nature of the grown diamond.

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