scholarly journals Fabrication of Cu2ZnSnS4 Thin Films from Ball-Milled Nanoparticle inks under Various Annealing Temperatures

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1615 ◽  
Author(s):  
Xianfeng Zhang ◽  
Engang Fu ◽  
Maoxi Zheng ◽  
Yuehui Wang
Keyword(s):  
Raman Spectrum ◽  
Grain Growth ◽  
Annealing Temperature ◽  
Secondary Phase ◽  
Atomic Ratio ◽  
Secondary Phases ◽  
Photovoltaic Properties ◽  
Annealing Temperatures ◽  
Milling Method ◽  
Nanocrystal Inks

Cu2ZnSnS4 (CZTS) has been recognized as a promising thin-film absorber material of chalcopyrite-related solar cells. A two-stage method for fabricating CZTS films using CZTS nanoparticles was developed. Nanocrystal inks fabricated by a ball-milling method was utilized to °C deposit CZTS precursors by spin-coating approach. The CZTS precursors were annealed in the sulfur atmosphere under different annealing temperatures ranging from 550 °C to 650 °C. Influences of annealing temperature on grain growth, composition, crystallinity, and photovoltaic properties of CZTS films were characterized. With the increase of annealing temperature, grain growth was enhanced, while the sulfur atomic ratio fist increased then decreased. The crystallinity of the films was significantly improved after the annealing, and the obvious peak of the secondary phase of ZnS, were observed from the X-ray diffraction results, when the annealing temperature increased to 625 °C. However, the secondary phase was not detected from the surface Raman spectrum. Through comparing the Raman spectrum of different areas of the CZTS film, secondary phases of ZnS and SnS were observed, indicating the decomposition of CZTS films, due to the high temperature. The highest conversion efficiency of 7.5% was obtained when the annealing temperature was 600 °C.

scholarly journals Effect of annealing temperature on the microstructure of hyperduplex stainless steels

2019 ◽  
Vol 20 (2) ◽  
pp. 1-6
Author(s):  
Doris Ivette Villalobos Vera ◽  
Ivan Mendoza Bravo
Keyword(s):  
Stainless Steels ◽  
Sigma Phase ◽  
Annealing Temperature ◽  
Secondary Phase ◽  
Heat Treatments ◽  
Secondary Phases ◽  
Annealing Heat Treatment ◽  
Secondary Austenite ◽  
Conventional Annealing ◽  
Annealing Heat

Samples of hyperduplex stainless steels were produced experimentally and exposed to different conventional annealing heat treatments in order to obtain the microstructural balance of 50% ferrite and 50% austenite. To differentiate the ferrite and austenite from any secondary phase, selective etching was used and quantitative metallography was performed to measure the percentage of phases. Results showed that conventional annealing heat treatments promote the transformation from ferrite to sigma phase and secondary austenite, suggesting a higher occurrence of sigma phase in the experimental hyperduplex alloys compared to other duplex alloys due to the superior content of chromium and molybdenum. On the other hand, a balanced microstructure free of secondary phases was accomplished increasing the temperature of the annealing heat treatment, which allowed the transformation of ferrite into austenite during cooling.

Thermal Stability and Mechanical Properties of Nanocrystalline L12 Al3Hf and (Al+12.5 at.%Zn)3Hf Prepared by MA and SPS

2004 ◽  
Vol 449-452 ◽  
pp. 809-812 ◽  
Author(s):  
Chang Won Kang ◽  
Hee Sup Jang ◽  
Seon Jin Kim
Keyword(s):  
Mechanical Properties ◽  
Thermal Stability ◽  
Fracture Toughness ◽  
Phase Transformation ◽  
Grain Growth ◽  
Annealing Temperature ◽  
Annealing Temperatures ◽  
Grain Sizes ◽  
Plasma Sintering ◽  
Spark Plasma

Thermal stability and mechanical properties of L12 Al3Hf and (Al+12.5 at.%Zn))3Hf synthesized by mechanical alloying(MA) and spark plasma sintering(SPS) were investigated. Nanocrystalline L12 phase was produced after MA for 8 and 10 hrs in Al3Hf and (Al+12.5 at.%Zn))3Hf powders, respectively. The grain sizes were reduced to about 10 nm in both systems after MA for 20 hrs. After SPS, L12 phase was maintained only in Zn added system. In (Al+12.5 at.%Zn))3Hf, L12 to D023 phase transformation was started at about 850°C and finished at about 1150°C Microhardness was decreased with increasing the annealing temperature while fracture toughness was increased due to the grain growth. Fracture toughness of (Al+12.5 at.%Zn))3Hf was greater than that of Al3Hf in all annealing temperatures. Fracture toughness of (Al+12.5 at.%Zn))3Hf after annealing at 1200°C was about 5.38 MPam1/2.

scholarly journals INFLUENCE OF STRUCTURAL FEATURES OF ZNO FILMS ON OPTICAL AND PHOTOELECTRIC CHARACTERISTICS OF INVERTED POLYMER SOLAR ELEMENTS

2021 ◽  
Vol 18 (2) ◽  
pp. 40-46
Author(s):  
А.К. Zeinidenov ◽  
Keyword(s):  
Solar Cells ◽  
Zinc Acetate ◽  
Annealing Temperature ◽  
Charge Carriers ◽  
Zno Films ◽  
Acetate Solution ◽  
Photovoltaic Properties ◽  
Strong Light ◽  
Annealing Temperatures ◽  
Zinc Acetate Solution

In this work we investigated the effect of preliminary annealing of zinc acetate solution films on the morphology, structure, optical properties of the formed ZnO films and also on the photovoltaic properties of polymer solar cells based on the obtained ZnO films. It was found that the pre-annealing temperature significantly affects the morphology and structure of the obtained ZnO films. At pre-annealing temperatures below 200 oC the films have a strongly relief morphology (wrinkled morphology), while at pre-annealing temperatures above 200 oC the surface morphology of the films is smooth. The relief of ZnO films affects the photocurrent density of solar cells. Cells based on ZnO films with wrinkled morphology showed a higher photocurrent compared to smooth morphology, which is due to strong light scattering and, as a result, the optical path of light in the photoactive layer is increased due to multiple reflection of light in the wrinkled structure of ZnO. In addition, with increasing pre-annealing temperature, the photovoltage of solar cells and the rate of recombination of charge carriers increases, but the diffusion coefficient of charge carriers decreases, which indicates an increase in the density of defects in the crystal lattice of ZnO. Thus, it has been shown that smooth or highly relief thin ZnO films with controlled properties can be obtained from a zinc acetate solution.

scholarly journals Fabrication of Cu2ZnSnS4 (CZTS) Nanoparticle Inks for Growth of CZTS Films for Solar Cells

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 336 ◽  
Author(s):  
Xianfeng Zhang ◽  
Engang Fu ◽  
Yuehui Wang ◽  
Cheng Zhang
Keyword(s):  
Short Circuit ◽  
Annealed Film ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Secondary Phases ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Coating Method ◽  
Milling Method ◽  
Nanocrystal Inks

Cu2ZnSnS4 (CZTS) is a promising candidate material for photovoltaic applications; hence, ecofriendly methods are required to fabricate CZTS films. In this work, we fabricated CZTS nanocrystal inks by a wet ball milling method, with the use of only nontoxic solvents, followed by filtration. We performed centrifugation to screen the as-milled CZTS and obtain nanocrystals. The distribution of CZTS nanoparticles during centrifugation was examined and nanocrystal inks were obtained after the final centrifugal treatment. The as-fabricated CZTS nanocrystal inks were used to deposit CZTS precursors with precisely controlled CZTS films by a spin-coating method followed by a rapid high pressure sulfur annealing method. Both the grain growth and crystallinity of the CZTS films were promoted and the composition was adjusted from S poor to S-rich by the annealing. XRD and Raman characterization showed no secondary phases in the annealed film, the absence of the detrimental phases. A solar cell efficiency of 6.2% (open circuit voltage: Voc = 633.3 mV, short circuit current: Jsc = 17.6 mA/cm2, and fill factor: FF = 55.8%) with an area of 0.2 cm2 was achieved based on the annealed CZTS film as the absorber layer.

Improvement of the Specific Contact Resistance on P-Type 4H-SiC by Using a Highly P-Typed Doped 4H-SiC Layer Selectively Grown by VLS Transport

2014 ◽  
Vol 806 ◽  
pp. 57-60
Author(s):  
Nicolas Thierry-Jebali ◽  
Arthur Vo-Ha ◽  
Davy Carole ◽  
Mihai Lazar ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Process Condition ◽  
Specific Contact Resistance ◽  
High Doping Level ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
P Type

This work reports on the improvement of ohmic contacts made on heavily p-type doped 4H-SiC epitaxial layer selectively grown by Vapor-Liquid-Solid (VLS) transport. Even before any annealing process, the contact is ohmic. This behavior can be explained by the high doping level of the VLS layer (Al concentration > 1020 cm-3) as characterized by SIMS profiling. Upon variation of annealing temperatures, a minimum value of the Specific Contact Resistance (SCR) down to 1.3x10-6 Ω.cm2 has been obtained for both 500 °C and 800 °C annealing temperature. However, a large variation of the SCR was observed for a same process condition. This variation is mainly attributed to a variation of the Schottky Barrier Height.

Structural Changes of UHV Deposited Titanium Thin Films in Presence of Oxygen Flow and Temperature

2011 ◽  
Vol 110-116 ◽  
pp. 1094-1098
Author(s):  
Haleh Kangarlou ◽  
Mehdi Bahrami Gharahasanloo ◽  
Akbar Abdi Saray ◽  
Reza Mohammadi Gharabagh
Keyword(s):  
Room Temperature ◽  
Structural Changes ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Oxygen Flow ◽  
Glass Substrates ◽  
Annealing Temperatures ◽  
Titanium Thin Films ◽  
Deposition Angle ◽  
Ti Films

Ti films of same thickness, and near normal deposition angle, and same deposition rate were deposited on glass substrates, at room temperature, under UHV conditions. Different annealing temperatures as 393K, 493K and 593K with uniform 8 cm3/sec, oxygen flow, were used for producing titanium oxide layers. Their nanostructures were determined by AFM and XRD methods. Roughness of the films changed due to annealing process. The gettering property of Ti and annealing temperature can play an important role in the nanostructure of the films.

scholarly journals Experimental Investigation on Micro Deep Drawing of Stainless Steel Foils with Different Microstructural Characteristics

2021 ◽  
Vol 34 (1) ◽  
Author(s):  
Jingwei Zhao ◽  
Tao Wang ◽  
Fanghui Jia ◽  
Zhou Li ◽  
Cunlong Zhou ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Deep Drawing ◽  
Annealing Temperature ◽  
Localized Deformation ◽  
Microstructural Characteristics ◽  
Height Profile ◽  
Annealing Temperatures ◽  
Micro Deep Drawing ◽  
Profile Distribution

AbstractIn the present work, austenitic stainless steel (ASS) 304 foils with a thickness of 50 µm were first annealed at temperatures ranging from 700 to 1100 ℃ for 1 h to obtain different microstructural characteristics. Then the effects of microstructural characteristics on the formability of ASS 304 foils and the quality of drawn cups using micro deep drawing (MDD) were studied, and the mechanism involved was discussed. The results show that the as-received ASS 304 foil has a poor formability and cannot be used to form a cup using MDD. Serious wrinkling problem occurs on the drawn cup, and the height profile distribution on the mouth and the symmetry of the drawn cup is quite non-uniform when the annealing temperature is 700 ℃. At annealing temperatures of 900 and 950 ℃, the drawn cups are both characterized with very few wrinkles, and the distribution of height profile, symmetry and mouth thickness are uniform on the mouths of the drawn cups. The wrinkling becomes increasingly significant with a further increase of annealing temperature from 950 to 1100 ℃. The optimal annealing temperatures obtained in this study are 900 and 950 ℃ for reducing the generation of wrinkling, and therefore improving the quality of drawn cups. With non-optimized microstructure, the distribution of the compressive stress in the circumferential direction of the drawn foils becomes inhomogeneous, which is thought to be the cause of the occurrence of localized deformation till wrinkling during MDD.

Effect of Intercritical Annealing Temperature on Development of Cold Rolled Dual Phase Steel from Q345 Steel

2013 ◽  
Vol 313-314 ◽  
pp. 693-696
Author(s):  
Ji Yuan Liu ◽  
Fu Xian Zhu ◽  
Shi Cheng Ma
Keyword(s):  
Dual Phase Steel ◽  
Annealing Temperature ◽  
Simulation Experiment ◽  
Intercritical Annealing ◽  
Continuous Annealing ◽  
Dual Phase ◽  
Automotive Applications ◽  
Treatment Procedure ◽  
Annealing Temperatures ◽  
Cold Rolled

Cold rolled dual phase steel was developed from Q345 steel by heat treatment procedure for automotive applications. The ultimate tensile strength was improved about 100MPa higher than the traditional cold-rolled Q345 steel in the continuous annealing simulation experiment. The microstructure presented varied characteristics in different intercritical annealing temperatures; mechanical properties were changed correspondingly as well. The chief discussions are focus on the recrystallization, hardenability of austenite and martensite transformation in the experiment.

Optical Waveguide Formation by Ion Implantation of Ti or Ag

1988 ◽  
Vol 100 ◽  
Author(s):  
D. B. Poker ◽  
D. K. Thomas
Keyword(s):  
Ion Implantation ◽  
Concentration Profile ◽  
Optical Waveguides ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Effective Means ◽  
Complete Removal ◽  
Solid Phase Epitaxy ◽  
Annealing Temperatures ◽  
Residual Damage

ABSTRACTIon implantation of Ti into LINbO3 has been shown to be an effective means of producing optical waveguides, while maintaining better control over the resulting concentration profile of the dopant than can be achieved by in-diffusion. While undoped, amorphous LiNbO3 can be regrown by solid-phase epitaxy at 400°C with a regrowth velocity of 250 Å/min, the higher concentrations of Ti required to form a waveguide (∼10%) slow the regrowth considerably, so that temperatures approaching 800°C are used. Complete removal of residual damage requires annealing temperatures of 1000°C, not significantly lower than those used with in-diffusion. Solid phase epitaxy of Agimplanted LiNbO3, however, occurs at much lower temperatures. The regrowth is completed at 400°C, and annealing of all residual damage occurs at or below 800°C. Furthermore, the regrowth rate is independent of Ag concentration up to the highest dose implanted to date, 1 × 1017 Ag/cm2. The usefulness of Ag implantation for the formation of optical waveguides is limited, however, by the higher mobility of Ag at the annealing temperature, compared to Ti.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

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