scholarly journals Two-dimensional semiconductors pave the way towards dopant-based quantum computing

2018 ◽  
Vol 9 ◽  
pp. 2668-2673 ◽  
Author(s):  
José Carlos Abadillo-Uriel ◽  
Belita Koiller ◽  
María José Calderón
Keyword(s):  
Conduction Band ◽  
Quantum Computer ◽  
2D Materials ◽  
Exchange Interactions ◽  
Lattice Parameter ◽  
Oscillatory Behavior ◽  
Conduction Band Edge ◽  
Two Dimensional ◽  
Tunnel Coupling ◽  
Qubit Operations

Since the proposal in 1998 to build a quantum computer using dopants in silicon as qubits, much progress has been made in the nanofabrication of semiconductors and the control of charge and spins in single dopants. However, an important problem remains unsolved, namely the control over exchange interactions and tunneling between two donors, which presents a peculiar oscillatory behavior as the dopants relative positions vary at the scale of the lattice parameter. Such behavior is due to the valley degeneracy in the conduction band of silicon, and does not occur when the conduction-band edge is at k = 0. We investigate the possibility of circumventing this problem by using two-dimensional (2D) materials as hosts. Dopants in 2D systems are more tightly bound and potentially easier to position and manipulate. Moreover, many of them present the conduction band minimum at k = 0, thus no exchange or tunnel coupling oscillations. Considering the properties of currently available 2D semiconductor materials, we access the feasibility of such a proposal in terms of quantum manipulability of isolated dopants (for single qubit operations) and dopant pairs (for two-qubit operations). Our results indicate that a wide variety of 2D materials may perform at least as well as, and possibly better, than the currently studied bulk host materials for donor qubits.

scholarly journals Silicon-based spin and charge quantum computation

2005 ◽  
Vol 77 (2) ◽  
pp. 201-222 ◽  
Author(s):  
Belita Koiller ◽  
Xuedong Hu ◽  
Rodrigo B. Capaz ◽  
Adriano S. Martins ◽  
Sankar Das Sarma
Keyword(s):  
Quantum Computation ◽  
Quantum Interference ◽  
Quantum Computer ◽  
Building Blocks ◽  
Shallow Donor ◽  
Molecular Ions ◽  
Conduction Band Edge ◽  
Tunnel Coupling ◽  
Qubit Operations ◽  
Silicon Based

Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P+2 substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Recent Advances and Need of Green Synthesis in Two-Dimensional Materials for Energy Conversion and Storage Applications

2021 ◽  
Vol 16 ◽  
Author(s):  
Joice Sophia Ponraj ◽  
Muniraj Vignesh Narayanan ◽  
Ranjith Kumar Dharman ◽  
Valanarasu Santiyagu ◽  
Ramalingam Gopal ◽  
...  
Keyword(s):  
Energy Storage ◽  
Green Synthesis ◽  
2D Materials ◽  
Synthesis Method ◽  
Energy Storage And Conversion ◽  
Two Dimensional ◽  
Severe Problem ◽  
Energy Conversion And Storage ◽  
Energy Application ◽  
The Impact

: Increasing energy crisis across the globe requires immediate solutions. Two-dimensional (2D) materials are in great significance because of its application in energy storage and conversion devices but the production process significantly impacts the environment thereby posing a severe problem in the field of pollution control. Green synthesis method provides an eminent way of reduction in pollutants. This article reviews the importance of green synthesis in the energy application sector. The focus of 2D materials like graphene, MoS2, VS2 in energy storage and conversion devices are emphasized based on supporting recent reports. The emerging Li-ion batteries are widely reviewed along with their promising alternatives like Zn, Na, Mg batteries and are featured in detail. The impact of green methods in the energy application field are outlined. Moreover, future outlook in the energy sector is envisioned by proposing an increase in 2D elemental materials research.

Two-dimensional topological insulators exfoliated from Na3Bi-like Dirac semimetals

2021 ◽  
Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
Topological Insulators ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Dirac Semimetals

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...

Combined Healing and Doping of Transition Metal Dichalcogenides Through Molecular Functionalization

2021 ◽  
Author(s):  
Sai Manoj Gali ◽  
David Beljonne
Keyword(s):  
Transition Metal ◽  
Charge Transport ◽  
2D Materials ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Metal Dichalcogenides

Transition Metal Dichalcogenides (TMDCs) are emerging as promising two-dimensional (2D) materials. Yet, TMDCs are prone to inherent defects such as chalcogen vacancies, which are detrimental to charge transport. Passivation of...

Controllable Synthesis of Ultrathin Layered Transition Metallic Hydroxide/Zeolitic Imidazolate Framework-67 Hybrid Nanosheets for High-Performance Supercapacitors

2021 ◽  
Author(s):  
Chunli Liu ◽  
Yang Bai ◽  
Ji Wang ◽  
Ziming Qiu ◽  
Huan Pang
Keyword(s):  
Charge Transfer ◽  
Energy Conversion ◽  
High Performance ◽  
2D Materials ◽  
Two Dimensional ◽  
Controllable Synthesis ◽  
Zeolitic Imidazolate Framework ◽  
Fast Charge ◽  
Energy Conversion And Storage ◽  
And Storage

Two-dimensional (2D) materials with structures having diverse features are promising for application in energy conversion and storage. A stronger layered orientation can guarantee fast charge transfer along the 2D planes...

scholarly journals Recent advances in mode-locked fiber lasers based on two-dimensional materials

Nanophotonics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 2315-2340 ◽  
Author(s):  
Junli Wang ◽  
Xiaoli Wang ◽  
Jingjing Lei ◽  
Mengyuan Ma ◽  
Cong Wang ◽  
...  
Keyword(s):  
Fiber Lasers ◽  
2D Materials ◽  
Synthesis Methods ◽  
Two Dimensional ◽  
New Materials ◽  
Saturable Absorbers ◽  
Operating Wavelength ◽  
Recent Advances ◽  
Two Dimensional Materials ◽  
Diverse Mode

AbstractDue to the unique properties of two-dimensional (2D) materials, much attention has been paid to the exploration and application of 2D materials. In this review, we focus on the application of 2D materials in mode-locked fiber lasers. We summarize the synthesis methods for 2D materials, fiber integration with 2D materials and 2D materials based saturable absorbers. We discuss the performance of the diverse mode-locked fiber lasers in the typical operating wavelength such as 1, 1.5, 2 and 3 μm. Finally, a summary and outlook of the further applications of the new materials in mode-locked fiber lasers are presented.

Two dimensional CrGa2Se4: A spin-gapless ferromagnetic semiconductor with inclined uniaxial anisotropy

Nanoscale ◽  
2021 ◽  
Author(s):  
Qian Chen ◽  
Ruqian Wang ◽  
Zhaocong Huang ◽  
Shijun Yuan ◽  
Haowei Wang ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Material Science ◽  
2D Materials ◽  
Uniaxial Anisotropy ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Semiconductor ◽  
Two Dimensional ◽  
High Critical Temperature

The magnetic semiconductor with high critical temperature has long been the focus in material science and recently is also known as one of the fundamental questions in two-dimensional (2D) materials....

Modulating 2D Heterointerface with g-C3N4 Meshes: A Suitable Hetero-Layered Architecture for High-Power and Long-Life Energy Storage

2021 ◽  
Author(s):  
Yunping Wu ◽  
Wei Wei ◽  
Tianyi Ding ◽  
Sheng Chen ◽  
Rui Zhai ◽  
...  
Keyword(s):  
Energy Storage ◽  
High Power ◽  
2D Materials ◽  
Two Dimensional ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Efficient Energy ◽  
Layered Architecture ◽  
The Common ◽  
Long Life

Two-dimensional (2D) heterostructures combine the advantageous features of different 2D materials and represent advanced electrode architectures for development of efficient energy storage devices. However, the common 2D heterostructures made by...

Mechanics of free-standing inorganic and molecular 2D materials

Nanoscale ◽  
2021 ◽  
Author(s):  
Xianghui Zhang ◽  
Andre Beyer
Keyword(s):  
Recent Progress ◽  
Mechanical Characterization ◽  
2D Materials ◽  
Two Dimensional ◽  
Free Standing ◽  
Inorganic As

The discovery of graphene has triggered a great interest in inorganic as well as molecular two-dimensional (2D) materials. In this review, we summarize recent progress in the mechanical characterization of...

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