A Novel Pre-Amplifier for DTH in Folding and Interpolating ADC

2013 ◽  
Vol 321-324 ◽  
pp. 367-371
Author(s):  
Jing Lei Han ◽  
Wen Lian Zhang ◽  
Zhi Biao Shao

A pre-amplifier for distributed track and hold (DTH) circuit in high speed and high resolution folding and interpolating analog-to-digital converter (ADC) is proposed. This scheme resolves several limitations of conventional differential difference pre-amplifier (DDPA) in low voltage supply, compared to the conventional DDPA, the proposed scheme increases the input range so that all DDPAs of DTH can operate effectively, improves the averaging effect of average network, saves the random offset voltage from device mismatch, decreases the gain error of DTH, reduces the output common-mode (CM) deviation of DTH, and enhances the CM rejection of DTH. Based on SMIC 0.18μm CMOS technology and 1.8V power supply, over the input range, results from spectre shows dummy DDPAs of DTH operate effectively, the offset of output CM voltage of DTH decrease to less than 2mV, gain error decrease to less than 1%, the gain of middle novel pre-amplifier and boundary novel pre-amplifier are both 2.5, bandwidths are all above 1.9GHZ, while power dissipation of each DDPA is 3.22mW. The high CM rejection and low gain error decrease the quantification error effectively, and enhance the performance of ADC. The design meets the requirement of ADC applied to software defined radio (SDR).

Strong arm comparator has some characteristics like it devours zero static power and yields rail to rail swing. It acquires a positive feedback allowed by two cross coupled pairs of comparators and results a low offset voltage in input differential stage. We modified a strong arm Comparator for high speed without relying on complex calibration Schemes. a 5- bit 600MS/s asynchronous digital slope analog to digital converter (ADS-ADC) with modified strong arm comparator designed in cadence virtuoso at 180nm CMOS technology. The design of SR-Latch using Pseudo NMOS NOR Gate optimizes the speed. Thus delay reduced in select signal generation block. Power dissipation is minimized with lesser transistor count in Strong arm comparator and SR-Latch with maximum sampling speed. The speed of the converter can be improved by resolution. The proposed circuit is 5-bit ADC containing a delay cell, Sample and hold, continuous time comparator, strong arm comparator, Pseudo NMOS SR-Latch and Multiplexer. This 5- bit ADC operates voltage at 1.8 volts and consumes an average power.


2021 ◽  
Author(s):  
Shahab Ardalan

A 1.2 V, 8 bit, 100 MSample/Sec Pipeline Analog-to-Digital Converter is designed in 0.18-μm standard CMOS technology. An emphasis was placed on observing the low voltage and low power design. The architecture of this ADC is 1 bit/stage pipelined configuration. With above specifications the designed ADC can be applicable for DVI flat-panel display; Giga bit Ethernet on copper, RGB to LCD converter and cable modem. This designed ADC can achieve SNDR 56dB in 100 MHz sampling frequency with 8 bit resolution. Total power dissipation is 40.6mW and INL is around 1 LSB and the maximum swing of the input is 1 Volt peak to peak which is almost rail-to-rail situation. The core area of the ADC excluding pads is around 0.25mm 2 .


2021 ◽  
Author(s):  
Shahab Ardalan

A 1.2 V, 8 bit, 100 MSample/Sec Pipeline Analog-to-Digital Converter is designed in 0.18-μm standard CMOS technology. An emphasis was placed on observing the low voltage and low power design. The architecture of this ADC is 1 bit/stage pipelined configuration. With above specifications the designed ADC can be applicable for DVI flat-panel display; Giga bit Ethernet on copper, RGB to LCD converter and cable modem. This designed ADC can achieve SNDR 56dB in 100 MHz sampling frequency with 8 bit resolution. Total power dissipation is 40.6mW and INL is around 1 LSB and the maximum swing of the input is 1 Volt peak to peak which is almost rail-to-rail situation. The core area of the ADC excluding pads is around 0.25mm 2 .


2013 ◽  
Vol 22 (04) ◽  
pp. 1350018 ◽  
Author(s):  
ZHANGMING ZHU ◽  
HONGBING WU ◽  
GUANGWEN YU ◽  
YANHONG LI ◽  
LIANXI LIU ◽  
...  

A low offset and high speed preamplifier latch comparator is proposed for high-speed pipeline analog-to-digital converters (ADCs). In order to realize low offset, both offset cancellation techniques and kickback noise reduction techniques are adopted. Based on TSMC 0.18 μm 3.3 V CMOS process, Monte Carlo simulation shows that the comparator has a low offset voltage 1.1806 mV at 1 sigma at 125 MHz, with a power dissipation of 413.48 μW.


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Labonnah Farzana Rahman ◽  
Mamun Bin Ibne Reaz ◽  
Chia Chieu Yin ◽  
Mohammad Marufuzzaman ◽  
Mohammad Anisur Rahman

Circuit intricacy, speed, low-offset voltage, and resolution are essential factors for high-speed applications like analog-to-digital converters (ADCs). The comparator circuit with preamplifier increases the power dissipation, as it requires higher amount of currents than the latch circuitry. In this research, a novel topology of dynamic latch comparator is illustrated, which is able to provide high speed, low offset, and high resolution. Moreover, the circuit is able to reduce the power dissipation as the topology is based on latch circuitry. The cross-coupled circuit mechanism with the regenerative latch is employed for enhancing the dynamic latch comparator performance. In addition, input-tracking phase is used to reduce the offset voltage. The Monte-Carlo simulation results for the designed comparator in 0.18 μm CMOS process show that the equivalent input-referred offset voltage is 720 μV with 3.44 mV standard deviation. The simulated result shows that the designed comparator has 8-bit resolution and dissipates 158.5 μW of power under 1.8 V supply while operating with a clock frequency of 50 MHz. In addition, the proposed dynamic latch comparator has a layout size of148.80 μm×59.70 μm.


2014 ◽  
Vol 513-517 ◽  
pp. 4572-4575
Author(s):  
Zhong Ying Zhu ◽  
Hui Hong ◽  
Shi Liang Li

A high speed, low offset fully differential comparator for high-speed analog-to-digital converter which can work at a sampling rate of 8GS/s is presented in this paper. The three-stage pre-amplifiers in the improved comparator structure is proposed to ameliorate its gain. The positive feedback regeneration circuit and the improved output buffer are used to ameliorate the comparator bandwidth. Operating with an input sine signal of 1GHz frequency, the circuit can oversample up to 8GS/s with 5bits of resolution. The simulated offset voltage of the comparator by Monte Carlo at 8GHz clock is 5.09mV.


Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 551
Author(s):  
Zhongjian Bian ◽  
Xiaofeng Hong ◽  
Yanan Guo ◽  
Lirida Naviner ◽  
Wei Ge ◽  
...  

Spintronic based embedded magnetic random access memory (eMRAM) is becoming a foundry validated solution for the next-generation nonvolatile memory applications. The hybrid complementary metal-oxide-semiconductor (CMOS)/magnetic tunnel junction (MTJ) integration has been selected as a proper candidate for energy harvesting, area-constraint and energy-efficiency Internet of Things (IoT) systems-on-chips. Multi-VDD (low supply voltage) techniques were adopted to minimize energy dissipation in MRAM, at the cost of reduced writing/sensing speed and margin. Meanwhile, yield can be severely affected due to variations in process parameters. In this work, we conduct a thorough analysis of MRAM sensing margin and yield. We propose a current-mode sensing amplifier (CSA) named 1D high-sensing 1D margin, high 1D speed and 1D stability (HMSS-SA) with reconfigured reference path and pre-charge transistor. Process-voltage-temperature (PVT) aware analysis is performed based on an MTJ compact model and an industrial 28 nm CMOS technology, explicitly considering low-voltage (0.7 V), low tunneling magnetoresistance (TMR) (50%) and high temperature (85 °C) scenario as the worst sensing case. A case study takes a brief look at sensing circuits, which is applied to in-memory bit-wise computing. Simulation results indicate that the proposed high-sensing margin, high speed and stability sensing-sensing amplifier (HMSS-SA) achieves remarkable performance up to 2.5 GHz sensing frequency. At 0.65 V supply voltage, it can achieve 1 GHz operation frequency with only 0.3% failure rate.


2019 ◽  
Vol 29 (06) ◽  
pp. 2050084
Author(s):  
Daiguo Xu ◽  
Hequan Jiang ◽  
Dongbin Fu ◽  
Xiaoquan Yu ◽  
Shiliu Xu ◽  
...  

This paper presents a linearity improved 10-bit 120-MS/s successive approximation register (SAR) analog-to-digital converter (ADC) with high-speed and low-noise dynamic comparator. A gate cross-coupled technique is introduced in boost sampling switch, the clock feedthrough effect is compensated without extra auxiliary switch and the linearity of sampling switch is enhanced. Further, substrate voltage boost technique is proposed, the absolute values of threshold voltage and equivalent impedances of MOSFETs are both depressed. Consequently, the delay of comparator is also reduced. Moreover, the reduction of threshold voltages for input MOSFETs could bring higher transconductance and lower equivalent input noise. To demonstrate the proposed techniques, a design of SAR ADC is fabricated in 65-nm CMOS technology, consuming 1.5[Formula: see text]mW from 1[Formula: see text]V power supply with a SNDR [Formula: see text][Formula: see text]dB and SFDR [Formula: see text][Formula: see text]dB. The proposed ADC core occupies an active area of 0.021[Formula: see text]mm2, and the corresponding FoM is 24.4 fJ/conversion-step with Nyquist frequency.


Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2033
Author(s):  
Ahmed Elgreatly ◽  
Ahmed Dessouki ◽  
Hassan Mostafa ◽  
Rania Abdalla ◽  
El-sayed El-Rabaie

Time-based analog-to-digital converter is considered a crucial part in the design of software-defined radio receivers for its higher performance than other analog-to-digital converters in terms of operation speed, input dynamic range and power consumption. In this paper, two novel voltage-to-time converters are proposed at which the input voltage signal is connected to the body terminal of the starving transistor rather than its gate terminal. These novel converters exhibit better linearity, which is analytically proven in this paper. The maximum linearity error is reduced to 0.4%. In addition, the input dynamic range of these converters is increased to 800 mV for a supply voltage of 1.2 V by using industrial hardware-calibrated TSMC 65 nm CMOS technology. These novel designs consist of only a single inverter stage, which results in reducing the layout area and the power consumption. The overall power consumption is 18 μW for the first proposed circuit and 15 μW for the second proposed circuit. The novel converter circuits have a resolution of 5 bits and operate at a maximum clock frequency of 500 MHz.


2014 ◽  
Vol 1049-1050 ◽  
pp. 687-690
Author(s):  
Yu Han Gao ◽  
Ru Zhang Li ◽  
Dong Bing Fu ◽  
Yong Lu Wang ◽  
Zheng Ping Zhang

High speed encoder is the key element of high speed analog-to-digital converter (ADC). Therefor the type of encoder, the type of code, bubble error suppression and bit synchronization must be taken into careful consideration especially for folding and interpolating ADC. To reduce the bubble error which may resulted from the circuit niose, comparator metastability and other interference, the output of quantizer is first encoded with gray code and then converted to binary code. This high speed encoder is verified in the whole time-interleaved ADC with 0.18 Bi-CMOS technology, the whole ADC can achieve a SNR of 45 dB at the sampling rate of 5GHz and input frequency of 495MHz, meanwhile a bit error rate (BER) of less than 10-16 is ensured by this design.


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