Optical Properties of a-C:H Films Deposited by Plasma Microwave Discharge with Controlling Substrate Temperature

2011 ◽  
Vol 227 ◽  
pp. 200-203
Author(s):  
M. Kihel ◽  
Salah Sahli ◽  
R. Clergereaux ◽  
P. Raynaud ◽  
Y. Segui
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Optical Band Gap ◽  
Microwave Discharge ◽  
Plasma Reactor ◽  
Deposition Process ◽  
The Other ◽  
Amorphous Hydrogenated Carbon ◽  
Deposited Films ◽  
Plasma Microwave

Amorphous hydrogenated carbon (a-C:H) films have been deposited in Microwave Multipolar plasma reactor (MMP) using pure acetylene as precursor with controlling substrate temperature. Investigations on the optical properties of deposited films according to the substrate temperature have been reported. It has been observed that the optical band gap decreases and the Csp2 concentration increases when cooling down the substrate temperature. On the other hand, it has been revealed elsewhere that cooling down the substrate temperature during the deposition process, leads to the increase of particles trapped density in the deposited films due to a phenomenon of thermophoresis. Therefore, the optical properties evolution is linked to the increases of particles trapped density in the deposited films.

Influence of Substrate Temperature on Structural and Optical Properties of Co-Evaporated Cu2SnS3/ITO Thin Films

2022 ◽  
Vol 1048 ◽  
pp. 189-197
Author(s):  
Tippasani Srinivasa Reddy ◽  
M.C. Santhosh Kumar
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Nir Spectroscopy ◽  
Stoichiometric Ratio ◽  
Tin Sulfide ◽  
Structural And Optical Properties ◽  
Average Grain Size ◽  
Deposited Films

In this study report the structural and optical properties of Copper Tin Sulfide (Cu2SnS3) thin films on indium tin oxide (ITO) substrate using co-evaporation technique. High purity of copper, tin and sulfur were taken as source materials to deposit Cu2SnS3 (CTS) thin films at different substrate temperatures (200-350 °C). Further, the effect of different substrate temperature on the crystallographic, morphological and optical properties of CTS thin films was investigated. The deposited CTS thin films shows tetragonal phase with preferential orientation along (112) plane confirmed by X-ray diffraction. Micro-Raman studies reveled the formation of CTS thin films. The surface morphology, average grain size and rms values of the deposited films are examined by Scanning electron spectroscopy (SEM) and Atomic Force Microscopy (AFM). The Energy dispersive spectroscopy (EDS) shows the presence of copper, tin and sulfur with a nearly stoichiometric ratio. The optical band gap (1.76-1.63 eV) and absorption coefficient (~105 cm-1) of the films was calculated by using UV-Vis-NIR spectroscopy. The values of refractive index, extinction coefficient and permittivity of the deposited films were calculated from the optical transmittance data.

Effect of Argon Gas Pressure on Optical Properties of Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering Technique

2014 ◽  
Vol 904 ◽  
pp. 205-208
Author(s):  
J.H. Gu ◽  
Z.Y. Zhong ◽  
S.B. Chen ◽  
C.Y. Yang ◽  
J. Hou
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Optical Band Gap ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Argon Gas ◽  
Deposited Films

Zinc oxide (ZnO) thin films were deposited by radio frequency (RF) magnetron sputtering technique on glass substrates in pure argon gas. The optical transmission stectra of the films were measured by ultraviolet-visible spectrophotometer. The effects of argon gas pressure on optical properties of the deposited films were investigated. The optical band-gap of the films was evaluated in terms of the Taucs law. The results show that the argon gas pressure has slightly affected the optical band-gap of the deposited films. Furthermore, the refractive index and extinction coefficient of the films were determined by means of the optical characterization methods. Meanwhile, the dispersion behavior of the refractive index was studied by the single-oscillator model of Wemple and DiDomenico, and the physical parameters of the average oscillator strength, average oscillator wavelength, oscillator energy, the refractive index dispersion parameter and the dispersion energy were obtained.

Effect of Sputtering Power on Morphological, Structural and Optical Properties of Al-Doped Zinc Oxide Film

2015 ◽  
Vol 659 ◽  
pp. 593-598
Author(s):  
Patthamapun Boonprakom ◽  
Watcharee Rattanasakulthong
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Rf Sputtering ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Deposition Process ◽  
Zinc Oxide Film ◽  
Sputtering Power ◽  
Visible Wavelength Range ◽  
Deposited Films

Transparent conductive Al-doped zinc oxide (ZnO:Al) films with different sputtering power were prepared on glass substrate using an RF sputtering technique. Two main peaks of the hexagonal wurtzite structure in the (002) and (004) direction were observed in every deposited ZnO:Al film. Intensities of these peaks were increased with the increasing sputtering power. Moreover, the surface roughness tended to increase with increasing sputtering power whereas the electrical resistance decreased with increasing sputtering power. The ZnO:Al film deposited at 150 and 200 W showed maximum optical transmittance of over 80% in the visible wavelength range. All results confirmed that the sputtering power directly affected film thickness because the higher sputtering power gave rise to a higher deposition rate; the surface morphology of the deposited films was dependent on the sputtering power and the optical properties were indirectly affected by the power of the deposition process.

Effect of Two-Step Deposition Process on Morphology and Optical Properties of Nanostructured Diamond Films

2013 ◽  
Vol 651 ◽  
pp. 148-153 ◽  
Author(s):  
S. Tipawan Khlayboonme ◽  
Wicharn Techitdheera ◽  
Warawoot Thowladda
Keyword(s):  
Optical Properties ◽  
Carbon Content ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Single Step ◽  
Second Step ◽  
Step Process

The morphology and optical properties of nanostructured diamond films affected by the two-step deposition process with changing CH4 concentration were investigated. The CH4 concentration was 1% for the first step and 2% for the second step. The films were prepared by chemical vapor deposition in a microwave plasma reactor with a CH4/H2 gas mixture. Nanocrystalline columnar-structured diamond film with lowering of sp2-bonded carbon content was achieved by the two-step deposition process. Unlike that of the single-step process with 1%CH4, the two-step process promoted the morphology to more uniform and smoother film. The two-step process increased the higher grain boundary as well as decreased the sp2-bonded carbon content in the film, as compared with the single-step process with 2%CH4Subscript text.

scholarly journals Effect of Heat Treatment on the Optical Properties of Cobalt Doped Stannic Oxide

2014 ◽  
Vol 28 ◽  
pp. 59-70
Author(s):  
Saba Jameel Hasan
Keyword(s):  
Heat Treatment ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Glass Substrate ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Stannic Oxide ◽  
Gap Energy

This study investigates the effect of annealing on The optical properties of (SnO2:Co) films prepared by spray pyrolysis (SP) technique at a glass substrate temperature (Ts = 773 K). The absorbance and transmittance spectra have been recorded in order to calculate the optical constant and the optical band gap energy of the films. It was found that the annealing affects all the parameters under investigations

scholarly journals Effect of Postdeposition Annealing on the Structural, Electrical, and Optical Properties of DC Magnetron SputteredTa2O5Films

2007 ◽  
Vol 2007 ◽  
pp. 1-5 ◽  
Author(s):  
S. V. Jagadeesh Chandra ◽  
P. Sreedhara Reddy ◽  
G. Mohan Rao ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Electrical Characteristics ◽  
Electrical And Optical Properties ◽  
Tantalum Target ◽  
Deposited Films

Thin films of tantalum oxide were formed on quartz and silicon (111) substrates kept at room temperature (303 K) by reactive sputtering of tantalum target in the presence of mixture of oxygen and argon gases. The as-deposited films were annealed in air for an hour in the temperature range 673–873 K. The films were characterized by studying structural, dielectric, electrical, and optical properties. The as-deposited films were amorphous in nature. As the annealing temperature increased to 673 K, the films were transformed into polycrystalline. Electrical characteristics of as-deposited and annealedTa2O5thin films were compared. The thermal annealing reduced the leakage current density and increased the dielectric constant. The optical transmittance of the films increased with the increase of annealing temperature. The as-deposited films showed the optical band gap of 4.38 eV. It increased to 4.44 eV with the increase of annealing temperature to 873 K. The as-deposited films showed the low value (1.89) of refractive index and it increased to 2.15 when annealed at 873 K. The increase of refractive index with annealing temperature was due to the increase in the packing density and crystallinity of the films.

Effects of Different Thermal Treatment on Optical Properties and Microstructure of ZnO Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1766-1770 ◽  
Author(s):  
Dong Ping Zhang ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Li Li Ru ◽  
Jian Jun Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Constant Temperature ◽  
Room Temperature ◽  
Optical Band Gap ◽  
The Other ◽  
Zno Thin Films ◽  
Zno Films ◽  
Dc Reactive Magnetron Sputtering

ZnO thin films were prepared by DC reactive magnetron sputtering at room temperature. Two of them were annealed with different modes under vacuum condition. One was annealed with constant temperature of 300°C ; the other was annealed with temperature rising step by step from room temperature to 300°C . By comparing the microstructure and optical properties of the as-grown and annealed samples, the effects of different annealing modes on ZnO films performances were revealed. The experiment results investigated that the sample annealed with constant temperature of 300°C has the high grain size and surface roughness. Both of the two annealing modes could release the intrinsic stresses to some degree. The optical band gap of the samples narrowed after annealing, and the two annealed samples have almost the same band gap. Strong green emissions are observed for all the samples, but the emission intensity decreased of the sample annealed with the temperature rising step by step compared with that of other samples.

Substrate Temperature Effects on the Structural and Optical Properties of TiO2-Doped ZnO Films for Organic Photovoltaic Devices

2013 ◽  
Vol 275-277 ◽  
pp. 1964-1967 ◽  
Author(s):  
T. Zhang ◽  
Z.Y. Zhong ◽  
J. Zhou ◽  
F.L. Sun
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Crystallite Size ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Optical Bandgap ◽  
Zno Films ◽  
Glass Substrates ◽  
Doped Zno ◽  
Deposited Films

TiO2-doped ZnO thin films with highly (002)-preferred orientation were grown on glass substrates by RF magnetron sputtering. The effect of substrate temperature on structure and optical properties of the films were investigated by X-ray diffractometer and spectrophotometer. The results show that the polycrystalline TiO2-doped ZnO films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate. The substrate temperature significantly affects the crystallite size and optical transmittance of the deposited films, but slightly influences the refractive index and optical bandgap of the deposited films. The TiO2-doped ZnO film grown at substrate temperature of 470 K possesses the maximum crystallite size, an average transmittance of 76.2 % in the visible light range, and an optical bandgap of 3.46 eV.

scholarly journals Influence of Substrate Temperature on Electrical and Optical Properties of Hydrogenated Boron Carbide Thin Films Deposited by RF Sputtering

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 196
Author(s):  
Shraddha Dhanraj Nehate ◽  
Ashwin Kumar Saikumar ◽  
Kalpathy B. Sundaram
Keyword(s):  
Optical Properties ◽  
Substrate Temperature ◽  
Boron Carbide ◽  
Photoelectron Spectroscopy ◽  
Rf Sputtering ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Radio Frequency Sputtering ◽  
Metal Insulator Metal ◽  
Deposited Films

Amorphous hydrogenated boron carbide films were deposited on silicon and glass substrates using radio frequency sputtering. The substrate temperature was varied from room temperature to 300 °C. The substrate temperature during deposition was found to have significant effects on the electrical and optical properties of the deposited films. X-ray photoelectron spectroscopy (XPS) revealed an increase in sp2-bonded carbon in the films with increasing substrate temperature. Reflection electron energy loss spectroscopy (REELS) was performed in order to detect the presence of hydrogen in the films. Metal-insulator-metal (MIM) structure was developed using Al and hydrogenated boron carbide to measure dielectric value and resistivity. Deposited films exhibited lower dielectric values than pure boron carbide films. With higher substrate deposition temperature, a decreasing trend in dielectric value and resistivity of the films was observed. For different substrate temperatures, the dielectric value of films ranged from 6.5–3.5, and optical bandgap values were between 2.25–2.6 eV.

Observations on the growth of barium bismuth oxide thin films

1992 ◽  
Vol 50 (1) ◽  
pp. 76-77
Author(s):  
M G. Norton ◽  
E.S. Hellman ◽  
E.H. Hartford ◽  
C.B. Carter
Keyword(s):  
Substrate Temperature ◽  
Deposition Process ◽  
Nucleation Layer ◽  
Second Stage ◽  
Device Applications ◽  
High Transition ◽  
Substrate Temperatures ◽  
Oriented Material ◽  
Barium Bismuth ◽  
Superconductor Device

The bismuthates (for example, Ba1-xKxBiO3) represent a class of high transition temperature superconductors. The lack of anisotropy and the long coherence length of the bismuthates makes them technologically interesting for superconductor device applications. To obtain (100) oriented Ba1-xKxBiO3 films on (100) oriented MgO, a two-stage deposition process is utilized. In the first stage the films are nucleated at higher substrate temperatures, without the potassium. This process appears to facilitate the formation of the perovskite (100) orientation on (100) MgO. This nucleation layer is typically between 10 and 50 nm thick. In the second stage, the substrate temperature is reduced and the Ba1-xKxBiO3 is grown. Continued growth of (100) oriented material is possible at the lower substrate temperature.

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