Dielectric-Tuned Diamondlike Carbon Materials for an Ultrahigh-Speed Self-Aligned Graphene Channel Field Effect Transistor

2012 ◽  
Vol 77 ◽  
pp. 270-275
Author(s):  
Susumu Takabayashi ◽  
Meng Yang ◽  
Shuichi Ogawa ◽  
Yuji Takakuwa ◽  
Tetsuya Suemitsu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Hole Doping ◽  
Plasma Damage ◽  
Dlc Film ◽  
Positive Shift ◽  
Diamondlike Carbon ◽  
Effect Transistor

The ‘DLC-GFET’, a graphene-channel field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film, is presented. The DLC film was formed ‘directly’ onto the graphene channel without forming passivation interlayers using our photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by significant photoemission from the sample with quite low electric power, minimizing plasma damage to the channel. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick DLC gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to improve the high-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from an oxygen species like H2O in the DLC film into the graphene channel, suggesting that a modulation-doped DLC structure with a δ-doped oxygen (nitrogen) species for the p (n) mode will overcome high access resistance.

Dielectric-tuned Diamondlike Carbon Materials for High-performance Self-aligned Graphene-channel Field Effect Transistors

2012 ◽  
Vol 1451 ◽  
pp. 185-190
Author(s):  
Susumu Takabayashi ◽  
Meng Yang ◽  
Shuichi Ogawa ◽  
Yuji Takakuwa ◽  
Tetsuya Suemitsu ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Hole Doping ◽  
Plasma Damage ◽  
Dlc Film ◽  
Positive Shift ◽  
Diamondlike Carbon

ABSTRACTThe ‘DLC-GFET’, a graphene field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film, is presented. The DLC film was formed ‘directly’ onto the graphene channel without forming passivation interlayers using our original photoemission-assisted plasma-enhanced chemical vapor deposition (PA-CVD), where the plasma was precisely controlled by photoemission from the sample with quite low electric power to minimize plasma damage to the channel. The DLC-GFET exhibits clear ambipolar characteristics with a slightly positive shift of the neutral points (Dirac voltages). Relatively high transconductances were obtained as 14.6 (8.8) mS/mm in the n (p) channel modes, respectively, with a thick gate dielectric of 48 nm and a long gate length of 5 μm, promising vertical scaling-down to improve the high-frequency performance. The positive shift of the Dirac voltage is due to unintentional hole doping from oxygen species in the DLC film into the graphene channel, promising a minute modulation doped structure with oxygen to overcome high resistance in the access region. Hence, a DLC film deposited by PA-CVD is a candidate for the gate dielectric on graphene.

Optimal design for a high performance H-JLTFET using HfO2 as a gate dielectric for ultra low power applications

RSC Advances ◽  
2014 ◽  
Vol 4 (43) ◽  
pp. 22803-22807 ◽  
Author(s):  
Pranav Kumar Asthana ◽  
Bahniman Ghosh ◽  
Shiromani Bal Mukund Rahi ◽  
Yogesh Goswami
Keyword(s):  
Optimal Design ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Ultra Low Power ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper we have proposed an optimal design for a hetero-junctionless tunnel field effect transistor using HfO2 as a gate dielectric.

A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer

Nano Research ◽  
2015 ◽  
Vol 8 (10) ◽  
pp. 3421-3429 ◽  
Author(s):  
Nguyen Minh Triet ◽  
Tran Quang Trung ◽  
Nguyen Thi Dieu Hien ◽  
Saqib Siddiqui ◽  
Do-Il Kim ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Effect Transistor

scholarly journals Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1753 ◽  
Author(s):  
Nikita Nekrasov ◽  
Dmitry Kireev ◽  
Nejra Omerović ◽  
Aleksei Emelianov ◽  
Ivan Bobrinetskiy
Keyword(s):  
Inkjet Printing ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Organic Molecules ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Effect Transistor ◽  
Organic Semiconducting Molecules

In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device’s cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules’ ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene’s surface and transfers charges via π–π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.

Sign in / Sign up

Export Citation Format

Share Document