CSVT as a Technique to Obtain Nanostructured Materials: WO3-x

2010 ◽  
Vol 9 ◽  
pp. 31-37 ◽  
Author(s):  
O. Goiz ◽  
F. Chávez ◽  
C. Felipe ◽  
R. Peña-Sierra ◽  
N. Morales
Keyword(s):  
Tungsten Oxide ◽  
Atmospheric Pressure ◽  
Vapor Transport ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Free Standing ◽  
Oxide Nanowires ◽  
X Ray ◽  
Tungsten Foil ◽  
Tungsten Oxide Film

The growth of tungsten oxide nanowires on silicon substrates without using any catalyst is demonstrated by means of close-spaced vapor transport (CSVT) technique at atmospheric pressure. The source was formerly prepared from a tungsten foil to produce a tungsten oxide film. CSVT array is completed with silicon substrates located at a distance of ~350 m over the tungsten oxide source at moderate temperatures (~750°C). Two distinct kinds of nanostructures were produced; a uniform distribution of free standing tungsten oxide wires of several micrometers in length with diameters less than 150 nm; and wires assembled to form nanowire bundle. The X-ray diffraction characterizations show that the phases of WO2.7 and WO2.9 are present.

Structural investigation of tungsten oxide nanowires by X-ray diffraction and transmission electron microscopy

2010 ◽  
Vol 25 (S1) ◽  
pp. S22-S24 ◽  
Author(s):  
Shibin Sun ◽  
Suyuan Sun ◽  
Zhenjiang Li
Keyword(s):  
Tungsten Oxide ◽  
Structural Investigation ◽  
Morphological Evolution ◽  
Crystal Defects ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Oxide Nanowires ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron

X-ray diffraction, selected area electron diffraction, and high-resolution transmission electron microscope techniques were used to investigate the crystalline structures of one-dimensional tungsten oxide nanowires prepared by the hydrothermal method. The as-synthesized products were found to exhibit increasing crystallinity with increasing reaction time, and tungsten oxide nanowires have crystalline defects, including stacking faults, dislocations, and vacancies. The results on the crystal defects help us to obtain a better understanding of the temperature-dependent morphological evolution of the ultrathin nanowires synthesized under different thermal processes.

scholarly journals Ga2O3 nanowires preparation at atmospheric pressure

2017 ◽  
Vol 35 (2) ◽  
pp. 412-420 ◽  
Author(s):  
R. Korbutowicz ◽  
A. Stafiniak ◽  
J. Serafińczuk
Keyword(s):  
Thermal Processing ◽  
Atmospheric Pressure ◽  
Gallium Oxide ◽  
Silicon Oxide ◽  
Silicon Substrates ◽  
Thermal Synthesis ◽  
Oxide Nanowires ◽  
X Ray ◽  
Substrate Surfaces ◽  
Ray Methods

AbstractAn attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates of (1 0 0) and (1 1 1) orientation with and without silicon oxide layers (0.5 μm) were used as support. Evaporated thin gold films were deposited on the top of those silicon carriers as a catalytic agent. After thermal treatment by Rapid Thermal Processing RTP (at various temperatures and times), which was applied to make small Au islands with the diameters of about several tens of nanometers, the substrate surfaces were observed by SEM. The Ga2O3 syntheses were made at various conditions: time, temperature and gas mixture were changed. As a result, monoclinic gallium oxide β-Ga2O3 nanostructures with dominant [1 1 1] and [0 0 2] growth directions were grown. The obtained nanostructures of several tens micrometers length were studied by SEM, PL and X-ray methods.

scholarly journals Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 937
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

scholarly journals The Synergistic Effects of Alloying on the Performance and Stability of Co3Mo and Co7Mo6 for the Electrocatalytic Hydrogen Evolution Reaction

Hydrogen ◽  
2020 ◽  
Vol 1 (1) ◽  
pp. 11-21
Author(s):  
Youyi Sun ◽  
Alexey Y. Ganin
Keyword(s):  
Hydrogen Evolution ◽  
Synergistic Effects ◽  
Alkaline Media ◽  
Price Of Stability ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Current Decay ◽  
Earth Abundant ◽  
Current Densities

Metal alloys have become a ubiquitous choice as catalysts for electrochemical hydrogen evolution in alkaline media. However, scarce and expensive Pt remains the key electrocatalyst in acidic electrolytes, making the search for earth-abundant and cheaper alternatives important. Herein, we present a facile and efficient synthetic route towards polycrystalline Co3Mo and Co7Mo6 alloys. The single-phased nature of the alloys is confirmed by X-ray diffraction and electron microscopy. When electrochemically tested, they achieve competitively low overpotentials of 115 mV (Co3Mo) and 160 mV (Co7Mo6) at 10 mA cm−2 in 0.5 M H2SO4, and 120 mV (Co3Mo) and 160 mV (Co7Mo6) at 10 mA cm−2 in 1 M KOH. Both alloys outperform Co and Mo metals, which showed significantly higher overpotentials and lower current densities when tested under identical conditions, confirming the synergistic effect of the alloying. However, the low overpotential in Co3Mo comes at the price of stability. It rapidly becomes inactive when tested under applied potential bias. On the other hand, Co7Mo6 retains the current density over time without evidence of current decay. The findings demonstrate that even in free-standing form and without nanostructuring, polycrystalline bimetallic electrocatalysts could challenge the dominance of Pt in acidic media if ways for improving their stability were found.

OMCVD of thin films from metal diketonates and triphenylbismuth

1990 ◽  
Vol 5 (6) ◽  
pp. 1169-1175 ◽  
Author(s):  
A. D. Berry ◽  
R. T. Holm ◽  
M. Fatemi ◽  
D. K. Gaskill
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium ◽  
X Ray ◽  
Scanning Electron

Films containing the metals copper, yttrium, calcium, strontium, barium, and bismuth were grown by organometallic chemical vapor deposition (OMCVD). Depositions were carried out at atmospheric pressure in an oxygen-rich environment using metal beta-diketonates and triphenylbismuth. The films were characterized by Auger electron spectroscopy, Nomarski and scanning electron microscopy, and x-ray diffraction. The results show that films containing yttrium consisted of Y2O3 with a small amount of carbidic carbon, those with copper and bismuth were mixtures of oxides with no detectable carbon, and those with calcium, strontium, and barium contained carbonates. Use of a partially fluorinated barium beta-diketonate gave films of BaF2 with small amounts of BaCO3.

Preparation of InN by Means of AP-HCVD Using In Buffer Layers

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroaki Yokoo ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Electrical Property ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Atmospheric Pressure ◽  
Indium Nitride ◽  
Buffer Layers ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Quality Surface

AbstractWe have grown indium nitride (InN) films using In buffer layer on an a-plane sapphire substrate under atmospheric pressure by halide CVD (AP-HCVD). Growth was carried out by two steps: deposition In buffer layer at 900 °C and subsequent growth of InN layer at 650 °C. In order to compare, we also grown InN films on an a-plane sapphire. The InN films are investigated on crystal quality, surface morphology and electrical property using high-resolution X-ray diffraction (HR-XRD), X-ray pole figure, scanning electron microscope (SEM), Hall measurement. The results show that the crystal quality, surface morphology and electrical property of InN films are improved by using In buffer layer.

Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates

2005 ◽  
Vol 483-485 ◽  
pp. 209-212
Author(s):  
Hideki Shimizu ◽  
Kensaku Hisada ◽  
Yosuke Aoyama
Keyword(s):  
Epitaxial Growth ◽  
Flow Rate ◽  
Hydrogen Plasma ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Ellipsometric Measurement ◽  
X Ray ◽  
Hydrogen Radicals ◽  
Sic Films ◽  
Reflection Electron Diffraction

Effects of the flow rate of C3H8 passed through hydrogen plasma on deposition rates and^microstructures of 3C-SiC films on Si (100) substrate were investigated by a reflection electron diffraction, an X-ray diffraction and an ellipsometric measurement. The deposition rate of the films increased independently of the flow rate of C3H8 with increasing the flow rate of SiH4. The films grown with increasing the flow rate of C3H8 kept single crystalline structure even at high flow rate of SiH4. Hydrogen radicals generated from C3H8 decomposition by plasma increase with increasing the flow rate of C3H8, and play important rolls to keep epitaxial growth.

OPTICAL AND STRUCTURAL PROPERTIES OF SILVER NANOPARTICLES EMBEDDED IN INDIUM OXIDE FILMS

2011 ◽  
Vol 10 (03) ◽  
pp. 433-440 ◽  
Author(s):  
A. A. DAKHEL ◽  
F. Z. HENARI
Keyword(s):  
Indium Oxide ◽  
Nonlinear Optical ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Third Order ◽  
X Ray ◽  
Reverse Saturation Absorption ◽  
Saturation Absorption ◽  
Order Susceptibility ◽  
Nanoparticles Of Silver

Nanoparticles of silver-embedded indium oxide thin films have been prepared on glass and silicon substrates. Silver concentration were 3 wt.% and 5 wt.% as measured by X-ray fluorescence. X-ray diffraction reveals that indium oxide of these samples remains amorphous even after pre-annealing at 400°C. The optical absorption of the samples manifests the surface plasmon resonance (SPR) phenomena, which varies with Ag content. The Ag nanoparticles radius was estimated with Mie classical theory by using the SPR data analysis. The nonlinear optical properties of films on glass substrate were investigated using z-scan technique. Under cw excitation the films exhibit large reverse saturation absorption and negative nonlinearities. The real and imaginary parts of third order susceptibility of the samples were measured and the imaginary part which arise from the change in absorption is found to be dominant.

Chemical Vapor Deposition of Strontium-Barium-Niobate

1991 ◽  
Vol 243 ◽  
Author(s):  
A. Greenwald ◽  
M. Horenstein ◽  
M. Ruane ◽  
W. Clouser ◽  
J. Foresi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Strontium Barium Niobate ◽  
Electrical And Optical Properties ◽  
Strontium Barium ◽  
X Ray ◽  
Boston University

AbstractSpire Corporation has deposited strontium-barium-niobate by chemical vapor deposition at atmospheric pressure using Ba(TMHD), Sr(TMHD), and Nb ethoxide. Deposition temperature as 550°C in an isothermal furnace. Films were deposited upon silicon (precoated with silica), platinum, sapphire, and quartz. Materials were characterized by RBS, X-ray diffraction, EDS, electron, and optical microscopy. Electrical and optical properties were measured at Boston University.

scholarly journals Pengaruh Suhu dan Konsentrasi terhadap Proses Pemisahan Nikel dari Logam Pengotor Menggunakan Metode Leaching

FLUIDA ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 81-92
Author(s):  
Ade Yanti Nurfaidah ◽  
Dheana Putri Lestari ◽  
Rheisya Talitha Azzahra ◽  
Dian Ratna Suminar
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Sulfuric Acid ◽  
Atmospheric Pressure ◽  
Operating Temperature ◽  
Acid Leaching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Acid Leaching ◽  
Scanning Electron

Abstrak Nikel merupakan unsur logam yang penggunaannya sudah dikenal dalam industri, terutama pada pelapisan logam dan paduan. Pengolahan nikel dari bijih nikel laterit (jenis Limonit) menggunakan proses hidrometalurgi Atmospheric Pressure Acid Leaching (APAL) yang dinilai lebih ekonomis karena pemakaian energi dan biaya operasional cukup rendah. Media pelarut yang digunakan berupa larutan asam sulfat (H2SO4). Sebelum dilakukan pengolahan, karakterisasi bijih dilakukan menggunakan X-Ray Diffraction (XRD), X-Ray Flourscence (XRF), dan Scanning Electron Microscopy (SEM). Metode penelitian yang dilakukan yaitu literature review. Hasil review dari beberapa artikel jurnal menunjukkan bahwa kadar nikel yang terkandung pada suatu bijih sekitar 1,42%, 2,94 dan 0,95% serta sisanya adalah pengotor. Kondisi operasi yang tepat akan menghasilkan pemurnian nikel yang cukup tinggi. Parameter kondisi operasi yang dapat memengaruhi proses pemisahan nikel diantaranya suhu operasi yang ditunjukan dengan semakin meningkatnya % ekstraksi nikel seiring dengan kenaikan suhu. Selain suhu operasi, konsentrasi pelarut juga salah satu parameter yang mempengaruhi % ekstraksi karena semakin tinggi ion H+ akan memudahkan proses pelarutan sehingga akan mengikat Nikel Oksida yang terdapat pada bijih. Suhu paling optimal untuk menghasilkan nikel dengan kemurnian tinggi dalam operasi pelindian atmosferik adalah 90°C dan konsentrasi asam sulfat 5 M.  Kata Kunci: Nikel, pelindian, suhu, konsentrasi   Abstract  Nickel is a metal element whose use is well known in industry, especially in metal and alloy plating. The processing of nickel from laterite nickel ore (Limonite type) uses a hydrometallurgical process of Atmospheric Pressure Acid Leaching (APAL) which is considered more economical because energy consumption and operational costs are quite low. The solvent medium used is a solution of sulfuric acid (H2SO4). Prior to processing, ore characterization was carried out using X-Ray Diffraction (XRD), X-Ray Flourscence (XRF), and Scanning Electron Microscopy (SEM). The research method literature review article. The results of reviews from several journal articles show that the nickel content contained in an ore is around 1.42%, 2.94% and 0.95% and the rest is impurity. The right operating conditions will result in relatively high nickel refining. The operating condition parameters that can affect the nickel separation process include the operating temperature which is indicated by the increasing % nickel extraction along with the increase in temperature. In addition to operating temperature, solvent concentration is also one of the parameters that affects the% extraction because the higher the H+ ion will facilitate the dissolving process so that it will bind to the Nickel Oxide contained in the ore. The optimal temperature to produce high-purity nickel in atmospheric leaching operations is 90°C and a sulfuric acid concentration of 5 M. Keywords: Nickel, leaching, temperature, concentration

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