4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology

2013 ◽  
Vol 740-742 ◽  
pp. 1048-1051 ◽  
Author(s):  
Mihaela Alexandru ◽  
Viorel Banu ◽  
Phillippe Godignon ◽  
Miguel Vellvehi ◽  
José Millan
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Unit Area ◽  
Logic Gates ◽  
Wafer Surface ◽  
Intelligent Sensors ◽  
Complex Design ◽  
Integration Density ◽  
Poly Type ◽  
Increasing Demand

The design and development of SiC integrated circuits (ICs) nowadays is a necessity due to the increasing demand for high temperature intelligent power applications and intelligent sensors. Due to the superior electrical, mechanical and chemical proprieties of 4H-SiC poly-type, 4H-SiC MESFET transistor is a good compromise for ICs on SiC able to work at higher temperatures (HT) than on Si. This paper presents new experimental results of approaching embedded logic gates with SiC MESFETs and resistors, built in junction-isolated tubs. The P+ implantation isolation technology offers important perspectives regarding the integration density of devices per unit area and wafer surface, being able to use far more complex design geometry for modeling ICs on SiC.

From Chips to Modules: Tackling the High Temperature Design Challenge

2018 ◽  
Vol 2018 (HiTEC) ◽  
pp. 000116-000119
Author(s):  
Pierre Delatte ◽  
Zlatan Gradincic
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Systems Design ◽  
Logic Gates ◽  
Magnetic Components ◽  
Complex Functions ◽  
Systems Requirements ◽  
The Right ◽  
Hybrid Assemblies ◽  
Design And Manufacture

Abstract The paper discusses the challenges of high temperature electronic design and the solutions offered to designers to build reliable systems for harsh environments. First it explains why robust silicon and packaging technologies are equally important to design and manufacture reliable high temperature integrated circuits (ICs). Applying the necessary qualification procedures is also critical. Finally, understanding high temperature specific systems requirements is also important for high temperature ICs vendors in order to offer the right features and the necessary support. As an example, offering simple functions like transistors, logic gates or amplifiers could look basic but is mandatory to build systems and often neglected by large semiconductor companies. Also, supporting modules manufacturers with a bare die offer is critical because, in some cases, hybrid assemblies are the only way to reach size, temperature and reliability requirements. Finally, for more complex functions, e.g. DC-DC Converters or High Voltage Gate Drivers, offering reference designs taking into account the specificities of high temperature passive and magnetic components is mandatory to support reliable modules or systems design.

Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs

2012 ◽  
Vol 711 ◽  
pp. 104-108 ◽  
Author(s):  
Mihaela Alexandru ◽  
Viorel Banu ◽  
Miguel Vellvehi ◽  
Philippe Godignon ◽  
José Millán
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Logic Gates ◽  
Basic Logic ◽  
High Temperature Application ◽  
High Quality ◽  
Digital Electronics ◽  
Temperature Application

– 4H-SiC MESFET transistors are very attractive devices for high temperature application and communications. The JFET and MESFET transistors have a promising potential for integrated circuits able to operate at high temperature and harsh radiation environments, due to the superior electrical, mechanical and chemical proprieties of 4H-SiC. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications.

scholarly journals Circuit Techniques in GaN Technology for High-Temperature Environments

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 42
Author(s):  
Ahmad Hassan ◽  
Jean-Paul Noël ◽  
Yvon Savaria ◽  
Mohamad Sawan
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
National Research Council ◽  
Logic Gates ◽  
Voltage Reference ◽  
Flip Flop ◽  
Wide Range ◽  
Circuit Techniques ◽  
First Time

As a wide bandgap semiconductor, Gallium Nitride (GaN) device proves itself as a suitable candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology available from the National Research Council of Canada to serve RF applications. However, this technology has the potential to boost HT electronics to higher ranges of operating temperatures and to higher levels of integration. This paper summarizes the outcome of five years of research investigating the implementation of GaN500-based circuits to support HT applications such as aerospace missions and deep earth drilling. More than 15 integrated circuits were implemented and tested. We performed the HT characterization of passive elements integrated in GaN500 including resistors, capacitors, and inductors up to 600 °C. Moreover, we developed for the first time several digital circuits based on GaN500 technology, including logic gates (NOT, NAND, NOR), ring oscillators, D Flip-Flop, Delay circuits, and voltage reference circuits. The tested circuits are fabricated on a 4 mm × 4 mm chip to validate their functionality over a wide range of temperatures. The logic gates show functionality at HT over 400 °C, while the voltage reference circuits remain stable up to 550 °C.

High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates

2014 ◽  
Vol 778-780 ◽  
pp. 1130-1134 ◽  
Author(s):  
Mihaela Alexandru ◽  
Viorel Banu ◽  
Matthieu Florentin ◽  
Xavier Jordá ◽  
Miguel Vellvehi ◽  
...  
Keyword(s):  
High Temperature ◽  
Elevated Temperatures ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Logic Gates ◽  
Basic Logic ◽  
Process Maturity ◽  
Integration Density ◽  
Device Integration

Due to our demonstrated stable Tungsten-Schottky barrier at elevated temperatures, and also thanks to our technological process maturity regarding SiC-Schottky contact fabrication, we have implemented the digital logic gates library adopting a normally-on MESFET topology. In this paper we present new experimental results showing the thermal behavior up to 300oC of 4H-SiC logic gates library, monolithically integrating normally-on MESFETs and epitaxial resistors. The implemented SiC devices are based on important CMOS features and are specially designed for large ICs device integration density.

An Alternative to High-Temperature and Acid/Solvent-Based Methods for Removing Integrated Circuits from Ceramic or Other Problem Substrates

2005 ◽  
Author(s):  
Carl M. Nail
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Success Rate ◽  
Mechanical Damage ◽  
Test Equipment ◽  
High Success Rate ◽  
Automated Test Equipment ◽  
Removal Method ◽  
Automated Test ◽  
Conventional Methods

Abstract Dice must often be removed from their packages and reassembled into more suitable packages for them to be tested in automated test equipment (ATE). Removing bare dice from their substrates using conventional methods poses risks for chemical, thermal, and/or mechanical damage. A new removal method is offered using metallography-based and parallel polishing-based techniques to remove the substrate while exposing the die to minimized risk for damage. This method has been tested and found to have a high success rate once the techniques are learned.

Applications of CoSi2 to VLSI and ULSI

1993 ◽  
Vol 320 ◽  
Author(s):  
S. P. Murarka
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Integrated Circuits ◽  
Lattice Mismatch ◽  
Electrical Contacts ◽  
High Conductivity ◽  
Low Resistivity ◽  
Polysilicon Films ◽  
Continued Use

ABSTRACTSilicides have found application as high conductivity, high temperature, and corrosion resistance materials that form good electrical contacts to silicon and good low resistivity cladding on polysilicon films used as gate metal. Of various silicides investigated in past CoSi2 offers several advantages including lowest resistivity, self-aligned formation, low lattice mismatch with silicon, stability in presence of dopants and on SiO2, Si3N4, or Sioxynitrides, and reliability to process temperatures ≤900°C even when used in thicknesses as thin as 50-60 nm. Thus, CoSi2 has found an application in VLSI and ULSI. In this paper, the properties, formation and processing, reliability, and applicability of CoSi2 will be reviewed. It will be shown that CoSi2 is only silicide that offers properties and reliability for continued use in sub-0.25 pm VLSI and ULSI integrated circuits.

scholarly journals Digital logic gates in soft, conductive mechanical metamaterials

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Charles El Helou ◽  
Philip R. Buskohl ◽  
Christopher E. Tabor ◽  
Ryan L. Harne
Keyword(s):  
Integrated Circuits ◽  
Electronic Materials ◽  
Polymer Networks ◽  
Conductive Polymer ◽  
Network Connectivity ◽  
Logic Gates ◽  
Boolean Logic ◽  
Digital Logic ◽  
Mechanical Metamaterials ◽  
Logic Operations

AbstractIntegrated circuits utilize networked logic gates to compute Boolean logic operations that are the foundation of modern computation and electronics. With the emergence of flexible electronic materials and devices, an opportunity exists to formulate digital logic from compliant, conductive materials. Here, we introduce a general method of leveraging cellular, mechanical metamaterials composed of conductive polymers to realize all digital logic gates and gate assemblies. We establish a method for applying conductive polymer networks to metamaterial constituents and correlate mechanical buckling modes with network connectivity. With this foundation, each of the conventional logic gates is realized in an equivalent mechanical metamaterial, leading to soft, conductive matter that thinks about applied mechanical stress. These findings may advance the growing fields of soft robotics and smart mechanical matter, and may be leveraged across length scales and physics.

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

Manufacturability Study for Etching High-Density BST/Pt Capacitors

2000 ◽  
Vol 655 ◽  
Author(s):  
Jay Hwang
Keyword(s):  
High Temperature ◽  
Etch Rate ◽  
Control Process ◽  
High Density ◽  
Wafer Surface ◽  
Plasma Chamber ◽  
Reactive Plasma ◽  
Pt Electrodes ◽  
Profile Control

AbstractProfile control, process repeatability and productivity concerns in etching Pt electrodes are reviewed specifically for application in fabricating high-density BST/Pt capacitors. The approach of using a high temperature cathode in a high-density reactive plasma chamber has produced a repeatable >85° Pt profile, stable etch rate and low particle results over a 500-wafer marathon test. A “corrosion-like” BST defect can be prevented by adding a post etch treatment to remove any corrosive residue from the wafer surface. A feasible manufacturing solution for etching BST/Pt capacitors for future high-density DRAM application is demonstrated.

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