Advances in Wafer Level Processing and Integration for CIS Module Manufacturing

2010 ◽  
Vol 2010 (1) ◽  
pp. 000378-000384
Author(s):  
Bioh Kim ◽  
Thorsten Matthias ◽  
Gerald Kreindl ◽  
Viorel Dragoi ◽  
Markus Wimplinger ◽  
...  
Keyword(s):  
Low Cost ◽  
Cost Effective ◽  
High Volume ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Handheld Devices ◽  
Wafer Level ◽  
Sensor Module ◽  
Integration Techniques ◽  
Backside Illuminated

This article presents the advances in wafer-level processing and integration techniques for CMOS image sensor module manufacturing. CMOS image sensors gave birth to the low-cost, high-volume camera phone market and are being adopted for various high-end applications. The backside illumination technique has significant advantages over the front-side illumination due to separation of the optical path from the metal interconnects. Wafer bonding plays a key role in manufacturing backside illuminated sensors. The cost-effective integration of miniaturized cameras in various handheld devices becomes realized through the introduction of CMOS image sensor modules or camera modules manufactured with wafer-level processing and integration techniques. We developed various technologies enabling wafer-level processing and integration, such as (a) wafer-to-wafer permanent bonding with oxide or polymer layers for manufacturing backside illuminated sensor wafers, (b) wafer-level lens molding and stacking based on UV imprint lithography for making wafer-level optics, (c) conformal coating of various photoresists within high aspect ratio through-silicon vias, and (d) advanced backside lithography for various metallization processes in wafer-level packaging. Those techniques pave the way to the future growth of the digital imaging industry by improving the electrical and optical aspects of devices as well as the module manufacturability.

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

scholarly journals Visible Wavelength Color Filters Using Dielectric Subwavelength Gratings for Backside-Illuminated CMOS Image Sensor Technologies

Nano Letters ◽  
2017 ◽  
Vol 17 (5) ◽  
pp. 3159-3164 ◽  
Author(s):  
Yu Horie ◽  
Seunghoon Han ◽  
Jeong-Yub Lee ◽  
Jaekwan Kim ◽  
Yongsung Kim ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Visible Wavelength ◽  
Subwavelength Gratings ◽  
Color Filters ◽  
Backside Illuminated

Ultra-High-Density Interconnect Enabled by Hybrid Bonding for Heterogeneous Integration: Interfacial Characteristics

2021 ◽  
Author(s):  
Mei-Chien Lu
Keyword(s):  
Performance Metrics ◽  
High Volume ◽  
Image Sensor ◽  
Structure Design ◽  
High Density ◽  
Heterogeneous Integration ◽  
Wafer Level ◽  
Bonding Area ◽  
The Impact ◽  
Interfacial Characteristics

Abstract Hybrid bonding has been explored for more than a decade and implemented recently in high volume production at wafer-to-wafer level for image sensor applications to enable high performance chip-stacking architectures with ultra-high-density chip-to-chip interconnect. The feasibility of sub-micron hybrid bond pitch leading to ultra-high-density chip-to-chip interconnect has been demonstrated due to the elimination of solder bridging issues from microbump method. Hybrid bonding has also been actively considered for logic and memory chip-stacking, chiplets, and heterogeneous integration in general but encountering additional challenges for bonding at die-to-wafer or die-to-die level. Overlay precision, throughput, wafer dicing are among the main causes. Widening the process margin against overlay error by designing innovative hybrid bonding pad structure is highly desirable. This work proposes a method to evaluate these hybrid bonding pad structure designs and to assess the potential performance metrics by analyzing interfacial characteristics at design phase. The bonding areas and ratios of copper-copper, copper-dielectric, and dielectric-dielectric are the proposed key parameters. The correlation between bonding area ratios and overlay errors can provide insights on the sensitivity to process margins. Nonetheless, the impact of copper recess or protrusion associated with bonding area ratios are also highlighted. The proposed method is demonstrated by examining and analyzing the hybrid bonding pad structure design concepts from a few cases reported in literatures as examples. Concerns are identified for elaboration in future designs and optimizations.

Through Silicon Via Technology: Cost effective Cu-TSV Interconnects by EMC3D and Technical Challenges with Cu-TSV

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000425-000445
Author(s):  
Paul Siblerud ◽  
Rozalia Beica ◽  
Bioh Kim ◽  
Erik Young
Keyword(s):  
Low Cost ◽  
Cost Effective ◽  
High Yield ◽  
Integrated Process ◽  
Wafer Level ◽  
Through Silicon Via ◽  
Wafer Level Packaging ◽  
Current State ◽  
Future Technologies ◽  
Ic Technology

The development of IC technology is driven by the need to increase performance and functionality while reducing size, power and cost. The continuous pressure to meet those requirements has created innovative, small, cost-effective 3-D packaging technologies. 3-D packaging can offer significant advantages in performance, functionality and form factor for future technologies. Breakthrough in wafer level packaging using through silicon via technology has proven to be technologically beneficial. Integration of several key and challenging process steps with a high yield and low cost is key to the general adoption of the technology. This paper will outline the breakthroughs in cost associated with an iTSV or Via-Mid structure in a integrated process flow. Key process technologies enabling 3-D chip:Via formationInsulator, barrier and seed depositionCopper filling (plating),CMPWafer thinningDie to Wafer/chip alignment, bonding and dicing This presentation will investigate these techniques that require interdisciplinary coordination and integration that previously have not been practiced. We will review the current state of 3-D interconnects and the of a cost effective Via-first TSV integrated process.

Wafer Level Assembly Technique Development for Fine Pitch Flip Chip 3D Die-to-Wafer Integration

2010 ◽  
Vol 2010 (1) ◽  
pp. 000548-000553
Author(s):  
Zhaozhi Li ◽  
Brian J. Lewis ◽  
Paul N. Houston ◽  
Daniel F. Baldwin ◽  
Eugene A. Stout ◽  
...  
Keyword(s):  
Flip Chip ◽  
Low Cost ◽  
Three Dimensional ◽  
Cost Effective ◽  
Market Demand ◽  
Wafer Level ◽  
Packaging Technology ◽  
Fine Pitch ◽  
3D Packaging ◽  
Assembly Technique

Three Dimensional (3D) Packaging has become an industry obsession as the market demand continues to grow toward higher packaging densities and smaller form factor. In the meanwhile, the 3D die-to-wafer (D2W) packaging structure is gaining popularity due to its high manufacturing throughput and low cost per package. In this paper, the development of the assembly process for a 3D die-to-wafer packaging technology, that leverages the wafer level assembly technique and flip chip process, is introduced. Research efforts were focused on the high-density flip chip wafer level assembly techniques, as well as the challenges, innovations and solutions associated with this type of 3D packaging technology. Processing challenges and innovations addressed include flip chip fluxing methods for very fine-pitch and small bump sizes; wafer level flip chip assembly program creation and yield improvements; and set up of the Pb-free reflow profile for the assembled wafer. 100% yield was achieved on the test vehicle wafer that has totally 1,876 flip chip dies assembled on it. This work has demonstrated that the flip chip 3D die-to-wafer packaging architecture can be processed with robust yield and high manufacturing throughput, and thus to be a cost effective, rapid time to market alternative to emerging 3D wafer level integration methodologies.

scholarly journals Fabrication of Multiscale-Structure Wafer-Level Microlens Array Mold

2019 ◽  
Vol 9 (3) ◽  
pp. 487 ◽  
Author(s):  
Shuping Xie ◽  
Xinjun Wan ◽  
Xiaoxiao Wei
Keyword(s):  
Low Cost ◽  
Form Factors ◽  
Cost Effective ◽  
Microlens Array ◽  
Practical Method ◽  
Reduced Form ◽  
Wafer Level ◽  
Polycrystalline Aluminum ◽  
Microlens Arrays ◽  
Multiscale Structure

The design and manufacture of cost-effective miniaturized optics at wafer level, usingadvanced semiconductor-like techniques, enables the production of reduced form-factor cameramodules for optical devices. However, suppressing the Fresnel reflection of wafer-level microlensesis a major challenge. Moth-eye nanostructures not only satisfy the antireflection requirementof microlens arrays, but also overcome the problem of coating fracture. This novel fabricationprocess, based on a precision wafer-level microlens array mold, is designed to meet the demandfor small form factors, high resolution, and cost effectiveness. In this study, three different kinds ofaluminum material, namely 6061-T6 aluminum alloy, high-purity polycrystalline aluminum, and purenanocrystalline aluminum were used to fabricate microlens array molds with uniform nanostructures.Of these three materials, the pure nanocrystalline aluminum microlens array mold exhibited auniform nanostructure and met the optical requirements. This study lays a solid foundation for theindustrial acceptation of novel and functional multiscale-structure wafer-level microlens arrays andprovides a practical method for the low-cost manufacture of large, high-quality wafer-level molds.

scholarly journals Low-Cost 2D Index and Straightness Measurement System Based on a CMOS Image Sensor

Sensors ◽  
2019 ◽  
Vol 19 (24) ◽  
pp. 5461 ◽  
Author(s):  
Alain Küng ◽  
Benjamin A. Bircher ◽  
Felix Meli
Keyword(s):  
Measurement System ◽  
Degrees Of Freedom ◽  
Low Cost ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Measurement Systems ◽  
Starting Point ◽  
Sensor Properties

Accurate traceable measurement systems often use laser interferometers for position measurements in one or more dimensions. Since interferometers provide only incremental information, they are often combined with index sensors to provide a stable reference starting point. Straightness measurements are important for machine axis correction and for systems having several degrees of freedom. In this paper, we investigate the accuracy of an optical two-dimensional (2D) index sensor, which can also be used in a straightness measurement system, based on a fiber-coupled, collimated laser beam pointing onto an image sensor. Additionally, the sensor can directly determine a 2D position over a range of a few millimeters. The device is based on a simple and low-cost complementary metal–oxide–semiconductor (CMOS) image sensor chip and provides sub-micrometer accuracy. The system is an interesting alternative to standard techniques and can even be implemented on machines for real-time corrections. This paper presents the developed sensor properties for various applications and introduces a novel error separation method for straightness measurements.

Joining Dissimilar Materials Using Friction Stir Scribe Technique

2016 ◽  
Vol 139 (3) ◽  
Author(s):  
Piyush Upadhyay ◽  
Yuri Hovanski ◽  
Saumyadeep Jana ◽  
Leonard S. Fifield
Keyword(s):  
Low Cost ◽  
Dissimilar Materials ◽  
Cost Effective ◽  
High Volume ◽  
Industrial Applications ◽  
Critical Pathway ◽  
Friction Stir ◽  
Design Engineers ◽  
Cost Effective Method ◽  
Polymer Metal

Development of a robust and cost-effective method of joining dissimilar materials could provide a critical pathway to enable widespread use of multimaterial designs and components in mainstream industrial applications. The use of multimaterial components such as steel-aluminum and aluminum-polymer would allow design engineers to optimize material utilization based on service requirements and could often lead to weight and cost reductions. However, producing an effective joint between materials with vastly different thermal, microstructural, and deformation responses is highly problematic using conventional joining and/or fastening methods. This is especially challenging in cost sensitive, high volume markets that largely rely on low cost joining solutions. Friction stir scribe (FSS) technology was developed to meet the demands of joining materials with drastically different properties and melting regimes. The process enables joining of light metals like magnesium and aluminum to high temperature materials like steel and titanium. Viable joints between polymer composites and metal can also be made using this method. This paper will present the state of the art, progress made, and challenges associated with this innovative derivative of friction stir welding (FSW) in reference to joining dissimilar metals and polymer/metal combinations.

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