scholarly journals (Au, Ag)/Al0.08In0.08Ga0.84N/ (Au, Ag) Metal-semiconductor-metal (MSM) Photodetectors

2021 ◽  
pp. 72-79
Author(s):  
Alaa Ghazai ◽  
Marwaa Mohammed
Keyword(s):  
Annealing Time ◽  
Annealing Temperature ◽  
Commercial Sample ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Ag Contact ◽  
First Time ◽  
Msm Photodetectors ◽  
Quality Surface

Metal-semiconductor-metal (MSM) photodetectors (PDs) based on gold and silver (Au, Ag)/Al0.08In0.08Ga0.84N (commercial sample)/ (Au, Ag) have been fabricated and characterized.   The effect of annealing temperature of As deposit, 400, 500, and 600 0C for 30 min on the topography and electrical properties of   Au contact on Al0.08In0.08Ga0.84N thin film have been characterized and optimized using Current-Voltage (I-V) characteristic. Schottky barrier height (SBH) and ideality factor (n) of Au/ Al0.08In0.08Ga0.84N interface were 1.223 eV and 1.773 at 50 0C annealing temperature for 30 min respectively, and it is found that contact has a high-quality surface. Also, with the same procedure, the effect of annealing time of 15, 30, 45 minutes, and 1 hour have been studied and optimized. The results revealed that the best annealing time is 30 min which has the highest SBH. Au contact compared with Ag contact used to first time as best our knowledge with the optimal condition to select the best metal for MSM photodetectors (PDs). The ideal characterization of Au, Ag/AlInGaN/Au, Ag MSMPDs on Si substrate depend on responsivities of 0.201 and 0.153 A W-1, quantum efficiencies of 71% and 57%, and NEPs of 3.55×10-4 and 1.45×10-3W-1, respectively have been also studied compared. The height SBH and QE for the samples grown on Si was at Au contact which proposed to use in such optoelectronic devices.

3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect

2020 ◽  
Vol 1004 ◽  
pp. 683-688
Author(s):  
Roberta Nipoti ◽  
Antonella Parisini ◽  
Virginia Boldrini ◽  
Salvatore Vantaggio ◽  
Mariaconcetta Canino ◽  
...  
Keyword(s):  
Annealing Time ◽  
Carrier Transport ◽  
Annealing Temperature ◽  
Hole Mobility ◽  
Hole Density ◽  
Fitting Procedure ◽  
Current Voltage ◽  
Hall Effect Measurements ◽  
Extended States ◽  
Post Implantation

This work takes into account low Al implanted concentrations of 3 x 1018 cm-3 and 1 x 1019 cm-3 to compare the results of 1600°C and 1950°C post-implantation annealing treatments, done with two different annealing times per given implanted Al concentration and post implantation annealing temperature. Current-voltage and Hall effect measurements were performed to have the drift hole density and the drift hole mobility curves in the temperature range 100 - 650 K. The fitting of these curves in the frame of a carrier transport into the extended states of the valence band were performed to estimate the Al acceptor density, the donor compensator density, and the Al acceptor ionization energy. Peculiar feature of hole density and hole mobility curves is a contemporaneous increase of both carrier density and mobility values with increasing annealing time, which is congruent with the output parameters of the fitting procedure. The latter shows an almost stable Al electrical activation and a decrease of compensation with increasing annealing time for constant annealing temperature and given implanted Al concentration.

Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

2006 ◽  
Vol 527-529 ◽  
pp. 819-822
Author(s):  
Fabio Bergamini ◽  
Shailaja P. Rao ◽  
Antonella Poggi ◽  
Fabrizio Tamarri ◽  
Stephen E. Saddow ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Low Pressure ◽  
Cold Wall ◽  
Current Voltage Characteristic ◽  
Process Yield ◽  
Annealing Temperatures ◽  
Current Voltage ◽  
Post Implantation

This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400°C and post-implantation annealing in silane ambient in a cold-wall low-pressure CVD reactor. The Al depth profile was almost box shaped with a height of 6×1019 cm-3 and a depth of 160 nm. Implant anneals were performed in the temperature range from 1600°C to 1700°C. As the annealing temperature was increased, the silane flow rate was also increased. This annealing process yields a smooth surface with a roughness of the implanted area of 1.7 - 5.3 nm with increasing annealing temperature. The resistivity of the implanted layer, measured at room temperature, decreased for increasing annealing temperatures with a minimum value of 1.4 0-cm measured for the sample annealed at 1700°C. Considering only the current-voltage characteristic of a diode that could be modeled as an abrupt p/n junction within the frame of the Shockley theory, the diode process yield and the diode leakage current decreased, respectively, from 93% to 47% and from 2×10-7 Acm-2 to 1×10-8 Acm-2 at 100 V reverse bias, for increasing post implantation annealing temperature.

Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors

2007 ◽  
Vol 995 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Li-Tao Yang ◽  
Kah-Wee Ang ◽  
Tsung-Yang Liow ◽  
Kian-Ming Tan ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Nickel Silicide ◽  
Cumulative Distribution ◽  
X Ray Diffraction ◽  
Silicon Carbon ◽  
Current Voltage ◽  
First Time ◽  
Nickel Silicon ◽  
Contact Metal

AbstractIn this paper, the material and electrical characteristics of Nickel-Silicon-Carbon (NiSi:C) films were investigated for the first time to ascertain the compatibility of NiSi:C contacts to silicon-carbon (Si:C) source/drain stressors. The incorporation of 1 atomic percent of carbon was found to increase both the Ni2Si-to-NiSi and NiSi-to-NiSi2 transformation temperatures. Our results show that the incorporation of carbon stabilizes the interfacial and surface morphology of NiSi:C films. We speculate that the incorporated carbon segregates into the NiSi:C grain boundaries and suppresses film agglomeration and NiSi-to-NiSi2 phase transformation. X-ray diffraction analysis further revealed that the formed NiSi:C films possessed a preferred orientation. Current-voltage measurements for NiSi and NiSi:C n+/p junctions exhibit similar cumulative distribution for junction leakage indicating that carbon incorporation does not have a detrimental impact on the n+/p junction integrity. Our results suggest that NiSi:C is a suitable self-aligned contact metal silicide to n-channel MOSFETs with SiC S/D stressors in a similar manner to the way in which NiSiGe is used for p-channel MOSFETs with SiGe S/D stressors.

Fabrication and characterization of novel lignocellulosic biomass tailored Fe3O4nanocomposites: influence of annealing temperature and chlorazol black E sequestration

RSC Advances ◽  
2015 ◽  
Vol 5 (130) ◽  
pp. 107466-107473 ◽  
Author(s):  
Md. Juned K. Ahmed ◽  
M. Ahmaruzzaman
Keyword(s):  
Iron Oxide ◽  
Lignocellulosic Biomass ◽  
Annealing Temperature ◽  
Fabrication And Characterization ◽  
First Time

Lignocellulosic biomass (papaya leaves) is utilized for the first time in the fabrication of novel iron oxide nanocomposites.

Electron microscopy characterization of monoclinic SiAs precipitates in heavily As+-implanted silicon

1991 ◽  
Vol 6 (8) ◽  
pp. 1701-1710 ◽  
Author(s):  
A. Armigliato ◽  
A. Parisini
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
X Ray ◽  
Transmission Electron ◽  
Small Precipitate ◽  
Diffraction Patterns ◽  
Microscopy Characterization ◽  
First Time

Silicon wafers have been implanted with As+ ions at an energy of 100 keV and a dose of 1 × 1017 cm−2 and subsequently annealed at 1050°for 15 min. This results in a peak As concentration of 7 × 1021 cm−3, which is far beyond the solid solubility value of arsenic in silicon at this annealing temperature. Rod-like precipitates, dislocations, and small precipitate-like defects have been observed by transmission electron microscopy. From the analysis of several diffraction patterns taken on a number of rod-like particles at different tilt angles, it has been unambiguously found that they have the structure of the monoclinic SiAs compound previously reported in literature. The stoichiometry of the precipitates has been confirmed by x-ray microanalysis. To our knowledge, this is the first time that this SiAs phase is detected in As+-implanted silicon.

Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

2014 ◽  
Vol 778-780 ◽  
pp. 483-486 ◽  
Author(s):  
Viktoryia Uhnevionak ◽  
Alex Burenkov ◽  
Christian Strenger ◽  
Vincent Mortet ◽  
Elena Bedel-Pereira ◽  
...  
Keyword(s):  
Hall Effect ◽  
Gate Voltage ◽  
Strong Dependence ◽  
Relaxation Times ◽  
Hall Factor ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Hall Effect Measurements ◽  
First Time

For the characterization ofn-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. The results of the calculation reveal a strong dependence of the Hall factor on the gate voltage. Depending on the gate voltage applied, the values of the Hall factor vary between 1.3 and 1.5. Sheet carrier density and drift mobility values derived from the Hall-effect measurements using our new gate-voltage-dependent Hall factor show very good agreement with simulations performed with Sentaurus Device of Synopsys.

Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector

2021 ◽  
Author(s):  
Ümit Doğan ◽  
Fahrettin Sarcan ◽  
Kamuran Kara Koç ◽  
Furkan Kuruoğlu ◽  
Ayşe Erol
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Metal Semiconductor Metal ◽  
Filtered Cathodic Vacuum Arc ◽  
Msm Photodetectors

Abstract In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an increasing in the diameter of grains from 10.5 to 18.3 nm as a function of annealing temperature results in a red shift in the cut-off wavelength of the photodetector from 3.25 eV (381 nm) to 3.23 eV (383 nm). It is demonstrated that the sensitivity and the speed (rise/fall times) of the ZnO thin film based MSM photodetectors enhances with increasing post growth annealing temperature of ZnO thin film due to the increase in the absorption coefficient and the decrease of the total area of the grain boundaries due to the larger grain sizes formation in ZnO thin films with increasing thermal annealing temperature.

Photosensitivity Study of Metal-Semiconductor-Metal Photodetector Based on Chemical Vapor Deposited Monolayer MoS2

2015 ◽  
Vol 15 (10) ◽  
pp. 8133-8138 ◽  
Author(s):  
Chinh Tam Le ◽  
Velusamy Senthilkumar ◽  
Yong Soo Kim
Keyword(s):  
Chemical Vapor ◽  
Visible Spectrum ◽  
Optoelectronic Device ◽  
Voltage Measurement ◽  
Large Area ◽  
Structural And Optical Properties ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Chemical Vapor Deposited ◽  
Msm Photodetectors

Monolayer molybdenum disulfide (MoS2) is an emerging two-dimensional material beyond graphene, which could potentially be applicable to lightweight, flexible optoelectronic device. In this study, we have demonstrated a planar metal-semiconductor-metal (MSM) photodetectors based on large area monolayer MoS2. The monolayer MoS2 was grown via chemical vapor depositionmethod, showing excellent structural and optical properties. The current–voltage measurement was characterized at various monochromatic lights in visible spectrum. The device exhibited good responsivity ∼7.7 mA/W for wavelength of ∼470 nm, which is relatively comparative to mechanical exfoliated monolayer MoS2 based photodetectors. Additionally, the photoresponse measurement showed that the rise/fall time was about 1/0.7 s.

Current Transport Mechanisms for MSM-Photodetectors on ZnO:N Thin Films

2009 ◽  
Vol 1201 ◽  
Author(s):  
Tingfang Yen ◽  
Alan Haungs ◽  
Sung Jin Kim ◽  
Alexander Cartwright ◽  
Wayne A. Anderson
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Dark Current ◽  
Rf Sputtering ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Temperature Dependent ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Msm Photodetectors

AbstractMetal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N+ ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 A/W; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J∼Vm gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes.

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal
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