The Structure of Ion-Deposited Crystalline Carbon Films

1976 ◽  
Vol 34 ◽  
pp. 646-647 ◽  
Author(s):  
D. C. Joy ◽  
E. G. Spencer ◽  
P. H. Schmidt ◽  
F. J. Sansalone
Keyword(s):  
Film Thickness ◽  
Carbon Films ◽  
Substrate Material ◽  
Ion Source ◽  
Index Of Refraction ◽  
Cubic Symmetry ◽  
Carrier Gas ◽  
Pure Carbon ◽  
Ion Backscattering ◽  
Made In

Polycrystalline carbon films deposited by an ion source were first studied by Aisenberg and Chabot. Because of the problems they encountered in characterizing these films we have examined similar films made in an apparatus of the type shown in Fig. 1. Samples were deposited on to substrates of NaCl, KC1 or silicon in thicknesses up to 2 μm. Prior to examination in the TEM, the films were dissolved from their substrate material and mounted on grids. The films were highly insulating (∼lO12 ohm cm), optically clear and totally resistant to attack by all common solvents. From ellipsometric measurements the index of refraction was found to be ∼2. Ion backscattering and Auger studies showed the samples to be pure carbon except for the presence of a few percent of the carrier gas (argon, krypton, etc.).Figure 2 shows a micrograph typical of such a film. Crystallites varying in size up to a maximum of a few microns are found randomly distributed over the sample. In general the morphology of the crystals is typical of a cubic symmetry, with a predominance of 90° edges. As the film thickness increases there is a tendency for existing crystals to act as substrates for new crystals.

Mechanical Properties of Pure Carbon and Carbonnitrogen Coatings on Thin Film Head Sliders

1996 ◽  
Vol 436 ◽  
Author(s):  
G. Wang ◽  
A. Strojny ◽  
J. M. Sivertsen ◽  
J. H. Judy ◽  
W. W. Gerberich
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Elastic Modulus ◽  
Carbon Films ◽  
Wear Protection ◽  
Pure Carbon ◽  
Wear Damage ◽  
Afm Micrographs ◽  
Better Than ◽  
Made In

AbstractThe mechanical properties of pure carbon (C) and carbon-nitrogen (C:N) coatings on thin film head sliders were investigated by continuous drag testing (CDT) and nano-indentation. Comparisons were made in terms of wear protection, elastic modulus and hardness of these two types of carbon films. The C and C:N thin films with various thickness were deposited on thin film head sliders using a facing target sputtering (FTS) system. After 23,000 revolutions of CDT tests, all the testing head sliders which were uncoated and coated with 90 Å C or C:N exhibited some degree of wear damage as indicated in AFM micrographs where that of the uncoated head was the most severe and that of the C:N coated head was the least. Head sliders coated with 1000Å C and C:N were studied under the TriboscopeTM nano-indenter, where load-displacement curves at different maximum loads were recorded. Elastic modulus and hardness were determined from those curves. The results show that elastic modulus and hardness of C:N are greater than that of C. Therefore, one may conclude that both C and C:N behave like a protective coating for the head slider where C:N is better than C, which could be well related to the larger elastic modulus and hardness of C:N.

Structural Characteristics of Diamond-Like Carbon Films Synthesized by Different Methods

2017 ◽  
Vol 743 ◽  
pp. 112-117
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maksim Khomyakov
Keyword(s):  
Amorphous Phase ◽  
Ion Beam ◽  
High Energy ◽  
Carbon Films ◽  
Ion Source ◽  
Ordered Structure ◽  
Deposition Technique ◽  
Cathodic Arc Deposition ◽  
Cathodic Arc ◽  
Arc Deposition

In the present study, the Raman spectra of diamond-like amorphous (a-C) and hydrogenated amorphous (a-C:H) carbon films on silicon obtained using the ion-beam methods and the pulse cathodic arc deposition technique were investigated with the aim of elucidating the relation between the hardness and structure of the films. The hardness of the samples used in the present study was 19 – 45 GPa. Hydrogenated carbon films were synthesized using END–Hall ion sources and a linear anode layer ion source (LIS) on single-crystal silicon substrates. The gas precursors were CH4 and C3H8, and the rate of the gas flow fed into the ion source was 4.4 to 10 sccm. The ion energies ranged from 150 to 600 eV. a-C films were deposited onto Si substrates using the pulse cathodic arc deposition technique. The films obtained by the pulse arc technique contained elements with an ordered structure. In the films synthesized using low- (150 eV) and high-energy (600 eV) ions beams, an amorphous phase was the major phase. The significant blurriness of the diffraction rings in the electron diffraction patterns due to a large film thickness (180 – 250 nm) did not allow distinctly observing the signals from the elements with an ordered structure against the background of an amorphous phase.

Atomic Oxygen Plasma Effects on Cvd Deposited Diamond-Like Carbon Films

1991 ◽  
Vol 236 ◽  
Author(s):  
Jeffrey S. Hale ◽  
R.A. Synowicki ◽  
S. Nafis ◽  
John A. Woollam
Keyword(s):  
Atomic Oxygen ◽  
Moisture Absorption ◽  
Crystalline Silicon ◽  
Carbon Films ◽  
Fused Silica ◽  
Low Earth Orbit ◽  
Index Of Refraction ◽  
Earth Orbit ◽  
Diamond Like Carbon ◽  
Space Flights

AbstractCVD deposited diamond-like carbon (DLC) films have been studied for possible use as a secondary standard for Low Earth Orbit materials degradation. Samples of various thicknesses have been exposed to a simulated Low Earth Orbit atomic oxygen (AO) environment using a plasma asher. Mass loss measurements indicate that DLC degrades at a rate of 0.7 mg/hr which is two to three times the rate of currently used Kapton samples which degrade at a rate of.3 mg/hr. Thickness measurements show that DLC thins at a rate of 77 Angstroms/min. Since DLC is not as susceptible to environmental factors such as moisture absorption, it could potentially provide more accurate measurements of AO fluence on short space flights. Adhesion of DLC films to both fused silica and crystalline silicon substrates has been studied under thermal cycling conditions. Film adhesion to fused silica can be enhanced by sputtering a thin layer of silicon dioxide onto the substrate prior to deposition. In addition to the above, the index of refraction and extinction coefficient of various thicknesses of DLC films has been characterized by Variable Angle Spectroscopic Ellipsometry.

Investigation of the properties of hydrogenated carbon films (a-C:H) deposited on germanium using a linear anode layer ion source

2017 ◽  
Vol 4 (11) ◽  
pp. 11500-11504
Author(s):  
Alexander Zolkin ◽  
Anna Semerikova ◽  
Sergey Chepkasov ◽  
Maxim Khomyakov
Keyword(s):  
Carbon Films ◽  
Ion Source ◽  
Anode Layer

Optical properties of amorphous hydrogenated carbon films: A spectroscopic ellipsometry study

1987 ◽  
Vol 2 (5) ◽  
pp. 645-647 ◽  
Author(s):  
Shuhan Lin ◽  
Shuguang Chen
Keyword(s):  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Carbon Films ◽  
Index Of Refraction ◽  
The Real ◽  
Complex Index ◽  
Tentative Explanation ◽  
Amorphous Hydrogenated Carbon ◽  
Ellipsometry Data ◽  
Complex Index Of Refraction

Optical properties of plasma-deposited amorphous hydrogenated carbon films were studied by spectroscopic ellipsometry. From the ellipsometry data, the real and imaginary parts, n and k, of the complex index of refraction of the film have been deduced for photon energies between 2.0 and 4.0 eV for as-grown as well as for thermally annealed films. Here n and k showed considerable variation with subsequent annealing, even under 400°C. A tentative explanation of the results is proposed.

Synthesis technique of diamondlike carbon films by laser ablation ion source in atmosphere

1992 ◽  
Author(s):  
Kaoru Suzuki ◽  
Tetsuya Taniyama ◽  
Junji Nakata ◽  
Takaya Masutani
Keyword(s):  
Laser Ablation ◽  
Carbon Films ◽  
Ion Source ◽  
Synthesis Technique ◽  
Diamondlike Carbon

Modified Organic low-k Dielectric Layers on Fired LTCC Substrates

2012 ◽  
Vol 2012 (CICMT) ◽  
pp. 000394-000399
Author(s):  
Achim Bittner ◽  
Ulrich Schmid
Keyword(s):  
Dielectric Constant ◽  
Film Thickness ◽  
High Surface ◽  
Relative Dielectric Constant ◽  
Compound Layer ◽  
Substrate Material ◽  
Filler Material ◽  
Filler Concentration ◽  
Rotating Speed ◽  
S Parameter

In this study, the reduction of permittivity of LTCC substrates by coating with a polyimide compound containing hollow glass microspheres as filler material is described. By incorporating the filler material, the dielectric constant of the substrate material is locally lowered to improve the high-frequency performance of antennas operated in the GHz range. Furthermore, by adding the filler material to the liquid polyimide precursor the layer thickness is heightened from maximum 10 μm to above 80 μm which is enough to fill cavities in LTCC substrates. Two compound materials with filler to polymer ratios 1:7.5 and 1:10 are mixed. Afterwards they are deposited by spin coating onto LTCC substrates. The film thickness depends on the rotating speed and the filler content. With the higher filler concentration and low rotating speed of 500 rpm 82 μm thick polymer films can be achieved. The high surface roughness can be reduced afterwards by adding additional pure polyimide layers on top to Ra= 3 μm. The dielectric constant of the entire substrate consisting of the LTCC and the resulting compound material is measured using a ring resonator in microstrip configuration. From the resonances occurring in the transmission S-parameter |S21| spectrum between 1 to 10 GHz, the relative dielectric constant can be determined. Using 820 μm thick LTCC substrates a relatively low reduction from εr = 7.8 to 6.6 is achieved. However, due to permittivity can be reduced with higher microsphere amounts, the dielectric constant of pure polyimide of εr= 3.3 can also be reduced. Furthermore due to the sufficiently high film thickness of the modified substrates, the compound layer can be used as single dielectric layer.

Hard Carbon Coatings: The Way Forward

MRS Bulletin ◽  
1997 ◽  
Vol 22 (9) ◽  
pp. 22-26 ◽  
Author(s):  
Stephan Neuville ◽  
Allan Matthews
Keyword(s):  
Film Growth ◽  
Limited Range ◽  
Carbon Films ◽  
Substrate Material ◽  
Theoretical Research ◽  
Hard Carbon ◽  
Corrosion Properties ◽  
Adhesion Properties ◽  
Market Growth ◽  
Wide Range

Since the first reports by Aisenberg and Chabot in 1971 indicating the possibility of producing hard amorphous (so-called diamondlike) carbon (DLC) films, many experimental and theoretical research results have been published outlining the properties and film growth mechanisms of these films deposited by a variety of techniques. Polycrystalline and even quasimonocrystalline diamond thin films have also been produced, thus providing a wide range of wear and corrosion properties. The difference between these materials and graphite led to a prediction of rapid market growth for hard carbon. However this has not materialized. A large number of carbonbased films have been produced with differences in hardness, elasticity, friction coefficient, optical and electronic bandgap, electrical and thermal conductivity, and thermal stability. In addition these materials can show very different practical adhesion properties, which depend also on the substrate material and composition. Cost, deposition rate and temperature, geometry, and size of the coating chamber are additional variables. As a result, many of these materials can only be used for a limited range of applications. It is now possible to better understand the suitability of various coatings and the causes of the early failures that occurred through unsuitable material choices. This improved understanding should allow improvements in the performance and reliability of hard carbon films and perhaps trigger the kind of market growth that was originally foreseen but failed to materialize.

Physical characterization of HfO2deposited on Ge substrates by MOCVD.

2004 ◽  
Vol 811 ◽  
Author(s):  
S. Van Elshocht ◽  
B. Brijs ◽  
M. Caymax ◽  
T. Conard ◽  
S. De Gendt ◽  
...  
Keyword(s):  
Physical Properties ◽  
Gate Dielectric ◽  
Substrate Material ◽  
Silicon Substrates ◽  
Enabling Technology ◽  
The Past ◽  
High K ◽  
Alternative Approach ◽  
Made In

ABSTRACTGermanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically unstable, preventing formation of the gate dielectric by simple oxidation. At present, high-k dielectrics might be considered as an enabling technology as much progress has been made in the deposition of thin high-quality layers.In this paper, we study the growth and physical properties of HfO2 deposited on Ge by MOCVD, using TDEAH and O2 as precursors, and compare the results to similar layers deposited on silicon substrates. Our results show that the physical properties of MOCVD-deposited HfO2 layers on Ge are very similar to what we have observed in the past for Si. Unfortunately, some of the negative aspects observed for Si, such as diffusion of substrate material in the high-k layer, a low density for thinner layers, or a rough top surface, are also observed for the case of Ge. However, careful surface pretreatments such as NH3 annealing the Ge substrate prior to deposition, can greatly improve the physical properties. An important observation is the very thin interfacial layer between HfO2 and Ge substrate, allowing a more aggressive scaling for Ge.

Nanosized graphene crystallite induced strong magnetism in pure carbon films

Nanoscale ◽  
2015 ◽  
Vol 7 (10) ◽  
pp. 4475-4481 ◽  
Author(s):  
Chao Wang ◽  
Xi Zhang ◽  
Dongfeng Diao
Keyword(s):  
Raman Band ◽  
Bilayer Graphene ◽  
Carbon Films ◽  
Pure Carbon

Pure carbon films with abundant graphene nanocrystallites (sample C) having a 2D Raman band similar to that of bilayer graphene exhibit stronger magnetism than the amorphous (A) and graphite-like structures (D).

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